JP2015115178A - Organic el display device and method for manufacturing organic el display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic EL display device capable of achieving higher definition without requiring highly accurate vapor deposition and without using a color filter.SOLUTION: An organic EL display device includes: an R sub pixel having an R emission layer, a G emission layer and a B emission layer among the R emission layer (144), the G emission layer (145) and the B emission layer (146) which emit light in wavelength regions of an R color, a G color and a B color, respectively, in emission, and emitting light of a red color; a G sub pixel having the G emission layer and the B emission layer, and emitting light of a G color; and a B sub pixel having the B emission layer and emitting light of a B color.

Description

  The present invention relates to an organic EL (Electro-Luminescent) display device and a method for manufacturing the organic EL display device.

  In recent years, an image display device (hereinafter referred to as an “organic EL display device”) using a self-luminous body called an organic light emitting diode has been put into practical use. Since this organic EL display device uses a self-luminous body as compared with a conventional liquid crystal display device, it is not only superior in terms of visibility and response speed, but also has an auxiliary illumination device such as a backlight. Since it is not necessary, further thinning is possible.

  In such an organic EL display device, an organic EL display device that performs color display has a light emitting element that emits three colors of R (red), G (green), and B (blue) for each pixel, and the light emitting element is white. A device that emits light and a color filter of each pixel transmits each wavelength region of RGB three colors, a combination of these, and the like are known.

  In general, vapor deposition is used for forming a light emitting layer of an organic EL display device. However, in an organic EL display device that emits light of three colors of RGB, pixels that emit light of the three colors of RGB, respectively. It is necessary to pattern using a mask. However, the accuracy of patterning using a mask in vapor deposition is lower than the accuracy of film formation by photolithography, and contamination of foreign matter or generation of scratches due to contact with the mask may occur. It is difficult to manufacture.

  On the other hand, in the organic EL display device in which the light emitting layers of all the pixels are white and the light of three colors is emitted by the color filter, a vapor deposition process using a mask is unnecessary, so that high definition can be achieved. There is a risk of a decrease in light emission efficiency due to the filter, a decrease in lifetime due to a decrease in light emission efficiency, and a color mixture in which light is emitted from adjacent pixels due to the distance between the color filter and the light emitting layer.

  The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide an organic EL display device that can achieve high definition without requiring high-precision vapor deposition and without using a color filter. To do.

  The organic EL display device of the present invention, among the R light emitting layer, the G light emitting layer, and the B light emitting layer, which emits light in the wavelength regions of R (red), G (green), and B (blue) colors when emitting light, The R light emitting layer has the R light emitting layer, the G light emitting layer, and the B light emitting layer. An organic EL display device comprising a G subpixel and a B subpixel having the B light emitting layer and emitting B light.

  In the organic EL display device of the present invention, each of the G subpixel and the B subpixel may include an R light emission invalidating layer that is the R light emitting layer invalidated by heat treatment.

  In the organic EL display device of the present invention, the glass transition temperature of the R light emitting layer may be lower than the glass transition temperatures of the G light emitting layer and the B light emitting layer.

  In the organic EL display device of the present invention, the glass transition temperature of the host material or dopant material of the R light emitting layer is lower than the glass transition temperature of the host material and dopant material of the G light emitting layer and B light emitting layer, respectively. Also good.

  In the organic EL display device of the present invention, the host material of the R light emitting layer may include at least one of a TPD photoreceptor, Spiro-TBD, and TCBPA.

  In the organic EL display device of the present invention, at least one host material of the G light-emitting layer and the B light-emitting layer includes at least one of TSBF, 2,2′-Spiro-Pye, and BSBF. You may go out.

  The method for producing an organic EL display device of the present invention includes an R light emitting layer, a G light emitting layer, and a B light emitting layer that emit light in the R (red), G (green), and B (blue) wavelength regions when emitting light. Among them, an R light emitting layer forming step for forming the R light emitting layer over the entire display region, and an R subpixel for emitting R light and a G sublight for emitting G light through the G light emitting layer. A G light emitting layer film forming step for forming a film in the pixel region, a B light emitting layer film forming step for forming the B light emitting layer over the entire display region, and the B light emitting layer among the formed R light emitting layers. And a heat treatment step of heating and invalidating the R light emitting layer formed in the region of the B subpixel and the G subpixel that emit light.

  In the manufacturing method of the organic EL display device of the present invention, the heat treatment step may be performed at a temperature higher than the glass transition temperature of the R light emitting layer and lower than the glass transition temperatures of the G light emitting layer and the B light emitting layer. Good.

  In the method for manufacturing an organic EL display device of the present invention, the heat treatment step may be performed by laser annealing.

  The method for manufacturing an organic EL display device according to the present invention further includes a mask arranging step of arranging a mask for shielding the R subpixel, and the heat treatment step is performed by irradiating the entire surface of the display region with a halogen lamp heater. It may be done.

  In the organic EL display device manufacturing method of the present invention, the R light emitting layer, the G light emitting layer, and the B light emitting layer are formed, and then an ATO (antimony-doped tin oxide) film is formed. The heat treatment step may be performed by irradiating the entire surface of the display region with a halogen lamp heater.

1 is a diagram schematically showing an organic EL display device according to an embodiment of the present invention. It is a figure which shows schematically the cross section in the II-II line | wire of FIG. It is sectional drawing shown about the detailed layer structure of the organic EL element of FIG. It is a figure for demonstrating the layer structure of the light emitting organic layer of FIG. It is a figure which shows schematically the layer structure of R subpixel. It is a figure which shows schematically the layer structure of G subpixel. It is a figure which shows schematically the layer structure of B subpixel. It is a flowchart which shows roughly about the manufacturing method of the organic electroluminescence display of this embodiment. It is a flowchart which shows roughly about the manufacturing method of the organic electroluminescence display of this embodiment. It is a flowchart which shows roughly about the manufacturing method of the organic electroluminescence display of this embodiment. It is a figure which shows typically the mode of irradiation in the case of performing annealing processing by laser irradiation. It is a table | surface which shows the chromaticity change before and behind laser irradiation. It is a figure which shows typically the mode of irradiation in the case of performing an annealing process with a halogen lamp heater using a shielding mask. It is a table | surface which shows the chromaticity change before and behind lamp irradiation. It is a figure which shows typically the mode of irradiation in the case of performing an annealing process with a halogen lamp heater using an ultrafine particle film. It is a table | surface which shows the chromaticity change before and behind lamp irradiation.

  Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same or equivalent elements are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 schematically shows an organic EL display device 100 according to an embodiment of the present invention. As shown in this figure, the organic EL display device 100 has two substrates, a TFT (Thin Film Transistor) substrate 120 and a counter substrate 150, and a transparent resin filler between these substrates. 221 (see FIG. 2) is sealed. In the organic EL display device 100, a display region 205 including pixels 210 arranged in a matrix is formed, and light corresponding to three colors of R (red), G (green), and B (blue) is emitted from the pixels 210. 3 sub-pixels 212.

  Further, the TFT substrate 120 is applied with a potential for conducting between the source and the drain with respect to the scanning signal line of the pixel transistor disposed in each of the sub-pixels 212, and to the data signal line of each pixel transistor. A driving IC (Integrated Circuit) 182 which is a driving circuit for applying a voltage corresponding to the gradation value of the pixel is mounted, and an FPC (Flexible Printed Circuits) 181 for inputting an image signal or the like from the outside is attached. Yes. In this embodiment, as shown by the arrows in the figure, the top emission type organic EL display device emits light to the side of the TFT substrate 120 on which the light emitting layer is formed. However, the bottom emission type organic EL display device is used. It may be an EL display device.

  FIG. 2 is a diagram schematically showing a cross section taken along line II-II in FIG. As shown in this cross-sectional view, the TFT substrate 120 covers the TFT circuit layer 121 in which the TFT circuit is formed, the plurality of organic EL elements 130 formed on the TFT circuit layer 121, and the organic EL element 130. And a sealing film 125 that blocks moisture. The organic EL elements 130 are formed by the number of sub-pixels 212, but are omitted from the drawing for easy understanding. A filler 221 between the TFT substrate 120 and the counter substrate 150 is sealed with a sealant 222.

  FIG. 3 is a cross-sectional view showing a detailed layer structure of the organic EL element 130. The organic EL element 130 is formed for each sub-pixel 212 of the pixel 210 and covers the end of the lower electrode 131 with an insulating film and a lower electrode 131 electrically connected to the electrode of the TFT circuit layer 121. On the light-emitting organic layer 140, a pixel separation film 132 that separates the sub-pixels 212, a light-emitting organic layer 140 that is formed on the lower electrode 131 and the pixel separation film 132, and includes a plurality of organic layers including a light-emitting layer. And an upper electrode 133 that is formed in common to the sub-pixels 212 so as to cover the region 205 and is made of a transparent conductive film such as IZO (Indium Zinc Oxide). Here, in addition to IZO, Mg—Ag, Al, or the like can be used as the material of the upper electrode 133.

  FIG. 4 is a diagram for explaining the layer structure of the light-emitting organic layer 140. As shown in this figure, the light-emitting organic layer 140 is formed on a hole injection layer (HIL: Hole Injection Layer) 141 that takes holes from the lower electrode 131 and the hole injection layer 141, and transports holes. A hole transport layer (HTL) 142, an R light-emitting layer 144 that emits R color and is formed on the hole transport layer 142, and a hole transport layer 142 of the G subpixel and the B subpixel. The R emission invalidation layer 143 formed by disabling the formed R emission layer 144 by heat treatment, and the R emission layer 144 and the R emission invalidation layer 143 of the R subpixel and the G subpixel are formed. The G light-emitting layer 145 that emits G color, the B light-emitting layer 146 that emits B color and is formed on the entire display region 205, and the electron transport that transports electrons are formed on the B light-emitting layer 146. Layer (ETL: Electron Transport Layer 147). Here, although not particularly shown in the present embodiment, a configuration having an electron injection layer (EIL), a charge generation layer (CGL), and a carrier block layer may be used.

  Here, for the hole injection layer 141, for example, any one of HAT-CN (6) (1, 4, 5, 8, 9, 12-hexaazatriphenylene-hexacarbonitrile), CuPc, and PEDOT: PSS can be used. The hole transport layer 142 may be formed by using, for example, NPB (N, N′-Di-[(1-naphthyl) -N, N′-diphenyl] -1,1′-biphenyl) -4,4′-diamine. ) Can be used. The R light emitting layer 144 is formed by using at least one of TPD photoreceptor (N, N′-Bis (3-methylphenyl) -N, N′-bis (phenyl) -benzidine), Spiro-TBD, and TCBPA as a host material. It may contain one. Further, DCM ((E) -2- (2- (4- (dimethylamino) styryl) -6-methyl-4H-pyran-4-ylidene) malononitrile) can be used as a dopant material for the R light emitting layer 144.

  The G light-emitting layer 145 and the B light-emitting layer 146 include TSBF (2,7-Bis (9,9-spirobifluoren-2-yl) -9,9-spirobifluorene), 2,2′-Spiro-Pye, and a host material. At least one of the BSBFs can be used. Further, Coumalin 6 (3- (2-Benzothiazolyl) -7- (diethylamino) coumarin) can be used as the dopant material of the G light emitting layer 145, and Perylene (Perylene) is used as the dopant material of the B light emitting layer 146. Can be used. The electron transport layer 147 can be formed by co-evaporation of Alq3 (Tris- (8-hydroxyquinoline) aluminum) and Liq (8-hydroxy-quinolinato-lithium). Here, Li may be used instead of Liq. When an electron injection layer is inserted between the electron transport layer 147 and the upper electrode 133, any one of Li, Liq, LiO2, and LiF may be used. Good.

  Here, the glass transition temperature Tg (TPD) of TPD is lower than the glass transition temperature Tg (TSBF) of TSBF, whereby the glass transition temperature Tg of the R light emitting layer 144 is changed to the G light emitting layer 145 and B It is lower than the glass transition temperature Tg of the light emitting layer 146. Here, in order to obtain such a relationship of the glass transition temperature Tg, the glass transition temperature Tg of the host material or dopant material used for the R light emitting layer 144 is changed to the glass transition temperature of the host material and dopant material of the other light emitting layer. It can be lower than Tg. The glass transition temperature mentioned here is a temperature at which the composition of each light emitting layer (R light emitting layer, G light emitting layer, and B light emitting layer) is decomposed.

  FIG. 5 is a diagram schematically showing the layer configuration of the R subpixel. As shown in this figure, the R sub-pixel has an R light emitting layer 144, a G light emitting layer 145, and a B light emitting layer 146 stacked, and the order of carrier transport is based on the band gap width of these light emitting layers. Based on this, the R light emitting layer 144, the G light emitting layer 145, and the B light emitting layer 146 have the property of easily emitting light in this order. That is, by laminating the R light emitting layer 144, the G light emitting layer 145, and the B light emitting layer 146, the R light emitting layer 144 emits light preferentially, and the G light emitting layer 145 and the B light emitting layer 146 do not emit light. , Function as an R sub-pixel emitting light of R color.

  FIG. 6 is a diagram schematically showing the layer configuration of the G subpixel. As shown in this figure, the G subpixel has an R emission invalidation layer 143, a G emission layer 145, and a B emission layer 146 stacked. The R light emission invalidating layer 143 is substantially decomposed by heat treatment and substantially functions as a hole transport layer. Therefore, as described above, based on the carrier transport rank order based on the band gap width, the G light emitting layer 145 and the B light emitting layer 146 are likely to emit light in this order. When the layer 146 is stacked, the G light emitting layer 145 emits light preferentially, and functions as a G subpixel that emits G color.

  FIG. 7 is a diagram schematically showing the layer configuration of the B subpixel. In the B subpixel, an R emission invalidating layer 143 and a B emission layer 146 are stacked. As described above, since the R light emission invalidating layer 143 is decomposed by heat treatment and substantially functions as a hole transport layer, the B light emitting layer 146 emits light and functions as a B subpixel.

  Therefore, each pixel can emit light of R, G, and B by having the layer structure as described above.

  8 to 12 are flowcharts schematically showing a method for manufacturing the organic EL display device 100 of the present embodiment. As shown in FIG. 8, in the method of manufacturing the organic EL display device 100, first, a known film forming process and photo process are performed on a TFT substrate 120 which is a transparent substrate made of glass or resin having a thickness of about 0.5 mm. A TFT circuit layer 121 is formed by a lithography process (S11). Next, the lower electrode 131 electrically connected to the electrode of the TFT circuit layer 121 is formed on the TFT circuit layer 121 for each subpixel 212 (S12). For example, the lower electrode 131 may be formed by depositing ITO using a reactive sputtering method of Ar + O 2 and performing patterning by wet etching after the deposition.

  Subsequently, a pixel separation film 132 that separates the sub-pixels 212 is formed by covering the end portion of the lower electrode 131 with an insulating film (S13). The pixel separation film 132 may be formed, for example, by forming a polyimide film and performing patterning exposure. Next, on the lower electrode 131 and the pixel separation film 132, a hole injection layer 141 that takes holes from the lower electrode 131 and a hole transport layer 142 that transports holes cover the display region 205 in order. Vapor deposition is performed using a rough mask (S14). In addition to HatCN6, CuPc, PEDOT: PSS, or the like can be used for the hole injection layer 141. Here, in the case of PEDOT: PSS, a coating method may be used. The film thickness can be about 10 nm. For the hole transport layer 142, NPB or the like can be used, and the film thickness can be about 50 nm.

  Next, an R light emitting layer 144 that emits R color is formed on the hole transport layer 142 so as to cover the display region 205 by a mask vapor deposition method using a rough mask (S15). The host material of the R light emitting layer 144 can be, for example, TPD, Spiro-TBD, TCBPA, or the like, and the dopant material can be DCM. Here, the film thickness can be, for example, 20 nm with TPD + DCM, and the dopant concentration can be 3%. Subsequently, the G light emitting layer 145 is deposited using only a fine mask only on the R subpixel and the G subpixel (S16). In the G light emitting layer 145, the host material can be TSBF, 2,2'-Spiro-Pye, BSBF, or the like, and the dopant material can be Coumarin6. The film thickness can be 20 nm and the dopant concentration can be 3%. Although described as a fine mask here, even if it is a high-definition screen, since it is a mask which vapor-deposits for 2 subpixels, a definition can be made lower than the case where 1 subpixel is vapor-deposited.

  Further, the B light emitting layer 146 is formed so as to cover the display region 205 by mask vapor deposition using a rough mask (S17). In the B light emitting layer 146, the host material can be TSBF and the dopant material can be Perylene. Further, the film thickness can be 20 nm, and the dopant concentration can be 5%. Subsequently, an electron transport layer 147 for transporting electrons is formed so as to cover the display region 205 by mask vapor deposition using a rough mask (S18). The electron transport layer 147 can be formed by co-evaporation of Alq3 and Liq. In this case, the concentration of Liq can be 50 wt%. In addition to co-evaporation with Liq, co-evaporation with Li may be used. When an electron injection layer is inserted between the electron transport layer 147 and the upper electrode 133, any one of Li, Liq, LiO2, and LiF is used. It is good also as using. The relationship between the glass transition temperature Tg (TPD) of TPD and the glass transition temperature Tg (TSBF) of TSBF is Tg (TPD) <Tg (TSBF), and the glass transition temperatures of the G organic layer and the B organic layer. Thus, the glass transition temperature of the R organic layer is lowered. The host material and the dopant material are not limited to these, and are selected so that the glass transition temperature of the R organic layer is lower than the glass transition temperatures of the G organic layer and the B organic layer.

  Although not used in this embodiment, an electron injection layer, a charge generation layer, a carrier block layer, and the like may be further formed. Here, the light-emitting organic layer 140 is formed by organic vapor deposition using a mask. However, a part or all of the light-emitting organic layer 140 is a spin coating method or an inkjet coating method, or a sputtering method, a CVD method, or the like. Alternatively, the film may be formed. In organic vapor deposition, film formation may be performed in a vapor deposition chamber at 1.0 × 10 ^ (− 4) Pa or less using a Wo vapor deposition boat.

  Subsequently, a common upper electrode 133 is formed in each sub-pixel 212 made of a transparent conductive film such as IZO (Indium Zinc Oxide) (S18). IZO may have a film thickness of about 100 nm formed by sputtering. In addition to IZO, Mg-Ag or Al may be used. Further, a SiN sealing film 125 is formed on the upper electrode 133 by CVD (S19). At the time of forming the SiN film, the film can be formed by using SiH4, NH3, and N2 as a mixed gas and generating plasma. The SiN film thickness can be about 500 μm, and the substrate temperature may be 50 ° C. or less.

  Next, a sealant 222 and a filler 221 are applied to the counter substrate 150 which is a transparent substrate made of glass or plastic. The sealing agent 222 is applied so as to surround the outside of the display area 205, and the filler 221 is filled by ODF (One Drop Filling) application so as to fill the display area 205 covered with the sealing agent 222. The counter substrate 150 is bonded to the TFT substrate 120 on which the organic EL element 130 is formed (S20). Thereafter, the multi-sided TFT substrate and the organic EL panel of the counter substrate are cut by a penet to form one organic EL display device 100.

  Note that the order of forming the R light-emitting layer 144, the G light-emitting layer 145, and the B light-emitting layer 146 is arbitrary and can be changed. In the case of bottom emission, the lower electrode may be made of Al or the like, the materials of the lower electrode and the upper electrode are exchanged, and the film formation order may be reversed. Subsequently, the organic EL display device 100 performs an annealing process described below.

  FIG. 11 is a diagram schematically showing a state of irradiation when annealing treatment is performed by laser irradiation, and FIG. 12 is a table showing a change in chromaticity before and after laser irradiation. As shown in this figure, the annealing process is performed by irradiating the G subpixel and the B subpixel with a YAG laser adjusted to 80 ° C. exceeding the glass transition temperature Tg of the R light emitting layer 144 for 1 minute. . The temperature adjustment can be performed by adjusting the output and the laser duty. In this embodiment, the YAG laser is used, but other lasers may be used. In FIG. 12, the chromaticity column shows coordinates (X, Y) in the chromaticity coordinate system. Before the laser irradiation, all the RGB pixels emitted light belonging to the R color of the chromaticity coordinates (0.60, 0.40). However, by laser irradiation, the G sub-pixel has a chromaticity coordinate (0.32, 0.32). It can be seen that the light belonging to the G color of 0.58) is emitted and the B subpixel is changed so as to emit the light belonging to the B color of the chromaticity coordinates (0.14, 0.19). Therefore, by selectively performing the annealing treatment, the R light emitting layer can be selectively invalidated, and B color and G color can be emitted.

  FIG. 13 is a diagram schematically showing the state of irradiation when annealing is performed by the halogen lamp heater 310 using the shielding mask 311, and FIG. 14 is a table showing chromaticity changes before and after lamp irradiation. . As shown in FIG. 13, the annealing process irradiates the entire display area 205 with light from the halogen lamp heater 310 through the shielding mask 311. Here, the shielding mask 311 uses a quartz glass plate provided with a shielding portion so as not to irradiate light to the R subpixel. Thereby, the light from the halogen lamp heater 310 is applied only to the G subpixel and the B subpixel. The temperature is adjusted so that the heat applied to the apparatus becomes 80 ° C. according to the output of the halogen lamp heater 310 and the distance between the organic EL display device 100 and the halogen lamp heater 310. The irradiation time was 1 minute. As shown in FIG. 14, even when the halogen lamp heater 310 and the shielding mask 311 in FIG. 13 are used, the same result as the annealing process by laser irradiation in FIG. 12 can be obtained. In this embodiment, a quartz glass plate is used for the shielding mask 311. However, any material that transmits infrared light may be used, and the shielding agent is a material that absorbs and reflects infrared light. Any material is acceptable. In this embodiment, since the entire surface of the lamp of the halogen lamp heater 310 is irradiated, the annealing process can be selectively performed without performing a scan like the laser irradiation in FIG.

  FIG. 15 is a diagram schematically showing the state of irradiation when annealing is performed by the halogen lamp heater 310 using the ultrafine particle film 312, and FIG. 16 is a table showing the chromaticity change before and after the lamp irradiation. is there. In this embodiment, an ultrafine particle film 312 made of antimony-doped tin oxide (ATO) is provided between the upper electrode 133 and the sealing film 125 of the organic EL display device 100. A transparent material in which ATO ultrafine particles are dispersed is applied on the R sub-pixel and fixed by thermosetting. The manufacturing method of the organic EL display device 100 is the same as that described above except for the step of applying the ATO dispersion material and thermosetting.

  The organic EL display device 100 is irradiated with light from the counter substrate 150 side by a halogen lamp heater so that the device reaches 80 ° C. In addition, an infrared absorbing material such as ATO has its characteristics, and in this embodiment, it is applied between the upper electrode 133 and the sealing film 125. It may be between 125 and filler 221 or between filler 221 and counter substrate 150. Furthermore, as a method for forming the ultrafine particle film 312, other methods such as a sputtering method and a CVD method can be used. As shown in FIG. 16, even when the halogen lamp heater 310 of FIG. 15 and the ultrafine particle film 312 of ATO are used, the same result as the annealing process by laser irradiation of FIG. 12 can be obtained. In this embodiment, since the entire surface of the lamp of the halogen lamp heater 310 is irradiated, the annealing process can be selectively performed without performing a scan like the laser irradiation in FIG.

  As described above, according to the present embodiment, in the vapor deposition of the RGB light emitting layers, the R light emitting layer 144 and the B light emitting layer 146 are vapor deposited on the entire display area, and the G light emitting layer 145 is larger than one subpixel. Since vapor deposition is performed every two subpixels, it is possible to perform the vapor deposition processing with coarser accuracy than the vapor deposition processing for one subpixel only once. As a result, a high-definition display device can be obtained as a whole, and the yield can be improved. In addition, a high-definition organic EL display device that does not use a color filter can be obtained.

  100 organic EL display device, 120 TFT substrate, 121 TFT circuit layer, 125 sealing film, 130 organic EL element, 131 lower electrode, 132 pixel separation film, 133 upper electrode, 140 light emitting organic layer, 141 hole injection layer, 142 Hole transport layer, 143 R emission invalidation layer, 144 R light emission layer, 145 G light emission layer, 146 B light emission layer, 147 electron transport layer, 150 counter substrate, 205 display area, 210 pixels, 212 subpixels, 221 filler 222 sealing agent, 310 halogen lamp heater, 311 shielding mask, 312 ultrafine particle film.

Claims (11)

Among the R, G, and B light emitting layers that emit light in the R (red), G (green), and B (blue) wavelength regions when emitted, the R light emitting layer, the G light emitting layer, and so on. And an R sub-pixel having the B light-emitting layer and emitting R-color light,
A G subpixel having the G light emitting layer and the B light emitting layer and emitting G light;
An organic EL display device comprising the B light emitting layer and a B subpixel that emits light of B color. The organic EL display device according to claim 1,
The G subpixel and the B subpixel each have an R emission invalidating layer that is the R emission layer invalidated by heat treatment. An organic EL display device according to claim 1 or 2,
The organic EL display device, wherein a glass transition temperature of the R light emitting layer is lower than a glass transition temperature of the G light emitting layer and the B light emitting layer. The organic EL display device according to claim 3,
The organic EL display device, wherein a glass transition temperature of a host material or a dopant material of the R light emitting layer is lower than a glass transition temperature of each of the host material and the dopant material of the G light emitting layer and the B light emitting layer. An organic EL display device according to any one of claims 1 to 4,
The organic EL display device, wherein the host material of the R light emitting layer contains at least one of TPD photoreceptor, Spiro-TBD, and TCBPA. An organic EL display device according to any one of claims 1 to 5,
At least one host material of the G light-emitting layer and the B light-emitting layer contains at least one of TSBF, 2,2′-Spiro-Pye, and BSBF. apparatus. Of the R, G, and B light emitting layers that emit light in the R (red), G (green), and B (blue) wavelength regions when light is emitted, the R light emitting layer covers the entire display region. An R light emitting layer film forming step of forming a film on,
A G light emitting layer forming step of forming the G light emitting layer in a region of an R subpixel that emits R light and a G subpixel that emits G light;
A B light emitting layer forming step of forming the B light emitting layer over the entire display region;
A heat treatment step of heating and invalidating the R light-emitting layer formed in the region of the B sub-pixel that emits B-color light and the G sub-pixel of the formed R light-emitting layer; Manufacturing method of display device. The organic EL display device according to claim 7,
The method for manufacturing an organic EL display device, wherein the heat treatment step is performed at a temperature higher than a glass transition temperature of the R light emitting layer and lower than a glass transition temperature of the G light emitting layer and the B light emitting layer. The organic EL display device according to claim 7 or 8,
The method of manufacturing an organic EL display device, wherein the heat treatment step is performed by laser annealing. The organic EL display device according to claim 7 or 8,
A mask arrangement step of arranging a mask for shielding the R subpixel;
The said heat treatment process is performed by irradiating the whole surface of a display area with a halogen lamp heater, The manufacturing method of the organic electroluminescence display characterized by the above-mentioned. The organic EL display device according to claim 7 or 8,
An ATO film forming step of forming an ATO (antimony-doped tin oxide) film after the R light emitting layer, the G light emitting layer, and the B light emitting layer are formed;
The said heat treatment process is performed by irradiating the whole surface of a display area with a halogen lamp heater, The manufacturing method of the organic electroluminescence display characterized by the above-mentioned.

Images