KR20200025982A - Film forming apparatus, film forming method and manufacturing method of electronic device - Google Patents

Abstract

When a sputtering region, where sputter particles on a target are generated with respect to a chamber, is moved, pressure around the sputtering region is accurately obtained. A film forming device (1) has a chamber (10) where a film formation object (6) and a target (2) are disposed, moves a sputtering region (A1) generating sputter particles from the target into the chamber, and deposits the sputter particles on the film formation object (6) to form a film. The film forming device (1) has a plurality of pressure sensors (7) disposed in the chamber (10) and acquiring pressure in the chamber (10). The plurality of pressure sensors (7) are disposed along the movement direction of the sputtering region (A1).

Description

FILM FORMING APPARATUS, FILM FORMING METHOD AND MANUFACTURING METHOD OF ELECTRONIC DEVICE

The present invention relates to a film forming apparatus, a film forming method, and a manufacturing method of an electronic device.

The sputtering method is widely known as a method of forming the thin film which consists of materials, such as a metal and a metal oxide, on the film-forming object, such as a board | substrate and the laminated body formed on the board | substrate. The sputtering apparatus which forms into a film by the sputtering method has the structure arrange | positioned facing the film-forming object and the target which consists of film-forming materials in a vacuum chamber. When a negative voltage is applied to the target, a plasma is generated in the vicinity of the target, and ionized inert gas elements collide with the target surface to release sputter particles from the target surface, and the released sputter particles to the film forming object. It is deposited and formed. In addition, a magnetron sputtering method is also known in which a magnet is disposed on the rear surface of a target (in the case of a cylindrical target, inside the target), and sputtered efficiently by increasing the electron density near the cathode by the generated magnetic field.

As this type of film forming apparatus of the related art, for example, the same ones described in Patent Document 1 are known. In this film forming apparatus, the target is formed by moving the target in parallel with the film forming surface of the film forming object. Patent Document 1 does not describe how to detect and adjust the pressure of the sputter gas in the chamber.

On the other hand, Patent Document 2 describes a bar for measuring the pressure in the chamber by a vacuum gauge (pressure sensor) fixed to the chamber, thereby adjusting the pressure in the chamber to a predetermined pressure. Also in the case where a target moves like patent document 1, it can be considered that the pressure in a chamber is adjusted to predetermined pressure using a pressure sensor like patent document 2.

Japanese Patent Publication No. 2015-172240 Japanese Patent Publication No. 2005-139549

In practice, however, the pressure in the chamber may not be uniform. For example, the pressure in a chamber may be nonuniform, such as a high pressure in the vicinity of the gas inlet which introduce | transduces a sputter gas, and a low pressure in the vicinity of the exhaust port connected to a vacuum pump. In the sputtering apparatus in which a cathode does not move in a chamber like patent document 2, the sputtering area | region where sputter particle is discharge | released from the surface of a target does not move in a chamber. Therefore, during the sputtering process, the pressure around the sputtering region is kept substantially constant. However, when the cathode moves in the chamber, for example, as in Patent Literature 1, the sputtering region moves with respect to the chamber, so that the pressure around the sputtering region changes during the sputtering process, resulting in a film thickness or film quality of the film to be formed. Will cause stains.

SUMMARY OF THE INVENTION An object of the present invention is to provide a film forming apparatus, a film forming method, and a method for manufacturing an electronic device, in which the pressure around the sputtered region can be accurately obtained when the sputtering region from which sputtered particles are released moves with respect to the chamber. Is in.

A film forming apparatus according to one aspect of the present invention has a film forming target and a chamber in which a target is disposed, and deposits the sputter particles on the film forming target while moving a sputtering region in the chamber to generate sputter particles from the target. A film forming apparatus, which is arranged in the chamber, has a plurality of pressure sensors for acquiring the pressure in the chamber, and the plurality of pressure sensors are arranged along the moving direction of the sputtering region.

The film forming method according to another aspect of the present invention is a film forming method including a sputter film forming step of placing a film forming object in a chamber and depositing and depositing sputtered particles flying from a target arranged opposite to the film forming object. The sputtering film forming step is a step of forming a film while relatively moving the sputtering region where the sputtered particles of the target are generated with respect to the chamber. In the sputtering film forming step, the sputtering film is disposed in the chamber along the moving direction of the sputtering region of the target. At least one of the plurality of pressure sensors may be used to acquire information of the pressure in the chamber, and adjust the pressure in the chamber.

Moreover, the manufacturing method of the electronic device as another aspect of this invention is an electronic device containing the sputter film deposition process of arrange | positioning a film-forming object in a chamber, depositing sputter | spatter particles which fly out of the target arrange | positioned facing the said film-forming object, and forming a film. The sputtering film forming step is a step of forming a film while relatively moving the sputtering region in which the sputtered particles of the target are generated in the chamber. In the sputtering film forming step, the sputtering film forming step is performed along the moving direction of the target. At least one of the plurality of pressure sensors arranged in the chamber, the information of the pressure in the chamber is obtained, and the pressure in the chamber is adjusted.

According to this invention, when the sputtering area | region where the sputtering particle on a target generate | occur | produces moves with respect to a chamber, the pressure around the sputtering area can be acquired correctly.

1: (A) is a schematic diagram which shows the structure of the film-forming apparatus of Embodiment 1, (B) is a side view of (A).
2: (A) and (B) is a schematic diagram which shows the pressure distribution and pressure regulation state in a chamber, (C) is a perspective view which shows the structure of the magnet unit of FIG.
(A) is a schematic diagram which shows the structure of the film-forming apparatus of Embodiment 2, (B)-(D) is a schematic diagram which shows the position of the magnet in a case.
4: (A) is a schematic diagram which shows the structure of the film-forming apparatus of Embodiment 3, (B) is a side view of (A).
5 is a diagram showing a general layer structure of an organic EL element.

EMBODIMENT OF THE INVENTION Below, embodiment of this invention is described in detail. However, the following embodiments are merely illustrative of the preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, in the following description, the hardware configuration, software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the apparatus are intended to limit the scope of the present invention only to them unless otherwise specified. It is not.

Embodiment 1

First, with reference to FIG. 1 (A) and FIG. 1 (B), the basic structure of the film-forming apparatus 1 of Embodiment 1 is demonstrated. The film forming apparatus 1 according to the present embodiment includes a substrate (including a laminate formed on the substrate) in the manufacture of various electronic devices such as semiconductor devices, magnetic devices, electronic parts, and optical parts. It is used to deposit and form a thin film. More specifically, the film forming apparatus 1 is preferably used in the manufacture of electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Especially, the film-forming apparatus 1 which concerns on this embodiment is especially applicable to manufacture of organic light emitting elements, such as organic EL (ErectroLuminescence) element, and organic photoelectric conversion elements, such as an organic thin film solar cell. . Moreover, the electronic device in this invention is a display apparatus (for example, organic electroluminescent display apparatus) provided with a light emitting element, an illumination apparatus (for example, organic electroluminescent apparatus), and the sensor provided with a photoelectric conversion element (for example, Organic CMOS image sensors).

5 schematically shows a general layer structure of an organic EL element. As shown in FIG. 5, the structure in which an organic electroluminescent element is formed into a board | substrate in order of an anode, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron carrying layer, an electron injection layer, and a cathode is common. The film-forming apparatus 1 which concerns on this embodiment is used suitably when forming a laminated film, such as a metal and metal oxide used for an electron injection layer and an electrode (cathode), by sputtering on an organic film. . In addition, not only the film-forming on an organic film but a combination of materials which can form a film with a sputter | spatter, such as a metal material and an oxide material, lamination can be formed into various surfaces.

As shown in FIG. 1A, the film forming apparatus 1 includes the chamber 10 in which the film forming object 6 and the target 2 are disposed, and the target 2 in the chamber 10. It has the magnet unit 3 (magnetic field generation means) arrange | positioned in the position which opposes the film-forming object 6 through. In this embodiment, the target 2 is cylindrical and comprises the rotating cathode unit 8 with the magnet unit 3 arrange | positioned inside. In the film forming process, the rotary cathode unit 8 is orthogonal to the rotation center axis along the plane parallel to the film formation surface of the film formation object 6 while the target 2 rotates about the rotation center axis thereof. Go to. On the other hand, the magnet unit 3 does not rotate differently from the target 2, and always generates a leakage magnetic field on the surface side of the target 2 that faces the film forming target 6, and the electrons in the vicinity of the target 2 are generated. Sputter by increasing density. The region in which the leak magnetic field is generated is the sputtering region A1 in which sputtered particles are generated. The sputtering area A1 of the target 2 moves with respect to the chamber 10 along the film formation surface of the film forming object 6 with the movement of the rotary cathode unit 8, and forms the film on the film forming object 6 sequentially. It is supposed to. In addition, although the magnet unit 3 does not rotate here, it is not limited to this, The magnet unit 3 may also rotate or oscillate.

The film forming object 6 is held by the holder 6a and is disposed horizontally on the ceiling wall 10d side of the chamber 10. The film forming object 6 is carried in from one gate valve 17 provided on the side wall of the chamber 10 and formed into a film, for example. After the film formation, the gate valve 18 provided on the other side wall of the chamber 10 is formed. Is discharged from. In the example of illustration, although it is set as the structure of what is called depot up in which the film-forming is performed in the state in which the film-forming surface of the film-forming object 6 was directed below the gravity direction, it is not limited to this. For example, the film formation object 6 is disposed on the bottom surface side of the chamber 10, and the rotary cathode 8 is disposed above the film formation object, and the film formation is performed in a state where the film formation surface of the film formation object 6 faces upward in the gravity direction. The so-called depot down configuration may be performed. Alternatively, the film formation may be performed in a state where the film forming object 6 is vertically formed, that is, the film forming surface of the film forming object 6 is parallel to the gravity direction.

As shown in FIG. 1B, the rotary cathode unit 8 has a structure in which both ends are supported by the support block 210 and the end block 220 fixed on the movable base 230. The cylindrical target 2 is rotatable, and the internal magnet unit 3 is supported in a fixed state. The moving table 230 is supported to be movable in the horizontal direction along the pair of guide rails 250 via a conveyance guide 240 such as a linear bearing. In the drawing, if the direction parallel to the guide rail 250 is the X axis, the vertical direction is the Z axis, and the horizontal plane is the Y axis to the orthogonal direction to the guide rail 250, the rotary cathode unit 8 has the Y axis. In the state facing the direction, while rotating about the rotation axis, it moves parallel to the film-forming object 6, ie, on the XY plane in the Y-axis direction.

The target 2 is rotationally driven by the target drive device 11 which is a rotation drive device. Although not shown, the target drive device 11 has a drive source such as a motor, in particular, and a general drive mechanism to which power is transmitted to the target 2 through a power transmission mechanism is applied. 210 or the end block 220 or the like. On the other hand, the movable table 230 is linearly driven in the Y-axis direction by the linear drive device 12. The linear drive device 12 is not particularly shown, but various well-known linear motion mechanisms such as a screw feed mechanism using a ball screw or the like that converts the rotational motion of the rotary motor into linear motion, a linear motor, and the like can be used. .

The target 2 is cylindrical in this embodiment, and functions as a supply source of the film-forming material which forms into a film-forming object 6. Although the material of the target 2 is not specifically limited, For example, metallic bodies, such as Cu, Al, Ti, Mo, Cr, Ag, Au, Ni, or the alloy containing these metal elements, or A compound is mentioned. The material of the target 2 may be a transparent conductive oxide such as ITO, IZO, IWO, AZO, GZO, IGZO, or the like. As for the target 2, the layer of the backing tube 2a which consists of another material is formed inside the layer in which these film-forming materials were formed. The power supply 13 is connected to this backing tube 2a, and functions as a cathode to which a bias voltage is applied from the power supply 13. The bias voltage may be applied to the target itself or there may be no backing tube. In addition, the chamber 10 is grounded. In addition, although the target 2 is a cylindrical target, the term "cylindrical" here does not mean only a mathematically rigid cylinder, but a "circle" whose mother line is not a straight line but a curve, or whose cross section perpendicular to the central axis is mathematically rigid. This includes anything that is not. That is, the target 2 in this invention should just be a cylindrical thing rotatable about a central axis.

The magnet unit 3 forms a magnetic field in the direction toward the film-forming object 6, and as shown in FIG. 2C, the center magnet 31 extending in a direction parallel to the rotation axis of the rotary cathode 8. ), And the center magnet 31 surrounding the center magnet 31 are provided with a peripheral magnet 32 having a bipolar electrode and a yoke plate 33. The peripheral magnet 32 is comprised by a pair of linear part 32a, 32b extended in parallel with the center magnet 31, and the rotation part 32c, 32d which connects the both ends of the linear part 32a, 32b. It is. The magnetic field formed by the magnet unit 30 has a magnetic force line returning in a loop shape from the magnetic pole of the center magnet 31 toward the straight portions 32a and 32b of the peripheral magnet 32. As a result, a toroidal magnetic field tunnel extending in the longitudinal direction of the target 2 is formed near the surface of the target 2. By this magnetic field, electrons are trapped, plasma is concentrated in the vicinity of the target 2 surface, and the sputtering efficiency is improved. The area | region of the surface of the target 2 in which the magnetic field of this magnet unit leaks is sputtering area | region A1 in which sputtering particle generate | occur | produces.

The gas introduction means 16 and the exhaust means 15 are connected to the chamber 10, and it is a structure which can hold an inside at predetermined pressure. These gas introduction means 16 and the exhaust means 15 constitute a pressure adjusting means. That is, in the chamber 10, sputter gas (inert gas such as argon or reactive gas such as oxygen or nitrogen) is introduced into the chamber 10 by the gas introduction means 16. Is introduced. In addition, from the inside of the chamber 10, the exhaust is performed by exhaust means 15 such as a vacuum pump through the exhaust port 5. As a result, the pressure inside the chamber 10 is adjusted to a predetermined pressure.

The gas introduction means 16 has a plurality of inlets 41 and 42, and a supply source such as a gas cylinder (not shown), a piping system connecting the supply source and the inlets 41, 42, and various vacuums provided in the piping system. It is comprised from a valve | bulb, a mass flow controller, etc., and the supply amount is adjustable by the flow control valve of a mass flow controller. The flow control valve is configured to be electrically controllable, such as an electromagnetic valve. Although the inlet openings 41 and 42 are shown so that it may be arrange | positioned at the vertical side wall of a chamber, it is not limited to a side wall, It may be provided in the bottom wall, and may be provided in the ceiling wall. In addition, the pipe may extend into the chamber, and the introduction port may be opened into the chamber 10. In addition, each introduction port 41 and 42 is provided in multiple numbers, and can also be set as the structure arrange | positioned along the long longitudinal direction of the target 2. As shown in FIG.

The exhaust means 15 includes a vacuum pump and a piping system for connecting the vacuum pump and the exhaust port 54. An electrical controllable flow rate control valve such as a conductance valve is provided in the piping system, and the exhaust gas is adjusted by the control valve. It is possible. Although the exhaust port 5 is provided in the bottom wall in the example of illustration, it is not limited to a bottom wall, It may be provided in the vertical side wall, and may be provided in the ceiling wall. In addition, the piping may extend into the chamber, and the exhaust port 5 may be opened into the chamber 10.

In the example of illustration, the introduction ports 41 and 42 of the said gas introduction means 16 are the side wall 10b of the start end side of the movement range which the rotation target unit 8 linearly moves, and the terminal end. The exhaust port 5 is provided on the bottom wall 10c side of the center position of a linear movement range. In the sputtering process, while introducing the sputter gas from the inlet 4, the exhaust gas is exhausted from the exhaust port 5 to maintain a predetermined predetermined pressure, and the pressure distribution P0 (x) in the chamber 10 is shown in FIG. As shown in A), the start end and the end side are relatively high, and the center part with the exhaust port 5 is in a low state.

In this invention, the some pressure sensor 7 which acquires the pressure in this chamber 10 is arrange | positioned in the chamber 10 along the moving direction (direction parallel to an X axis) of the sputtering area A1. . The plurality of pressure sensors 7 are arranged at substantially the same height as the sputtering region A1, and are arranged in a line at a constant interval linearly in the moving direction. In the example of illustration, although the seven pressure sensors 7 are being fixed to the side wall (rear wall) 10f inside the chamber 10, you may arrange | position it to the front side wall (front wall) 10e, and both the front and the inside are both. You may fix to the side wall of the. In addition, although the height of the pressure sensor 7 is set to almost the same height as the sputtering area | region A1, it may be arrange | positioned rather than the sputtering area | region A1 on the film-forming object 6 side, and it forms into a film with respect to the sputtering area | region A1. It may be arrange | positioned at the side away from the object 6 and the opposite side. From the viewpoint of making the film thickness produced in the film forming object 6 uniform, it is very suitable to arrange the film forming object 6 from the sputtering region A1 in the vicinity. Moreover, you may arrange | position two rows at two places of the film-forming object 6 rather than the height of sputtering area | region A1 and sputtering area | region A1, and the number of rows is arbitrary. In addition, the space | interval of the pressure sensor 7 does not need to be constant, For example, you may change according to pressure distribution. For example, it can set suitably, such as narrowing the space | interval of the pressure sensor 7 of the area | region with a large change, and widening the space | interval of the pressure sensor 7 of the area with small pressure change. In the case of this embodiment, specifically, the space | interval of the two adjacent pressure sensors located in the vicinity of the exhaust port 5 is mutually adjacent two mutually positioned in the position which is located from the exhaust port 5 rather than the said two pressure sensors. You may make it larger than the space | interval of two pressure sensors. Thereby, the number of the pressure sensors 7 can be reduced, while measuring the pressure around the moving sputtering area A1 precisely.

As the pressure sensor 7, various vacuum systems, such as a diaphragm vacuum system, such as a capacitance manometer, a thermally conductive vacuum system, such as a Piranha vacuum system and a thermocouple vacuum system, and a quartz friction vacuum system, can be used. Each pressure sensor 7 is connected to the control part 14, and based on the information of the pressure acquired by the pressure sensor 7, the gas introduction means 16 and the exhaust means 15 which comprise a pressure adjustment means are made. It controls so that the pressure in the chamber 10 may be adjusted.

Next, the operation of the film forming apparatus 1 will be described. In the sputtering step, the control unit 14 drives the target drive mechanism 11 to rotate the target 2, applies a bias voltage from the power source 13, and drives the linear drive device 12. The rotary cathode unit 8 is moved at a predetermined speed from the start of the movement range in the linear motion direction. When a bias potential is applied, plasma is concentrated and generated near the surface of the target 2 facing the film formation object 6 by the magnet unit 3, and gas ions in the cation state in the plasma cause the target 2 to be concentrated. Sputtered and scattered sputtered particles are deposited on the film forming target 6. With the movement of the rotating cathode unit 8, it forms into a film by depositing sputter | spatter particles sequentially from the upstream of the moving direction of the rotating cathode unit 8 to a downstream side.

In this embodiment, gas inlets 41 and 42 are provided at the start end and the end side of the movement path of the rotary cathode unit 8, and the bottom wall 10c near the center of the movement path of the rotation cathode unit 8 is provided. The exhaust port 5 is arranged in the. Therefore, as shown in FIG. 2 (A), the pressure inside the chamber 10 has a high pressure at the start side and the end side of the movement path of the rotary cathode unit 8, and has a low pressure near the center. It has become a pressure distribution. In the control part 14, the positional information of each of the some pressure sensor 7 is memorize | stored. On the other hand, the positional information and the information of the movement direction in the chamber 10 of the rotating cathode unit 8 are detected by an encoder, for example, and the control part 14 makes the control part 14 of the rotating cathode unit 8, for example. The positional information and the movement direction information of the sputtering area A1 are acquired.

Based on this positional information and the movement direction information, the pressure information in a movement position by the at least one pressure sensor 7 in the vicinity of the sputtering area | region A1 or the movement direction front among the several pressure sensors 7 is carried out. Get. Based on this pressure information, the pressure in the chamber 10 is adjusted by the gas introduction means 16 and the exhaust means 15 which are pressure adjustment means. For example, when the positional information of the rotary cathode unit 8 is located in the vicinity of one pressure sensor 7, one pressure sensor 7 is selected and the pressure obtained from the selected pressure sensor 7 is selected. Pressure adjustment is performed based on the information. In addition, at least two pressure sensors 7 may be selected from the pressure sensor 7 located nearby and the pressure sensor 7 located forward of the travel direction. In this way, the area in front of the advancing direction is adjusted in advance, and in the film forming step, the pressure around the sputtering area A1 can be maintained at a pressure closer to the target value. The front and rear two pressure sensors 7 may proportionally distribute the pressure information from the selected pressure sensor 7, or may use only the pressure information of the front pressure sensor. In addition, you may select three pressure sensors and acquire the pressure information from these pressure sensors. Selection of this pressure sensor 7 is performed by the control part 14, In this embodiment, the control part 14 is a selection means of the pressure sensor 7.

2B schematically illustrates a control state. That is, P0 (x) represents the pressure distribution of the initial state. The target pressure is called pt. For example, if the position in the X-axis direction of the rotary cathode unit 8 is x1 and the detected pressure is P0 (x1), the difference Δ1 from the target pressure pt is (P0 (x1)-(pt)). . In this embodiment, when the absolute value of this difference (DELTA) 1 is below a predetermined value, the pressure is adjusted with the exhaust means 15, and when the absolute value is larger than the predetermined value, it is with the exhaust means 15 and the gas introduction means 16. Adjust the pressure About the adjustment amount of the exhaust means 15 and the gas introduction means 16, the relationship between a differential pressure and an adjustment amount is calculated | required in advance, it is memorize | stored in the control part 14, and it controls by the exhaust means 15 and the gas introduction means 16. The signal is output. In reality, there is a time difference from the point of instruction until the gas pressure reaches the target pressure pt. However, in FIG. 2B, when the time difference is ignored, the pressure distribution changes from P 0 (x) to P 1 (x).

In addition, when the rotating cathode unit 8 advances to x2, if the pressure acquired by the pressure sensor 7 is P1 (x2), the difference (DELTA) 2 from target pressure pt will be (P0 (x2)-(pt)). Becomes negative and the absolute value is smaller than the difference Δ1. When the absolute value of the difference Δ2 is equal to or less than the predetermined value, the pressure is adjusted by the exhaust means 15, and when the absolute value is larger than the predetermined value, the pressure is adjusted by the exhaust means 15 and the gas introduction means 16. For example, when there is a threshold between the absolute value of the difference Δ1 and the difference Δ2, the exhaust means 15 and the gas introduction means 16 are adjusted at the position of x1, and the exhaust means 15 at the position of x2. Adjust the pressure only with). In this way, even if the pressure distribution of the gas pressure is in a non-uniform chamber, the pressure at the moving position of the rotary cathode 8 is detected and the difference from the target pressure is controlled to be zero, so that the rotary cathode unit 8 is The pressure in the vicinity of the sputtering region A can be adjusted almost uniformly, and the film thickness and film quality of the film produced on the film forming object 6 due to the pressure difference can be formed almost uniformly.

Next, another embodiment of the present invention will be described. In the following description, only a different point from Embodiment 1 is mainly described, and the same code | symbol is attached | subjected about the same component, and description is abbreviate | omitted.

Embodiment 2

FIG. 3A illustrates a film forming apparatus 102 according to Embodiment 2 of the present invention. In the film forming apparatus 102 according to the second embodiment, the planar cathode unit 308 using the flat target 302 is used instead of the rotating cathode unit using the cylindrical target 302. The planar cathode unit 308 has a target 302 arranged in parallel with the film forming object, and the magnet unit 3 serving as the magnetic field generating means is disposed on the side opposite to the film forming object 6 of the target 302. . Moreover, the backing plate 302a to which electric power is applied from the power supply 13 is provided in the surface on the opposite side to the film-forming object 6 of the target 302, and is arrange | positioned before and behind the moving direction of the case 306. It is fitted to the case plates 361 and 362 and is fixed integrally. The magnet unit 3 is fixed to the bottom plate 363.

The planar cathode unit 308 is fixed to the upper surface of the movable table 230, and in the film forming process, the planar cathode unit 308 is along the surface parallel to the film forming surface of the film forming object 6, and thus the target 302. Move in a direction perpendicular to the long length direction of The vicinity of the surface of the target 302 facing the film formation target 6 is a sputtering region A1 in which the electron density increases due to the magnetic field generated by the magnet unit 3. In the film-forming process, with the movement of the planar cathode unit 308, the sputtering area | region A1 moves along the film-forming surface of the film-forming object 6, and is formed into the film-forming object 6 sequentially. And similarly to Embodiment 1, the some pressure sensor 7 which acquires the pressure in this chamber 10 is arrange | positioned in the chamber 10 along the moving direction of the sputtering area | region A1. The arrangement and function of the pressure sensor 7 are the same as those in the first embodiment, and description is omitted.

In addition, as shown to FIG. 3 (B)-(D), even in the case 306 of the planar cathode unit 308, even if the magnet unit 3 is made to be relatively movable with respect to the target 302. FIG. do. In this way, the sputtering area A1 can be relatively moved away from the target 302, and the utilization efficiency of the target 302 can be improved.

Embodiment 3

4 shows a film forming apparatus 104 according to Embodiment 3 of the present invention. In FIG.3 (B)-(D) of the said Embodiment 2, in the planar cathode unit 308, the magnet unit 3 was made to be relatively movable with respect to the target 302. FIG. On the other hand, in this Embodiment 3, the plate-shaped target 402 is larger than the film-forming object 6 in both the X-axis direction and the Y-axis direction, and is being fixed to the chamber 10 and is provided. In addition, the sputtering in which the magnet unit 3 as the magnetic field generating means moves with respect to the target 402 fixed to the chamber 10 (that is, with respect to the chamber 10), and the target particles of the target 402 are released. The area A1 is moved along the film formation object 6.

The target 402 is disposed at the boundary between the vacuum region and the atmospheric region, and the magnet unit 3 is placed in the atmosphere outside the chamber 10. That is, as shown to Fig.4 (A), the target 402 is arrange | positioned so that the opening part 10c1 provided in the bottom wall 10c of the chamber 10 may be sealed airtight, and the target 402 is the chamber 10 It faces the inner space of), and opposes the film-forming object 6. Here, the backing plate 402a to which electric power is applied from the power supply 13 is provided in the surface on the opposite side to the film-forming object 6 of the target 402, and the backing plate 402a is facing the outer space. .

The magnet unit 3 is disposed outside the chamber 10, and the pressure sensor 7 is disposed in the chamber 10. The magnet unit 3 is supported by the magnet unit moving device 430 outside the chamber 10, and is movable in the X-axis direction along the target 402. The magnet unit 3 is driven by the magnet drive device 121 driving the magnet unit moving device 430. The magnet unit moving device 430 is a device for linearly guiding the magnet unit 3 in the X-axis direction. Although not particularly illustrated, the magnet unit moving device 430 includes a guide for supporting the magnet unit 3 and a rail for guiding the moving table. And the like. By the movement of this magnet unit 3, the sputtering area | region A1 moves to an X-axis direction. The pressure sensor 7 is arrange | positioned in multiple numbers along the moving direction (X-axis direction) of the sputtering area | region A1 similarly to Embodiment 1 and 2. As shown in FIG. The magnet drive apparatus 121 is controlled by the control apparatus 14, selects the pressure sensor 7 closest to the sputtering area A1 according to the positional information of the magnet unit 3, and is located in the vicinity of the sputtering area. Obtain pressure information.

In this embodiment, since the target 402 is arrange | positioned at the bottom wall 10c of the chamber 10, the exhaust ports 51 and 52 are front walls (side walls) of the chamber 10, as shown to FIG. 10e and rear wall (side wall) 10f. In addition, the sensor movement apparatus 450 and the pressure sensor 7 are both sides of the long longitudinal direction (Y-axis direction) of the magnet unit 3, ie, the front wall 10e of the chamber 10 and the rear wall 10f of the chamber. ), The pressure on both sides of the long length direction (Y-axis direction) of the magnet unit 3 is detected. The detection value is adjusted, for example, as an average value. Of course, you may provide the pressure sensor 7 in either one of the front wall 10e and the back wall 10f of the chamber 10. FIG.

[Other Embodiments]

Moreover, in the said embodiment, although the case where the rotating cathode unit 8 and the planar cathode unit were one was illustrated, the film-forming in which the rotary cathode 8 and the planar cathode unit 308 were arrange | positioned inside the chamber 10 in multiple numbers was formed. Applicable to the device as well. For example, in the case of the rotating cathode unit 8, it has a plurality of magnet units 3, and a plurality of targets 2 are disposed corresponding to each of these magnet units 3, and each of the magnet units 3 and Each of the corresponding targets 2 constitutes a rotating cathode unit 8 which is a plurality of target units, and the linear driving device 12 moves the plurality of rotating cathode units 8 together. In addition, in the case of the planar cathode unit 308, it has a plurality of magnet units 3, and a plurality of targets 302 are disposed corresponding to each of these magnet units 3, and corresponding to each magnet unit 3. Each target 302 comprises a planar cathode unit 8 that is a plurality of target units, and the linear drive device 12 moves the plurality of planar cathode units 8 together.

1: deposition device
2, 302, 402: target
6: the tabernacle object
7: pressure sensor
10: chamber
12: linear drive device (moving means)
A1: Sputtering Area

Claims (18)

A film forming apparatus having a film forming target and a target chamber, wherein the sputtered particles are deposited on the film forming target while the sputtering region for generating sputter particles from the target is moved within the chamber.
It is arranged in the said chamber, and has a some pressure sensor which acquires the pressure in the said chamber,
The said some pressure sensor is arrange | positioned along the moving direction of the said sputtering area | region, The film-forming apparatus characterized by the above-mentioned. The method of claim 1,
And a pressure adjusting means for adjusting the pressure in the chamber,
And the pressure adjusting means adjusts the pressure based on the information of the pressure acquired by at least one of the plurality of pressure sensors. The method of claim 2,
The pressure adjusting means includes an exhaust means and a gas introduction means,
When the absolute value of the difference between the pressure acquired by the pressure sensor and the target pressure is equal to or less than a predetermined value, the pressure is adjusted by the exhaust means; when the absolute value is larger than the predetermined value, the pressure is released by the exhaust means and the gas introduction means. Deposition apparatus, characterized in that for adjusting the. The method of claim 3,
The gas introduction means has a plurality of gas introduction ports for introducing gas into the chamber,
The plurality of gas introduction ports are arranged along a long longitudinal direction of the target to be arranged. The method according to any one of claims 2 to 4,
And a selection means for selecting at least one of the pressure sensors used for adjustment of the pressure by the pressure adjustment means, based on the positional information of the sputtering region, from the plurality of pressure sensors. The method of claim 5,
And the pressure adjusting means adjusts the pressure in the chamber so that the pressure obtained by the pressure sensor selected by the selecting means becomes a target pressure. The method according to claim 5 or 6,
And the selecting means selects a pressure sensor used for adjusting the pressure by the pressure adjusting means, based on at least one of positional information of the sputtering region and moving direction information of the sputtering region. The method according to any one of claims 5 to 7,
The said selecting means selects the pressure sensor located in the vicinity of the said target among the said plurality of pressure sensors. The method according to any one of claims 5 to 8,
The selection means selects at least two pressure sensors from among the plurality of pressure sensors, a pressure sensor located near the target and a pressure sensor located forward of the target of the pressure sensor. Film forming device. The method according to any one of claims 1 to 9,
And the sputtering region is moved by moving the target in a direction crossing the long longitudinal direction of the target to be arranged. The method according to any one of claims 1 to 10,
And the target is cylindrical and further has a rotating means for rotating the target. The method according to any one of claims 1 to 10,
The film forming apparatus, wherein the target is flat. The method according to any one of claims 1 to 12,
A plurality of the target is arranged side by side in the chamber,
And the plurality of targets arranged to move together. The method according to any one of claims 1 to 9,
The target has a flat plate shape extending in the moving direction of the sputtering region,
The target is fixed to the chamber is installed,
And the sputtering region is moved by moving a magnetic field generating means with respect to the chamber. A film forming method comprising a sputter film forming step of depositing a film forming object in a chamber and depositing sputtered particles flying from a target disposed to face the film forming object.
The sputtering film forming step is a step of forming a film while relatively moving the sputtering region where the sputtered particles of the target are generated with respect to the chamber,
In the sputtering film forming process, information on the pressure in the chamber is obtained by at least one of a plurality of pressure sensors disposed in the chamber along the moving direction of the sputtering region of the target, and the pressure in the chamber is adjusted. Film formation method. The method of claim 15,
Adjustment of the pressure in the said chamber is adjustment of the pressure in the position of the said sputtering area in the said chamber to the target pressure, The film-forming method characterized by the above-mentioned. The method according to claim 15 or 16,
And the sputtering region is a region in which a leakage magnetic field is formed by a magnetic field of a magnetic field generating means disposed at a position facing the film forming object via the target. A method of manufacturing an electronic device comprising a sputter film forming step of depositing a film forming object in a chamber and depositing and depositing sputtered particles flying from a target disposed to face the film forming object.
The sputtering film forming step is a step of forming a film while relatively moving the sputtering region where the sputtered particles of the target are generated with respect to the chamber,
In the sputter film forming step, the pressure information in the chamber is obtained by adjusting the pressure in the chamber by at least one of a plurality of pressure sensors disposed in the chamber along the moving direction of the target. Method of manufacturing the device.

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