JP2007511068A5 - - Google Patents

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Publication number
JP2007511068A5
JP2007511068A5 JP2006537304A JP2006537304A JP2007511068A5 JP 2007511068 A5 JP2007511068 A5 JP 2007511068A5 JP 2006537304 A JP2006537304 A JP 2006537304A JP 2006537304 A JP2006537304 A JP 2006537304A JP 2007511068 A5 JP2007511068 A5 JP 2007511068A5
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JP
Japan
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layer
semiconductor wafer
substrate
semiconductor
buried insulator
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JP2006537304A
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English (en)
Japanese (ja)
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JP4939222B2 (ja
JP2007511068A (ja
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Priority claimed from US10/700,085 external-priority patent/US7084460B2/en
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Publication of JP2007511068A5 publication Critical patent/JP2007511068A5/ja
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Publication of JP4939222B2 publication Critical patent/JP4939222B2/ja
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JP2006537304A 2003-11-03 2004-10-28 半導体ウエハ及びこれを形成する方法 Expired - Fee Related JP4939222B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/700,085 US7084460B2 (en) 2003-11-03 2003-11-03 Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates
US10/700,085 2003-11-03
PCT/EP2004/052704 WO2005043614A2 (en) 2003-11-03 2004-10-28 METHOD FOR FABRICATING SiGe-ON-INSULATOR (SGOI) AND Ge-ON-INSULATOR (GOI) SUBSTRATES

Publications (3)

Publication Number Publication Date
JP2007511068A JP2007511068A (ja) 2007-04-26
JP2007511068A5 true JP2007511068A5 (enExample) 2007-11-29
JP4939222B2 JP4939222B2 (ja) 2012-05-23

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JP2006537304A Expired - Fee Related JP4939222B2 (ja) 2003-11-03 2004-10-28 半導体ウエハ及びこれを形成する方法

Country Status (7)

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US (3) US7084460B2 (enExample)
EP (1) EP1687848A2 (enExample)
JP (1) JP4939222B2 (enExample)
KR (2) KR100985932B1 (enExample)
CN (1) CN100399537C (enExample)
TW (1) TWI331777B (enExample)
WO (1) WO2005043614A2 (enExample)

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CN113270505B (zh) * 2021-04-13 2024-05-17 广东省大湾区集成电路与系统应用研究院 一种光电探测器结构及其制备方法
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