JP2008109136A - 熱プロセスによってエッチングされた基板からハロゲン残渣を除去するための統合された方法 - Google Patents

熱プロセスによってエッチングされた基板からハロゲン残渣を除去するための統合された方法 Download PDF

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Publication number
JP2008109136A
JP2008109136A JP2007272802A JP2007272802A JP2008109136A JP 2008109136 A JP2008109136 A JP 2008109136A JP 2007272802 A JP2007272802 A JP 2007272802A JP 2007272802 A JP2007272802 A JP 2007272802A JP 2008109136 A JP2008109136 A JP 2008109136A
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Prior art keywords
substrate
processing
chamber
heating
etched
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Pending
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JP2007272802A
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Japanese (ja)
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JP2008109136A5 (enExample
Inventor
Mark Naoshi Kawaguchi
ナオシ カワグチ マーク
Kin Pong Lo
ポン ロ キン
Brett Christian Hoogensen
クリスティアン フーゲンセン ブレット
Sandy M Wen
エム． ウェン サンディー
Steven H Kim
エイチ． キム スティーヴン
Kenneth J Bahng
ジェイ． バーング ケニス，
Matthew Fenton Davis
フェントン デイヴィス マシュー
Thorsten Lill
リル ソーステン
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US11/553,132 external-priority patent/US7655571B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2008109136A publication Critical patent/JP2008109136A/ja
Publication of JP2008109136A5 publication Critical patent/JP2008109136A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2007272802A 2006-10-26 2007-10-19 熱プロセスによってエッチングされた基板からハロゲン残渣を除去するための統合された方法 Pending JP2008109136A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/553,132 US7655571B2 (en) 2006-10-26 2006-10-26 Integrated method and apparatus for efficient removal of halogen residues from etched substrates
US11/676,161 US7846845B2 (en) 2006-10-26 2007-02-16 Integrated method for removal of halogen residues from etched substrates in a processing system

Publications (2)

Publication Number Publication Date
JP2008109136A true JP2008109136A (ja) 2008-05-08
JP2008109136A5 JP2008109136A5 (enExample) 2010-12-02

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Family Applications (1)

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JP2007272802A Pending JP2008109136A (ja) 2006-10-26 2007-10-19 熱プロセスによってエッチングされた基板からハロゲン残渣を除去するための統合された方法

Country Status (7)

Country Link
US (1) US7846845B2 (enExample)
EP (1) EP1916703A3 (enExample)
JP (1) JP2008109136A (enExample)
KR (1) KR101010419B1 (enExample)
CN (1) CN102243989B (enExample)
SG (2) SG142270A1 (enExample)
TW (1) TWI348735B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294168A (ja) * 2007-05-23 2008-12-04 Meidensha Corp レジスト除去方法及びその装置
JP2013509003A (ja) * 2009-10-27 2013-03-07 ラム リサーチ コーポレーション ハロゲン除去のための方法及び装置
JP2016225625A (ja) * 2015-05-29 2016-12-28 ピーエスケー インコーポレイテッド 基板処理装置及び方法
KR20180124726A (ko) * 2017-05-12 2018-11-21 램 리써치 코포레이션 할로겐 제거 모듈 및 연관된 시스템들 및 방법들
US10179150B2 (en) 2005-09-26 2019-01-15 Lifecell Corporation Dry platelet composition
KR20210050614A (ko) * 2019-10-28 2021-05-10 세메스 주식회사 기판처리장치
CN114695190A (zh) * 2020-12-28 2022-07-01 细美事有限公司 用于处理基板的设备和方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7946759B2 (en) * 2007-02-16 2011-05-24 Applied Materials, Inc. Substrate temperature measurement by infrared transmission
KR101214643B1 (ko) * 2007-12-04 2012-12-21 메이덴샤 코포레이션 레지스트 제거방법 및 그를 위한 장치
KR100912965B1 (ko) * 2007-12-24 2009-08-20 주식회사 하이닉스반도체 수직 채널 트랜지스터를 구비한 반도체 소자의 제조 방법
US8616224B2 (en) 2010-04-30 2013-12-31 Applied Materials, Inc. Methods and apparatus for providing a gas mixture to a pair of process chambers
KR101132568B1 (ko) * 2010-05-06 2012-04-05 주식회사 테스 흄 발생없이 패턴을 형성하는 방법
US20110304078A1 (en) * 2010-06-14 2011-12-15 Applied Materials, Inc. Methods for removing byproducts from load lock chambers
US8845816B2 (en) 2011-03-01 2014-09-30 Applied Materials, Inc. Method extending the service interval of a gas distribution plate
US8992689B2 (en) 2011-03-01 2015-03-31 Applied Materials, Inc. Method for removing halogen-containing residues from substrate
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
CN203205393U (zh) 2011-03-01 2013-09-18 应用材料公司 用于转移基板及限制自由基的箍组件
JP6114698B2 (ja) 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
CN106847737B (zh) * 2012-02-29 2020-11-13 应用材料公司 配置中的除污及剥除处理腔室
CN103572253B (zh) * 2012-07-30 2016-02-10 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室和具有它的半导体设备
US20150211114A1 (en) * 2014-01-30 2015-07-30 Applied Materials, Inc. Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects
CN106298581B (zh) * 2015-05-13 2020-10-13 盛美半导体设备(上海)股份有限公司 光辐射加热刻蚀装置及方法
CN107919298B (zh) 2016-10-08 2021-01-29 北京北方华创微电子装备有限公司 气相刻蚀装置及设备
US10867843B2 (en) * 2016-12-05 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for fabrication semiconductor device
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
KR102790075B1 (ko) * 2017-02-24 2025-04-04 삼성전자주식회사 잔류 가스 제거 장치 및 이를 포함하는 기판 처리 설비
US20190051540A1 (en) * 2017-08-08 2019-02-14 Lam Research Corporation Systems and methods for plasma-less de-halogenation
KR102003361B1 (ko) * 2017-09-19 2019-07-24 무진전자 주식회사 인시튜 건식 세정 방법 및 장치
KR101981738B1 (ko) * 2017-09-19 2019-05-27 무진전자 주식회사 기판 처리 방법 및 장치
KR102869765B1 (ko) * 2019-05-17 2025-10-13 삼성전자주식회사 소스 용기용 잔류물 제거 장치, 소스 용기 및 극자외선 노광장치
JP7422531B2 (ja) * 2019-12-17 2024-01-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2023509134A (ja) * 2020-01-07 2023-03-07 ラム リサーチ コーポレーション 基板処理システムのロボットアームの自動洗浄
US11921422B2 (en) * 2021-04-09 2024-03-05 Applied Materials, Inc. Single-volume baking chamber for mask clean
US12384045B2 (en) * 2022-06-06 2025-08-12 GM Global Technology Operations LLC Supplemental and targeted heating of vehicle body-in-white interior components/areas for paint ovens

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04268728A (ja) * 1991-02-25 1992-09-24 Hitachi Ltd エッチング方法および装置
JPH0629264A (ja) * 1992-07-09 1994-02-04 Toshiba Corp 表面処理方法
JPH06252143A (ja) * 1993-02-25 1994-09-09 Sumitomo Metal Ind Ltd Ａｌ合金膜の処理方法及びその装置
JPH08274072A (ja) * 1995-03-31 1996-10-18 Toshiba Corp 表面処理装置および表面処理方法
JPH0969525A (ja) * 1995-08-31 1997-03-11 Mitsubishi Electric Corp 金属配線の処理方法
JP2000012526A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
JP2003519380A (ja) * 2000-01-05 2003-06-17 東京エレクトロン株式会社 透過分光を用いるウェハ帯域エッジの測定方法、及びウェハの温度均一性を制御するためのプロセス
JP2005109030A (ja) * 2003-09-29 2005-04-21 Toshiba Corp 電子デバイス製造方法
JP2006261157A (ja) * 2005-03-15 2006-09-28 Ricoh Co Ltd 半導体装置の製造方法及び半導体装置

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5071714A (en) 1989-04-17 1991-12-10 International Business Machines Corporation Multilayered intermetallic connection for semiconductor devices
KR0155158B1 (ko) * 1989-07-25 1998-12-01 카자마 젠쥬 종형 처리 장치 및 처리방법
EP0809283A3 (en) * 1989-08-28 1998-02-25 Hitachi, Ltd. Method of treating wafers
GB2238868A (en) * 1989-11-22 1991-06-12 Res Corp Technologies Inc Silicon wafer temperature measurement by optical transmission monitoring.
US5188979A (en) 1991-08-26 1993-02-23 Motorola Inc. Method for forming a nitride layer using preheated ammonia
JPH05326477A (ja) * 1992-05-26 1993-12-10 Ulvac Japan Ltd 半導体基板表面のハロゲン除去方法
JPH0685173A (ja) 1992-07-17 1994-03-25 Toshiba Corp 半導体集積回路用キャパシタ
US5337207A (en) 1992-12-21 1994-08-09 Motorola High-permittivity dielectric capacitor for use in a semiconductor device and process for making the same
US5356833A (en) 1993-04-05 1994-10-18 Motorola, Inc. Process for forming an intermetallic member on a semiconductor substrate
JP3080834B2 (ja) * 1994-03-30 2000-08-28 株式会社東芝 半導体基板洗浄処理装置
US6933182B1 (en) * 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
KR100413649B1 (ko) 1996-01-26 2004-04-28 마츠시타 덴끼 산교 가부시키가이샤 반도체장치의제조방법
US6148072A (en) * 1997-01-03 2000-11-14 Advis, Inc Methods and systems for initiating video communication
JPH1154721A (ja) 1997-07-29 1999-02-26 Nec Corp 半導体装置の製造方法および製造装置
US6136211A (en) 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
KR100275754B1 (ko) 1998-05-15 2000-12-15 윤종용 커패시터 하부전극의 반구형 그레인 형성전 전처리방법
US6211035B1 (en) 1998-09-09 2001-04-03 Texas Instruments Incorporated Integrated circuit and method
JP2000286200A (ja) * 1999-03-31 2000-10-13 Kokusai Electric Co Ltd 熱処理方法および熱処理装置
US6379574B1 (en) 1999-05-03 2002-04-30 Applied Materials, Inc. Integrated post-etch treatment for a dielectric etch process
US6270568B1 (en) 1999-07-15 2001-08-07 Motorola, Inc. Method for fabricating a semiconductor structure with reduced leakage current density
US6319730B1 (en) 1999-07-15 2001-11-20 Motorola, Inc. Method of fabricating a semiconductor structure including a metal oxide interface
US6479801B1 (en) * 1999-10-22 2002-11-12 Tokyo Electron Limited Temperature measuring method, temperature control method and processing apparatus
US6485988B2 (en) 1999-12-22 2002-11-26 Texas Instruments Incorporated Hydrogen-free contact etch for ferroelectric capacitor formation
GB0000901D0 (en) 2000-01-14 2000-03-08 Isis Innovation Antiparasitic agent
US6514378B1 (en) * 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
US6184072B1 (en) 2000-05-17 2001-02-06 Motorola, Inc. Process for forming a high-K gate dielectric
US6300202B1 (en) 2000-05-18 2001-10-09 Motorola Inc. Selective removal of a metal oxide dielectric
US6444512B1 (en) 2000-06-12 2002-09-03 Motorola, Inc. Dual metal gate transistors for CMOS process
US6297095B1 (en) 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
KR20020009332A (ko) 2000-07-26 2002-02-01 주승기 강유전체 박막의 결정화 방법
US6204141B1 (en) 2000-09-13 2001-03-20 Taiwan Semiconductor Mfg. Co. Ltd. Method of manufacturing a deep trench capacitor
US6326261B1 (en) 2001-01-05 2001-12-04 United Microelectronics Corp. Method of fabricating a deep trench capacitor
US6348386B1 (en) 2001-04-16 2002-02-19 Motorola, Inc. Method for making a hafnium-based insulating film
US6806095B2 (en) 2002-03-06 2004-10-19 Padmapani C. Nallan Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers
US6902681B2 (en) 2002-06-26 2005-06-07 Applied Materials Inc Method for plasma etching of high-K dielectric materials
US20040007561A1 (en) 2002-07-12 2004-01-15 Applied Materials, Inc. Method for plasma etching of high-K dielectric materials
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04268728A (ja) * 1991-02-25 1992-09-24 Hitachi Ltd エッチング方法および装置
JPH0629264A (ja) * 1992-07-09 1994-02-04 Toshiba Corp 表面処理方法
JPH06252143A (ja) * 1993-02-25 1994-09-09 Sumitomo Metal Ind Ltd Ａｌ合金膜の処理方法及びその装置
JPH08274072A (ja) * 1995-03-31 1996-10-18 Toshiba Corp 表面処理装置および表面処理方法
JPH0969525A (ja) * 1995-08-31 1997-03-11 Mitsubishi Electric Corp 金属配線の処理方法
JP2000012526A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
JP2003519380A (ja) * 2000-01-05 2003-06-17 東京エレクトロン株式会社 透過分光を用いるウェハ帯域エッジの測定方法、及びウェハの温度均一性を制御するためのプロセス
JP2005109030A (ja) * 2003-09-29 2005-04-21 Toshiba Corp 電子デバイス製造方法
JP2006261157A (ja) * 2005-03-15 2006-09-28 Ricoh Co Ltd 半導体装置の製造方法及び半導体装置

Cited By (15)

* Cited by examiner, † Cited by third party
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US10179150B2 (en) 2005-09-26 2019-01-15 Lifecell Corporation Dry platelet composition
JP2008294168A (ja) * 2007-05-23 2008-12-04 Meidensha Corp レジスト除去方法及びその装置
KR101854923B1 (ko) * 2009-10-27 2018-05-04 램 리써치 코포레이션 할로겐 제거 방법 및 장치
JP2013509003A (ja) * 2009-10-27 2013-03-07 ラム リサーチ コーポレーション ハロゲン除去のための方法及び装置
JP2016225625A (ja) * 2015-05-29 2016-12-28 ピーエスケー インコーポレイテッド 基板処理装置及び方法
KR20180124726A (ko) * 2017-05-12 2018-11-21 램 리써치 코포레이션 할로겐 제거 모듈 및 연관된 시스템들 및 방법들
JP2018195810A (ja) * 2017-05-12 2018-12-06 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ハロゲン除去モジュールならびに関連のシステムおよび方法
JP7211716B2 (ja) 2017-05-12 2023-01-24 ラム リサーチ コーポレーション ハロゲン除去モジュールならびに関連のシステムおよび方法
KR102521160B1 (ko) * 2017-05-12 2023-04-12 램 리써치 코포레이션 할로겐 제거 모듈 및 연관된 시스템들 및 방법들
KR20210050614A (ko) * 2019-10-28 2021-05-10 세메스 주식회사 기판처리장치
KR102325772B1 (ko) * 2019-10-28 2021-11-12 세메스 주식회사 기판처리장치
US11978654B2 (en) 2019-10-28 2024-05-07 Semes Co., Ltd. Substrate processing apparatus
CN114695190A (zh) * 2020-12-28 2022-07-01 细美事有限公司 用于处理基板的设备和方法
KR20220093568A (ko) * 2020-12-28 2022-07-05 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102603680B1 (ko) * 2020-12-28 2023-11-20 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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US7846845B2 (en) 2010-12-07
KR101010419B1 (ko) 2011-01-21
US20080099040A1 (en) 2008-05-01
CN102243989B (zh) 2015-05-20
SG176425A1 (en) 2011-12-29
TW200837828A (en) 2008-09-16
KR20080037565A (ko) 2008-04-30
CN102243989A (zh) 2011-11-16
SG142270A1 (en) 2008-05-28
EP1916703A3 (en) 2009-05-06
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