KR102632430B1 - Film forming apparatus, film forming method and manufacturing method of electronic device - Google Patents

Abstract

[Problem] When the sputtering area where sputtered particles on the target are generated moves with respect to the chamber, accurately acquire the pressure around the sputtering area.
[Solution] It has a chamber 10 in which the film forming object 6 and the target 2 are disposed, and the sputtering area A1 that generates sputter particles from the target 2 is moved within the chamber 10. A film forming apparatus 1 that deposits sputtered particles on a film forming object 6 to form a film, has a plurality of pressure sensors 7 disposed in a chamber 10 and acquires the pressure within the chamber 10, and includes a plurality of The pressure sensor 7 is characterized by being arranged along the movement direction of the sputtering area A1.

Description

Film forming apparatus, film forming method, and manufacturing method of electronic device {FILM FORMING APPARATUS, FILM FORMING METHOD AND MANUFACTURING METHOD OF ELECTRONIC DEVICE}

The present invention relates to a film forming apparatus, a film forming method, and a manufacturing method of an electronic device.

The sputtering method is widely known as a method of forming a thin film made of a material such as a metal or metal oxide on a film-forming object such as a substrate or a laminate formed on the substrate. A sputtering device that performs film formation by a sputtering method has a structure in which a target made of a film forming material and a film forming object are arranged to face each other in a vacuum chamber. When a negative voltage is applied to the target, plasma is generated near the target, ionized inert gas elements collide with the target surface, and sputter particles are emitted from the target surface. It is deposited and made into a tabernacle. Additionally, a magnetron sputtering method is also known, in which a magnet is placed on the back of the target (inside the target in the case of a cylindrical target), and sputtering is performed efficiently by increasing the electron density near the cathode using a generated magnetic field.

As a conventional film forming apparatus of this type, for example, one such as that described in Patent Document 1 is known. This film forming apparatus is designed to form a film by moving the target in parallel with the film forming surface of the film forming object. Patent Document 1 does not describe how to detect the pressure of the sputter gas in the chamber and adjust the pressure.

On the other hand, Patent Document 2 describes measuring the pressure within the chamber using a vacuum gauge (pressure sensor) fixed to the chamber and thereby adjusting the pressure within the chamber to a predetermined pressure. Even in cases where the target moves as in Patent Document 1, it is conceivable to adjust the pressure in the chamber to a predetermined pressure using a pressure sensor, as in Patent Document 2.

Japanese Patent Publication No. 2015-172240 Japanese Patent Publication No. 2005-139549

However, in reality, the pressure within the chamber may not be uniform. For example, the pressure within the chamber may be uneven, such as high pressure near the gas inlet where sputter gas is introduced, and low pressure near the exhaust port connected to the vacuum pump. In a sputtering device in which the cathode does not move within the chamber, such as in Patent Document 2, the sputtering area where sputter particles are emitted from the surface of the target does not move within the chamber. Therefore, during the sputtering process, the pressure surrounding the sputtering area remains substantially constant. However, for example, when the cathode moves within the chamber as in Patent Document 1, the sputtering area moves with respect to the chamber, so during the sputtering process, the pressure around the sputtering area changes, affecting the film thickness and film quality of the film to be deposited. Stains appear.

An object of the present invention is to provide a film forming apparatus, a film forming method, and an electronic device manufacturing method that can accurately acquire the pressure around the sputtering area when the sputtering area from which sputter particles are emitted moves with respect to the chamber. It's in the thing.

A film forming apparatus as one aspect of the present invention has a chamber in which a film forming object and a target are disposed, and a sputtering area that generates sputtered particles from the target is moved within the chamber, and the sputtered particles are deposited on the film forming object to form a film. A film forming apparatus comprising a plurality of pressure sensors disposed within the chamber and acquiring pressure within the chamber, wherein the plurality of pressure sensors are arranged along a moving direction of the sputtering region.

In addition, the film forming method as another aspect of the present invention is a film forming method including a sputter film forming process of placing a film forming object in a chamber and forming a film by depositing sputter particles flying from a target arranged opposite to the film forming object, The sputter film deposition process is a process of forming a film while moving the sputtering area where sputter particles of the target are generated relative to the chamber. In the sputter film forming process, the target is disposed in the chamber along the movement direction of the sputtering area. Information on the pressure within the chamber is acquired by at least one of a plurality of pressure sensors, and the pressure within the chamber is adjusted.

In addition, a method of manufacturing an electronic device as another aspect of the present invention includes a sputter film deposition process of placing a film forming object in a chamber and forming a film by depositing sputter particles flying from a target disposed opposite to the film forming object. In the manufacturing method, the sputter film deposition process is a process of forming a film while relatively moving a sputtering area in which sputter particles of the target are generated within the chamber, and in the sputter film formation process, the sputter film formation process is performed along the movement direction of the target. Information on the pressure within the chamber is acquired by at least one of a plurality of pressure sensors disposed within the chamber, and the pressure within the chamber is adjusted.

According to the present invention, when the sputtering area where sputtered particles on the target are generated moves with respect to the chamber, the pressure around the sputtering area can be accurately acquired.

[Figure 1] (A) is a schematic diagram showing the configuration of the film forming apparatus of Embodiment 1, and (B) is a side view of (A).
[FIG. 2] (A) and (B) are schematic diagrams showing the pressure distribution and pressure regulation state in the chamber, and (C) is a perspective view showing the configuration of the magnet unit in FIG. 1.
[FIG. 3] (A) is a schematic diagram showing the configuration of the film forming apparatus of Embodiment 2, and (B) to (D) are schematic diagrams showing the positions of magnets in the case.
[FIG. 4] (A) is a schematic diagram showing the configuration of the film forming apparatus of Embodiment 3, and (B) is a side view of (A).
[Figure 5] A diagram showing the general layer structure of an organic EL device.

EMBODIMENT OF THE INVENTION Below, embodiment of this invention is described in detail. However, the following embodiments merely exemplify preferred configurations of the present invention and do not limit the scope of the present invention to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. are intended to limit the scope of the present invention to these alone, unless otherwise specified. It's not.

[Embodiment 1]

First, with reference to FIG. 1(A) and FIG. 1(B), the basic configuration of the film forming apparatus 1 of Embodiment 1 will be described. The film forming apparatus 1 according to the present embodiment is used on a substrate (including a laminate formed on a substrate) in the manufacture of various electronic devices such as semiconductor devices, magnetic devices, electronic components, and optical components. It is used to deposit and form a thin film. More specifically, the film forming apparatus 1 is preferably used in the manufacture of electronic devices such as light-emitting elements, photoelectric conversion elements, and touch panels. Among them, the film forming device 1 according to the present embodiment can be particularly preferably applied in the production of organic light-emitting devices such as organic EL (ErectroLuminescence) devices and organic photoelectric conversion devices such as organic thin-film solar cells. . In addition, the electronic device in the present invention includes a display device (for example, an organic EL display device) or a lighting device (for example, an organic EL lighting device) with a light-emitting element, or a sensor (for example, with a photoelectric conversion element). For example, organic CMOS image sensors) will also be included.

Figure 5 schematically shows the general layer structure of an organic EL element. As shown in FIG. 5, an organic EL device generally has a structure in which an anode, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed on a substrate in that order. The film forming apparatus 1 according to the present embodiment is suitably used when forming a laminated film of a metal or metal oxide used in an electron injection layer or an electrode (cathode) on an organic film by sputtering. . Furthermore, it is not limited to film formation on an organic film, and lamination film formation on various surfaces is possible as long as it is a combination of materials that can be filmed by sputtering, such as metal materials and oxide materials.

As shown in FIG. 1 (A), the film forming apparatus 1 includes a chamber 10 in which a film forming object 6 and a target 2 are disposed, and a target 2 within the chamber 10. It has a magnet unit 3 (magnetic field generating means) interposed and disposed at a position opposite to the film forming object 6. In this embodiment, the target 2 has a cylindrical shape and constitutes a rotating cathode unit 8 together with a magnet unit 3 disposed therein. In the film forming process, the rotating cathode unit 8 rotates the target 2 about its rotational central axis, along a plane parallel to the film deposition surface of the film forming object 6, in a direction perpendicular to the rotational central axis. Go to On the other hand, unlike the target 2, the magnet unit 3 does not rotate, but always generates a leakage magnetic field on the surface side of the target 2 facing the film-forming object 6, and generates electrons near the target 2. Sputter by increasing density. The area where this leakage magnetic field is generated is the sputtering area (A1) where sputtered particles are generated. The sputtering area A1 of the target 2 moves with respect to the chamber 10 along the deposition surface of the deposition object 6 along with the movement of the rotating cathode unit 8, and sequentially deposits a film on the deposition object 6. It is supposed to be done. In addition, although the magnet unit 3 is assumed not to rotate here, the present invention is not limited to this, and the magnet unit 3 may also rotate or shake.

The film-forming object 6 is held by the holder 6a and is horizontally placed on the ceiling wall 10d of the chamber 10. For example, the film-forming object 6 is brought in and formed into a film through one gate valve 17 installed on the side wall of the chamber 10, and after film-forming, the film-forming object 6 is transferred through the gate valve 18 installed on the other side wall of the chamber 10. is emitted from In the illustrated example, a so-called depot-up configuration is used in which film formation is performed with the film-forming surface of the film-forming object 6 facing downward in the direction of gravity, but the configuration is not limited to this. For example, the film deposition object 6 is disposed on the bottom side of the chamber 10, the rotary cathode 8 is disposed above it, and the film deposition is performed with the film deposition surface of the film deposition object 6 facing upward in the direction of gravity. It may be a so-called depot down configuration that is performed. Alternatively, the configuration may be such that the film formation is performed in a state where the film formation object 6 is standing vertically, that is, the film formation surface of the film formation object 6 is parallel to the direction of gravity.

As shown in FIG. 1 (B), the rotating cathode unit 8 has a configuration in which both ends are supported by a support block 210 and an end block 220 fixed on a moving table 230. , the cylindrical target 2 is rotatable, and the internal magnet unit 3 is supported in a fixed state. The moving table 230 is supported so as to be movable in the horizontal direction along a pair of guide rails 250 via a conveyance guide 240 such as a linear bearing. In the drawing, if the direction parallel to the guide rail 250 is the In the direction facing state, it rotates around the rotation axis and moves parallel to the film forming object 6, that is, in the Y-axis direction on the XY plane.

The target 2 is rotationally driven by the target drive device 11, which is a rotation drive device. The target driving device 11, although not specifically shown, has a driving source such as a motor, and a general driving mechanism in which power is transmitted to the target 2 through a power transmission mechanism is applied, for example, a support block ( 210) or end block 220. Meanwhile, the moving table 230 is driven linearly in the Y-axis direction by the linear driving device 12. Regarding the linear drive device 12, although not specifically shown, various known linear motion mechanisms such as a linear motor and a screw feed mechanism using a ball screw or the like that converts the rotational motion of a rotary motor into linear motion can be used. .

The target 2 has a cylindrical shape in this embodiment and functions as a supply source of film-forming material for forming a film on the film-forming object 6. The material of the target 2 is not particularly limited, but for example, it is a single metal such as Cu, Al, Ti, Mo, Cr, Ag, Au, Ni, or an alloy containing these metal elements. Compounds may be mentioned. The material of the target 2 may be a transparent conductive oxide such as ITO, IZO, IWO, AZO, GZO, or IGZO. In the target 2, a layer of a backing tube 2a made of another material is formed inside the layer on which these film forming materials are formed. A power source 13 is connected to this backing tube 2a, and it functions as a cathode to which a bias voltage is applied from the power source 13. The bias voltage can be applied to the target itself, and there is no need for a backing tube. Additionally, chamber 10 is grounded. In addition, the target 2 is a cylindrical target, but "cylindrical" here does not mean only a mathematically strict cylindrical shape. The generatrix is not a straight line but a curve, and the cross section perpendicular to the central axis is a mathematically strict "circle". It also includes things that are not. That is, the target 2 in the present invention may be cylindrical and rotatable about the central axis.

The magnet unit 3 forms a magnetic field in the direction toward the film forming object 6, and as shown in FIG. 2(C), the center magnet 31 extends in a direction parallel to the rotation axis of the rotary cathode 8. ), peripheral magnets 32 surrounding the center magnet 31 and having different polarities from the center magnet 31, and a yoke plate 33. The peripheral magnet 32 is composed of a pair of straight parts 32a, 32b extending in parallel with the center magnet 31, and rotating parts 32c, 32d connecting both ends of the straight parts 32a, 32b. It is done. The magnetic field formed by the magnet unit 30 has lines of magnetic force that return in a loop shape from the magnetic pole of the central magnet 31 toward the straight portions 32a and 32b of the peripheral magnets 32. As a result, a toroidal-shaped magnetic field tunnel extending in the longitudinal direction of the target 2 is formed near the surface of the target 2. By this magnetic field, electrons are captured, plasma is concentrated near the surface of the target 2, and sputtering efficiency is improved. The area of the surface of the target 2 where the magnetic field of this magnet unit leaks is the sputtering area A1 where sputtered particles are generated.

The chamber 10 is connected to a gas introduction means 16 and an exhaust means 15, and is configured to maintain the interior at a predetermined pressure. These gas introduction means 16 and exhaust means 15 constitute the pressure adjustment means. That is, inside the chamber 10, sputter gas (an inert gas such as argon or a reactive gas such as oxygen or nitrogen) is introduced through the inlet ports 41 and 42 provided in the chamber 10 by the gas introduction means 16. ) is introduced through. Additionally, exhaust is performed from the inside of the chamber 10 through an exhaust port 5 by an exhaust means 15 such as a vacuum pump. As a result, the pressure inside the chamber 10 is regulated to a predetermined pressure.

The gas introduction means 16 has a plurality of inlet ports 41 and 42, a supply source such as a gas cylinder (not shown), a piping system connecting the supply source and the inlet ports 41 and 42, and various vacuum systems installed in the piping system. It is composed of a valve, a mass flow controller, etc., and the supply amount can be adjusted by the flow control valve of the mass flow controller. The flow control valve has an electrically controllable structure, such as an electromagnetic valve. The inlet ports 41 and 42 are shown as being arranged on the vertical side walls of the chamber, but are not limited to the side walls and may be installed on the bottom wall or on the ceiling wall. Additionally, the pipe may extend into the chamber and the inlet may be open into the chamber 10. In addition, each of the introduction ports 41 and 42 may be provided in plural numbers and arranged along the longitudinal direction of the target 2.

The exhaust means 15 includes a vacuum pump and a piping system connecting the vacuum pump and the exhaust port 54. An electrically controllable flow control valve such as a conductance valve is installed in the piping system, and the exhaust amount is adjusted by the control valve. It is possible. Although the exhaust port 5 is installed on the bottom wall in the illustrated example, it is not limited to the bottom wall and may be installed on a vertical side wall or on a ceiling wall. Additionally, the pipe may extend into the chamber and the exhaust port 5 may be open into the chamber 10.

In the illustrated example, the introduction ports 41 and 42 of the above-mentioned gas introduction means 16 are connected to the side wall 10b at the starting end of the movement range in which the rotation target unit 8 moves linearly, and the longitudinal end. ) on the side wall 10a, and the exhaust port 5 is installed on the bottom wall 10c at the center of the linear movement range. In the sputtering process, the sputter gas is introduced through the inlet 4 and discharged from the exhaust port 5 to maintain a constant predetermined pressure, and the pressure distribution P0(x) in the chamber 10 is shown in FIG. 2 ( As shown in A), the starting and ending sides are relatively high, and the central part where the exhaust port 5 is located is low.

In the present invention, a plurality of pressure sensors 7 that acquire the pressure within the chamber 10 are arranged within the chamber 10 along the moving direction (direction parallel to the X axis) of the sputtering area A1. . The plurality of pressure sensors 7 are arranged at approximately the same height as the sputtering area A1, and are arranged in a line at regular intervals in the direction of movement. In the illustrated example, the seven pressure sensors 7 are fixed to the side wall (rear wall) 10f inside the chamber 10, but may be placed on the front side wall (front wall) 10e, and can be installed on both the front and inside sides. It can be fixed to the side wall of . In addition, the height of the pressure sensor 7 is set to be approximately the same height as the sputtering area A1, but it may be disposed closer to the film forming object 6 than the sputtering area A1. It may be arranged on a side opposite to the object 6. From the viewpoint of uniformizing the film thickness generated on the film-forming object 6, it is most suitable to place it on the side of the film-forming object 6 from the vicinity of the sputtering area A1. Additionally, two rows may be arranged at the height of the sputtering area A1 and at two locations on the film-forming object 6 above the sputtering area A1, and the number of rows may be arbitrary. Additionally, the spacing between the pressure sensors 7 does not need to be constant, and may vary depending on the pressure distribution, for example. For example, it can be set appropriately, such as narrowing the spacing between the pressure sensors 7 in the area where the pressure change is large and widening the spacing between the pressure sensors 7 in the area where the pressure change is small. In the case of this embodiment, specifically, the interval between two adjacent pressure sensors located near the exhaust port 5 is equal to the distance between two adjacent pressure sensors located further away from the exhaust port 5 than the two pressure sensors. It may be larger than the spacing of two pressure sensors. As a result, the number of pressure sensors 7 can be reduced while measuring the pressure around the moving sputtering area A1 with high precision.

As the pressure sensor 7, various vacuum gauges such as diaphragm vacuum gauges such as capacitance manometers, heat conduction vacuum gauges such as Pirani vacuum gauges and thermocouple vacuum gauges, and crystal friction vacuum gauges can be used. Each pressure sensor 7 is connected to the control unit 14 and, based on the pressure information acquired by the pressure sensor 7, operates the gas introduction means 16 and the exhaust means 15 constituting the pressure adjustment means. By controlling, the pressure within the chamber 10 is adjusted.

Next, the operation of the film forming apparatus 1 will be explained. In the sputtering process, the control unit 14 drives the target drive mechanism 11 to rotate the target 2, applies a bias voltage from the power source 13, and drives the linear drive device 12, The rotating cathode unit 8 is moved at a predetermined speed from the starting end of the movement range in the linear movement direction. When the bias potential is applied, plasma is concentrated and generated near the surface of the target 2 facing the film forming object 6 by the magnet unit 3, and gas ions in the positive ion state in the plasma are generated by the target 2. The sputtered and scattered sputtered particles are deposited on the film forming object 6. As the rotating cathode unit 8 moves, sputtered particles are deposited sequentially from the upstream side to the downstream side in the moving direction of the rotating cathode unit 8, thereby forming a film.

In this embodiment, there are gas introduction ports 41 and 42 at the starting and ending sides of the moving path of the rotating cathode unit 8, and a bottom wall 10c near the center of the moving path of the rotating cathode unit 8. An exhaust port 5 is disposed in . Therefore, the pressure inside the chamber 10 is high at the start and end sides of the movement path of the rotating cathode unit 8, and low at the center, as shown in FIG. 2(A). It is a pressure distribution. The control unit 14 stores each positional information of the plurality of pressure sensors 7 . On the other hand, the positional information and the moving direction information within the chamber 10 of the rotating cathode unit 8 are detected by, for example, an encoder, and thereby the control unit 14 determines the positional information of the rotating cathode unit 8. Position information and movement direction information of the sputtering area A1 are acquired.

Based on this position information and movement direction information, pressure information at the movement position is provided by at least one pressure sensor 7 in the vicinity of the sputtering area A1 or in front of the movement direction among the plurality of pressure sensors 7. acquire. Based on this pressure information, the pressure in the chamber 10 is adjusted by the gas introduction means 16 and the gas exhaust means 15, which are pressure adjustment means. For example, when the position information of the rotating cathode unit 8 is located near one pressure sensor 7, one pressure sensor 7 is selected, and the pressure obtained from the selected pressure sensor 7 is Pressure adjustment is made based on the information. Additionally, at least two pressure sensors 7 can be selected, a pressure sensor 7 located nearby and a pressure sensor 7 located ahead in the direction of travel. In this way, the area in front of the moving direction is adjusted in advance, and in the film forming process, the pressure around the sputtering area A1 can be maintained at a pressure closer to the target value. The two front and rear pressure sensors 7 may proportionally distribute the pressure information from the selected pressure sensor 7, or only the pressure information from the front pressure sensor may be used. Additionally, three pressure sensors may be selected and pressure information from these pressure sensors may be acquired. The selection of the pressure sensor 7 is performed by the control unit 14, and in this embodiment, the control unit 14 is a means for selecting the pressure sensor 7.

Figure 2(B) schematically shows the control state. That is, P0(x) represents the pressure distribution in the initial state. The target pressure is called pt. For example, if the position of the rotating cathode unit 8 in the . In this embodiment, when the absolute value of this difference Δ1 is less than or equal to a predetermined value, the pressure is adjusted by the exhaust means 15, and when the absolute value is greater than the predetermined value, the pressure is adjusted by the exhaust means 15 and the gas introduction means 16. Adjust pressure. Regarding the adjustment amount of the exhaust means 15 and the gas introduction means 16, the relationship between the differential pressure and the adjustment amount is calculated in advance and stored in the control unit 14, and is controlled by the exhaust means 15 and the gas introduction means 16. A signal is output. In reality, there is a time difference from the instruction until the gas pressure reaches the target pressure pt, but in Fig. 2(B), if the time difference is ignored and explained, the pressure distribution changes from P0(x) to P1(x).

Additionally, at the point when the rotating cathode unit 8 has advanced to x2, if the pressure acquired by the pressure sensor 7 is P1(x2), the difference Δ2 with the target pressure pt is (P0(x2)-(pt)). , becomes negative, and the absolute value is smaller than the difference Δ1. When the absolute value of this difference Δ2 is less than a predetermined value, the pressure is adjusted by the exhaust means 15, and when the absolute value is greater than the predetermined value, the pressure is adjusted by the exhaust means 15 and the gas introduction means 16. For example, when there is a threshold value between the absolute values of difference Δ1 and difference Δ2, at the position x1, the adjustment is made by the exhaust means 15 and the gas introduction means 16, and at the position x2, the exhaust means 15 ) Adjust the pressure only. In this way, even if the pressure distribution of the gas pressure is uneven in the chamber, the pressure at the moving position of the rotating cathode 8 is detected and the difference with the target pressure is controlled to be zero, so that the rotating cathode unit 8 The pressure in the vicinity of the sputtering area A can be adjusted to be almost uniform, so that the film thickness and quality of the film formed on the film formation object 6 due to the pressure difference can be formed almost uniformly.

Next, another embodiment of the present invention will be described. In the following description, only the main differences from Embodiment 1 will be described, and the same components will be assigned the same reference numerals and description will be omitted.

[Embodiment 2]

FIG. 3A shows a film forming apparatus 102 according to Embodiment 2 of the present invention. In the film forming apparatus 102 according to Embodiment 2, a planar cathode unit 308 using a flat target 302 is used instead of a rotating cathode unit using a cylindrical target 302. The planar cathode unit 308 has a target 302 arranged in parallel with the film formation object, and a magnet unit 3, which is a magnetic field generating means, is arranged on the side of the target 302 opposite to the film formation object 6. . In addition, a backing plate 302a to which power is applied from the power source 13 is installed on the surface of the target 302 opposite to the film forming object 6, and is disposed before and after the moving direction of the case 306. It is inserted into the case plates 361 and 362 and is integrally fixed. The magnet unit 3 is fixed to the base plate 363.

The planar cathode unit 308 is fixed to the upper surface of the moving table 230, and in the film forming process, the planar cathode unit 308 moves toward the target 302 along a plane parallel to the film forming surface of the film forming object 6. ) moves in a direction perpendicular to the long longitudinal direction. The vicinity of the surface of the target 302 facing the film-forming object 6 is a sputtering area A1 where the electron density is increased by the magnetic field generated by the magnet unit 3. In the film forming process, along with the movement of the planar cathode unit 308, the sputtering area A1 moves along the film forming surface of the film forming object 6 to sequentially form a film on the film forming object 6. And, similarly to Embodiment 1, a plurality of pressure sensors 7 that acquire the pressure within the chamber 10 are arranged in plurality along the moving direction of the sputtering area A1. The arrangement and function of this pressure sensor 7 are the same as in Embodiment 1, and descriptions are omitted.

3(B) to 3D, even if the magnet unit 3 is allowed to move relative to the target 302 within the case 306 of the planar cathode unit 308, do. In this way, the sputtering area A1 can be set aside relative to the target 302, and the use efficiency of the target 302 can be increased.

[Embodiment 3]

FIG. 4 shows a film forming apparatus 104 related to Embodiment 3 of the present invention. In FIGS. 3B to 3D of the second embodiment, the magnet unit 3 within the planar cathode unit 308 was movable relative to the target 302. On the other hand, in this Embodiment 3, the flat target 402 is larger than the film-forming object 6 in both the X-axis direction and the Y-axis direction, and is fixedly installed with respect to the chamber 10. In addition, the magnet unit 3 as a magnetic field generating means moves with respect to the target 402 fixed to the chamber 10 (i.e., with respect to the chamber 10), and the target particles of the target 402 are emitted, resulting in sputtering. The area A1 is moved along the film forming object 6.

The target 402 is placed at the boundary between the vacuum area and the atmospheric area, and the magnet unit 3 is placed in the atmosphere outside the chamber 10. That is, as shown in FIG. 4A, the target 402 is arranged to airtightly block the opening 10c1 provided in the bottom wall 10c of the chamber 10, and the target 402 is positioned in the chamber 10. ) and faces the inner space of the tabernacle object 6. Here, a backing plate 402a to which power is applied from the power source 13 is installed on the surface of the target 402 opposite to the film forming object 6, and the backing plate 402a faces the external space. .

Then, the magnet unit 3 is disposed outside the chamber 10, and the pressure sensor 7 is disposed within the chamber 10. The magnet unit 3 is supported by a magnet unit moving device 430 outside the chamber 10 and is capable of moving in the X-axis direction along the target 402. The magnet unit 3 is driven by the magnet driving device 121 driving the magnet unit moving device 430. The magnet unit moving device 430 is a device that linearly guides the magnet unit 3 in the It is composed of etc. By moving this magnet unit 3, the sputtering area A1 moves in the X-axis direction. Similar to Embodiments 1 and 2, a plurality of pressure sensors 7 are arranged along the moving direction (X-axis direction) of the sputtering area A1. The magnet drive device 121 is controlled by the control device 14 and selects the pressure sensor 7 closest to the sputtering area A1 according to the position information of the magnet unit 3, and selects the pressure sensor 7 near the sputtering area. Obtain pressure information.

In this embodiment, the target 402 is disposed on the bottom wall 10c of the chamber 10, so the exhaust ports 51 and 52 are located on the front wall (side wall) of the chamber 10, as shown in FIG. 4B. ) (10e) and the rear wall (side wall) (10f). In addition, the sensor moving device 450 and the pressure sensor 7 are located on both sides of the longitudinal direction (Y-axis direction) of the magnet unit 3, that is, the front wall 10e of the chamber 10 and the rear wall 10f of the chamber. ) to detect the pressure on both sides of the magnet unit 3 in its longitudinal direction (Y-axis direction). The pressure is adjusted as the detected value, for example, as an average value. Of course, the pressure sensor 7 may be installed on either the front wall 10e or the rear wall 10f of the chamber 10.

[Other embodiments]

In addition, in the above embodiment, a case where there is one rotary cathode unit 8 or a single planar cathode unit is exemplified, but a film formation in which multiple rotary cathode units 8 or planar cathode units 308 are arranged inside the chamber 10 It can also be applied to devices. For example, in the case of the rotating cathode unit 8, it has a plurality of magnet units 3, and a plurality of targets 2 are arranged corresponding to each of these magnet units 3, and each magnet unit 3 and A plurality of sets of rotating cathode units 8, which are target units, are formed by each corresponding target 2, and a linear drive device 12 moves the plurality of sets of rotating cathode units 8 together. In addition, in the case of the planar cathode unit 308, it has a plurality of magnet units 3, and a plurality of targets 302 are arranged corresponding to each of these magnet units 3, and a plurality of targets 302 corresponding to each magnet unit 3 are provided. Each target 302 constitutes a plurality of planar cathode units 8, which are target units, and the linear drive device 12 moves the plurality of planar cathode units 8 together.

1: Tabernacle device
2, 302, 402: Target
6: Tabernacle objects
7: Pressure sensor
10: Chamber
12: Straight drive device (means of movement)
A1: Sputtering area

Claims (11)

A film forming apparatus having a chamber in which a film forming object and a target are placed, and depositing the sputtered particles on the film forming object to form a film while moving a sputtering area that generates sputtered particles from the target within the chamber,
A plurality of pressure sensors disposed within the chamber along a movement direction of the sputtering area and acquiring information on the pressure within the chamber;
pressure adjustment means for adjusting the pressure in the chamber based on information on the pressure acquired by at least one of the plurality of pressure sensors;
Having a selection means for selecting at least one pressure sensor used for adjusting the pressure by the pressure adjustment means from among the plurality of pressure sensors based on at least one of the position information of the sputtering region and the movement direction information of the sputtering region. A tabernacle device characterized by: According to paragraph 1,
The film forming apparatus, wherein the pressure adjustment means adjusts the pressure in the chamber so that a pressure based on pressure information acquired by a pressure sensor selected by the selection means becomes a target pressure. According to paragraph 1,
The film forming apparatus, wherein the selection means selects a pressure sensor located near the target from among the plurality of pressure sensors. According to paragraph 1,
The selection means selects at least two pressure sensors from among the plurality of pressure sensors, a pressure sensor located near the target and a pressure sensor located in front of the pressure sensor in the moving direction of the target. A tabernacle device. According to paragraph 1,
A film deposition apparatus characterized in that the sputtering area is moved by moving the target in a direction intersecting the longitudinal direction of the disposed target. According to paragraph 1,
The target is cylindrical, and the film forming apparatus further includes rotation means for rotating the target. According to paragraph 1,
A film forming device, wherein the target is flat. According to paragraph 1,
A plurality of the targets are arranged side by side in the chamber,
A film forming device characterized in that the plurality of arranged targets are moved together. According to paragraph 1,
The target has a flat plate shape extending in the direction of movement of the sputtering area,
The target is fixedly installed with respect to the chamber,
A film deposition apparatus characterized in that the sputtering area is moved by moving a magnetic field generating means with respect to the chamber. A film forming method comprising a sputter film forming process of placing a film forming object in a chamber and forming a film by depositing sputter particles flying from a target disposed opposite to the film forming object,
The sputter film formation process is a process of performing film formation while moving the sputtering area where sputter particles of the target are generated relative to the chamber,
In the sputter film deposition process, at least one of the plurality of pressure sensors disposed in the chamber along the movement direction of the sputtering area of the target is selected based on at least one of position information of the sputtering area and movement direction information of the sputtering area. A film forming method comprising a pressure adjustment step of acquiring information on the pressure within the chamber using a pressure sensor and adjusting the pressure within the chamber. A method of manufacturing an electronic device comprising a sputter film forming process of placing a film forming object in a chamber and forming a film by depositing sputter particles flying from a target disposed opposite to the film forming object,
The sputter film formation process is a process of forming a film while moving the sputtering area where sputter particles of the target are generated relative to the chamber,
In the sputter film deposition process, at least one of the plurality of pressure sensors disposed in the chamber along the movement direction of the sputtering area of the target is selected based on at least one of position information of the sputtering area and movement direction information of the sputtering area. A method of manufacturing an electronic device, comprising a pressure adjustment process of acquiring information on the pressure within the chamber using a pressure sensor and adjusting the pressure within the chamber.