JP2008257710A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
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- JP2008257710A JP2008257710A JP2008062128A JP2008062128A JP2008257710A JP 2008257710 A JP2008257710 A JP 2008257710A JP 2008062128 A JP2008062128 A JP 2008062128A JP 2008062128 A JP2008062128 A JP 2008062128A JP 2008257710 A JP2008257710 A JP 2008257710A
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Images
Classifications
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
【解決手段】非単結晶半導体層を用いて形成された半導体素子を有する素子層上に、有機化合物または無機化合物の高強度繊維に有機樹脂が含浸された構造体を設け、加熱圧着することにより、有機化合物または無機化合物の高強度繊維に有機樹脂が含浸された構造体及び素子層が固着された半導体装置を作製する。
【選択図】図1
Description
本実施の形態では、局所的押圧(点圧、線圧等)によっても破損しにくく、信頼性の高い半導体装置について、図1、図8及び図9を用いて示す。
本実施の形態では、外部からの局所的圧力がかかっても破損しにくい半導体装置を歩留まり高く作製する方法を、図3を用いて示す。
本実施の形態では、実施の形態2と比較して、さらに破壊されにくい半導体装置の作製方法を図4を用いて説明する。
本実施の形態では、素子層にアンテナが形成されず、別の基板に設けられたアンテナを素子層に接続した半導体装置の作製方法について、図5及び図6を用いて説明する。
本実施の形態では、実施の形態1乃至4で示す非単結晶半導体層を用いて形成される半導体素子を含む素子層がプリント基板に接続された半導体装置について、図10を用いて説明する。
本実施の形態では、局所的荷重(点圧、線圧等)による破壊を低減することが可能な導電層を有する基板を作製する例を示す。
本実施の形態では、本発明の半導体装置の構成及び応用例を示す。ここでは、半導体装置の代表例として、RFID及び記憶装置について説明する。
本実施の形態では、本発明の半導体装置を用いた電子機器について以下に示す。
Claims (18)
- 非単結晶半導体層を含み、該非単結晶半導体層で能動素子が形成され、該能動素子が絶縁層で覆われた厚さ1μm以上10μm以下の素子層と、
局所的な押圧を緩和させる厚さ10μm以上100μm以下の封止層と、
を有し、
前記素子層の一方の面または向かい合う一対の面に前記封止層が固着されていることを特徴とする半導体装置。 - 非単結晶半導体層を含み、該非単結晶半導体層で能動素子が形成され、該能動素子が絶縁層で覆われた厚さ1μm以上10μm以下の素子層と、
有機化合物材料又は無機化合物材料の繊維体に有機樹脂が含浸された厚さ10μm以上100μm以下の封止層と、
を有し、
前記素子層の一方の面または向かい合う一対の面に前記封止層が固着されていることを特徴とする半導体装置。 - 非単結晶半導体層を含み、該非単結晶半導体層で能動素子が形成され、該能動素子が絶縁層で覆われた厚さ1μm以上10μm以下の素子層と、
有機化合物材料又は無機化合物材料の単糸を複数本束ねた経糸及び緯糸が密に織り込まれた繊維体に有機樹脂が含浸された厚さ10μm以上100μm以下の封止層と、
を有し、
前記素子層の一方の面または向かい合う一対の面に前記封止層が固着されていることを特徴とする半導体装置。 - 非単結晶半導体層を含み、該非単結晶半導体層で能動素子が形成され、該能動素子が絶縁層で覆われた厚さ1μm以上10μm以下の厚さの素子層と、
有機化合物材料又は無機化合物材料の単糸を複数本束ねた経糸及び緯糸が密に織り込まれた繊維体に有機樹脂が含浸された厚さ10μm以上100μm以下の封止層と、
を有し、
前記素子層の一方の面または向かい合う一対の面は、前記封止層の前記繊維体で全面が覆われ、且つ前記有機樹脂が固着されていることを特徴とする半導体装置。 - 請求項2乃至4のいずれか一項において、前記繊維体は織布または不織布であることを特徴とする半導体装置。
- 請求項2乃至5のいずれか一項において、繊維体は、ポリビニルアルコール系繊維、ポリエステル系繊維、ポリアミド系繊維、ポリエチレン系繊維、アラミド系繊維、ポリパラフェニレンベンゾビスオキサゾール繊維、ガラス繊維、または炭素繊維で形成されることを特徴とする半導体装置。
- 請求項1乃至6のいずれか一項において、前記有機樹脂は、熱硬化性樹脂または熱可塑性樹脂を含むことを特徴とする半導体装置。
- 請求項7において、前記熱硬化性樹脂は、エポキシ樹脂、不飽和ポリエステル樹脂、ポリイミド樹脂、ビスマレイミドトリアジン樹脂、またはシアネート樹脂であることを特徴とする半導体装置。
- 請求項7において、前記熱可塑性樹脂は、ポリフェニレンオキシド樹脂、ポリエーテルイミド樹脂、またはフッ素樹脂であることを特徴とする半導体装置。
- 請求項1乃至9のいずれか一項において、前記能動素子は、薄膜トランジスタ、不揮発性記憶素子、またはダイオードの一つ以上であることを特徴とする半導体装置。
- 請求項1乃至10のいずれか一項において、前記素子層及び前記封止層の間に前記素子層の前記能動素子に電気的に接続するアンテナが形成されることを特徴とする半導体装置。
- 絶縁表面を有する基板上に剥離層を形成し、前記剥離層上に非単結晶半導体層を用いて能動素子及び前記能動素子を覆う絶縁層を有する素子層を形成し、
繊維体に有機樹脂が含浸された構造体を前記素子層上に設けた後加熱し圧着して、前記素子層上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む封止層を形成し、
前記剥離層から前記素子層を剥離することを特徴とする半導体装置の作製方法。 - 絶縁表面を有する基板上に剥離層を形成し、前記剥離層上に非単結晶半導体層を用いて能動素子及び前記能動素子を覆う絶縁層を有する素子層を形成し、
繊維体に有機樹脂が含浸された第1の構造体を前記素子層の一方の面に設けた後加熱し圧着して、前記素子層上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む第1の封止層を形成し、
前記剥離層から前記素子層を剥離し、
繊維体に有機樹脂が含浸された第2の構造体を前記素子層の他方の面に設けた後加熱し圧着して、前記素子層上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む第2の封止層を形成することを特徴とする半導体装置の作製方法。 - 請求項12または13において、前記素子層にアンテナが含まれることを特徴とする半導体装置の作製方法。
- 絶縁表面を有する基板上に剥離層を形成し、前記剥離層上に非単結晶半導体層を用いて能動素子、前記能動素子を覆う絶縁層、及び配線を有する素子層を形成し、
繊維体に有機樹脂が含浸された構造体を前記素子層上に設けた後加熱し圧着して、前記素子層上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む封止層を形成し、前記封止層の一部を除去して前記配線に接続する接続端子を形成し、
前記剥離層から前記素子層を剥離し、
前記封止層にアンテナを有する基板を貼り付けると共に、前記接続端子及び前記アンテナを電気的に接続することを特徴とする半導体装置の作製方法。 - 絶縁表面を有する基板上に剥離層を形成し、前記剥離層上に非単結晶半導体層を用いて能動素子、前記能動素子を覆う絶縁層、及び配線を有する素子層を形成し、
繊維体に有機樹脂が含浸された第1の構造体を前記素子層の一方の面に設けた後加熱し圧着して、前記素子層上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む第1の封止層を形成し、前記第1の封止層の一部を除去して前記配線に接続する接続端子を形成し、
前記剥離層から前記素子層を剥離し、
前記第1の封止層にアンテナを有する基板を貼り付けると共に、前記接続端子及び前記アンテナを電気的に接続し、
繊維体に有機樹脂が含浸された第2の構造体を前記素子層の他方の面に設けた後、加熱し圧着して、前記素子層上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む第2の封止層を形成することを特徴とする半導体装置の作製方法。 - 絶縁表面を有する基板上に剥離層を形成し、前記剥離層上に非単結晶半導体層を用いて能動素子、前記能動素子を覆う絶縁層、第1の配線、及び第2の配線を有する素子層を形成し、
繊維体に有機樹脂が含浸された第1の構造体を前記素子層の一方の面に設けた後加熱し圧
着して、前記素子層上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む第1の封止層を形成し、前記第1の封止層の一部を除去して前記第1の配線に接続する第1の接続端子を形成し、
前記剥離層から前記素子層を剥離し、
前記第1の封止層に第1のアンテナを有する基板を貼り付けると共に、前記第1の接続端子及び前記第1のアンテナを電気的に接続し、
繊維体に有機樹脂が含浸された第2の構造体を前記素子層の他方の面に設けた後、加熱し圧着して、前記素子層上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む第2の封止層を形成し、前記第2の封止層の一部を除去して前記第2の配線に接続する第2の接続端子を形成し、
前記第2の封止層に第2のアンテナを有する基板を貼り付けると共に、前記第2の接続端子及び前記第2のアンテナを電気的に接続することを特徴とする半導体装置の作製方法。 - 請求項12乃至17のいずれか一項において、前記非単結晶半導体層を用いて形成された前記能動素子は、薄膜トランジスタ、不揮発性記憶素子、またはダイオードの一つ以上であることを特徴とする半導体装置の作製方法。
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JP2019153795A (ja) * | 2013-11-06 | 2019-09-12 | 株式会社半導体エネルギー研究所 | 剥離方法 |
Also Published As
Publication number | Publication date |
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US8552418B2 (en) | 2013-10-08 |
CN103258800A (zh) | 2013-08-21 |
JP2010226127A (ja) | 2010-10-07 |
CN103258800B (zh) | 2017-04-26 |
CN101266953B (zh) | 2013-05-29 |
EP1970951A2 (en) | 2008-09-17 |
JP2015128186A (ja) | 2015-07-09 |
EP1970951A3 (en) | 2009-05-06 |
JP2013179358A (ja) | 2013-09-09 |
JP2020150277A (ja) | 2020-09-17 |
JP5721777B2 (ja) | 2015-05-20 |
TWI431730B (zh) | 2014-03-21 |
US20080224941A1 (en) | 2008-09-18 |
JP2019091900A (ja) | 2019-06-13 |
JP4519924B2 (ja) | 2010-08-04 |
KR101448485B1 (ko) | 2014-10-08 |
JP6461227B2 (ja) | 2019-01-30 |
US7968427B2 (en) | 2011-06-28 |
CN101266953A (zh) | 2008-09-17 |
JP5291666B2 (ja) | 2013-09-18 |
JP2017157850A (ja) | 2017-09-07 |
TW200845325A (en) | 2008-11-16 |
JP2022069697A (ja) | 2022-05-11 |
US20110233556A1 (en) | 2011-09-29 |
JP6138185B2 (ja) | 2017-05-31 |
KR20080084668A (ko) | 2008-09-19 |
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