JP3771882B2 - Metal film production apparatus and metal film production method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a metal film production apparatus and a metal film production method for producing a metal film on a surface of a substrate by a vapor deposition method.
[0002]
[Prior art]
Conventionally, when a metal film, for example, a copper thin film is produced by a vapor deposition method, for example, a liquid organic metal complex such as copper, hexafluoroacetylacetonate, trimethylvinylsilane, or the like is used as a raw material, and the solid raw material is It is dissolved in the gas and vaporized using a thermal reaction to form a film on the substrate.
[0003]
[Problems to be solved by the invention]
In the conventional technique, it is difficult to improve the film formation speed because the film is formed using a thermal reaction. In addition, the metal complex used as a raw material is expensive, and hexafluoroacetylacetonate and trimethylvinylsilane associated with copper remain as impurities in the copper thin film, making it difficult to improve the film quality. It was.
[0004]
The present invention has been made in view of the above situation, and an object of the present invention is to provide a metal film production apparatus that can produce a metal film that has a high film formation rate, can use inexpensive raw materials, and no impurities remain in the film. And
[0005]
In addition, the present invention has been made in view of the above situation, and provides a metal film manufacturing method capable of forming a metal film that has a high film forming speed, can use inexpensive raw materials, and no impurities remain in the film. With the goal.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a metal film manufacturing apparatus of the present invention includes a chamber in which a substrate is accommodated, a metal halide etching member provided in a chamber facing the substrate, a substrate, and an etching member. A rare gas supply means for supplying a rare gas into the chamber between the chamber, and plasma generation of the inside of the chamber to generate a rare gas plasma, and etching the member to be etched with the rare gas plasma, thereby forming a metal halide in the gas phase. Plasma generating means for generating a dissociated species and generating dissociated species of halogen and metal from the dissociated species by rare gas plasma, and lowering the temperature on the substrate side lower than the temperature on the member to be etched to dissociate the metal component of the dissociated species into the substrate And a temperature control means for film formation.
[0008]
In addition, the metal film manufacturing apparatus of the present invention for achieving the above object includes a cylindrical chamber in which a substrate is accommodated, and a metal halide to-be-etched member provided at an upper portion of the chamber at a position facing the substrate. A rare gas supply means for supplying a rare gas into the chamber, a coiled antenna member provided outside the cylindrical portion of the chamber for plasmaizing the inside of the chamber by power supply, and feeding the antenna member Thus, the inside of the chamber is turned into plasma to generate rare gas plasma, and the etched member is etched with the rare gas plasma to generate a metal halide separation species in the gas phase, and the rare gas plasma generates halogen and metal from the separation species. Generating means for generating dissociated species, and the metal component of the dissociated species by lowering the temperature on the substrate side lower than the temperature on the member to be etched Characterized in that a temperature control means for depositing on the substrate.
[0009]
In order to achieve the above object, the metal film manufacturing apparatus of the present invention includes a chamber in which a substrate is accommodated and an upper opening, a rare gas supply means for supplying a rare gas into the chamber, and an opening at the top of the chamber. A ceiling member made of an insulating material, an antenna member that is provided outside the ceiling member and converts the inside of the chamber into plasma by power feeding, and the substrate and the ceiling member in a discontinuous state with respect to the direction of electricity flow of the antenna member A plurality of metal halide to-be-etched members arranged between the antenna member and the antenna member to feed power to the substrate side of the to-be-etched member in the same direction as that of the antenna member. The inside of the chamber is turned into a plasma to generate a rare gas plasma, and the member to be etched is etched with the rare gas plasma. Plasma generation means for generating halogen and metal dissociated species from the released species by noble gas plasma, and forming the metal component of the dissociated species on the substrate by lowering the temperature on the substrate side than the temperature on the member to be etched And a temperature control means.
[0010]
In addition, the metal film production apparatus of the present invention for achieving the above object is a metal halide production apparatus comprising a chamber in which a substrate is accommodated and a rare gas component excited by plasma-induced excitation of a rare gas at a site separated from the chamber. Etching the member to be etched generates a metal halide dissociation species in the gas phase and generates a halogen and metal dissociation species from the dissociation species, and the temperature on the substrate side is higher than the temperature on the member to be etched side. And a temperature control means for forming a metal component of dissociated species on the substrate.
[0011]
The rare gas is argon.
[0012]
In addition, the metal film manufacturing apparatus of the present invention for achieving the above object includes a chamber in which a substrate is accommodated, a metal halide etching target provided in a chamber at a position facing the substrate, the substrate and the etching target. In the chamber between the parts halogen The source gas supply means for supplying the gas and the inside of the chamber is converted into plasma. halogen Generate plasma halogen Etching the material to be etched with plasma generates metal halide separation species in the gas phase. halogen Plasma generating means for generating dissociated species of halogen and metal from the dissociated species by plasma; and temperature control means for forming a metal component of the dissociated species on the substrate by lowering the temperature on the substrate side than the temperature on the member to be etched. It is provided with.
[0014]
In addition, the metal film manufacturing apparatus of the present invention for achieving the above object includes a cylindrical chamber in which a substrate is accommodated, and a metal halide to-be-etched member provided at an upper portion of the chamber at a position facing the substrate. And in the chamber halogen Source gas supply means, a coiled antenna member that is provided outside the cylindrical portion of the chamber and converts the inside of the chamber into plasma by feeding power, and the antenna member is turned into plasma by feeding power to the antenna member. The halogen Generate plasma halogen Etching the material to be etched with plasma generates metal halide separation species in the gas phase. halogen Plasma generating means for generating dissociated species of halogen and metal from the dissociated species by plasma; and temperature control means for forming a metal component of the dissociated species on the substrate by lowering the temperature on the substrate side than the temperature on the member to be etched. It is provided with.
[0015]
In order to achieve the above object, the metal film manufacturing apparatus of the present invention includes a chamber in which a substrate is accommodated and an upper opening, and a chamber in the chamber. halogen A source gas supply means for supplying a gas, an insulating ceiling member that seals the upper opening of the chamber, an antenna member that is provided outside the ceiling member and converts the inside of the chamber into plasma by feeding power, and an antenna member A plurality of metal halide etching target members arranged between the substrate and the ceiling member in a discontinuous state with respect to the direction of electricity flow, and feeding power to the antenna member to connect the antenna member to the substrate side of the etching target member. By creating an electric flow in the same direction as the electric flow direction, halogen Generate plasma halogen Etching the material to be etched with plasma generates metal halide separation species in the gas phase. halogen Plasma generating means for generating dissociated species of halogen and metal from the dissociated species by plasma; and temperature control means for forming a metal component of the dissociated species on the substrate by lowering the temperature on the substrate side than the temperature on the member to be etched. It is provided with.
[0016]
In addition, the metal film manufacturing apparatus of the present invention for achieving the above object includes a chamber in which a substrate is accommodated and a portion separated from the chamber. halogen Excited into plasma halogen Etching a metal halide to-be-etched member with a component generates a metal halide separation species in the gas phase and generates a halogen and metal dissociation species from the separation species, and a substrate side temperature. And temperature control means for lowering the temperature of the member to be etched to form a metal component of dissociated species on the substrate.
[0017]
And halogen The salt Plain It is characterized by being.
[0018]
Further, the member to be etched is made of copper chloride, so that CuCl is generated as a separation species and Cu and Cl are generated as dissociation species, and Cu is formed on the substrate.
[0019]
The metal component of the metal halide is a tantalum, tungsten or titanium which is a halide forming metal.
[0020]
In order to achieve the above object, the metal film manufacturing method of the present invention generates plasma of the inside of a chamber in which a substrate is accommodated to generate a rare gas plasma, and etches a metal halide etching target member with the rare gas plasma. To generate a metal halide dissociation species in the gas phase and to generate a dissociation species of halogen and metal from the dissociation species by a rare gas plasma so that the temperature on the substrate side is lower than the temperature on the member to be etched. A metal component of dissociated species is deposited on the substrate.
[0021]
The rare gas that generates the rare gas plasma is argon.
[0022]
In addition, the metal film manufacturing method of the present invention for achieving the above object is characterized in that a halogen gas plasma is generated by plasmaizing the inside of a chamber in which a substrate is accommodated, and the metal halide etching target member is generated by the halogen gas plasma. Etching is used to generate metal halide dissociation species in the gas phase, and halogen gas plasma generates halogen and metal dissociation species from the dissociation species, so that the temperature on the substrate side is lower than the temperature on the etched member side. Thus, a metal component of dissociated species is deposited on the substrate.
[0023]
The halogen that generates the halogen gas plasma is a salt. Plain It is characterized by being.
[0024]
In addition, by making the member to be etched made of copper chloride, CuCl is generated as a separation species and Cu and Cl are generated as dissociation species, Cu is formed on the substrate, and Cl is reacted with CuCl on the substrate to form Cl. ₂ It is characterized in that Cu is deposited on the substrate by discharging as.
[0025]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a metal film production apparatus and a metal film production method of the present invention will be described with reference to the drawings. The metal film production apparatus and the metal film production method of the present invention supply argon gas as a rare gas into a chamber in which a metal halide (CuCl) member to be etched is accommodated to generate argon gas plasma and generate argon gas. Etching the member to be etched with gas plasma generates CuCl desorption species, and argon gas plasma generates Cu and Cl dissociation species from the CuCl desorption species, and the substrate side temperature is set to the copper plate member side temperature. The Cu component of the dissociated species is formed on the substrate by lowering the thickness of the substrate, and the dissociated species Cl reacts with the dissociated species of CuCl. ₂ And Cu component is deposited on the substrate.
[0026]
Embodiments of a metal film production apparatus and a metal film production method according to the present invention will be described below with reference to the drawings.
[0027]
A metal film production apparatus and a metal film production method according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a schematic side view of a metal film production apparatus according to a first embodiment of the present invention, and FIG. 2 shows a conceptual situation of film formation.
[0028]
As shown in FIG. 1, for example, a support base 2 is provided in the vicinity of the bottom of a cylindrical chamber 1 formed in a cylindrical shape, and a substrate 3 is placed on the support base 2. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) ) Is controlled.
[0029]
The upper surface of the chamber 1 is an opening, and the opening is closed with a CuCl plate member 7 made of copper chloride (CuCl) as a member to be etched made of metal halide. The inside of the chamber 1 closed by the CuCl plate member 7 is maintained at a predetermined pressure by the vacuum device 8. A matching unit 9 and a power source 10 are connected to the CuCl plate member 7, and power is supplied to the CuCl plate member 7 (plasma generating means).
[0030]
An Ar gas nozzle 11 as a rare gas supply means for supplying argon (Ar) gas as a rare gas into the chamber 1 is connected to the cylindrical portion of the chamber 1 above the support 2. Ar gas is sent to the Ar gas nozzle 11 via the flow rate controller 12.
[0031]
As the halogen of the metal halide, fluorine (F), bromine (Br), iodine (I), or the like can be applied. As the metal halide, Ag, Au, Pt, Ta, Ti, W, etc. can be used as long as it is a halide-forming metal, preferably a chloride-forming metal. In this case, the thin film generated on the surface of the substrate 3 is Ag, Au, Pt, Ta, Ti, W, or the like. Further, as the rare gas, other rare gases such as helium, xenon, and krypton can be used.
[0032]
In the metal film forming apparatus described above, Ar gas is supplied into the chamber 1 from the Ar gas nozzle 11 and electromagnetic waves are incident on the interior of the chamber 1 from the CuCl plate member 7, whereby Ar gas is ionized and the Ar gas plasma 13. Occurs. Ar gas plasma 13 Ar ^* As a result, an etching reaction occurs in the CuCl plate member 7 and CuCl leaving species 14 are generated in the gas phase. Also, Ar gas plasma 13 Ar ^* As a result, the dissociated species 15 of Cu and Cl are generated from the detached species 14. At this time, the CuCl plate member 7 is maintained at a temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by a temperature control means (not shown).
[0033]
The detached species 14 and the dissociated species 15 generated inside the chamber 1 are conveyed to the substrate 3 controlled to a temperature lower than that of the CuCl plate member 7. As shown in FIG. 2, the Cu component of the dissociated species 15 is formed on the substrate 3, and CuCl of the dissociated species 14 reacts with Cl of the dissociated species 15 to form Cl ₂ Is released and a Cu component is deposited on the substrate 3. Thereby, a Cu thin film 16 is generated on the surface of the substrate 3.
[0034]
The reaction situation at this time is
CuCl (s): CuCl plate member 7 is Ar ^* To CuCl (g).
CuCl (g) is Ar ^* To Cu, Cl.
at the same time,
CuCl (g) is Ar ^* To CuCl (ad).
[0035]
As shown in FIG. 2, Cu of dissociated species 15 is deposited on the substrate 3, and CuCl (ad) and Cl of dissociated species 15 react to form Cl. ₂ Is released (direct reduction reaction) and precipitates as metal (Cu). Gases and etching products not involved in the reaction are exhausted from the exhaust port 17.
[0036]
Since the metal film production apparatus described above uses Ar gas plasma 13 to produce the leaving species 14 and the dissociated species 15 by the etching reaction and produces the Cu thin film 16 by the direct reduction reaction, the reaction efficiency is greatly improved. As a result, the film formation speed increases. Moreover, since the substrate 3 is controlled to a temperature lower than that of the CuCl plate member 7 by using the temperature control means 6, it is possible to reduce the residue of impurities such as chlorine in the Cu thin film 16, and to produce a high quality Cu thin film. 16 can be generated.
[0037]
Furthermore, since the CuCl plate member 7 itself is applied as an electrode for plasma generation, a member such as a plasma antenna is not required around the cylindrical portion of the chamber 1, and the degree of freedom of the surrounding configuration can be increased.
[0038]
Further, since no source gas for carrying out the reduction reaction is required, ancillary equipment for the source gas becomes unnecessary, and the equipment cost can be greatly reduced. Moreover, since the Cu thin film 16 can be produced simply by using the inexpensive CuCl plate member 7 and Ar gas, the running cost can be greatly reduced.
[0039]
A second embodiment of the metal film production apparatus and metal film production method of the present invention will be described with reference to FIG. FIG. 3 shows a schematic side view of a metal film manufacturing apparatus according to the second embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the same member as the member shown in FIG. 1, and the overlapping description is abbreviate | omitted.
[0040]
As shown in FIG. 3, for example, a support base 2 is provided in the vicinity of the bottom of a cylindrical chamber 1 formed in a cylindrical shape, and a substrate 3 is placed on the support base 2. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) ) Is controlled.
[0041]
The upper surface of the chamber 1 is an opening, and the opening is closed with a CuCl plate member 7 made of copper chloride (CuCl) as a member to be etched made of metal halide. The inside of the chamber 1 closed by the CuCl plate member 7 is maintained at a predetermined pressure by the vacuum device 8. A coiled plasma antenna 21 serving as an antenna member is provided around the cylindrical portion of the chamber 1, and a matching unit 9 and a power source 10 are connected to the plasma antenna 21 to supply power (plasma generating means).
[0042]
An Ar gas nozzle 11 as a rare gas supply means for supplying argon (Ar) gas as a rare gas into the chamber 1 is connected to the cylindrical portion of the chamber 1 above the support 2. Ar gas is sent to the Ar gas nozzle 11 via the flow rate controller 12.
[0043]
In the metal film forming apparatus described above, Ar gas is supplied into the chamber 1 from the Ar gas nozzle 11 and electromagnetic waves are incident from the plasma antenna 21 into the chamber 1, whereby the Ar gas is ionized and the Ar gas plasma 13 is generated. appear. Ar gas plasma 13 Ar ^* As a result, an etching reaction occurs in the CuCl plate member 7 and CuCl leaving species 14 are generated in the gas phase. Also, Ar gas plasma 13 Ar ^* As a result, the dissociated species 15 of Cu and Cl are generated from the detached species 14. At this time, the CuCl plate member 7 is maintained at a temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by a temperature control means (not shown).
[0044]
The detached species 14 and the dissociated species 15 generated inside the chamber 1 are conveyed to the substrate 3 controlled to a temperature lower than that of the CuCl plate member 7. The Cu component of the dissociated species 15 is formed on the substrate 3, and the CuCl of the dissociated species 14 reacts with Cl of the dissociated species 15 to form Cl. ₂ Is released and a Cu component is deposited on the substrate 3. Thereby, a Cu thin film 16 is generated on the surface of the substrate 3.
[0045]
Since the metal film production apparatus described above uses Ar gas plasma 13 to produce the leaving species 14 and the dissociated species 15 by the etching reaction and produces the Cu thin film 16 by the direct reduction reaction, the reaction efficiency is greatly improved. As a result, the film formation speed increases. Moreover, since the substrate 3 is controlled to a temperature lower than that of the CuCl plate member 7 by using the temperature control means 6, it is possible to reduce the residue of impurities such as chlorine in the Cu thin film 16, and to produce a high quality Cu thin film. 16 can be generated.
[0046]
Further, since no source gas for carrying out the reduction reaction is required, ancillary equipment for the source gas becomes unnecessary, and the equipment cost can be greatly reduced. Moreover, since the Cu thin film 16 can be produced simply by using the inexpensive CuCl plate member 7 and Ar gas, the running cost can be greatly reduced.
[0047]
Furthermore, since the coiled plasma antenna 21 is provided outside the cylindrical portion of the chamber 1, the Cu thin film 16 can be generated even with the large chamber 1, that is, with respect to the large substrate 3.
[0048]
A third embodiment of the metal film production apparatus and the metal film production method of the present invention will be described with reference to FIGS. 4 is a schematic side view of a metal film production apparatus for performing the metal film production method according to the third embodiment of the present invention, FIG. 5 is a view taken along the line XX in FIG. 4, and FIG. VI-VI line arrow view is shown. In addition, the same code | symbol is attached | subjected to the same member as the member shown in FIG. 1, and the overlapping description is abbreviate | omitted.
[0049]
As shown in the figure, a support base 2 is provided in the vicinity of the bottom of a chamber 1 made of, for example, ceramic, and a substrate 3 is placed on the support base 2. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) by the temperature control means 6. ) To be controlled.
[0050]
The upper surface of the chamber 1 is an opening, and the opening is closed by a ceiling plate 22 made of an insulating material (for example, ceramic). The interior of the chamber 1 closed by the ceiling plate 22 is maintained at a predetermined pressure by the vacuum device 8. An Ar gas nozzle 11 as a rare gas supply means for supplying argon (Ar) gas as a rare gas into the chamber 1 is connected to the cylindrical portion of the chamber 1 above the support 2. Ar gas is sent to the Ar gas nozzle 11 via the flow rate controller 12.
[0051]
It should be noted that by providing a plurality of nozzles 11 in the circumferential direction, changing the opening direction of the Ar gas nozzle 11 to two or more in the circumferential direction, and using different Ar gas nozzles 11 with different opening directions, the supply status of Ar gas ( It is possible to control the plasma generation state). The Ar gas nozzle 11 may be provided in the horizontal direction above the chamber 1 or in two stages above and below the chamber 1 and is not limited to the state shown in the drawing.
[0052]
A member to be etched 23 made of copper chloride (CuCl) is sandwiched between the opening on the upper surface of the chamber 1 and the ceiling plate 22. As shown in FIGS. 4 and 5, the member to be etched 23 is provided with a ring portion 24 sandwiched by an opening on the upper surface of the chamber 1, and the radial center portion of the chamber 1 is provided on the inner peripheral side of the ring portion 24. A plurality (12 in the illustrated example) of protrusions 25 extending to the vicinity and having the same width are provided in the circumferential direction.
[0053]
The protruding portion 25 is attached to the ring portion 24 integrally or detachably. Between the ceiling plate 22 and the interior of the chamber 1, there is a notch 26 (space) formed between the protrusions 25. The ring portion 24 is grounded, and the plurality of protrusions 25 are electrically connected and maintained at the same potential (same potential maintaining means).
[0054]
In addition, it is also possible to arrange | position the 2nd projection part shorter than the projection part 25 in the radial direction between the projection parts 25, and also arrange | position a short projection part between the projection part 25 and the 2nd projection part. It is also possible. If it does in this way, the area of CuCl used as an etching object can be secured, suppressing an induction current.
[0055]
Above the ceiling plate 22 is provided a plasma antenna 27 (plasma generating means) as an antenna member for converting the inside of the chamber 1 into plasma, and the plasma antenna 27 is formed in a planar ring shape parallel to the surface of the ceiling plate 22. Has been. A matching unit 9 and a power source 10 are connected to the plasma antenna 22 to supply power.
[0056]
In the member to be etched 23, a plurality of protrusions 25 are provided in the circumferential direction on the inner peripheral side of the ring part 24, and there are notches 26 (spaces) formed between the protrusions 25. 27 is a state in which the protrusion 25 is disposed between the substrate 3 and the ceiling member in a discontinuous state with respect to the direction of electricity flow 27.
[0057]
In the metal film manufacturing apparatus described above, Ar gas is supplied into the chamber 1 from the Ar gas nozzle 11 and electromagnetic waves are incident from the plasma antenna 27 into the chamber 1, whereby the Ar gas is ionized and the Ar gas plasma 13 is generated. appear. A member 23 to be etched, which is a conductor, exists below the plasma antenna 27. Ar gas plasma is formed between the member 23 to be etched and the substrate 3 by the following action, that is, below the member 23 to be etched. 13 is generated stably.
[0058]
An operation of generating Ar gas plasma 13 on the lower side of the member to be etched 23 will be described. As shown in FIG. 6, the electric flow A of the planar ring-shaped plasma antenna 27 is in a direction across the protrusion 25, and at this time, an induced current b is generated on the surface of the protrusion 25 facing the plasma antenna 27. . Since the notched portion 26 (space) exists in the member 23 to be etched, the induced current b flows to the lower surface of each protrusion 25 and flows in the same direction as the electric current A of the plasma antenna 27. Flow a (Faraday shield).
[0059]
For this reason, when the member 23 to be etched is viewed from the substrate 3 side, there is no flow in the direction to cancel the electric flow A of the plasma antenna 27, and the ring portion 24 is grounded and the protrusion 25 is the same. It is maintained at a potential. As a result, even if the member to be etched 23 that is a conductor exists, the electromagnetic wave is reliably incident on the chamber 1 from the plasma antenna 27, and the Ar gas plasma 13 is stably generated below the member to be etched 23. It is supposed to be.
[0060]
Ar gas plasma 13 Ar ^* As a result, an etching reaction occurs in the CuCl plate member 7 and CuCl leaving species 14 are generated in the gas phase. Also, Ar gas plasma 13 Ar ^* As a result, the dissociated species 15 of Cu and Cl are generated from the detached species 14. At this time, the CuCl plate member 7 is maintained at a temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by a temperature control means (not shown).
[0061]
The detached species 14 and the dissociated species 15 generated inside the chamber 1 are conveyed to the substrate 3 controlled to a temperature lower than that of the CuCl plate member 7. The Cu component of the dissociated species 15 is formed on the substrate 3, and the CuCl of the dissociated species 14 reacts with Cl of the dissociated species 15 to form Cl. ₂ Is released and a Cu component is deposited on the substrate 3. Thereby, a Cu thin film 16 is generated on the surface of the substrate 3.
[0062]
Since the metal film production apparatus described above uses Ar gas plasma 13 to produce the leaving species 14 and the dissociated species 15 by the etching reaction and produces the Cu thin film 16 by the direct reduction reaction, the reaction efficiency is greatly improved. As a result, the film formation speed increases. Further, since the temperature of the substrate 3 is controlled to be lower than that of the member 23 to be etched by using the temperature control means 6, the residue of impurities such as chlorine in the Cu thin film 16 can be reduced, and a high quality Cu thin film can be obtained. 16 can be generated.
[0063]
In addition, since the member to be etched 23 includes a plurality of protrusions 25 in the circumferential direction on the inner peripheral side of the ring part 24, and there are notches 26 (spaces) formed between the protrusions 25. The induced current generated in the member to be etched 23 flows in the same direction as the flow of electricity in the plasma antenna 27 when viewed from the substrate 3 side. As a result, even if the member 23 to be etched, which is a conductor, exists under the plasma antenna 27, the electromagnetic wave reliably enters the chamber 1 from the plasma antenna 27, and Ar gas plasma is formed below the member 23 to be etched. 13 can be generated stably.
[0064]
Further, since no source gas for carrying out the reduction reaction is required, ancillary equipment for the source gas becomes unnecessary, and the equipment cost can be greatly reduced. Moreover, since the Cu thin film 16 can be produced simply by using the inexpensive member to be etched 23 made of CuCl and Ar gas, the running cost can be greatly reduced.
[0065]
A fourth embodiment of the metal film production apparatus and metal film production method of the present invention will be described based on FIG. FIG. 7 shows a schematic side view of a metal film production apparatus for performing the metal film production method according to the fourth embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the same member as the member shown in FIG. 1, and the overlapping description is abbreviate | omitted.
[0066]
As shown in the figure, a support base 2 is provided in the vicinity of the bottom of a chamber 1 made of, for example, ceramic, and a substrate 3 is placed on the support base 2. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) by the temperature control means 6. ) To be controlled.
[0067]
The upper surface of the chamber 1 is an opening, and the opening is closed by, for example, a ceiling plate 31 made of ceramics (made of an insulating material). A to-be-etched member 32 made of copper chloride (made by CuCl) is provided on the lower surface of the ceiling plate 31, and the to-be-etched member 32 has a quadrangular pyramid shape. A slit-shaped opening 33 is formed around the cylindrical portion of the chamber 1, and one end of the cylindrical passage 34 is fixed to the opening 33.
[0068]
A cylindrical excitation chamber 35 made of an insulator is provided in the middle of the passage 34, and a coiled plasma antenna 36 is provided around the excitation chamber 35. The plasma antenna 36 is connected to the matching unit 9 and the power supply 10. Then, power is supplied. The flow rate controller 12 is connected to the other end side of the passage 34, and Ar gas is supplied into the passage 34 via the flow rate controller 12.
[0069]
When electromagnetic waves are incident on the inside of the excitation chamber 35 from the plasma antenna 36, the Ar gas is ionized and the Ar gas plasma 13 is generated (generation means). That is, Ar gas is excited in the excitation chamber 35 isolated from the chamber 1. Due to the generation of the Ar gas plasma 13, excited Ar is sent into the chamber 1 from the opening 33, and the member to be etched 32 is etched by the excited Ar.
[0070]
Etching of the member 32 to be etched generates CuCl leaving species 14 in the gas phase. Further, Cu and Cl dissociated species 15 are generated from the leaving species 14 by excited Ar. At this time, the member to be etched 32 is maintained at a temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by temperature control means such as a heater 37.
[0071]
The detached species 14 and the dissociated species 15 generated inside the chamber 1 are conveyed to the substrate 3 controlled to a temperature lower than that of the member to be etched 32. The Cu component of the dissociated species 15 is formed on the substrate 3, and the CuCl of the dissociated species 14 reacts with Cl of the dissociated species 15 to form Cl. ₂ Is released and a Cu component is deposited on the substrate 3. Thereby, a Cu thin film 16 is generated on the surface of the substrate 3.
[0072]
The above-described metal film manufacturing apparatus generates the leaving species 14 and the dissociated species 15 by the etching reaction using excited Ar, and the Cu thin film 16 by the direct reduction reaction, so that the reaction efficiency is greatly improved. The film speed increases. Further, since the temperature of the substrate 3 is controlled to be lower than that of the member to be etched 32 by using the temperature control means 6, it is possible to reduce the residue of impurities such as chlorine in the Cu thin film 16, and a high quality Cu thin film. 16 can be generated.
[0073]
Further, since no source gas for carrying out the reduction reaction is required, ancillary equipment for the source gas becomes unnecessary, and the equipment cost can be greatly reduced. Moreover, since the Cu thin film 16 can be produced simply by using the inexpensive member to be etched 32 made of CuCl and Ar gas, the running cost can be greatly reduced.
[0074]
Furthermore, since the Ar gas plasma 13 is generated in the excitation chamber 35 isolated from the chamber 1, the substrate 3 is not exposed to the plasma, and the substrate 3 is not damaged by the plasma. For example, in the substrate 3 on which a film of another material is formed in the previous process, the material film formed in the previous process is not damaged.
[0075]
As a means (excitation means) for generating the Ar gas plasma 13 in the excitation chamber 33, it is also possible to use a microwave, a laser, an electron beam, radiation light, or the like.
[0076]
Next, another embodiment of the metal film production apparatus and metal film production method of the present invention will be described. In another embodiment of the metal film production apparatus and metal film production method, a chlorine gas as a source gas containing halogen is contained in a chamber in which a metal halide (CuCl) member to be etched is accommodated. CuCl release species are generated by generating chlorine gas plasma and etching the member to be etched with chlorine gas plasma, and further generating CuCl from the CuCl release species by chlorine gas plasma. And dissociated species of Cl, and by making the temperature on the substrate side lower than the temperature on the copper plate member side, the Cu component of the dissociated species is formed on the substrate, and the dissociated species of Cl reacts with the dissociated species of CuCl. Cl ₂ And Cu component is deposited on the substrate.
[0077]
Hereinafter, other embodiments of the metal film production apparatus and the metal film production method of the present invention will be described with reference to the drawings.
[0078]
A fifth embodiment of the metal film manufacturing apparatus and the metal film manufacturing method of the present invention will be described with reference to FIGS. FIG. 8 shows a schematic side view of a metal film production apparatus according to the fifth embodiment of the present invention, and FIG. 9 shows a conceptual situation of film formation. The present embodiment corresponds to the first embodiment shown in FIGS. 1 and 2, and the same members as those shown in FIGS. 1 and 2 are denoted by the same reference numerals.
[0079]
As shown in FIG. 8, for example, a support base 2 is provided in the vicinity of the bottom of a cylindrical chamber 1 formed in a cylindrical shape, and a substrate 3 is placed on the support base 2. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) ) Is controlled.
[0080]
The upper surface of the chamber 1 is an opening, and the opening is closed with a CuCl plate member 7 made of copper chloride (CuCl) as a member to be etched made of metal halide. The inside of the chamber 1 closed by the CuCl plate member 7 is maintained at a predetermined pressure by the vacuum device 8. A matching unit 9 and a power source 10 are connected to the CuCl plate member 7, and power is supplied to the CuCl plate member 7 (plasma generating means).
[0081]
The cylindrical portion of the chamber 1 above the support base 2 has Cl as halogen inside the chamber 1. ₂ Containing source gas (Cl ₂ Gas: Cl diluted with He, Ar, etc. to a chlorine concentration of ≦ 50%, preferably about 10% ₂ Cl as source gas supply means for supplying gas) ₂ A gas nozzle 41 is connected. Cl ₂ The gas nozzle 41 is supplied with Cl through a flow rate controller 42. ₂ Gas is sent.
[0082]
As the halogen of the metal halide, fluorine (F), bromine (Br), iodine (I), or the like can be applied. As the metal halide, Ag, Au, Pt, Ta, Ti, W, etc. can be used as long as it is a halide-forming metal, preferably a chloride-forming metal. In this case, the thin film generated on the surface of the substrate 3 is Ag, Au, Pt, Ta, Ti, W, or the like. Further, as the rare gas, other rare gases such as helium, xenon, and krypton can be used.
[0083]
In the above-described metal film forming apparatus, Cl 1 is contained in the chamber 1. ₂ Cl from the gas nozzle 41 ₂ By supplying gas and making electromagnetic waves enter the chamber 1 from the CuCl plate member 7, Cl ₂ The gas is ionized and Cl ₂ A gas plasma 43 is generated. Cl ₂ Cl of gas plasma 43 ^* As a result, an etching reaction occurs in the CuCl plate member 7 and CuCl leaving species 14 are generated in the gas phase. Also, Cl ₂ Cl of gas plasma 43 ^* As a result, the dissociated species 15 of Cu and Cl are generated from the detached species 14. At this time, the CuCl plate member 7 is maintained at a temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by a temperature control means (not shown).
[0084]
The detached species 14 and the dissociated species 15 generated inside the chamber 1 are conveyed to the substrate 3 controlled to a temperature lower than that of the CuCl plate member 7. As shown in FIG. 2, the Cu component of the dissociated species 15 is formed on the substrate 3, and CuCl of the dissociated species 14 reacts with Cl of the dissociated species 15 to form Cl ₂ Is released and a Cu component is deposited on the substrate 3. Thereby, a Cu thin film 16 is generated on the surface of the substrate 3.
[0085]
The reaction situation at this time is
CuCl (s): CuCl plate member 7 is Cl ^* To CuCl (g).
CuCl (g) is Cl ^* To Cu, Cl.
at the same time,
CuCl (g) is Cl ^* To CuCl (ad).
[0086]
As shown in FIG. 9, Cu of dissociated species 15 is formed on the substrate 3, and CuCl (ad) and Cl of dissociated species 15 react to form Cl. ₂ Is released (direct reduction reaction) and precipitates as metal (Cu). Gases and etching products not involved in the reaction are exhausted from the exhaust port 17.
[0087]
The metal film production apparatus described above is Cl ₂ Since the separation species 14 and the dissociation species 15 are generated by the etching reaction using the gas plasma 43 and the Cu thin film 16 is produced by the direct reduction reaction, the reaction efficiency is greatly improved and the film formation rate is increased. In addition, it is Cl to CuCl (ad) ^* Since the Cu thin film 16 is produced by a part of the reaction, the film forming speed is further increased. Moreover, since the substrate 3 is controlled to a temperature lower than that of the CuCl plate member 7 by using the temperature control means 6, it is possible to reduce the residue of impurities such as chlorine in the Cu thin film 16, and to produce a high quality Cu thin film. 16 can be generated.
[0088]
Furthermore, since the CuCl plate member 7 itself is applied as an electrode for plasma generation, a member such as a plasma antenna is not required around the cylindrical portion of the chamber 1, and the degree of freedom of the surrounding configuration can be increased.
[0089]
And cheap Cl as source gas ₂ Since the Cu thin film 16 can be produced simply by using gas and using an inexpensive CuCl plate member 7, the running cost can be greatly reduced.
[0090]
A sixth embodiment of the metal film production apparatus and metal film production method of the present invention will be described with reference to FIG. FIG. 10 shows a schematic side view of a metal film manufacturing apparatus according to the sixth embodiment of the present invention. This embodiment corresponds to the second embodiment shown in FIG. 3, and the same members as those shown in FIG. 3 are denoted by the same reference numerals. Further, the same members as those shown in FIG.
[0091]
As shown in FIG. 3, for example, a support base 2 is provided in the vicinity of the bottom of a cylindrical chamber 1 formed in a cylindrical shape, and a substrate 3 is placed on the support base 2. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) ) Is controlled.
[0092]
The upper surface of the chamber 1 is an opening, and the opening is closed with a CuCl plate member 7 made of copper chloride (CuCl) as a member to be etched made of metal halide. The inside of the chamber 1 closed by the CuCl plate member 7 is maintained at a predetermined pressure by the vacuum device 8. A coiled plasma antenna 21 serving as an antenna member is provided around the cylindrical portion of the chamber 1, and a matching unit 9 and a power source 10 are connected to the plasma antenna 21 to supply power (plasma generating means).
[0093]
The cylindrical portion of the chamber 1 above the support base 2 has Cl as halogen inside the chamber 1. ₂ Containing source gas (Cl ₂ Gas: Cl diluted with He, Ar, etc. to a chlorine concentration of ≦ 50%, preferably about 10% ₂ Cl as source gas supply means for supplying gas) ₂ A gas nozzle 41 is connected. Cl ₂ The gas nozzle 41 is supplied with Cl through a flow rate controller 42. ₂ Gas is sent.
[0094]
In the above-described metal film forming apparatus, Cl 1 is contained in the chamber 1. ₂ Cl from the gas nozzle 41 ₂ By supplying gas and making electromagnetic waves enter the chamber 1 from the plasma antenna 21, Cl ₂ The gas is ionized and Cl ₂ A gas plasma 43 is generated. Cl ₂ Cl of gas plasma 43 ^* As a result, an etching reaction occurs in the CuCl plate member 7 and CuCl leaving species 14 are generated in the gas phase. Also, Cl ₂ Cl of gas plasma 43 ^* As a result, the dissociated species 15 of Cu and Cl are generated from the detached species 14. At this time, the CuCl plate member 7 is maintained at a temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by a temperature control means (not shown).
[0095]
The detached species 14 and the dissociated species 15 generated inside the chamber 1 are conveyed to the substrate 3 controlled to a temperature lower than that of the CuCl plate member 7. The Cu component of the dissociated species 15 is formed on the substrate 3, and the CuCl of the dissociated species 14 reacts with Cl of the dissociated species 15 to form Cl. ₂ Is released and a Cu component is deposited on the substrate 3. Thereby, a Cu thin film 16 is generated on the surface of the substrate 3.
[0096]
The metal film production apparatus described above is Cl ₂ Since the separation species 14 and the dissociation species 15 are generated by the etching reaction using the gas plasma 43 and the Cu thin film 16 is produced by the direct reduction reaction, the reaction efficiency is greatly improved and the film formation rate is increased. In addition, it is Cl to CuCl (ad) ^* Since the Cu thin film 16 is produced by a part of the reaction, the film forming speed is further increased. Moreover, since the substrate 3 is controlled to a temperature lower than that of the CuCl plate member 7 by using the temperature control means 6, it is possible to reduce the residue of impurities such as chlorine in the Cu thin film 16, and to produce a high quality Cu thin film. 16 can be generated.
[0097]
And cheap Cl as source gas ₂ Since the Cu thin film 16 can be produced simply by using gas and using an inexpensive CuCl plate member 7, the running cost can be greatly reduced.
[0098]
Furthermore, since the coiled plasma antenna 21 is provided outside the cylindrical portion of the chamber 1, the Cu thin film 16 can be generated even with the large chamber 1, that is, with respect to the large substrate 3.
[0099]
A seventh embodiment of the metal film production apparatus and the metal film production method of the present invention will be described based on FIG. FIG. 11 shows a schematic side view of a metal film production apparatus for performing the metal film production method according to the seventh embodiment of the present invention. The present embodiment corresponds to the third embodiment shown in FIGS. 4 to 6, and the same members as those shown in FIGS. 4 to 6 are denoted by the same reference numerals. Further, the same members as those shown in FIGS. 8 to 10 are denoted by the same reference numerals, and redundant description is omitted.
[0100]
As shown in the figure, a support base 2 is provided in the vicinity of the bottom of a chamber 1 made of, for example, ceramic, and a substrate 3 is placed on the support base 2. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) by the temperature control means 6. ) To be controlled.
[0101]
The upper surface of the chamber 1 is an opening, and the opening is closed by a ceiling plate 22 made of an insulating material (for example, ceramic). The interior of the chamber 1 closed by the ceiling plate 22 is maintained at a predetermined pressure by the vacuum device 8.
[0102]
The cylindrical portion of the chamber 1 above the support base 2 has Cl as halogen inside the chamber 1. ₂ Containing source gas (Cl ₂ Gas: Cl diluted with He, Ar, etc. to a chlorine concentration of ≦ 50%, preferably about 10% ₂ Cl as source gas supply means for supplying gas) ₂ A gas nozzle 41 is connected. Cl ₂ The gas nozzle 41 is supplied with Cl through a flow rate controller 42. ₂ Gas is sent.
[0103]
In addition, Cl ₂ A plurality of gas nozzles 41 are provided in the circumferential direction, and Cl is provided in the circumferential direction. ₂ The opening direction of the gas nozzle 41 is changed to two or more directions and is provided with different opening directions. ₂ By using different gas nozzles 41, Cl ₂ It is possible to control the gas supply status (plasma generation status). Also, Cl ₂ The place where the gas nozzle 41 is provided can be provided horizontally in the upper part of the chamber 1 or can be provided in two stages above and below the chamber 1, and is not limited to the state of the illustrated example.
[0104]
A member to be etched 23 made of copper chloride (CuCl) is sandwiched between the opening on the upper surface of the chamber 1 and the ceiling plate 22. The member to be etched 23 is provided with a ring portion 24 that is sandwiched by the opening on the upper surface of the chamber 1, and a protrusion that extends to the vicinity of the central portion in the radial direction of the chamber 1 on the inner peripheral side of the ring portion 24. A plurality of portions 25 are provided in the circumferential direction (same as shown in FIGS. 4 and 5).
[0105]
The protruding portion 25 is attached to the ring portion 24 integrally or detachably. Between the ceiling plate 22 and the inside of the chamber 1, there is a notch 26 (space) formed between the protrusions 25 (see FIG. 5). The ring portion 24 is grounded, and the plurality of protrusions 25 are electrically connected and maintained at the same potential (same potential maintaining means).
[0106]
In addition, it is also possible to arrange | position the 2nd projection part shorter than the projection part 25 in the radial direction between the projection parts 25, and also arrange | position a short projection part between the projection part 25 and the 2nd projection part. It is also possible. If it does in this way, the area of CuCl used as an etching object can be secured, suppressing an induction current.
[0107]
Above the ceiling plate 22 is provided a plasma antenna 27 (plasma generating means) as an antenna member for converting the inside of the chamber 1 into plasma, and the plasma antenna 27 is formed in a planar ring shape parallel to the surface of the ceiling plate 22. Has been. A matching unit 9 and a power source 10 are connected to the plasma antenna 22 to supply power.
[0108]
In the member 23 to be etched, a plurality of protrusions 25 are provided in the circumferential direction on the inner peripheral side of the ring part 24, and there are notches 26 (spaces) formed between the protrusions 25 (FIG. 5). The projection 25 is disposed between the substrate 3 and the ceiling member in a discontinuous state with respect to the electric flow direction of the plasma antenna 27.
[0109]
In the above-described metal film manufacturing apparatus, Cl 1 is placed inside the chamber 1. ₂ Cl from the gas nozzle 41 ₂ By supplying gas and making electromagnetic waves enter the chamber 1 from the plasma antenna 27, Cl ₂ The gas is ionized and Cl ₂ A gas plasma 43 is generated. A member to be etched 23, which is a conductor, exists below the plasma antenna 27. By the action described in the third embodiment (see FIG. 6), between the member to be etched 23 and the substrate 3, That is, the Cl ₂ The gas plasma 43 is generated stably.
[0110]
Cl ₂ Cl of gas plasma 43 ^* As a result, an etching reaction occurs in the CuCl plate member 7 and CuCl leaving species 14 are generated in the gas phase. Also, Cl ₂ Cl of gas plasma 43 ^* As a result, the dissociated species 15 of Cu and Cl are generated from the detached species 14. At this time, the CuCl plate member 7 is maintained at a temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by a temperature control means (not shown).
[0111]
The detached species 14 and the dissociated species 15 generated inside the chamber 1 are conveyed to the substrate 3 controlled to a temperature lower than that of the CuCl plate member 7. The Cu component of the dissociated species 15 is formed on the substrate 3, and the CuCl of the dissociated species 14 reacts with Cl of the dissociated species 15 to form Cl. ₂ Is released and a Cu component is deposited on the substrate 3. Thereby, a Cu thin film 16 is generated on the surface of the substrate 3.
[0112]
The metal film production apparatus described above is Cl ₂ Since the separation species 14 and the dissociation species 15 are generated by the etching reaction using the gas plasma 43 and the Cu thin film 16 is produced by the direct reduction reaction, the reaction efficiency is greatly improved and the film formation rate is increased. In addition, it is Cl to CuCl (ad) ^* Since the Cu thin film 16 is produced by a part of the reaction, the film forming speed is further increased. Further, since the temperature of the substrate 3 is controlled to be lower than that of the member 23 to be etched by using the temperature control means 6, the residue of impurities such as chlorine in the Cu thin film 16 can be reduced, and a high quality Cu thin film can be obtained. 16 can be generated.
[0113]
Further, since the member to be etched 23 has a plurality of protrusions 25 in the circumferential direction on the inner peripheral side of the ring part 24 and a notch 26 (space) formed between the protrusions 25 exists ( 5), the induced current generated in the member to be etched 23 flows in the same direction as the electric flow of the plasma antenna 27 when viewed from the substrate 3 side. As a result, even if the member 23 to be etched, which is a conductor, exists under the plasma antenna 27, the electromagnetic wave is reliably incident from the plasma antenna 27 into the chamber 1, and the Cl ₂ It becomes possible to generate the gas plasma 43 stably.
[0114]
And cheap Cl as source gas ₂ Since the Cu thin film 16 can be produced simply by using gas and using an inexpensive member 23 made of CuCl, the running cost can be greatly reduced.
[0115]
An eighth embodiment of the metal film production apparatus and metal film production method of the present invention will be described with reference to FIG. FIG. 12 shows a schematic side view of a metal film production apparatus for performing the metal film production method according to the eighth embodiment of the present invention. This embodiment corresponds to the fourth embodiment shown in FIG. 7, and the same members as those shown in FIG. Further, the same members as those shown in FIGS. 8 to 11 are denoted by the same reference numerals, and redundant description is omitted.
[0116]
As shown in the figure, a support base 2 is provided in the vicinity of the bottom of a chamber 1 made of, for example, ceramic, and a substrate 3 is placed on the support base 2. The support base 2 is provided with a temperature control means 6 including a heater 4 and a refrigerant flow means 5, and the support base 2 is set to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) by the temperature control means 6. ) To be controlled.
[0117]
The upper surface of the chamber 1 is an opening, and the opening is closed by, for example, a ceiling plate 31 made of ceramics (made of an insulating material). A to-be-etched member 32 made of copper chloride (made by CuCl) is provided on the lower surface of the ceiling plate 31, and the to-be-etched member 32 has a quadrangular pyramid shape. A slit-shaped opening 33 is formed around the cylindrical portion of the chamber 1, and one end of the cylindrical passage 34 is fixed to the opening 33.
[0118]
A cylindrical excitation chamber 35 made of an insulator is provided in the middle of the passage 34, and a coiled plasma antenna 36 is provided around the excitation chamber 35. The plasma antenna 36 is connected to the matching unit 9 and the power supply 10. Then, power is supplied. A flow rate controller 12 is connected to the other end of the passage 34, and Cl as a halogen is introduced into the passage 34 via the flow rate controller 12. ₂ Containing source gas (Cl ₂ Gas: Cl diluted with He, Ar, etc. to a chlorine concentration of ≦ 50%, preferably about 10% ₂ Gas).
[0119]
By making electromagnetic waves enter the inside of the excitation chamber 35 from the plasma antenna 36, Cl ₂ The gas is ionized and Cl ₂ Gas plasma 43 is generated (generation means). That is, Cl ₂ Gas is excited in an excitation chamber 35 isolated from the chamber 1. Cl ₂ Excitation Cl is sent into the chamber 1 from the opening 33 by the generation of the gas plasma 43, and the member to be etched 32 is etched by the excitation Cl.
[0120]
Etching of the member 32 to be etched generates CuCl leaving species 14 in the gas phase. Further, the dissociated species 15 of Cu and Cl are generated from the leaving species 14 by excited Cl. At this time, the member to be etched 32 is maintained at a temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by temperature control means such as a heater 37.
[0121]
The detached species 14 and the dissociated species 15 generated inside the chamber 1 are conveyed to the substrate 3 controlled to a temperature lower than that of the member to be etched 32. The Cu component of the dissociated species 15 is formed on the substrate 3, and the CuCl of the dissociated species 14 reacts with Cl of the dissociated species 15 to form Cl. ₂ Is released and a Cu component is deposited on the substrate 3. Thereby, a Cu thin film 16 is generated on the surface of the substrate 3.
[0122]
The above-described metal film production apparatus generates the leaving species 14 and the dissociated species 15 by an etching reaction using excited Cl, and produces the Cu thin film 16 by a direct reduction reaction. The film speed increases. Moreover, since a part of the excited Cl reacts with CuCl (ad) to produce the Cu thin film 16, the film forming speed is further increased. Further, since the temperature of the substrate 3 is controlled to be lower than that of the member to be etched 32 by using the temperature control means 6, it is possible to reduce the residue of impurities such as chlorine in the Cu thin film 16, and a high quality Cu thin film. 16 can be generated.
[0123]
And cheap Cl as source gas ₂ Since the Cu thin film 16 can be produced simply by using gas and using an inexpensive member 32 made of CuCl, the running cost can be greatly reduced.
[0124]
Furthermore, in the excitation chamber 35 isolated from the chamber 1, Cl ₂ Since the gas plasma 43 is generated, the substrate 3 is not exposed to the plasma, and the substrate 3 is not damaged by the plasma. For example, in the substrate 3 on which a film of another material is formed in the previous process, the material film formed in the previous process is not damaged.
[0125]
In the excitation chamber 33, Cl ₂ As a means for generating the gas plasma 43 (excitation means), it is also possible to use a microwave, a laser, an electron beam, radiated light, or the like.
[0126]
【The invention's effect】
The metal film production apparatus of the present invention includes a chamber in which a substrate is accommodated, a member to be etched made of a metal halide provided in a chamber facing the substrate, and a chamber between the substrate and the member to be etched. A rare gas supply means for supplying a gas and plasma generation of the inside of the chamber to generate a rare gas plasma and etching the member to be etched with the rare gas plasma to generate a metal halide separation species in the gas phase and a rare gas. Plasma generating means for generating dissociated species of halogen and metal from the dissociated species by gas plasma, and temperature control means for forming a metal component of the dissociated species on the substrate by lowering the temperature on the substrate side than the temperature on the member to be etched Therefore, the separation and dissociation species are generated by etching reaction using rare gas plasma, and the metal film is directly reduced. It can be produced.
[0127]
As a result, an inexpensive raw material can be used at a high film formation speed, and a metal film manufacturing apparatus capable of manufacturing a metal film in which no impurities remain in the film can be obtained.
[0128]
In addition, since no source gas for performing the reduction reaction is required, ancillary equipment for the source gas is not required, and the equipment cost can be greatly reduced. Since the metal film can be produced only by using the gas, the running cost can be greatly reduced.
[0132]
In addition, the metal film manufacturing apparatus of the present invention includes a cylindrical chamber in which a substrate is accommodated, a metal halide to-be-etched member provided in an upper portion of the chamber at a position facing the substrate, and a rare gas in the chamber. A rare gas supply means for supplying gas, a coiled antenna member provided outside the cylindrical portion of the chamber for plasmaizing the inside of the chamber by feeding power, and plasmaizing the inside of the chamber by feeding power to the antenna member Generates rare gas plasma and etches the member to be etched with the rare gas plasma, thereby generating a metal halide dissociation species in the gas phase and generating a halogen and metal dissociation species from the dissociation species by the rare gas plasma. And a temperature control for forming a dissociated metal component on the substrate by lowering the temperature on the substrate side lower than the temperature on the member to be etched. Because and means, using a noble gas plasma to produce a leaving species and dissociation species by the etching reaction, it is possible to produce metal film by direct reduction reaction.
[0133]
As a result, an inexpensive raw material can be used at a high film formation speed, and a metal film manufacturing apparatus capable of manufacturing a metal film in which no impurities remain in the film can be obtained.
[0134]
In addition, since no source gas for performing the reduction reaction is required, ancillary equipment for the source gas is not required, and the equipment cost can be greatly reduced. Since a metal film can be produced simply by using gas, the running cost can be greatly reduced, and a coiled antenna member is provided outside the cylindrical portion of the chamber, so that a large chamber is used. In other words, a metal film can be formed even on a large substrate.
[0135]
The metal film manufacturing apparatus of the present invention includes a chamber in which a substrate is accommodated and an upper opening, a rare gas supply means for supplying a rare gas into the chamber, and a ceiling member made of an insulating material that seals the upper opening of the chamber. And an antenna member that is provided outside the ceiling member and converts the inside of the chamber into plasma by feeding power, and a plurality of antenna members are disposed between the substrate and the ceiling member in a discontinuous state with respect to the direction of electricity flow of the antenna member. The inside of the chamber is turned into plasma by supplying power to the etched member made of metal halide and the antenna member and generating an electric flow in the same direction as the electric flow direction of the antenna member on the substrate side of the etched member. By generating a rare gas plasma and etching the member to be etched with the rare gas plasma, a release species of metal halide is generated in the vapor phase and the rare gas plasma is generated. Plasma generating means for generating a dissociated species of halogen and metal from the dissociated species by means of temperature; and a temperature control means for forming a metal component of the dissociated species on the substrate by lowering the temperature on the substrate side than the temperature on the member to be etched Therefore, a leaving film and a dissociating species can be generated by an etching reaction using a rare gas plasma, and a metal film can be formed by a direct reduction reaction.
[0136]
As a result, an inexpensive raw material can be used at a high film formation speed, and a metal film manufacturing apparatus capable of manufacturing a metal film in which no impurities remain in the film can be obtained.
[0137]
And even if the member to be etched, which is a conductor, exists under the antenna member, the electromagnetic wave reliably enters the chamber from the antenna member, and the rare gas plasma is stably generated below the member to be etched. In addition, since no source gas for performing the reduction reaction is required, ancillary equipment for the source gas is not required, and the equipment cost can be greatly reduced. Since the metal film can be produced only by using the member to be etched and the rare gas, the running cost can be greatly reduced.
[0138]
Further, the metal film manufacturing apparatus of the present invention etches a metal halide etching target member with a rare gas component that is excited by converting a rare gas into plasma in a chamber in which a substrate is accommodated and a portion separated from the chamber. Generating means for generating metal halide dissociation species in the gas phase and generating dissociation species of halogen and metal from the dissociation species, and reducing the temperature of the substrate side to be lower than the temperature of the member to be etched. Since the temperature control means for depositing the metal component on the substrate is provided, the excited rare gas component is used to generate the leaving species and the dissociated species by the etching reaction, and the metal film can be produced by the direct reduction reaction.
[0139]
As a result, an inexpensive raw material can be used at a high film formation speed, and a metal film manufacturing apparatus capable of manufacturing a metal film in which no impurities remain in the film can be obtained.
[0140]
In addition, since no source gas for performing the reduction reaction is required, ancillary equipment for the source gas is not required, and the equipment cost can be greatly reduced. Since a metal film can be produced simply by using a gas, the running cost can be greatly reduced. Further, since a rare gas plasma is generated by being isolated from the chamber, the substrate is turned into a plasma. The substrate is not exposed, and the substrate is not damaged by the plasma.
[0141]
Since the rare gas is argon, an inexpensive argon gas can be used.
[0142]
Further, the metal film manufacturing apparatus of the present invention includes a chamber in which a substrate is accommodated, a member to be etched made of a metal halide provided in a chamber at a position facing the substrate, and an interior of the chamber between the substrate and the member to be etched. In halogen The source gas supply means for supplying the gas and the inside of the chamber is converted into plasma. halogen Generate plasma halogen Etching the material to be etched with plasma generates metal halide separation species in the gas phase. halogen Plasma generating means for generating dissociated species of halogen and metal from the dissociated species by plasma; and temperature control means for forming a metal component of the dissociated species on the substrate by lowering the temperature on the substrate side than the temperature on the member to be etched. So that halogen By using plasma, a leaving film and a dissociating seed are generated by an etching reaction, and a metal film can be formed by a direct reduction reaction.
[0143]
As a result, an inexpensive raw material can be used with a high film formation rate, and a metal film manufacturing apparatus capable of manufacturing a metal film in which no impurities remain in the film can be obtained.
[0144]
And since a metal film can be produced only by using an inexpensive metal halide to-be-etched member and a source gas containing halogen, the running cost can be greatly reduced.
[0148]
Further, the metal film manufacturing apparatus of the present invention includes a cylindrical chamber in which a substrate is accommodated, a metal halide etching target member provided in an upper portion of the chamber at a position facing the substrate, and a chamber. halogen Source gas supply means, a coiled antenna member that is provided outside the cylindrical portion of the chamber and converts the inside of the chamber into plasma by feeding power, and the antenna member is turned into plasma by feeding power to the antenna member. The halogen Generate plasma halogen Etching the material to be etched with plasma generates metal halide separation species in the gas phase. halogen Plasma generating means for generating dissociated species of halogen and metal from the dissociated species by plasma; and temperature control means for forming a metal component of the dissociated species on the substrate by lowering the temperature on the substrate side than the temperature on the member to be etched. So that halogen By using plasma, a leaving film and a dissociating seed are generated by an etching reaction, and a metal film can be formed by a direct reduction reaction.
[0149]
As a result, an inexpensive raw material can be used at a high film formation speed, and a metal film manufacturing apparatus capable of manufacturing a metal film in which no impurities remain in the film can be obtained.
[0150]
Since a metal film can be produced simply by using an inexpensive metal halide to-be-etched member and a halogen-containing source gas, the running cost can be greatly reduced. Since the coiled antenna member is provided outside the portion, it is possible to generate a metal film even when a large chamber is used, that is, even on a large substrate.
[0151]
In addition, the metal film manufacturing apparatus of the present invention includes a chamber in which a substrate is accommodated and an upper portion is opened, halogen A source gas supply means for supplying a gas, an insulating ceiling member that seals the upper opening of the chamber, an antenna member that is provided outside the ceiling member and converts the inside of the chamber into plasma by feeding power, and an antenna member A plurality of metal halide etching target members arranged between the substrate and the ceiling member in a discontinuous state with respect to the direction of electricity flow, and feeding power to the antenna member to connect the antenna member to the substrate side of the etching target member. By creating an electric flow in the same direction as the electric flow direction, halogen Generate plasma halogen Etching the material to be etched with plasma generates metal halide separation species in the gas phase. halogen Plasma generating means for generating dissociated species of halogen and metal from the dissociated species by plasma; and temperature control means for forming a metal component of the dissociated species on the substrate by lowering the temperature on the substrate side than the temperature on the member to be etched. So that halogen By using plasma, a leaving film and a dissociating seed are generated by an etching reaction, and a metal film can be formed by a direct reduction reaction.
[0152]
As a result, an inexpensive raw material can be used at a high film formation speed, and a metal film manufacturing apparatus capable of manufacturing a metal film in which no impurities remain in the film can be obtained.
[0153]
And even if the member to be etched, which is a conductor, exists under the antenna member, the electromagnetic wave reliably enters the chamber from the antenna member, and the rare gas plasma is stably generated below the member to be etched. In addition, since the metal film can be produced simply by using an inexpensive metal halide to-be-etched member and a source gas containing halogen, the running cost can be greatly reduced.
[0154]
In addition, the metal film manufacturing apparatus of the present invention has a chamber in which a substrate is accommodated and a portion separated from the chamber. halogen Excited into plasma halogen Etching a metal halide to-be-etched member with a component generates a metal halide separation species in the gas phase and generates a halogen and metal dissociation species from the separation species, and a substrate side temperature. Since it has a temperature control means for forming a metal component of dissociated species on the substrate at a temperature lower than the temperature of the member to be etched, a separation species and a dissociated species are generated by an etching reaction using an excited halogen gas component, A metal film can be produced by a direct reduction reaction.
[0155]
As a result, an inexpensive raw material can be used at a high film formation speed, and a metal film manufacturing apparatus capable of manufacturing a metal film in which no impurities remain in the film can be obtained.
[0156]
Further, since the metal film can be produced simply by using an inexpensive metal halide to-be-etched member and a halogen-containing source gas, the running cost can be greatly reduced, and the chamber can be isolated. Since the halogen gas plasma is generated, the substrate is not exposed to the plasma and the substrate is not damaged by the plasma.
[0157]
Also, halogen The salt Plain Since there is, inexpensive chlorine gas can be used.
[0158]
Since the member to be etched is made of copper chloride, CuCl is generated as a separation species and Cu and Cl are generated as dissociation species, and Cu is formed on the substrate, so that inexpensive copper chloride is used. Cu film can be produced.
[0159]
Further, since the metal component of the metal halide is tantalum, tungsten or titanium which is a halide forming metal, a tantalum or tungsten film can be formed.
[0160]
In the metal film manufacturing method of the present invention, the inside of the chamber in which the substrate is accommodated is turned into plasma to generate a rare gas plasma, and the member to be etched is etched with the rare gas plasma, thereby releasing the metal halide into the gas phase. In addition to generating seeds, dissociating species of halogen and metal are generated from the leaving species by noble gas plasma, and the temperature of the substrate side is made lower than the temperature of the member to be etched, thereby forming the metal component of the dissociating species on the substrate. Since it did in this way, it becomes possible to set it as the metal film preparation method which can use a cheap raw material with a high film-forming speed | rate, and can produce the metal film in which an impurity does not remain in a film | membrane.
[0161]
Since the rare gas is argon, an inexpensive argon gas can be used.
[0162]
In the metal film manufacturing method of the present invention, the inside of the chamber in which the substrate is accommodated is plasmatized to generate halogen gas plasma, and the metal halide etching target member is etched in the gas phase by halogen gas plasma. A metal halide dissociation species is generated and a halogen and metal dissociation species are generated from the dissociation species by halogen gas plasma, and the metal component of the dissociation species is reduced by lowering the temperature on the substrate side than the temperature on the member to be etched. Since the film is formed on the substrate, it is possible to provide a metal film manufacturing method capable of forming a metal film having a high film forming speed and using an inexpensive raw material without impurities remaining in the film.
[0163]
The halogen that generates the halogen gas plasma is a salt. Plain Since there is, inexpensive chlorine gas can be used.
[0164]
In addition, by making the member to be etched made of copper chloride, CuCl is generated as a separation species and Cu and Cl are generated as dissociation species, Cu is formed on the substrate, and Cl is reacted with CuCl on the substrate to form Cl. ₂ Since Cu is deposited on the substrate by releasing the Cu, a Cu film can be generated using inexpensive copper chloride.
[Brief description of the drawings]
FIG. 1 is a schematic side view of a metal film production apparatus for performing a metal film production method according to a first embodiment of the present invention.
FIG. 2 is an explanatory diagram of a conceptual state of film formation.
FIG. 3 is a schematic side view of a metal film production apparatus for performing a metal film production method according to a second embodiment of the present invention.
FIG. 4 is a schematic side view of a metal film production apparatus for performing a metal film production method according to a third embodiment of the present invention.
FIG. 5 is a view taken along line XX in FIG.
6 is a view taken along the line VI-VI in FIG. 5;
FIG. 7 is a schematic configuration diagram of a metal film manufacturing apparatus for performing a metal film manufacturing method according to a fourth embodiment of the present invention.
FIG. 8 is a schematic configuration diagram of a metal film manufacturing apparatus for performing a metal film manufacturing method according to a fifth embodiment of the present invention.
FIG. 9 is an explanatory diagram of a conceptual state of film formation.
FIG. 10 is a schematic configuration diagram of a metal film manufacturing apparatus for performing a metal film manufacturing method according to a sixth embodiment of the present invention.
FIG. 11 is a schematic configuration diagram of a metal film manufacturing apparatus for performing a metal film manufacturing method according to a seventh embodiment of the present invention.
FIG. 12 is a schematic configuration diagram of a metal film manufacturing apparatus for performing a metal film manufacturing method according to an eighth embodiment of the present invention.
[Explanation of symbols]
1 chamber
2 Support stand
3 Substrate
4 Heater
5 Refrigerant distribution means
6 Temperature control means
7 Refrigerant distribution means
6 Temperature control means
7 CuCl plate
8 Vacuum equipment
9 Matching device
10 Power supply
11 Ar gas nozzle
12, 42 Flow controller
13 Ar gas plasma
14 Withdrawal species
15 Dissociated species
16 Cu thin film
17 Exhaust port
21 Plasma antenna
22 Ceiling board
23 Member to be etched
24 Ring member
25 Protrusion
26 Notch
27 Plasma antenna
31 Ceiling board
32 Member to be etched
33 opening
34 Passage
35 Excitation room
36 Plasma antenna
41 Cl ₂ Gas nozzle
43 Cl ₂ Gas plasma

Claims (17)

A chamber containing a substrate;
A member to be etched made of a metal halide provided in a chamber at a position facing the substrate;
A rare gas supply means for supplying a rare gas into the chamber between the substrate and the member to be etched;
The inside of the chamber is plasmatized to generate a rare gas plasma, and the etched member is etched with the rare gas plasma to generate metal halide separation species in the gas phase, and the rare gas plasma generates halogen and metal from the separation species. Plasma generating means for generating dissociated species;
An apparatus for producing a metal film, comprising: temperature control means for lowering the temperature on the substrate side to be lower than the temperature on the member to be etched and forming a metal component of dissociated species on the substrate. A cylindrical chamber containing a substrate;
A member to be etched made of a metal halide provided in an upper portion of the chamber at a position facing the substrate;
A rare gas supply means for supplying a rare gas into the chamber;
A coiled antenna member provided outside the cylindrical portion of the chamber for converting the inside of the chamber into plasma by power feeding;
By supplying power to the antenna member, the inside of the chamber is turned into plasma to generate a rare gas plasma, and the member to be etched is etched with the rare gas plasma, thereby generating metal halide separation species in the gas phase and Plasma generating means for generating halogen and metal dissociation species from the leaving species;
An apparatus for producing a metal film, comprising: temperature control means for lowering the temperature on the substrate side to be lower than the temperature on the member to be etched and forming a metal component of dissociated species on the substrate. A chamber in which the substrate is accommodated and the upper side is open;
A rare gas supply means for supplying a rare gas into the chamber;
A ceiling member made of insulating material that seals the upper opening of the chamber;
An antenna member provided on the outside of the ceiling member for converting the inside of the chamber into plasma by feeding,
A member to be etched made of a metal halide disposed between the substrate and the ceiling member in a discontinuous state with respect to the direction of electricity flow of the antenna member;
By supplying power to the antenna member and generating an electric flow in the same direction as the electric flow direction of the antenna member on the substrate side of the member to be etched, the inside of the chamber is turned into a plasma to generate a rare gas plasma, which is covered with the rare gas plasma. Means for generating a metal halide dissociation species in the gas phase by etching the etching member, and generating a halogen and metal dissociation species from the dissociation species by a rare gas plasma;
An apparatus for producing a metal film, comprising: temperature control means for lowering the temperature on the substrate side to be lower than the temperature on the member to be etched and forming a metal component of dissociated species on the substrate. A chamber containing a substrate;
A metal halide release species is generated in the gas phase by etching a metal halide to-be-etched member with the excited rare gas component by plasmaizing a rare gas at a site isolated from the chamber, and halogen from the release species. And means for generating dissociated species of the metal,
An apparatus for producing a metal film, comprising: temperature control means for lowering the temperature on the substrate side to be lower than the temperature on the member to be etched and forming a metal component of dissociated species on the substrate. In any one of Claims 1 thru | or 4 ,
A metal film manufacturing apparatus, wherein the rare gas is argon. A chamber containing a substrate;
A member to be etched made of a metal halide provided in a chamber at a position facing the substrate;
Source gas supply means for supplying halogen into the chamber between the substrate and the member to be etched;
The dissociated species halogen and metal from the detached species by halogen plasma to generate a disengagement species of the metal halide in the gas phase by etching the etched member with a halogen plasma internally to generate halogen plasma into plasma to the chamber Plasma generating means for generating;
An apparatus for producing a metal film, comprising: temperature control means for lowering the temperature on the substrate side to be lower than the temperature on the member to be etched and forming a metal component of dissociated species on the substrate. A cylindrical chamber containing a substrate;
A member to be etched made of a metal halide provided in an upper portion of the chamber at a position facing the substrate;
Source gas supply means for supplying halogen into the chamber;
A coiled antenna member provided outside the cylindrical portion of the chamber for converting the inside of the chamber into plasma by power feeding;
From the detached species by halogen plasma to generate a disengagement species of the metal halide in the gas phase by by plasma in the chamber by performing feeding to the antenna member to etch the etched member with a halogen plasma is generated halogen plasma Plasma generating means for generating dissociated species of halogen and metal;
An apparatus for producing a metal film, comprising: temperature control means for lowering the temperature on the substrate side to be lower than the temperature on the member to be etched and forming a metal component of dissociated species on the substrate. A chamber in which the substrate is accommodated and the upper side is open;
Source gas supply means for supplying halogen into the chamber;
A ceiling member made of insulating material that seals the upper opening of the chamber;
An antenna member provided on the outside of the ceiling member for converting the inside of the chamber into plasma by feeding,
A member to be etched made of a metal halide disposed between the substrate and the ceiling member in a discontinuous state with respect to the direction of electricity flow of the antenna member;
Etched member inside the chamber by causing a flow of the flow direction and in the same direction electric electrical antenna member to the substrate side by halogen plasma to generate halogen plasma into plasma of the etched member performs fed to the antenna member Plasma generating means for generating a metal halide dissociation species in the gas phase by etching and generating a halogen and metal dissociation species from the dissociation species by halogen plasma,
An apparatus for producing a metal film, comprising: temperature control means for lowering the temperature on the substrate side to be lower than the temperature on the member to be etched and forming a metal component of dissociated species on the substrate. A chamber containing a substrate;
Halogen plasma is generated at a site separated from the chamber, and the metal halide etching member is etched by the excited halogen component to generate a metal halide separation species in the gas phase, and the halogen and metal from the separation species. Generating means for generating a dissociated species of
An apparatus for producing a metal film, comprising: temperature control means for lowering the temperature on the substrate side to be lower than the temperature on the member to be etched and forming a metal component of dissociated species on the substrate. In the metal film production apparatus according to any one of claims 6 to 9 ,
Halogen metal film production apparatus, characterized in that the chlorine. The metal film manufacturing apparatus according to any one of claims 1 to 10 ,
An apparatus for producing a metal film, characterized in that a member to be etched is made of copper chloride, so that CuCl is generated as a separation species and Cu and Cl are generated as dissociation species to form a Cu film on a substrate. The metal film manufacturing apparatus according to any one of claims 1 to 10 ,
An apparatus for producing a metal film, wherein the metal component of the metal halide is a tantalum, tungsten or titanium which is a halide forming metal. Plasmaizing the inside of the chamber in which the substrate is accommodated to generate a rare gas plasma,
Etching a metal halide to-be-etched member with a rare gas plasma generates a metal halide separation species in the gas phase, and generates a halogen and metal dissociation species from the separation species with a rare gas plasma.
A method for producing a metal film, characterized in that a metal component of dissociated species is formed on a substrate by making the temperature on the substrate side lower than the temperature on the member to be etched. In the metal film preparation method according to claim 13 ,
A method for producing a metal film, wherein the rare gas for generating the rare gas plasma is argon. Plasma is generated inside the chamber in which the substrate is accommodated to generate halogen gas plasma,
Etching a metal halide to-be-etched member with a halogen gas plasma generates a release species of the metal halide in the gas phase and generates a dissociation species of halogen and metal from the release species by the halogen gas plasma.
A method for producing a metal film, characterized in that a metal component of dissociated species is formed on a substrate by making the temperature on the substrate side lower than the temperature on the member to be etched. The method for producing a metal film according to claim 15 ,
Metal film production method characterized by the halogen generating a halogen gas plasma is chlorine. In the metal film preparation method according to any one of claims 13 to 16 ,
By making the member to be etched made of copper chloride, CuCl is generated as a separation species and Cu and Cl are generated as dissociation species, Cu is formed on the substrate, and Cl is reacted with CuCl on the substrate as Cl _2. A metal film manufacturing method characterized by depositing Cu on a substrate by discharging.

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