KR100985932B1 - 실리콘게르마늄-온-절연체 기판 및 게르마늄-온-절연체 기판을 제조하기 위한 방법 - Google Patents

실리콘게르마늄-온-절연체 기판 및 게르마늄-온-절연체 기판을 제조하기 위한 방법 Download PDF

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KR100985932B1
KR100985932B1 KR1020097027346A KR20097027346A KR100985932B1 KR 100985932 B1 KR100985932 B1 KR 100985932B1 KR 1020097027346 A KR1020097027346 A KR 1020097027346A KR 20097027346 A KR20097027346 A KR 20097027346A KR 100985932 B1 KR100985932 B1 KR 100985932B1
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germanium
layer
goi
insulating layer
buried
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KR20100011995A (ko
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티제치앙 첸
구이 코헨
알렉산더 레즈닉크
데벤드라 사다나
가밤 사히디
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인터내셔널 비지네스 머신즈 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020097027346A 2003-11-03 2004-10-28 실리콘게르마늄-온-절연체 기판 및 게르마늄-온-절연체 기판을 제조하기 위한 방법 Expired - Fee Related KR100985932B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/700,085 US7084460B2 (en) 2003-11-03 2003-11-03 Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates
US10/700,085 2003-11-03

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KR1020067008529A Division KR100992232B1 (ko) 2003-11-03 2004-10-28 실리콘게르마늄-온-절연체 기판 및 게르마늄-온-절연체기판을 제조하기 위한 방법

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KR20100011995A KR20100011995A (ko) 2010-02-03
KR100985932B1 true KR100985932B1 (ko) 2010-10-06

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KR1020067008529A Expired - Fee Related KR100992232B1 (ko) 2003-11-03 2004-10-28 실리콘게르마늄-온-절연체 기판 및 게르마늄-온-절연체기판을 제조하기 위한 방법

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US (3) US7084460B2 (enExample)
EP (1) EP1687848A2 (enExample)
JP (1) JP4939222B2 (enExample)
KR (2) KR100985932B1 (enExample)
CN (1) CN100399537C (enExample)
TW (1) TWI331777B (enExample)
WO (1) WO2005043614A2 (enExample)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
JP4413580B2 (ja) * 2003-11-04 2010-02-10 株式会社東芝 素子形成用基板の製造方法
US20050274988A1 (en) * 2004-06-01 2005-12-15 Hong Sungkwon C Imager with reflector mirrors
US7157300B2 (en) * 2004-11-19 2007-01-02 Sharp Laboratories Of America, Inc. Fabrication of thin film germanium infrared sensor by bonding to silicon wafer
JP4427489B2 (ja) * 2005-06-13 2010-03-10 株式会社東芝 半導体装置の製造方法
US7656049B2 (en) 2005-12-22 2010-02-02 Micron Technology, Inc. CMOS device with asymmetric gate strain
US7456057B2 (en) * 2005-12-31 2008-11-25 Corning Incorporated Germanium on glass and glass-ceramic structures
GB0612093D0 (en) * 2006-06-19 2006-07-26 Univ Belfast IC Substrate and Method of Manufacture of IC Substrate
FR2911431B1 (fr) * 2007-01-16 2009-05-15 Soitec Silicon On Insulator Procede de fabrication de structures soi a couche isolante d'epaisseur controlee
EP1993143A1 (de) * 2007-05-14 2008-11-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement, Verfahren zu dessen Herstellung und dessen Verwendung
TWI352849B (en) * 2007-07-17 2011-11-21 Chunghwa Picture Tubes Ltd Active matrix substrate
US8927392B2 (en) * 2007-11-02 2015-01-06 Siva Power, Inc. Methods for forming crystalline thin-film photovoltaic structures
US8178419B2 (en) 2008-02-05 2012-05-15 Twin Creeks Technologies, Inc. Method to texture a lamina surface within a photovoltaic cell
FR2933534B1 (fr) * 2008-07-03 2011-04-01 Soitec Silicon On Insulator Procede de fabrication d'une structure comprenant une couche de germanium sur un substrat
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
FR2938119B1 (fr) * 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de detachement de couches semi-conductrices a basse temperature
WO2010088366A1 (en) * 2009-01-28 2010-08-05 Wakonda Technologies, Inc. Large-grain crystalline thin-film structures and devices and methods for forming the same
KR101096980B1 (ko) * 2009-02-04 2011-12-20 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US7927909B2 (en) * 2009-05-01 2011-04-19 Sharp Laboratories Of America, Inc. Germanium film optical device fabricated on a glass substrate
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
FR2953640B1 (fr) * 2009-12-04 2012-02-10 S O I Tec Silicon On Insulator Tech Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante
PL2539301T3 (pl) 2010-02-25 2018-07-31 Corning Incorporated Kompozycje i sposoby wytwarzania korpusów ceramicznych o niskiej rozszerzalności cieplnej
CN102947953A (zh) * 2010-03-24 2013-02-27 西奥尼克斯公司 具有增强的电磁辐射探测的器件和相关方法
WO2011132654A1 (ja) * 2010-04-20 2011-10-27 住友電気工業株式会社 複合基板の製造方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
CN101882624B (zh) * 2010-06-29 2011-09-14 清华大学 在绝缘衬底上形成有高Ge应变层的结构及形成方法
US8652925B2 (en) 2010-07-19 2014-02-18 International Business Machines Corporation Method of fabricating isolated capacitors and structure thereof
US9231061B2 (en) * 2010-10-25 2016-01-05 The Research Foundation Of State University Of New York Fabrication of surface textures by ion implantation for antireflection of silicon crystals
US8298923B2 (en) * 2010-10-27 2012-10-30 International Business Machinces Corporation Germanium-containing release layer for transfer of a silicon layer to a substrate
CN102201364A (zh) * 2011-05-26 2011-09-28 北京大学 一种绝缘体上锗衬底的制备方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
CN103946867A (zh) 2011-07-13 2014-07-23 西奥尼克斯公司 生物计量成像装置和相关方法
CN102383192B (zh) * 2011-07-29 2014-06-18 上海新傲科技股份有限公司 锗衬底的生长方法以及锗衬底
CN102290369B (zh) * 2011-09-22 2013-12-04 中国科学院上海微系统与信息技术研究所 一种薄goi晶片及其制备方法
US8841161B2 (en) 2012-02-05 2014-09-23 GTAT.Corporation Method for forming flexible solar cells
US8916954B2 (en) 2012-02-05 2014-12-23 Gtat Corporation Multi-layer metal support
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
CN103578934B (zh) * 2012-07-24 2016-12-07 中国科学院微电子研究所 一种硅基绝缘体上锗衬底结构及其制备方法
US8785294B2 (en) 2012-07-26 2014-07-22 Gtat Corporation Silicon carbide lamina
US20140038329A1 (en) * 2012-08-02 2014-02-06 Gtat Corporation Epitaxial growth on thin lamina
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
CN103337279A (zh) * 2013-06-26 2013-10-02 汕头万顺包装材料股份有限公司光电薄膜分公司 透明导电膜及具有该导电膜的触摸面板
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US8980746B2 (en) * 2013-08-13 2015-03-17 Lam Research Corporation Adhesion layer for through silicon via metallization
CN103646909B (zh) * 2013-12-24 2016-01-20 中国科学院上海微系统与信息技术研究所 绝缘体上锗goi结构的制备方法
US9418870B2 (en) * 2014-02-12 2016-08-16 International Business Machines Corporation Silicon germanium-on-insulator formation by thermal mixing
KR102206378B1 (ko) * 2014-06-13 2021-01-22 인텔 코포레이션 웨이퍼 본딩을 위한 표면 캡슐화
US9209301B1 (en) * 2014-09-18 2015-12-08 Soitec Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers
CN104701360B (zh) * 2015-03-17 2017-09-29 福建工程学院 一种绝缘层上高浓度n型掺杂薄锗材料及其制作方法
TWI550112B (zh) * 2015-04-10 2016-09-21 欣欣天然氣股份有限公司 光電轉換元件的基板的製造方法
CN107667416B (zh) * 2015-06-01 2021-08-31 环球晶圆股份有限公司 制造绝缘体上半导体的方法
SG11201802818VA (en) * 2015-10-13 2018-05-30 Univ Nanyang Tech Method of manufacturing a germanium-on-insulator substrate
US9659960B1 (en) 2015-12-09 2017-05-23 International Business Machines Corporation Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation
FR3061803B1 (fr) * 2017-01-11 2019-08-16 Soitec Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat
FR3061802B1 (fr) * 2017-01-11 2019-08-16 Soitec Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat
CN106952861B (zh) * 2017-04-06 2020-04-21 中国科学院微电子研究所 一种绝缘体上锗衬底结构及其制备方法
CN108447819B (zh) * 2018-04-18 2021-06-11 厦门大学 一种无界面气泡绝缘层上锗键合方法
FR3110282B1 (fr) * 2020-05-18 2022-04-15 Soitec Silicon On Insulator Procédé de fabrication d’un substrat semi-conducteur sur isolant pour applications radiofréquences
JP7354943B2 (ja) * 2020-07-03 2023-10-03 信越半導体株式会社 接合型半導体受光素子及び接合型半導体受光素子の製造方法
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US590695A (en) * 1897-09-28 John s
WO2000048278A1 (fr) * 1999-02-10 2000-08-17 Commissariat A L'energie Atomique Procede de formation sur un support d'une couche de silicium a usage optique et mise en oeuvre du procede pour la realisation de composants optiques
US6372593B1 (en) 1999-07-19 2002-04-16 Mitsubishi Denki Kabushika Kaisha Method of manufacturing SOI substrate and semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153928A (ja) * 1993-11-26 1995-06-16 Toshiba Corp 半導体基板およびその製造方法
JP3265493B2 (ja) * 1994-11-24 2002-03-11 ソニー株式会社 Ｓｏｉ基板の製造方法
US5906951A (en) * 1997-04-30 1999-05-25 International Business Machines Corporation Strained Si/SiGe layers on insulator
KR100429869B1 (ko) * 2000-01-07 2004-05-03 삼성전자주식회사 매몰 실리콘 저머늄층을 갖는 ｃｍｏｓ 집적회로 소자 및기판과 그의 제조방법
US6633066B1 (en) * 2000-01-07 2003-10-14 Samsung Electronics Co., Ltd. CMOS integrated circuit devices and substrates having unstrained silicon active layers
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
ATE346410T1 (de) * 2000-08-04 2006-12-15 Amberwave Systems Corp Siliziumwafer mit monolithischen optoelektronischen komponenten
US6524935B1 (en) * 2000-09-29 2003-02-25 International Business Machines Corporation Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique
JP2002305293A (ja) * 2001-04-06 2002-10-18 Canon Inc 半導体部材の製造方法及び半導体装置の製造方法
US6638835B2 (en) * 2001-12-11 2003-10-28 Intel Corporation Method for bonding and debonding films using a high-temperature polymer
US6667528B2 (en) * 2002-01-03 2003-12-23 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
JP3873012B2 (ja) * 2002-07-29 2007-01-24 株式会社東芝 半導体装置の製造方法
WO2004021420A2 (en) * 2002-08-29 2004-03-11 Massachusetts Institute Of Technology Fabrication method for a monocrystalline semiconductor layer on a substrate
US6897498B2 (en) * 2003-03-31 2005-05-24 Sioptical, Inc. Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform
US6989058B2 (en) * 2003-09-03 2006-01-24 International Business Machines Corporation Use of thin SOI to inhibit relaxation of SiGe layers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US590695A (en) * 1897-09-28 John s
WO2000048278A1 (fr) * 1999-02-10 2000-08-17 Commissariat A L'energie Atomique Procede de formation sur un support d'une couche de silicium a usage optique et mise en oeuvre du procede pour la realisation de composants optiques
US6372593B1 (en) 1999-07-19 2002-04-16 Mitsubishi Denki Kabushika Kaisha Method of manufacturing SOI substrate and semiconductor device

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US20080050887A1 (en) 2008-02-28
TWI331777B (en) 2010-10-11
US7315065B2 (en) 2008-01-01
US20050093100A1 (en) 2005-05-05
US20060249790A1 (en) 2006-11-09
CN100399537C (zh) 2008-07-02
CN1875473A (zh) 2006-12-06
JP4939222B2 (ja) 2012-05-23
KR20060107755A (ko) 2006-10-16
KR20100011995A (ko) 2010-02-03
EP1687848A2 (en) 2006-08-09
WO2005043614A2 (en) 2005-05-12
US7084460B2 (en) 2006-08-01
KR100992232B1 (ko) 2010-11-05
US7498235B2 (en) 2009-03-03
JP2007511068A (ja) 2007-04-26
WO2005043614A3 (en) 2005-11-03
TW200516669A (en) 2005-05-16

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