KR102315824B1 - Organic light emitting display device and method of fabricating the same - Google Patents

Abstract

The organic light emitting diode display according to an embodiment of the present invention may include a concave-convex pattern formed on the auxiliary electrode in the auxiliary electrode contact region.
That is, when a contact between the auxiliary electrode and the second electrode is formed by irradiating the laser, the thermal energy of the laser is concentrated at a desired position in the auxiliary electrode contact region by the concave-convex pattern so that the contact between the auxiliary electrode and the second electrode is stably maintained. By allowing the formation to be formed, it is possible to prevent an unwanted region from being damaged by escaping from the auxiliary electrode contact region by laser irradiation, or from occurrence of a defect phenomenon in which a contact is not made properly.
In addition, by lowering the resistance of the second electrode through the application of the auxiliary electrode in the organic light emitting diode display, power consumption of the organic light emitting display may be reduced and luminance may be improved.

Description

Organic light emitting display device and manufacturing method thereof

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode display, and more particularly, to an organic light emitting diode display having reduced power consumption and improved luminance by improving contact characteristics of an auxiliary electrode.

An organic light emitting display (OLED) is a self-emission type display device that injects electrons and holes from each of an electrode for electron injection and an anode for hole injection into an emission layer. , a display device using an organic light emitting diode that emits light when excitons in which injected electrons and holes are combined fall from an excited state to a ground state.

The organic light emitting diode display includes a top emission type, a bottom emission type, a dual emission type, etc. depending on a direction in which light is emitted, and a passive matrix type according to a driving method. ) and active matrix type.

Unlike a liquid crystal display (LCD), the organic light emitting diode display does not require a separate light source, so it can be manufactured in a lightweight and thin form. In addition, the organic light emitting diode display is being researched as a next-generation display because it is advantageous in terms of power consumption due to low voltage driving, and has excellent color realization, response speed, viewing angle, and contrast ratio (CR).

With the development of high-resolution displays, the number of pixels per unit area increases and high luminance is required. There is a problem in that the reliability of the organic light emitting diode decreases and power consumption increases.

Therefore, it is necessary to overcome the technical limitations of luminous efficiency, lifespan improvement, and power consumption reduction of organic light emitting diodes, which are factors that impede the quality and productivity of organic light emitting display devices. Various studies are being conducted for the development of an organic light emitting device capable of improving characteristics.

The organic light emitting diode display includes an organic light emitting layer formed between a first electrode and a second electrode facing each other, the first electrode is formed to correspond to each sub-pixel area, and the second electrode is common to the plurality of sub-pixel areas formed to respond.

As described above, unlike the first electrode formed to correspond to each sub-pixel area, the second electrode is formed to correspond to the entire plurality of sub-pixel areas and has a higher resistance than the first electrode as the organic light emitting diode display increases in size. have

In particular, in the case of a top emission type in which the organic light emitting diode display emits light through a path passing through the second electrode, in order to increase the luminance of the pixel area, the second electrode is formed of a transparent conductive material as thin as possible, so that a higher value is obtained. can have resistance.

That is, there is a problem in that the luminance uniformity of the pixel area is deteriorated due to the high resistance of the second electrode. In addition, in order to secure a desired level of luminance, there is a problem in that the power consumption of the organic light emitting diode display increases.

To solve this problem, the organic light emitting diode display may further include a separate auxiliary electrode formed of a material having a lower resistance than the second electrode in order to lower the resistance of the second electrode.

In order to electrically connect the auxiliary electrode and the second electrode by irradiating a laser to the auxiliary electrode contact region, the metal electrode material is melted with the thermal energy of the instantaneous laser to form a contact between the auxiliary electrode and the second electrode. can do.

However, the laser irradiated in this way may cause damage to a region other than a region requiring a contact in the auxiliary electrode contact region of the lower substrate, or a defective phenomenon in which contact is not properly or sufficiently made.

SUMMARY An object of the present invention is to provide an organic light emitting diode display in which power consumption is reduced and luminance is improved by improving contact characteristics of auxiliary electrodes in the organic light emitting diode display.

The problems to be solved according to the embodiment of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to the organic light emitting diode display according to the exemplary embodiment of the present invention, an organic light emitting diode display having reduced power consumption and improved luminance through improvement of a contact characteristic of an auxiliary electrode is provided.

An organic light emitting diode display according to an embodiment of the present invention includes a first auxiliary electrode and a second auxiliary electrode, a first electrode spaced apart from the first auxiliary electrode and the second auxiliary electrode, an organic light emitting layer located on the first electrode, and a second electrode. An organic light emitting diode display including a second electrode positioned in the organic light emitting layer opposite to the first electrode and a pattern portion formed on one of the first auxiliary electrode and the second auxiliary electrode.

In addition, the organic light emitting diode display according to an embodiment of the present invention further includes a substrate, a semiconductor layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source electrode, a drain electrode, a first passivation layer, a planarization layer, and a bank, and includes a sub-pixel region. It is characterized in that it is an organic light emitting display device having a light emitting area and a non-emission area.

The pattern part may be formed of a concave-convex pattern formed on the first auxiliary electrode.

The concave-convex pattern is simultaneously formed when the first passivation layer is formed, and the concave-convex pattern may be formed in a line form or a matrix form.

The pattern part may include a first concave-convex pattern formed on the first auxiliary electrode and a second concave-convex pattern formed on the first concave-convex pattern.

The first concave-convex pattern may be simultaneously formed when the first passivation layer is formed, the second concave-convex pattern may be simultaneously formed when the planarization layer is formed, and the first concave-convex pattern and the second concave-convex pattern may be formed in a line form or a matrix form.

The pattern portion may be formed of a third concave-convex pattern formed on the second auxiliary electrode.

The third concave-convex pattern is simultaneously formed when the bank is formed, and may be formed in a line form or a matrix form.

The first auxiliary electrode and the second auxiliary electrode and the second electrode may include an auxiliary electrode contact region electrically connected to each other.

In another aspect, in the organic light emitting diode display according to the exemplary embodiment of the present invention, the first auxiliary electrode and the second auxiliary electrode, the first auxiliary electrode and the second auxiliary electrode are positioned apart from the first electrode and the first electrode An organic light emitting display device comprising: an organic light emitting layer comprising: an organic light emitting layer, a second electrode positioned in the organic light emitting layer opposite to the first electrode, and an auxiliary electrode contact region in which the first auxiliary electrode and the second auxiliary electrode and the second electrode are electrically connected to each other characterized in that

It may include a pattern portion formed on any one of the first auxiliary electrode and the second auxiliary electrode.

The auxiliary electrode contact region may be formed in a non-emission region within the sub-pixel region.

The first auxiliary electrode may be formed simultaneously with the source electrode and the drain electrode.

The second auxiliary electrode may be formed simultaneously with the first electrode.

The auxiliary electrode contact region includes a contact hole penetrating the first passivation layer and the planarization layer to expose a portion of the first auxiliary electrode, and the first auxiliary electrode and the second auxiliary electrode are electrically connected to the second electrode through the outer edge of the contact hole. can be connected

In another aspect, a method of manufacturing an organic light emitting display device according to an embodiment of the present invention includes the steps of forming a semiconductor layer on a substrate, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, and a gate electrode Forming an interlayer insulating film on the interlayer insulating film, forming a source electrode, a drain electrode, and a first auxiliary electrode on the interlayer insulating film, forming a first protective film on the source electrode and the drain electrode, and forming a first concave-convex pattern on the auxiliary electrode forming a planarization layer on the first passivation layer, forming a contact hole through the planarization layer to expose a portion of the first auxiliary electrode and the concave-convex pattern, and forming the first electrode and the second auxiliary electrode on the planarization layer forming a bank on the first electrode, forming an organic light emitting layer on the first electrode and the bank, forming a second electrode on the organic light emitting layer, and forming a second passivation layer on the second electrode; and forming an encapsulation layer on the second passivation layer, forming a color filter on the encapsulation layer, and electrically connecting the first auxiliary electrode, the second auxiliary electrode, and the second electrode to each other.

The step of electrically connecting the first auxiliary electrode, the second auxiliary electrode, and the second electrode to each other may include irradiating a laser to the first auxiliary electrode and the second auxiliary electrode from a lower portion of the substrate.

The forming of the planarization layer may further include forming a second concave-convex pattern in addition to the first concave-convex pattern.

In another aspect, a method of manufacturing an organic light emitting display device according to an embodiment of the present invention includes the steps of forming a semiconductor layer on a substrate, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, and a gate electrode forming an interlayer insulating film on the interlayer insulating film, forming a source electrode, a drain electrode, and a first auxiliary electrode on the interlayer insulating film, forming a first passivation film on the source electrode and the drain electrode, and forming a planarization film on the first passivation film; forming a contact hole exposing a portion of the first auxiliary electrode through the first passivation layer and the planarization layer; forming the first electrode and the second auxiliary electrode in the planarization layer; and forming a bank on the first electrode; forming a third concave-convex pattern on the second auxiliary electrode, forming an organic light emitting layer on the first electrode and the bank, forming a second electrode on the organic light emitting layer, and forming a second passivation layer on the second electrode; The method may include forming an encapsulation layer on the second passivation layer, forming a color filter on the encapsulation layer, and electrically connecting the first auxiliary electrode, the second auxiliary electrode, and the second electrode to each other.

The forming of the third concave-convex pattern may be performed simultaneously with the forming of the bank on the first electrode.

The organic light emitting diode display according to an embodiment of the present invention may include a concave-convex pattern formed on the auxiliary electrode in the auxiliary electrode contact region.

That is, when a contact between the auxiliary electrode and the second electrode is formed by irradiating the laser, the thermal energy of the laser may be concentrated at a desired position in the contact area of the auxiliary electrode by the concave-convex pattern. Accordingly, the contact between the auxiliary electrode and the second electrode can be stably formed, and the laser irradiation escapes the auxiliary electrode contact area, thereby preventing damage to an unwanted area or a defective phenomenon in which the contact is not made properly. can be prevented

In addition, by lowering the resistance of the second electrode through the application of the auxiliary electrode in the organic light emitting diode display, power consumption of the organic light emitting display may be reduced and luminance may be improved.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

Since the content of the invention described in the problems to be solved above, the means for solving the problems, and the effects do not specify the essential characteristics of the claims, the scope of the claims is not limited by the matters described in the content of the invention.

1 is a schematic plan view of an organic light emitting diode display according to an exemplary embodiment of the present invention.
2 is a cross-sectional view of an organic light emitting diode display according to an exemplary embodiment.
3 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment.
4 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment.
5 is a schematic plan view of an organic light emitting diode display according to another exemplary embodiment.
6A to 6F are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.
7A and 7B are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment.
8A and 8B are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the art to which the present invention pertains It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are exemplary, and thus the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description. In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between the two parts unless 'directly' is used.

Also, although the first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, the present invention will be described in detail with reference to the drawings.

1 is a schematic plan view of an organic light emitting diode display 100 according to an exemplary embodiment of the present invention.

Referring to FIG. 1 , an organic light emitting diode display 100 according to an embodiment of the present invention includes a plurality of sub-pixel areas defined by a gate line GL and a data line DL formed in a matrix shape to cross each other. Each of the plurality of sub-pixel areas may include a light-emitting area 110 , a non-emission area 120 , and an auxiliary electrode contact area 130 formed in the non-emission area 120 .

A thin film transistor and an organic light emitting diode (OLED) are disposed in the light emitting region 110 , and an auxiliary electrode formed of a material having a lower resistance than that of the second electrode in order to lower the resistance of the second electrode in the non-emission region 120 . (not shown) may be placed.

The auxiliary electrode contact area 130 formed in the non-emission area 120 is an auxiliary electrode by irradiating a laser to the auxiliary electrode contact area 130 from the bottom of the substrate to melt the metal electrode material with the thermal energy of the instantaneous laser. A region for forming a contact between the second electrode and the second electrode.

Also, as shown in FIG. 1 , a laser is selectively applied to a plurality of auxiliary electrode contact areas 130 among the plurality of auxiliary electrode contact areas 130 formed in the organic light emitting diode display 100 according to the exemplary embodiment of the present invention. It is possible to form a contact between the auxiliary electrode and the second electrode by irradiating it.

As shown in FIG. 1 , the auxiliary electrode contact region 130 formed in the non-emission region 120 may be formed in every three sub-pixel regions in a direction parallel to the gate line GL, but is not limited thereto. It is possible to form for each arbitrary plurality of sub-pixel areas.

Also, the auxiliary electrode contact region 130 may be formed in each sub-pixel region in a direction parallel to the data line DL, but is not limited thereto, and may be formed in any plurality of sub-pixel regions.

Also, as shown in FIG. 1 , the auxiliary electrode contact region 130 may include a concave-convex pattern 140 formed in the auxiliary electrode contact region 130 .

As described above, the auxiliary electrode contact region 130 formed in the non-emission region within the sub-pixel region may include a pattern portion.

That is, the pattern portion formed in the auxiliary electrode contact region 130 means the concave-convex pattern 140 , and the first concave-convex pattern or the first concave-convex pattern formed on the first auxiliary electrode described in each embodiment of the present invention below. The first concave-convex pattern and the second concave-convex pattern formed on the auxiliary electrode, or the third concave-convex pattern formed on the second auxiliary electrode.

In addition, the concave-convex pattern 140 may be configured in the form of a plurality of lines when viewed in a plan view, and a laser is irradiated to the auxiliary electrode contact region 130 under the substrate to form a space between the auxiliary electrode and the second electrode. When the contact is formed, the thermal energy of the laser is concentrated on a desired position of the auxiliary electrode contact region 130 so that a contact between the auxiliary electrode and the second electrode can be stably formed.

In the organic light emitting diode display 100 according to the embodiment of the present invention, when the laser is irradiated to the auxiliary electrode contact region 130 formed in the non-emission region 120 from the lower portion of the substrate, the concave-convex pattern 140 is Depending on the size of the laser beam to be irradiated, some shapes may remain or the shapes may disappear and disappear.

2 is a cross-sectional view of an organic light emitting diode display 200 according to an exemplary embodiment.

An organic light emitting diode display 200 according to an embodiment of the present invention will be described in detail with reference to FIG. 2 .

FIG. 2 is a cross-sectional structure taken along line I-I' of the organic light emitting diode display according to the exemplary embodiment of the present invention shown in FIG. 1 .

As shown in FIG. 2 , the organic light emitting diode display 200 according to the present exemplary embodiment includes a substrate 211 , a semiconductor layer 212 , a gate insulating layer 213 , a gate electrode 214 , an interlayer insulating layer 215 , and a source electrode. 216a, the drain electrode 216b, the first auxiliary electrode 217, the first passivation layer 218, the uneven pattern 219, the planarization layer 220, the contact hole 221, the first electrode 222, It includes a second auxiliary electrode 223 , a bank 224 , an organic emission layer 225 , a second electrode 226 , a second passivation layer 227 , an encapsulation layer 228 , and a color filter 229 .

The substrate 211 may be made of a material of glass, plastic, quartz, silicon, or metal, and may also be made of a transparent material.

The thin film transistor includes a semiconductor layer 212 , a gate electrode 214 , a source electrode 216a , and a drain electrode 216b .

The semiconductor film 212 is formed on the substrate 211 . The semiconductor film 212 may be formed of an amorphous silicon film, a polycrystalline silicon film obtained by crystallizing amorphous silicon, or a metal oxide film such as an indium gallium zinc oxide film (IGZO).

A buffer layer (not shown) may be further formed between the substrate 211 and the semiconductor layer 212 . The buffer layer may be formed to protect the thin film transistor from impurities such as alkali ions leaking from the substrate 211 when the semiconductor layer 212 is crystallized.

A gate insulating film 213 is formed between the semiconductor film 212 and the gate electrode 214 . An interlayer insulating layer 215 is formed on the gate electrode 214 and the gate insulating layer 213 . In addition, a planarization layer 220 is formed on the thin film transistor.

A semiconductor layer contact hole exposing a portion of the semiconductor layer 212 is formed in the gate insulating layer 213 and the interlayer insulating layer 215 , and the source electrode 216a and the drain electrode 216b are connected to the semiconductor layer through the semiconductor layer contact hole. It is connected to the membrane 212 .

The first auxiliary electrode 217 is formed simultaneously with the source electrode 216a and the drain electrode 216b, and may be formed of the same material as the source electrode 216a and the drain electrode 216b.

A first passivation layer 218 is formed on the source electrode 216a, the drain electrode 216b, and the first auxiliary electrode 217 . The first passivation layer 218 may be formed of an inorganic insulating material such as silicon _{oxide (SiO 2 ) or silicon nitride (SiNx).}

In the case of the organic light emitting diode display 200 according to the present embodiment, the concave-convex pattern is formed on the first auxiliary electrode 217 at the same time as the first passivation layer 218 and is made of the same material as the first passivation layer 218 . (219) is formed.

The concave-convex pattern 219 is formed by irradiating a laser to the auxiliary electrode contact area under the substrate to form a contact between the auxiliary electrode and the second electrode. It serves to stably form a contact between the auxiliary electrode and the second electrode.

A planarization layer 220 is formed on the first passivation layer 218 and the concave-convex pattern 219 . The planarization layer 220 may be made of an organic insulating material, for example, photo acryl or benzocyclobutene (BCB) so that a flat surface may be achieved without being affected by a step difference between the lower components.

Also, a contact hole 221 is formed through the planarization layer 220 to expose a portion of the first auxiliary electrode 217 and the concave-convex pattern 219 to be connected to the second electrode 226 .

An organic light emitting diode (OLED) including a first electrode 222 , an organic emission layer 225 , and a second electrode 226 is formed on the planarization layer 220 . In this case, the organic light emitting diode OLED is electrically connected to the thin film transistor.

More specifically, a drain contact hole exposing the drain electrode 216b of the thin film transistor is formed in the planarization film 220 , and the first electrode 222 of the organic light emitting diode OLED is connected through the drain contact hole. It is connected to the drain electrode 216b of the thin film transistor.

The first electrode 222 is an electrode that supplies a current (or voltage) to the organic light emitting layer 225 , and defines a light emitting region of a predetermined area.

Also, the first electrode 222 serves as an anode. Accordingly, the first electrode 222 is made of a transparent conductive material having a relatively large work function, for example, the transparent conductive material is indium tin oxide (ITO) or indium zinc oxide (IZO). ) may be included.

And, in order to improve the reflection efficiency, the first electrode 222 may further include a reflective film (not shown) made of a metal material having high reflection efficiency at a lower portion, for example, the metal material is silver (Ag), Aluminum (Al) and compounds thereof may be included.

The second auxiliary electrode 223 is formed simultaneously with the first electrode 222 , and may be formed of the same material as the first electrode 222 .

A bank 224 for exposing a portion of the first electrode 22 and forming an opening is formed on the first electrode 222 . The bank 224 defines a light emitting area of the organic light emitting diode display and prevents light leakage in the non-emission area.

The organic emission layer 225 is formed between the first electrode 222 and the second electrode 226 . The organic emission layer 225 emits light by combining holes supplied from the first electrode 222 and electrons supplied from the second electrode 226 .

Although not specifically illustrated in FIG. 2 , the organic emission layer 225 is a hole injection layer (HIL), a hole transporting layer (HTL), an emission layer (EML), and an electron transporting layer (electron transporting layer). : ETL) and an electron injection layer (EIL).

The hole injection layer HIL is positioned on the first electrode 222 . The hole injection layer (HIL) may serve to facilitate hole injection, and may include HATCN and cupper phthalocyanine (CuPc), poly(3,4)-ethylenedioxythiophene (PEDOT), polyaniline (PANI), and N,N (N,N). -dinaphthyl-N,N'-diphenylbenzidine) may consist of any one or more selected from the group consisting of, but is not limited thereto.

The hole transport layer HTL is disposed on the hole injection layer HIL. The hole transport layer (HTL) serves to facilitate the transport of holes, and NPD (N,N-dinaphthyl-N,N'-diphenylbenzidine) Any one selected from the group consisting of N'-bis-(phenyl)-benzidine), s-TAD and MTDATA (4,4',4"-Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine) It may be made as above, but is not limited thereto.

The light emitting layer EML is positioned on the hole transport layer HTL, is formed between the hole transport layer HTL and the electron transport layer ETL, and the holes supplied from the first electrode 222 and the holes supplied from the second electrode 226 are provided. White light is emitted by the bonding of electrons.

The electron transport layer ETL is disposed on the emission layer EML. The thickness of the electron transport layer (ETL) may be adjusted in consideration of electron transport characteristics. The electron transport layer ETL may serve to transport and inject electrons, and the electron injection layer EIL may be separately formed on the electron transport layer ETL.

The electron transport layer (ETL) plays a role in smoothing electron transport. Alq3 (tris(8-hydroxyquinolino)aluminum), PBD, TAZ, spiro-PBD, BAlq, Liq(lithium quinolate), BMB-3T, PF- It may consist of any one or more selected from the group consisting of 6P, TPBI, COT and SAlq, but is not limited thereto.

The electron injection layer (EIL) may include, but is not limited to, Alq3 (tris(8-hydroxyquinolino)aluminum), PBD, TAZ, spiro-PBD, BAlq, or SAlq.

Here, the structure is not limited according to the embodiment of the present invention, and at least one of the hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL), and the electron injection layer (EIL) may be omitted. have.

In addition, it is also possible to configure the hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL), and the electron injection layer (EIL) as two or more layers.

The second electrode 226 is formed on the organic emission layer 225 to provide electrons to the organic emission layer 225 and serves as a cathode. The second electrode 226 is made of a transparent conductive material, for example, the transparent conductive material may include ITO or IZO.

In addition, the second electrode 226 may further include a thin metal film (not shown) made of a metal material having a low work function on the side in contact with the organic light emitting layer 225 , for example, the metal material is magnesium (Mg), Silver (Ag) and alloys thereof may be included.

In the case of the top emission type organic light emitting display device, when the second electrode 226 is made of metal, it has to have a low work function and must be formed thin because translucency must be satisfied.

A second passivation layer 227 and an encapsulation layer 228 are formed on the second electrode 226 . The encapsulation layer 228 prevents moisture and oxygen from penetrating into the organic light emitting diode (OLED). The encapsulation layer 228 may be formed of an inorganic insulating material such as aluminum oxide (AlOx), silicon oxynitride (SiON), silicon nitride (SiNx), or silicon oxide (SiO ₂ ), benzocyclobutene, or photo acryl. It may be formed as a single layer of an organic insulating material, such as, or formed in a structure in which an inorganic insulating material and an organic insulating material are stacked.

A color filter 229 is formed on the encapsulation layer 228, and the color filter 229 is formed by depositing red, green, and blue pigments in each sub-pixel area and patterning them, and forming a black matrix (BM). may include In addition, in the case of the white sub-pixel area, a separate color filter may not be formed.

After the organic light emitting diode display 200 is formed in this way, the first auxiliary electrode is irradiated from the lower portion of the substrate 211 to the auxiliary electrode contact region where the first auxiliary electrode 217 and the second auxiliary electrode 223 are formed, thereby forming the first auxiliary electrode. An electrical contact is formed between the electrode 217 and the second auxiliary electrode 223 and the second electrode 226 .

As can be seen in FIG. 2 , the laser-irradiated area among the auxiliary electrode contact areas where the first auxiliary electrode 217 and the second auxiliary electrode 223 are formed uses the thermal energy of the laser to generate the first auxiliary electrode 217 and the first auxiliary electrode 217 and the second auxiliary electrode 223 . The second auxiliary electrode 223 is electrically connected to the second electrode while being diffused and moved to the outer portion of the laser irradiation area.

The first auxiliary electrode 217 and the second auxiliary electrode 223 are electrically connected to the second electrode 226 through the outer edge of the contact hole 221 , and the first auxiliary electrode 217 in the contact hole 221 . ) and the second auxiliary electrode 223 are connected to the second electrode 226 , the resistance of the second electrode 226 may be lowered around the contact hole 221 .

In addition, although not specifically shown in the detailed description and drawings of the present invention, in addition to the first auxiliary electrode 217 and the second auxiliary electrode 223 , it is formed at the same time as the gate electrode 214 and is made of the same material as the gate electrode 214 . It is also possible to form the formed third auxiliary electrode (not shown) so that the first auxiliary electrode 217 , the second auxiliary electrode 223 , and the third auxiliary electrode are electrically connected to the second electrode 226 . .

As described above, when the laser is irradiated to the auxiliary electrode contact region, the shape of the concave-convex pattern 219 may remain or disappear depending on the size of the irradiated laser beam.

As such, when the concave-convex pattern 219 forms a contact between the first auxiliary electrode 217 and the second auxiliary electrode 223 and the second electrode 226 by irradiating a laser from the bottom of the substrate to the auxiliary electrode contact region, By concentrating the thermal energy of the laser to a position where a contact is to be made, it serves to stably form a contact between the first auxiliary electrode 217 and the second auxiliary electrode 223 and the second electrode 226 .

3 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment.

In the description of the present embodiment, a description of the same or corresponding components as in the previously described embodiment will be omitted.

Referring to FIG. 3 , an organic light emitting diode display 300 according to another exemplary embodiment includes a substrate 311 , a semiconductor layer 312 , a gate insulating layer 313 , a gate electrode 314 , and an interlayer insulating layer 315 . , source and drain electrodes 316a and 316b , first auxiliary electrode 317 , first passivation layer 318 , first uneven pattern 319 , planarization layer 320 , contact hole 321 , second unevenness The pattern 322 includes a first electrode 323 , a second auxiliary electrode 324 , a bank 325 , an organic emission layer 326 , a second electrode 327 , a second passivation layer 328 , an encapsulation layer 329 , and It is configured to include a color filter 330 .

The substrate 311 may be made of a material of glass, plastic, quartz, silicon, or metal, and may also be made of a transparent material.

The thin film transistor includes a semiconductor layer 312 , a gate electrode 314 , a source electrode 316a , and a drain electrode 316b .

The first auxiliary electrode 317 is formed simultaneously with the source electrode 316a and the drain electrode 316b, and may be formed of the same material as the source electrode 316a and the drain electrode 316b.

A first passivation layer 318 is formed on the source electrode 316a, the drain electrode 316b, and the first auxiliary electrode 317 . The first passivation layer 318 may be formed of an inorganic insulating material such as silicon _{oxide (SiO 2 ) or silicon nitride (SiNx).}

A first concave-convex pattern 319 formed at the same time as the first passivation layer 318 and made of the same material as the first passivation layer 318 is formed on the first auxiliary electrode 317 .

A planarization layer 320 is formed on the first passivation layer 318 and the first concavo-convex pattern 319 . The planarization layer 220 may be made of an organic insulating material, for example, photoacryl or benzocyclobutene (BCB) so that a flat surface may be achieved without being affected by a step difference between the lower components.

In the case of the organic light emitting diode display 300 according to the present embodiment, the second uneven pattern ( 322) can be formed.

Also, a contact hole 321 is formed through the planarization layer 320 to expose a portion of the first auxiliary electrode 317 , the first concave-convex pattern 319 , and the second concavo-convex pattern 322 .

An organic light emitting diode OLED including a first electrode 323 , an organic emission layer 326 , and a second electrode 327 is formed on the planarization layer 320 and the second concave-convex pattern 322 . In this case, the organic light emitting diode OLED is electrically connected to the thin film transistor.

The first electrode 323 supplies a current (or voltage) to the organic light emitting layer 326 and defines a light emitting region of a predetermined area.

Also, the first electrode 323 serves as an anode. Accordingly, the first electrode 323 is made of a transparent conductive material having a relatively large work function, for example, the transparent conductive material is indium tin oxide (ITO) or indium zinc oxide (IZO). ) may be included.

The second auxiliary electrode 324 is formed simultaneously with the first electrode 323 , and may be formed of the same material as the first electrode 323 .

A bank 325 exposing a portion of the first electrode 323 and forming an opening is formed on the first electrode 323 .

The organic emission layer 326 is formed between the first electrode 323 and the second electrode 327 . The organic emission layer 326 emits light by combining holes supplied from the first electrode 323 and electrons supplied from the second electrode 327 .

Although not specifically illustrated in FIG. 3 , the organic emission layer 326 is a hole injection layer (HIL), a hole transporting layer (HTL), an emission layer (EML), and an electron transporting layer (electron transporting layer). : ETL) and an electron injection layer (EIL).

The second electrode 327 is formed on the organic emission layer 326 to provide electrons to the organic emission layer 326 and serves as a cathode. The second electrode 327 is made of a transparent conductive material, for example, the transparent conductive material may include indium tin oxide (ITO) or indium zinc oxide (IZO).

A second passivation layer 328 and an encapsulation layer 329 are formed on the second electrode 327 . The encapsulation layer 329 prevents penetration of moisture and oxygen into the organic light emitting diode (OLED).

A color filter 330 is formed on the encapsulation layer 329 , and the color filter 330 is formed by depositing red, green, and blue pigments in each sub-pixel area and patterning them. In addition, in the case of the white sub-pixel area, a separate color filter may not be formed.

After the organic light emitting diode display 300 according to the present embodiment is formed as described above, a laser is applied to the auxiliary electrode contact region where the first auxiliary electrode 317 and the second auxiliary electrode 324 are formed from the lower portion of the substrate 311 . By irradiating, electrical contact between the first auxiliary electrode 317 and the second auxiliary electrode 324 and the second electrode 327 is formed.

As can be seen in FIG. 3 , the laser-irradiated area among the auxiliary electrode contact areas where the first auxiliary electrode 317 and the second auxiliary electrode 324 are formed uses the thermal energy of the laser to generate the first auxiliary electrode 317 and the second auxiliary electrode 317 and the second auxiliary electrode 317 . The second auxiliary electrode 324 is electrically connected to the second electrode 327 as it diffuses and moves to the outer portion of the laser irradiation area.

As described above, when the laser is irradiated to the auxiliary electrode contact region, the first concave-convex pattern 319 and the second concave-convex pattern 322 may have some shapes remaining depending on the size of the irradiated laser beam or It may disappear and disappear.

As described above, the first and second concave-convex patterns 319 and 322 are formed by irradiating a laser beam from the lower portion of the substrate to the auxiliary electrode contact region to form the first auxiliary electrode 317 , the second auxiliary electrode 324 , and the second electrode. When the contact 327 is formed, the contact between the first auxiliary electrode 317 and the second auxiliary electrode 324 and the second electrode 327 is stable by focusing the thermal energy of the laser at the position where the contact should be made. It plays a role in making it possible to form

4 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment.

In the description of the present embodiment, a description of the same or corresponding components as in the previously described embodiment will be omitted.

As shown in FIG. 4 , an organic light emitting diode display 400 according to another exemplary embodiment includes a substrate 411 , a semiconductor layer 412 , a gate insulating layer 413 , a gate electrode 414 , and an interlayer insulating layer. 415 , the source and drain electrodes 416a and 416b , the first auxiliary electrode 417 , the first passivation layer 418 , the planarization layer 419 , the contact hole 420 , the first electrode 421 , the first 2 auxiliary electrode 422 , bank 423 , third concave-convex pattern 424 , organic emission layer 425 , second electrode 426 , second passivation layer 427 , encapsulation layer 428 , and color filter 429 . ) is included.

The substrate 411 may be made of a material of glass, plastic, quartz, silicon, or metal, and may also be made of a transparent material.

The thin film transistor includes a semiconductor layer 412 , a gate electrode 414 , a source electrode 416a , and a drain electrode 416b .

The first auxiliary electrode 417 is formed simultaneously with the source electrode 416a and the drain electrode 416b, and may be formed of the same material as the source electrode 416a and the drain electrode 416b.

A first passivation layer 418 is formed on the source electrode 416a , the drain electrode 416b , and the first auxiliary electrode 417 . The first passivation layer 418 may be formed of an inorganic insulating material such as silicon _{oxide (SiO 2 ) or silicon nitride (SiNx).}

A planarization layer 419 is formed on the first passivation layer 418 . The planarization layer 419 may be made of an organic insulating material, for example, photoacryl or benzocyclobutene (BCB) so that a flat surface may be achieved without being affected by the step difference between the lower components.

Also, a contact hole 420 is formed through the planarization layer 419 to expose a portion of the first auxiliary electrode 417 .

An organic light emitting diode (OLED) including a first electrode 421 , an organic emission layer 425 , and a second electrode 426 is formed on the planarization layer 419 . In this case, the organic light emitting diode OLED is electrically connected to the thin film transistor.

The first electrode 421 supplies a current (or voltage) to the organic light emitting layer 425 and defines a light emitting area of a predetermined area.

The second auxiliary electrode 422 is formed simultaneously with the first electrode 421 , and may be formed of the same material as the first electrode 421 .

A bank 423 exposing a portion of the first electrode 421 and forming an opening is formed on the first electrode 421 .

In the case of the organic light emitting diode display 400 according to the present exemplary embodiment, the third concave-convex pattern 424 is formed simultaneously with the bank 423 on the second auxiliary electrode 422 and made of the same material as the bank 423 . ) can be formed.

The organic emission layer 425 is formed between the first electrode 421 and the second electrode 426 . The organic emission layer 425 emits light by combining holes supplied from the first electrode 421 and electrons supplied from the second electrode 426 .

The second electrode 426 is formed on the organic emission layer 425 to provide electrons to the organic emission layer 425 and serves as a cathode.

A second passivation layer 427 and an encapsulation layer 428 are formed on the second electrode 426 . The encapsulation layer 428 prevents moisture and oxygen from penetrating into the organic light emitting diode (OLED).

A color filter 429 is formed on the encapsulation layer 428 , and the color filter 429 is formed by depositing red, green, and blue pigments in each sub-pixel area and patterning them. In addition, in the case of the white sub-pixel area, a separate color filter may not be formed.

After the organic light emitting diode display 400 according to the present exemplary embodiment is formed as described above, a laser is applied to the auxiliary electrode contact region where the first auxiliary electrode 417 and the second auxiliary electrode 422 are formed from the lower portion of the substrate 411 . By irradiating, electrical contact between the first auxiliary electrode 417 and the second auxiliary electrode 422 and the second electrode 426 is formed.

As can be seen in FIG. 4 , the laser-irradiated region among the auxiliary electrode contact regions in which the first auxiliary electrode 417 and the second auxiliary electrode 422 are formed is irradiated with the first auxiliary electrode 417 and the second auxiliary electrode 417 by the thermal energy of the laser. The second auxiliary electrode 422 is electrically connected to the second electrode 426 while being diffused and moved to the outer portion of the laser irradiation area.

As described above, when a laser is irradiated to the auxiliary electrode contact region, a portion of the shape of the third concave-convex pattern 424 may remain or disappear depending on the size of the irradiated laser beam. .

As such, the third concave-convex pattern 424 forms a contact between the first auxiliary electrode 417 and the second auxiliary electrode 422 and the second electrode 426 by irradiating a laser from the lower portion of the substrate to the auxiliary electrode contact region. When the heat energy of the laser is concentrated at the position where the contact is to be made, it serves to stably form the contact between the first auxiliary electrode 417 and the second auxiliary electrode 422 and the second electrode 426 . do.

5 is a schematic plan view of an organic light emitting diode display according to another exemplary embodiment.

In the description of the present embodiment, a description of the same or corresponding components as in the previously described embodiment will be omitted.

As shown in FIG. 5 , in the organic light emitting diode display 500 according to the exemplary embodiment of the present invention, a plurality of subs defined by a gate line GL and a data line DL intersecting each other to form a matrix. It has a pixel area, and each of the plurality of sub-pixel areas may include a light-emitting area 510 , a non-emission area 520 , and an auxiliary electrode contact area 530 formed in the non-emission area 520 .

The auxiliary electrode contact area 530 may include a concave-convex pattern 540 formed in the auxiliary electrode contact area 530 .

As can be seen in FIG. 5 , the concave-convex pattern 540 in this embodiment may be configured in the form of a matrix when viewed in a plan view, and a laser beam is applied to the auxiliary electrode contact region 530 from the bottom of the substrate. When forming a contact between the auxiliary electrode and the second electrode by irradiating it, the thermal energy of the laser is concentrated at a desired position in the auxiliary electrode contact region 530 so that the contact between the auxiliary electrode and the second electrode is stably formed. can make it happen

Also, as shown in FIG. 5 , a laser is selectively applied to a plurality of auxiliary electrode contact areas 530 among a plurality of auxiliary electrode contact areas 530 formed in the organic light emitting diode display 500 according to the exemplary embodiment of the present invention. It is possible to form a contact between the auxiliary electrode and the second electrode by irradiating it.

Also, as described above, when a laser is irradiated to the auxiliary electrode contact region 530 , the shape of the concave-convex pattern 540 may remain or disappear depending on the size of the irradiated laser beam. .

6A to 6F are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.

A method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 6A to 6F .

The same reference numerals are assigned to the same components, and detailed descriptions of the materials of each component will be omitted.

Referring to FIG. 6A , a semiconductor layer 612 , a gate insulating layer 613 , a gate electrode 614 , an interlayer insulating layer 615 , a source electrode 616a , and a drain electrode 616b are sequentially formed on a substrate 611 . to form

In addition, the source and drain electrodes 616a and 616b are formed, and at the same time, the first auxiliary electrode 617 is formed in the non-emission area of the sub-pixel area of the organic light emitting diode display device, the source electrode 616a and the drain electrode 616b are formed. formed of the same material.

The semiconductor layer 612 and the gate electrode 614 are formed by stacking a predetermined material on the substrate 611, applying photo resist (PR), exposing and developing to form a mask pattern, and forming the mask pattern. It may be formed by etching a predetermined region of the material using a lithography method, and then patterning it through a so-called photolithography process in which the mask pattern is removed.

However, it is not necessarily limited thereto, and screen printing, inkjet printing, gravure printing, gravure offset printing, reverse offset printing ( The semiconductor layer 612 and the gate electrode 614 may be formed by directly patterning the semiconductor layer 612 and the gate electrode 614 by a printing process such as reverse offset printing, flexo printing, or microcontact printing.

The pattern forming process for each configuration to be described below may also be performed using a photolithography process or a printing process depending on the constituent material, and a repeated description thereof will be omitted.

A semiconductor layer contact hole is formed in the gate insulating layer 613 and the interlayer insulating layer 615 . The semiconductor layer contact hole is formed by etching the gate insulating layer 613 and the interlayer insulating layer 615 so that a portion of the semiconductor layer 612 is exposed.

The source and drain electrodes 616a and 616b are connected to the semiconductor layer 612 through the semiconductor layer contact hole, and are formed by patterning to be spaced apart from the gate electrode 614 .

Next, referring to FIG. 6B , a first passivation layer 618 is formed on the source electrode 616a and the drain electrode 616b , the first passivation layer 618 is formed, and at the same time, a sub-pixel of the organic light emitting diode display device. A concave-convex pattern 619 is formed on the first auxiliary electrode 617 using the same material as the first passivation layer 618 in the non-emission region of the region.

Next, referring to FIG. 6C , a planarization layer 620 is formed on the first passivation layer 618 and the concavo-convex pattern 619 . In addition, a drain contact hole is formed in the planarization layer 620 . The drain contact hole is formed by etching the planarization layer 620 so that a part of the drain electrode 616b is exposed.

In addition, the planarization layer 620 is etched to expose a portion of the first auxiliary electrode 617 and the concave-convex pattern 619 to form a contact hole 621 .

A first electrode 622 and a second auxiliary electrode 623 are formed on the planarization layer 620 . The first electrode 622 is formed by patterning so as to be connected to the drain electrode 616b through the drain contact hole.

In addition, at the same time as forming the first electrode 622 , a second auxiliary electrode 623 is formed of the same material as that of the first electrode 622 in the non-emission area of the sub-pixel area of the organic light emitting diode display. The second auxiliary electrode 623 is formed by patterning to be spaced apart from the first electrode 622 .

Next, referring to FIG. 6D , a bank 224 having an opening on the first electrode 622 is formed. The bank 224 forms an opening by depositing a predetermined material on the entire surface of the substrate 611 and then removing a predetermined area of the deposited material through an etching process.

Next, an organic emission layer 625 is formed on the entire surface of the substrate 611 . The organic emission layer 625 is formed to be electrically connected to the first electrode 622 through the opening. Also, the organic emission layer 625 is formed on the first auxiliary electrode 617 and the second auxiliary electrode 623 in the same manner.

The organic light emitting layer 625 is formed using thermal vacuum deposition. Thermal vacuum deposition causes the organic material to be incident perpendicular to the substrate 611 .

Next, a second electrode 626 is formed on the entire surface of the substrate 611 . The second electrode 626 is formed using thermal vacuum deposition of a desired metallic material. In this case, a predetermined metal material is vertically incident to the substrate 211 and deposited on the organic emission layer 225 .

Next, referring to FIG. 6E , a second passivation layer 627 is formed on the second electrode 626 . After an encapsulation film 628 is formed on the second passivation film 627 , a color filter 629 is formed on the encapsulation film 628 .

Next, referring to FIG. 6F , in the auxiliary electrode contact area where the first auxiliary electrode 617 and the second auxiliary electrode 623 are formed in the non-emission area of the sub-pixel area of the organic light emitting diode display under the substrate 611 . The first auxiliary electrode 217 , the second auxiliary electrode 223 , and the second electrode 226 are electrically connected to each other by irradiating the laser.

By irradiating a laser to the auxiliary electrode contact region, a metal material may be melted with instantaneous thermal energy to form an electrical contact between the first auxiliary electrode 617 , the second auxiliary electrode 623 , and the second electrode 626 . .

That is, when a contact between the auxiliary electrode and the second electrode is formed by irradiating the laser as described above, the thermal energy of the laser is transferred to the auxiliary electrode contact region by the concave-convex pattern 619 formed on the first auxiliary electrode 617 . By focusing on a desired position of It is possible to prevent damage to an area or occurrence of a defect in which a contact is not made properly.

7A and 7B are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment.

First, referring to FIG. 7A , a semiconductor film 712 , a gate insulating film 713 , a gate electrode 714 , an interlayer insulating film 715 , a source electrode 716a and a drain electrode 716b are sequentially formed on a substrate 711 . to form with

In addition, while forming the source and drain electrodes 716a and 716b, the first auxiliary electrode 717 is formed in the non-emission area of the sub-pixel area of the organic light emitting diode display, and the source electrode 716a and the drain electrode 716b are formed. formed of the same material.

A semiconductor layer contact hole is formed in the gate insulating layer 713 and the interlayer insulating layer 715 . The semiconductor layer contact hole is formed by etching the gate insulating layer 713 and the interlayer insulating layer 715 so that a part of the semiconductor layer 712 is exposed.

The source and drain electrodes 716a and 716b are connected to the semiconductor layer 712 through the semiconductor layer contact hole, and are formed by patterning to be spaced apart from the gate electrode 714 .

A first passivation layer 718 is formed on the source electrode 716a and the drain electrode 716b and the first passivation layer 718 is formed, and at the same time, a first passivation layer is formed in the non-emission area of the sub-pixel area of the organic light emitting diode display. A first concave-convex pattern 719 is formed on the first auxiliary electrode 717 using the same material as the passivation layer 718 .

A planarization layer 720 is formed on the first passivation layer 718 and the first concavo-convex pattern 719 . In addition, a drain contact hole is formed in the planarization layer 720 . The drain contact hole is formed by etching the planarization layer 720 so that a part of the drain electrode 716b is exposed.

In addition, a second uneven pattern 722 formed at the same time as the planarization layer 720 and made of the same material as the planarization layer 720 is formed on the first uneven pattern 719 .

In addition, a contact hole 721 is formed by etching the planarization layer 720 so that portions of the first auxiliary electrode 717 , the first concave-convex pattern 719 , and the second concave-convex pattern 722 are exposed.

A first electrode 723 is formed on the planarization layer 720 . The first electrode 723 is formed by patterning to be connected to the drain electrode 716b through the drain contact hole.

In addition, at the same time as forming the first electrode 723 , a second auxiliary electrode 724 is formed of the same material as the first electrode 723 in the non-emission area of the sub-pixel area of the organic light emitting diode display. The second auxiliary electrode 724 is formed by patterning to be spaced apart from the first electrode 723 .

A bank 725 having an opening is formed on the first electrode 723 .

Next, an organic emission layer 726 is formed on the entire surface of the substrate 711 . The organic emission layer 726 is formed to be electrically connected to the first electrode 723 through the opening.

Next, a second electrode 727 is formed on the entire surface of the substrate 711 . Then, a second passivation layer 728 is formed on the second electrode 727 . After an encapsulation layer 729 is formed on the second passivation layer 728 , a color filter 730 is formed on the encapsulation layer 729 .

Next, referring to FIG. 7B , in the auxiliary electrode contact area where the first auxiliary electrode 717 and the second auxiliary electrode 724 are formed in the non-emission area of the sub-pixel area of the organic light emitting diode display under the substrate 711 . The first auxiliary electrode 717 , the second auxiliary electrode 724 , and the second electrode 727 are electrically connected to each other by irradiating the laser.

That is, by irradiating a laser to the auxiliary electrode contact region, the metal material is melted with instantaneous thermal energy to form an electrical contact between the first auxiliary electrode 717 , the second auxiliary electrode 724 , and the second electrode 727 . can

At this time, the first and second concave-convex patterns 719 and 722 allow the laser thermal energy to be concentrated at a position where a contact is to be made, so that the first auxiliary electrode 717 and the second auxiliary electrode 724 and the second By serving to ensure that the contact of the electrode 727 is stably formed, it is possible to prevent an unwanted area from being damaged by laser irradiation outside the auxiliary electrode contact area, or a defective phenomenon in which the contact is not made properly. have.

8A and 8B are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment.

First, referring to FIG. 8A , a semiconductor film 812 , a gate insulating film 813 , a gate electrode 814 , an interlayer insulating film 815 , a source electrode 816a , and a drain electrode 816b are sequentially formed on a substrate 811 . to form with

In addition, while forming the source and drain electrodes 816a and 816b, the first auxiliary electrode 817 is formed in the non-emission area of the sub-pixel area of the organic light emitting diode display, and the source electrode 816a and the drain electrode 816b are formed. formed of the same material.

A semiconductor layer contact hole is formed in the gate insulating layer 813 and the interlayer insulating layer 815 . The semiconductor layer contact hole is formed by etching the gate insulating layer 813 and the interlayer insulating layer 815 so that a portion of the semiconductor layer 812 is exposed.

The source and drain electrodes 816a and 816b are connected to the semiconductor layer 812 through the semiconductor layer contact hole, and are formed by patterning to be spaced apart from the gate electrode 814 .

A first passivation layer 818 is formed on the source electrode 816a and the drain electrode 816b , and a planarization layer 819 is formed on the first passivation layer 818 . Also, a drain contact hole is formed in the planarization layer 819 . The drain contact hole is formed by etching the planarization layer 819 so that a part of the drain electrode 816b is exposed.

Also, a contact hole 820 is formed through the first passivation layer 818 and the planarization layer 819 to expose a portion of the first auxiliary electrode 817 .

A first electrode 821 is formed on the planarization layer 819 . The first electrode 821 is formed by patterning to be connected to the drain electrode 816b through the drain contact hole.

In addition, at the same time as the first electrode 821 is formed, a second auxiliary electrode 822 is formed of the same material as the first electrode 821 in the non-emission area of the sub-pixel area of the organic light emitting diode display. The second auxiliary electrode 822 is formed by patterning to be spaced apart from the first electrode 821 .

A bank 823 having an opening is formed on the first electrode 821 .

In addition, a third concave-convex pattern 824 formed at the same time as the bank 823 and made of the same material as the bank 823 is formed on the second auxiliary electrode 822 .

Next, an organic emission layer 825 is formed on the entire surface of the substrate 811 . The organic emission layer 825 is formed to be electrically connected to the first electrode 821 through the opening.

Next, a second electrode 826 is formed on the entire surface of the substrate 811 . Then, a second passivation layer 827 is formed on the second electrode 826 . After an encapsulation film 828 is formed on the second passivation film 827 , a color filter 829 is formed on the encapsulation film 828 .

Next, referring to FIG. 8B , in the auxiliary electrode contact area where the first auxiliary electrode 817 and the second auxiliary electrode 822 are formed in the non-emission area of the sub-pixel area of the organic light emitting diode display under the substrate 811 . The first auxiliary electrode 817 , the second auxiliary electrode 822 , and the second electrode 826 are electrically connected to each other by irradiating the laser.

That is, by irradiating a laser to the auxiliary electrode contact region, the metal material is melted with instantaneous thermal energy to form an electrical contact between the first auxiliary electrode 817 , the second auxiliary electrode 822 , and the second electrode 826 . can

In this case, the third concave-convex pattern 824 concentrates the thermal energy of the laser to a position where the contact is to be made, so that the contact between the first and second auxiliary electrodes 817 and 822 and the second electrode 826 is stable. It is possible to prevent an unwanted region from being damaged by escaping from the auxiliary electrode contact region by laser irradiation or from occurrence of a defective phenomenon in which contact is not properly made.

The first auxiliary electrode and the second auxiliary electrode, the first electrode spaced apart from the first auxiliary electrode and the second auxiliary electrode, the organic emission layer located on the first electrode, and the second auxiliary electrode located on the organic emission layer facing the first electrode It may include an electrode and a pattern portion formed on any one of the first auxiliary electrode and the second auxiliary electrode.

It may further include a substrate, a semiconductor layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source electrode, a drain electrode, a first passivation layer, a planarization layer, and a bank, and may have a light emitting area and a non-emission area in the sub-pixel area.

The pattern part may be formed of a concave-convex pattern formed on the first auxiliary electrode.

The concave-convex pattern is simultaneously formed when the first passivation layer is formed, and the concave-convex pattern may be formed in a line form or a matrix form.

The pattern part may include a first concave-convex pattern formed on the first auxiliary electrode and a second concave-convex pattern formed on the first concave-convex pattern.

The first concave-convex pattern may be simultaneously formed when the first passivation layer is formed, the second concave-convex pattern may be simultaneously formed when the planarization layer is formed, and the first concave-convex pattern and the second concave-convex pattern may be formed in a line form or a matrix form.

The pattern portion may be formed of a third concave-convex pattern formed on the second auxiliary electrode.

The third concave-convex pattern is simultaneously formed when the bank is formed, and may be formed in a line form or a matrix form.

The first auxiliary electrode and the second auxiliary electrode and the second electrode may include an auxiliary electrode contact region electrically connected to each other.

The first auxiliary electrode and the second auxiliary electrode, the first electrode spaced apart from the first auxiliary electrode and the second auxiliary electrode, the organic emission layer located on the first electrode, and the second auxiliary electrode located on the organic emission layer facing the first electrode The electrode and the first auxiliary electrode and the second auxiliary electrode and the second electrode may include an auxiliary electrode contact region electrically connected to each other.

It may include a pattern portion formed on any one of the first auxiliary electrode and the second auxiliary electrode.

The auxiliary electrode contact region may be formed in a non-emission region within the sub-pixel region.

The first auxiliary electrode may be formed simultaneously with the source electrode and the drain electrode.

The second auxiliary electrode may be formed simultaneously with the first electrode.

The auxiliary electrode contact region includes a contact hole penetrating the first passivation layer and the planarization layer to expose a portion of the first auxiliary electrode, and the first auxiliary electrode and the second auxiliary electrode are electrically connected to the second electrode through the outer edge of the contact hole. can be connected

Forming a semiconductor film on a substrate, forming a gate insulating film on the semiconductor film, forming a gate electrode on the gate insulating film, forming an interlayer insulating film on the gate electrode, and forming a source electrode, a drain electrode and a first auxiliary on the interlayer insulating film Forming an electrode, forming a first passivation layer on the source electrode and the drain electrode, forming a first concave-convex pattern on the auxiliary electrode, forming a planarization film on the first passivation film, and passing the first passivation film through the planarization film Forming an auxiliary electrode and a contact hole exposing a portion of the first concave-convex pattern, forming a first electrode and a second auxiliary electrode on a planarization layer, forming a bank on the first electrode, a first electrode and Forming an organic light emitting layer on the bank, forming a second electrode on the organic light emitting layer, forming a second passivation film on the second electrode, forming an encapsulation layer on the second passivation film, and forming a color filter on the encapsulation layer and electrically connecting the first auxiliary electrode, the second auxiliary electrode, and the second electrode to each other.

The step of electrically connecting the first auxiliary electrode, the second auxiliary electrode, and the second electrode to each other may include irradiating a laser to the first auxiliary electrode and the second auxiliary electrode from a lower portion of the substrate.

The forming of the planarization layer may further include forming a second concave-convex pattern in addition to the first concave-convex pattern.

Forming a semiconductor film on a substrate, forming a gate insulating film on the semiconductor film, forming a gate electrode on the gate insulating film, forming an interlayer insulating film on the gate electrode, and forming a source electrode, a drain electrode and a first auxiliary on the interlayer insulating film forming an electrode, forming a first passivation layer on the source electrode and the drain electrode, forming a planarization layer on the first passivation layer, and a contact hole penetrating the first passivation layer and the planarization layer to expose a part of the first auxiliary electrode. forming a first electrode and a second auxiliary electrode on the planarization film, forming a bank on the first electrode, forming a third concave-convex pattern on the second auxiliary electrode, and on the first electrode and the bank Forming an organic light emitting layer, forming a second electrode on the organic light emitting layer, forming a second passivation layer on the second electrode, forming an encapsulation layer on the second passivation layer, and forming a color filter on the encapsulation layer and electrically connecting the first auxiliary electrode, the second auxiliary electrode, and the second electrode to each other.

The forming of the third concave-convex pattern may be performed simultaneously with the forming of the bank on the first electrode.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

200: organic light emitting display device
211: substrate
212: semiconductor film
213: gate insulating film
214: gate electrode
215: interlayer insulating film
216a: source electrode
216b: drain electrode
217: first auxiliary electrode
218: first protective film
219: uneven pattern
220: planarization film
221: contact hole
222: first electrode
223: second auxiliary electrode
224: bank
225: organic light emitting layer
226: second electrode
227: second shield
228: encapsulation film
229: color filter

Claims (21)

a first auxiliary electrode;
a pattern portion formed on the first auxiliary electrode;
a second auxiliary electrode formed on the pattern part;
a first electrode formed on the same layer as the second auxiliary electrode and spaced apart from the second auxiliary electrode;
an organic light emitting layer positioned on the first electrode and the second auxiliary electrode; and
a second electrode positioned on the organic light emitting layer;
A through hole passing through a central portion is formed in each of the first auxiliary electrode, the pattern portion, the second auxiliary electrode, the organic light emitting layer, and the second electrode positioned on the first auxiliary electrode;
The organic light emitting diode display device to which the first auxiliary electrode, the second auxiliary electrode, and the second electrode are connected through an outer edge of the through hole.
According to claim 1,
The organic light emitting display device,
Board;
a semiconductor film formed on the substrate;
a gate insulating film formed on the semiconductor film;
a gate electrode formed on the gate insulating layer;
an interlayer insulating layer formed on the gate insulating layer and the gate electrode;
a source electrode, a drain electrode, and a first auxiliary electrode formed on the interlayer insulating layer;
a first passivation layer formed on the source electrode and the drain electrode;
the pattern part formed on the first auxiliary electrode;
a planarization layer formed on the first passivation layer and the pattern part;
a first electrode and a second auxiliary electrode formed on the planarization layer; and
a bank formed on the first electrode;
An organic light emitting diode display having a light emitting area and a non-emission area within a sub-pixel area.
3. The method of claim 2,
The pattern portion is an organic light emitting diode display including a concave-convex pattern formed on the first auxiliary electrode.
4. The method of claim 3,
The concave-convex pattern is formed at the same time as the first protective layer is formed,
The concave-convex pattern is an organic light emitting diode display having a line shape or a matrix shape.
4. The method of claim 3,
The pattern portion includes a first concave-convex pattern formed on the first auxiliary electrode; and
and a second concave-convex pattern formed on the first concave-convex pattern.
6. The method of claim 5,
The first concave-convex pattern is formed at the same time as the first protective layer is formed,
The second concave-convex pattern is formed at the same time as the planarization layer is formed,
The first concave-convex pattern and the second concave-convex pattern are formed in a line form or a matrix form.
delete delete 3. The method of claim 2,
and an auxiliary electrode contact region in which the first auxiliary electrode, the second auxiliary electrode, and the second electrode are electrically connected to each other.
a first auxiliary electrode;
a second auxiliary electrode formed on the first auxiliary electrode;
a first electrode formed on the same layer as the second auxiliary electrode and spaced apart from the second auxiliary electrode;
an organic light emitting layer positioned on the first electrode and the second auxiliary electrode;
a second electrode positioned on the organic light emitting layer; and
and an auxiliary electrode contact region in which the first auxiliary electrode, the second auxiliary electrode, and the second electrode are electrically connected to each other;
A through hole passing through a central portion is formed in each of the first auxiliary electrode positioned in the auxiliary electrode contact region, the second auxiliary electrode positioned on the first auxiliary electrode, the organic light emitting layer, and the second electrode;
The first auxiliary electrode, the second auxiliary electrode, and the second electrode are connected to each other through an outer edge of the through hole formed in the auxiliary electrode contact region.
11. The method of claim 10,
The organic light emitting display device,
Board;
a semiconductor film formed on the substrate;
a gate insulating film formed on the semiconductor film;
a gate electrode formed on the gate insulating layer;
an interlayer insulating layer formed on the gate insulating layer and the gate electrode;
a source electrode, a drain electrode, and a first auxiliary electrode formed on the interlayer insulating layer;
a first passivation layer formed on the source electrode, the drain electrode, and the first auxiliary electrode;
a planarization layer formed on the first passivation layer;
a first electrode and a second auxiliary electrode formed on the planarization layer; and
a bank formed on the first electrode;
An organic light emitting diode display having a light emitting area and a non-emission area within a sub-pixel area.
12. The method of claim 11,
and a pattern portion formed on one of the first auxiliary electrode and the second auxiliary electrode.
12. The method of claim 11,
The auxiliary electrode contact region is formed in a non-emission region within the sub-pixel region.
12. The method of claim 2 or 11,
The first auxiliary electrode is formed simultaneously with the source electrode and the drain electrode.
12. The method of claim 2 or 11,
The second auxiliary electrode is formed simultaneously with the first electrode.
12. The method of claim 11,
The auxiliary electrode contact region includes a contact hole penetrating the first passivation layer and the planarization layer and exposing a portion of the first auxiliary electrode,
The first auxiliary electrode and the second auxiliary electrode are electrically connected to the second electrode through an outer edge of the contact hole.
forming a semiconductor film on a substrate;
forming a gate insulating film on the semiconductor film;
forming a gate electrode on the gate insulating layer;
forming an interlayer insulating film on the gate electrode;
forming a source electrode, a drain electrode, and a first auxiliary electrode on the interlayer insulating layer;
forming a first passivation layer on the source electrode and the drain electrode and forming a first concave-convex pattern on the first auxiliary electrode;
forming a planarization layer on the first passivation layer;
forming a contact hole exposing a portion of the first auxiliary electrode and the first concave-convex pattern through the planarization layer;
forming a first electrode and a second auxiliary electrode on the planarization layer;
forming a bank on the first electrode;
forming an organic light emitting layer on the first electrode and the bank;
forming a second electrode on the organic light emitting layer;
forming a second passivation layer on the second electrode;
forming an encapsulation layer on the second passivation layer;
forming a color filter on the encapsulation layer; and
and electrically connecting the first auxiliary electrode, the second auxiliary electrode, and the second electrode to each other.
18. The method of claim 17,
The step of electrically connecting the first auxiliary electrode, the second auxiliary electrode, and the second electrode to each other includes irradiating a laser to the first auxiliary electrode and the second auxiliary electrode under the substrate. A method of manufacturing the device.
delete delete delete

Images