JP2007511068A - 絶縁体上SiGe(SGOI)基板及び絶縁体上Ge(GOI)基板の製造方法、半導体ウェハ、並びに半導体構造 - Google Patents
絶縁体上SiGe(SGOI)基板及び絶縁体上Ge(GOI)基板の製造方法、半導体ウェハ、並びに半導体構造 Download PDFInfo
- Publication number
- JP2007511068A JP2007511068A JP2006537304A JP2006537304A JP2007511068A JP 2007511068 A JP2007511068 A JP 2007511068A JP 2006537304 A JP2006537304 A JP 2006537304A JP 2006537304 A JP2006537304 A JP 2006537304A JP 2007511068 A JP2007511068 A JP 2007511068A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- semiconductor wafer
- buried insulator
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 title claims abstract description 133
- 239000000758 substrate Substances 0.000 title claims abstract description 109
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 53
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 16
- 238000007788 roughening Methods 0.000 claims description 15
- 239000012298 atmosphere Substances 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 229910003811 SiGeC Inorganic materials 0.000 claims description 6
- 229910003465 moissanite Inorganic materials 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000001802 infusion Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 53
- 239000010408 film Substances 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 230000008569 process Effects 0.000 description 12
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 8
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000008240 homogeneous mixture Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】GOI基板材料は、少なくとも1個の基板、基板上に位置する埋め込み絶縁体層、Ge含有層、埋め込み絶縁体層上に位置する、好ましくは純粋Geを含む。本発明のGOI基板材料の場合、Ge含有層は、GOI膜とも呼ばれる。GOI膜は、デバイスが形成される本発明の基板材料の層である。
Description
Claims (41)
- 半導体及び非半導体のいずれか一方の基板と、基板の上面に位置する埋め込み絶縁体層と、埋め込み絶縁体層の上面に位置する中間付着層と、中間付着層の上面に位置するGe含有層とを含む半導体ウェハであって、前記Ge含有層が、中間付着層により埋め込み絶縁体層に取り付けられる半導体ウェハ。
- 中間付着層に接触するGe含有層の表面が粗面化される、請求項1に記載の半導体ウェハ。
- 前記中間付着層がSi材料である、請求項1又は2に記載の半導体ウェハ。
- 前記Si材料が単結晶Si、多結晶Si、非晶質Si、エピタキシャルSi及びこれらの組合せのいずれか1つあるいは組合せからなる、請求項3に記載の半導体ウェハ。
- 半導体及び非半導体のいずれか一方の基板と、基板の上面に位置する埋め込み絶縁体層と、埋め込み絶縁体層の上面に位置するGe含有層とを含む半導体ウェハであって、前記Ge含有層が、粗面化された表面により埋め込み絶縁体層に取り付けられる半導体ウェハ。
- 前記Ge含有層が純Ge層である、請求項1〜5の何れか1項に記載の半導体ウェハ。
- 前記Ge含有層が、1nm〜1000nmの厚さを有する薄い層である、請求項1〜6の何れか1項に記載の半導体ウェハ。
- 前記基板が、Si、SiC、SiGe、SiGeC、Ge、GaAs、InAs、InP及びその他のIII/V又はII/VI化合物半導体から成る群から選択した半導体を含む半導体基板である、請求項1〜7の何れか1項に記載の半導体ウェハ。
- 前記基板が、Si、SiGe、SiC、SiGeC、Si/Si、Si/SiC、Si/SiGeC及び成形絶縁体上シリコンから成る群から選択したSi含有半導体基板である、請求項1〜7の何れか1項に記載の半導体ウェハ。
- 前記基板が濾過層、非濾過層、又はこれらの組合せを含む、請求項1〜9の何れか1項に記載の半導体ウェハ。
- 前記埋め込み絶縁体層が結晶質酸化物もしくは非結晶質酸化物、窒化物、及びこれらの組合せ中の少なくとも1つから成る、請求項1〜10の何れか1項に記載の半導体ウェハ。
- 前記埋め込み絶縁体層がSiO2を含む、請求項1〜11の何れか1項に記載の半導体ウェハ。
- 前記埋め込み絶縁体層が、屈折率が異なる交互の誘電体層を少なくとも1対有するブラッグミラーである、請求項1〜12の何れか1項に記載の半導体ウェハ。
- 埋め込み絶縁体層と別の埋め込み絶縁体との間に位置する埋め込み拡散ミラーをさらに含む、請求項1〜13の何れか1項に記載の半導体ウェハ。
- 埋め込み拡散ミラーが波形をなす、請求項14に記載の半導体ウェハ。
- 埋め込み拡散ミラーが金属を含む、請求項15に記載の半導体ウェハ。
- 基板と、前記基板上に位置するブラッグミラーと、前記ブラッグミラー上に位置する絶縁体上Geとを含む半導体ウェハであって、前記ブラッグミラーが、2個の交互の誘電体膜を複数含む半導体ウェハ。
- 前記ブラッグミラーが、SiO2とSi3N4との交互の層を複数含む請求項17に記載の半導体ウェハ。
- 少なくとも、請求項1〜18の何れか1項に記載の半導体ウェハと、該半導体ウェハ上に位置する少なくとも1個のデバイス又は回路とを含む半導体構造。
- デバイスがGe光検知器である、請求項19に記載の半導体構造。
- 回路がSi含有回路である、請求項19又は20に記載の半導体構造。
- 前記デバイス又は前記回路がモノリシックに集積される、請求項19、20又は21に記載の半導体構造。
- 絶縁体上ゲルマニウムを形成するための方法であって、中間付着層をGe含有ドナー基板上に形成するステップと、埋め込み絶縁体層を前記中間付着層上に形成するステップと、水素を前記Ge含有ドナー基板中に注入するステップと、埋め込み絶縁体層の露出表面を半導体及び非半導体のいずれか一方の基板に結合するステップとを含み、前記結合時に、Ge含有ドナー基板の一部分が前記基板に移動される方法。
- Ge含有ドナー基板の表面が、前記中間付着層を形成する前に粗面化される、請求項23に記載の方法。
- 絶縁体上ゲルマニウムを形成するための方法であって、Ge含有ドナー基板の表面を粗面化するステップと、埋め込み絶縁体層を前記粗面化された表面上に形成するステップと、水素を前記Ge含有ドナー基板中に注入するステップと、埋め込み絶縁体層の露出表面を半導体及び非半導体のいずれか一方の基板に結合するステップとを含み、前記結合時に、Ge含有ドナー基板の一部分が前記基板に移動される方法。
- 中間付着層が粗面化された表面上に形成され、前記埋め込み絶縁体が前記中間付着層上に形成される、請求項25に記載の方法。
- 前記粗面化された表面が、不活性気体中におけるスパッタリングにより達成される、請求項24、25又は26に記載の方法。
- Ge含有ドナー基板が純粋Geウェハである、請求項23〜27の何れか1項に記載の方法。
- 注入が1E15cm−2〜1E17cm−2の水素投与量を使用して行われる、請求項23〜28の何れかに記載の方法。
- 注入が、3E16〜4E16cm−2の水素投与量を使用して行われる、請求項29に記載の方法。
- 注入が、20℃〜40℃の注入温度で行われる、請求項23〜30の何れか1項に記載の方法。
- 埋め込み絶縁層及び基板の露出表面が、結合前に清掃及び表面処理される、請求項23〜31の何れか1項に記載の方法。
- 前記結合が、ウェハをフリップし、接触結合及びアニールすることを含む、請求項23〜32の何れか1項に記載の方法。
- 前記アニールが、基板と埋め込み絶縁体層との間の結合を強化することが可能な第1温度における第1アニールと、Ge含有ドナー層の一部分を除去することが可能な第2温度における第2アニールと、結合をさらに強化することが可能な第3温度における第3アニールとを含む、請求項33に記載の方法。
- 第1温度での第1アニールが、1時間〜48時間にわたって100℃〜300℃でおこなわれる、請求項34に記載の方法。
- 第2温度での第2アニールが、1時間〜24時間にわたって250℃〜400℃でおこなわれる、請求項34又は35に記載の方法。
- 第3温度での第3アニールが、1時間〜48時間にわたって500℃〜900℃でおこなわれる、請求項34、35又は36に記載の方法。
- 第1、第2及び第3アニールが、酸素含有気体で任意に希薄化される同じか又は異なる不活性気体雰囲気中で行われる、請求項34、35、36又は37に記載の方法。
- 前記第1、第2及び第3アニールが、単一上昇率を使用して行われるか、又は様々な上昇及びソークサイクルを使用して行われる、請求項34〜38の何れか1項に記載の方法。
- 前記埋め込み絶縁体層の形成と前記水素注入との間に、化学機械的研磨ステップを行うことをさらに含む、請求項23〜39の何れか1項に記載の方法。
- 半導体ウェハを形成する方法であって、埋め込み絶縁体と、埋め込み絶縁体上に位置するSi付着層と、Si付着層上のGe含有層とを含む基板を提供するステップと、Ge含有層及びSi付着層を熱混合して、絶縁体上SiGe又は絶縁体上Geを形成するステップとを含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/700,085 US7084460B2 (en) | 2003-11-03 | 2003-11-03 | Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates |
US10/700,085 | 2003-11-03 | ||
PCT/EP2004/052704 WO2005043614A2 (en) | 2003-11-03 | 2004-10-28 | METHOD FOR FABRICATING SiGe-ON-INSULATOR (SGOI) AND Ge-ON-INSULATOR (GOI) SUBSTRATES |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007511068A true JP2007511068A (ja) | 2007-04-26 |
JP2007511068A5 JP2007511068A5 (ja) | 2007-11-29 |
JP4939222B2 JP4939222B2 (ja) | 2012-05-23 |
Family
ID=34551114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006537304A Expired - Fee Related JP4939222B2 (ja) | 2003-11-03 | 2004-10-28 | 半導体ウエハ及びこれを形成する方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7084460B2 (ja) |
EP (1) | EP1687848A2 (ja) |
JP (1) | JP4939222B2 (ja) |
KR (2) | KR100992232B1 (ja) |
CN (1) | CN100399537C (ja) |
TW (1) | TWI331777B (ja) |
WO (1) | WO2005043614A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102201364A (zh) * | 2011-05-26 | 2011-09-28 | 北京大学 | 一种绝缘体上锗衬底的制备方法 |
KR20170017880A (ko) * | 2014-06-13 | 2017-02-15 | 인텔 코포레이션 | 웨이퍼 본딩을 위한 표면 캡슐화 |
JP2020504462A (ja) * | 2017-01-11 | 2020-02-06 | ソワテク | 前面型撮像素子用基板および前記基板の製造方法 |
JP2022013244A (ja) * | 2020-07-03 | 2022-01-18 | 信越半導体株式会社 | 接合型半導体受光素子及び接合型半導体受光素子の製造方法 |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
JP4413580B2 (ja) * | 2003-11-04 | 2010-02-10 | 株式会社東芝 | 素子形成用基板の製造方法 |
US20050274988A1 (en) * | 2004-06-01 | 2005-12-15 | Hong Sungkwon C | Imager with reflector mirrors |
US7157300B2 (en) * | 2004-11-19 | 2007-01-02 | Sharp Laboratories Of America, Inc. | Fabrication of thin film germanium infrared sensor by bonding to silicon wafer |
JP4427489B2 (ja) * | 2005-06-13 | 2010-03-10 | 株式会社東芝 | 半導体装置の製造方法 |
US7656049B2 (en) * | 2005-12-22 | 2010-02-02 | Micron Technology, Inc. | CMOS device with asymmetric gate strain |
US7456057B2 (en) * | 2005-12-31 | 2008-11-25 | Corning Incorporated | Germanium on glass and glass-ceramic structures |
GB0612093D0 (en) * | 2006-06-19 | 2006-07-26 | Univ Belfast | IC Substrate and Method of Manufacture of IC Substrate |
FR2911431B1 (fr) * | 2007-01-16 | 2009-05-15 | Soitec Silicon On Insulator | Procede de fabrication de structures soi a couche isolante d'epaisseur controlee |
EP1993143A1 (de) * | 2007-05-14 | 2008-11-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement, Verfahren zu dessen Herstellung und dessen Verwendung |
TWI352849B (en) * | 2007-07-17 | 2011-11-21 | Chunghwa Picture Tubes Ltd | Active matrix substrate |
US20090114274A1 (en) * | 2007-11-02 | 2009-05-07 | Fritzemeier Leslie G | Crystalline thin-film photovoltaic structures |
US8178419B2 (en) | 2008-02-05 | 2012-05-15 | Twin Creeks Technologies, Inc. | Method to texture a lamina surface within a photovoltaic cell |
FR2933534B1 (fr) * | 2008-07-03 | 2011-04-01 | Soitec Silicon On Insulator | Procede de fabrication d'une structure comprenant une couche de germanium sur un substrat |
US8236603B1 (en) | 2008-09-04 | 2012-08-07 | Solexant Corp. | Polycrystalline semiconductor layers and methods for forming the same |
FR2938119B1 (fr) * | 2008-10-30 | 2011-04-22 | Soitec Silicon On Insulator | Procede de detachement de couches semi-conductrices a basse temperature |
US8415187B2 (en) * | 2009-01-28 | 2013-04-09 | Solexant Corporation | Large-grain crystalline thin-film structures and devices and methods for forming the same |
KR101096980B1 (ko) * | 2009-02-04 | 2011-12-20 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
US7927909B2 (en) * | 2009-05-01 | 2011-04-19 | Sharp Laboratories Of America, Inc. | Germanium film optical device fabricated on a glass substrate |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
FR2953640B1 (fr) | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
WO2011106232A2 (en) | 2010-02-25 | 2011-09-01 | Corning Incorporated | Compositions and methods for making low thermal expansion ceramic bodies |
JP2013527598A (ja) * | 2010-03-24 | 2013-06-27 | サイオニクス、インク. | 高められた電磁放射線検出を有するデバイス及び関連方法 |
EP2562789A4 (en) * | 2010-04-20 | 2015-03-04 | Sumitomo Electric Industries | PROCESS FOR PRODUCING COMPOSITE SUBSTRATE |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
WO2011160130A2 (en) | 2010-06-18 | 2011-12-22 | Sionyx, Inc | High speed photosensitive devices and associated methods |
CN101882624B (zh) | 2010-06-29 | 2011-09-14 | 清华大学 | 在绝缘衬底上形成有高Ge应变层的结构及形成方法 |
US8652925B2 (en) | 2010-07-19 | 2014-02-18 | International Business Machines Corporation | Method of fabricating isolated capacitors and structure thereof |
US9231061B2 (en) * | 2010-10-25 | 2016-01-05 | The Research Foundation Of State University Of New York | Fabrication of surface textures by ion implantation for antireflection of silicon crystals |
US8298923B2 (en) | 2010-10-27 | 2012-10-30 | International Business Machinces Corporation | Germanium-containing release layer for transfer of a silicon layer to a substrate |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
EP2732402A2 (en) | 2011-07-13 | 2014-05-21 | Sionyx, Inc. | Biometric imaging devices and associated methods |
CN102383192B (zh) * | 2011-07-29 | 2014-06-18 | 上海新傲科技股份有限公司 | 锗衬底的生长方法以及锗衬底 |
CN102290369B (zh) * | 2011-09-22 | 2013-12-04 | 中国科学院上海微系统与信息技术研究所 | 一种薄goi晶片及其制备方法 |
US8841161B2 (en) | 2012-02-05 | 2014-09-23 | GTAT.Corporation | Method for forming flexible solar cells |
US8916954B2 (en) | 2012-02-05 | 2014-12-23 | Gtat Corporation | Multi-layer metal support |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
CN103578934B (zh) * | 2012-07-24 | 2016-12-07 | 中国科学院微电子研究所 | 一种硅基绝缘体上锗衬底结构及其制备方法 |
US8785294B2 (en) | 2012-07-26 | 2014-07-22 | Gtat Corporation | Silicon carbide lamina |
WO2014022722A2 (en) * | 2012-08-02 | 2014-02-06 | Gtat Corporation | Epitaxial growth on thin lamina |
KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
CN103337279A (zh) * | 2013-06-26 | 2013-10-02 | 汕头万顺包装材料股份有限公司光电薄膜分公司 | 透明导电膜及具有该导电膜的触摸面板 |
US9209345B2 (en) * | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
US8980746B2 (en) * | 2013-08-13 | 2015-03-17 | Lam Research Corporation | Adhesion layer for through silicon via metallization |
CN103646909B (zh) * | 2013-12-24 | 2016-01-20 | 中国科学院上海微系统与信息技术研究所 | 绝缘体上锗goi结构的制备方法 |
US9418870B2 (en) * | 2014-02-12 | 2016-08-16 | International Business Machines Corporation | Silicon germanium-on-insulator formation by thermal mixing |
US9209301B1 (en) * | 2014-09-18 | 2015-12-08 | Soitec | Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers |
CN104701360B (zh) * | 2015-03-17 | 2017-09-29 | 福建工程学院 | 一种绝缘层上高浓度n型掺杂薄锗材料及其制作方法 |
TWI550112B (zh) * | 2015-04-10 | 2016-09-21 | 欣欣天然氣股份有限公司 | 光電轉換元件的基板的製造方法 |
WO2016196060A1 (en) * | 2015-06-01 | 2016-12-08 | Sunedison Semiconductor Limited | A method of manufacturing semiconductor-on-insulator |
WO2017065692A1 (en) * | 2015-10-13 | 2017-04-20 | Nanyang Technological University | Method of manufacturing a germanium-on-insulator substrate |
US9659960B1 (en) | 2015-12-09 | 2017-05-23 | International Business Machines Corporation | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation |
FR3061802B1 (fr) * | 2017-01-11 | 2019-08-16 | Soitec | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
CN106952861B (zh) * | 2017-04-06 | 2020-04-21 | 中国科学院微电子研究所 | 一种绝缘体上锗衬底结构及其制备方法 |
CN108447819B (zh) * | 2018-04-18 | 2021-06-11 | 厦门大学 | 一种无界面气泡绝缘层上锗键合方法 |
JP7207364B2 (ja) | 2020-05-19 | 2023-01-18 | Jfeスチール株式会社 | ロッドミルのロッド交換装置及び方法 |
CN113270505B (zh) * | 2021-04-13 | 2024-05-17 | 广东省大湾区集成电路与系统应用研究院 | 一种光电探测器结构及其制备方法 |
CN113270504A (zh) * | 2021-04-13 | 2021-08-17 | 广东省大湾区集成电路与系统应用研究院 | 一种光电探测器结构及其制备方法 |
CN115070515A (zh) * | 2022-06-20 | 2022-09-20 | 长春长光圆辰微电子技术有限公司 | 在goi生产中减少cmp大面积边缘剥落的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07153928A (ja) * | 1993-11-26 | 1995-06-16 | Toshiba Corp | 半導体基板およびその製造方法 |
JPH08148661A (ja) * | 1994-11-24 | 1996-06-07 | Sony Corp | Soi基板およびその製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US590695A (en) * | 1897-09-28 | John s | ||
US5906951A (en) * | 1997-04-30 | 1999-05-25 | International Business Machines Corporation | Strained Si/SiGe layers on insulator |
FR2789517B1 (fr) * | 1999-02-10 | 2001-03-09 | Commissariat Energie Atomique | Procede de formation sur un support d'une couche de silicium a usage optique et mise en oeuvre du procede pour la realisation de composants optiques |
JP2001036054A (ja) * | 1999-07-19 | 2001-02-09 | Mitsubishi Electric Corp | Soi基板の製造方法 |
US6633066B1 (en) * | 2000-01-07 | 2003-10-14 | Samsung Electronics Co., Ltd. | CMOS integrated circuit devices and substrates having unstrained silicon active layers |
KR100429869B1 (ko) * | 2000-01-07 | 2004-05-03 | 삼성전자주식회사 | 매몰 실리콘 저머늄층을 갖는 cmos 집적회로 소자 및기판과 그의 제조방법 |
US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
WO2002013342A2 (en) * | 2000-08-04 | 2002-02-14 | Amberwave Systems Corporation | Silicon wafer with embedded optoelectronic material for monolithic oeic |
US6524935B1 (en) * | 2000-09-29 | 2003-02-25 | International Business Machines Corporation | Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique |
JP2002305293A (ja) * | 2001-04-06 | 2002-10-18 | Canon Inc | 半導体部材の製造方法及び半導体装置の製造方法 |
US6638835B2 (en) * | 2001-12-11 | 2003-10-28 | Intel Corporation | Method for bonding and debonding films using a high-temperature polymer |
US6667528B2 (en) * | 2002-01-03 | 2003-12-23 | International Business Machines Corporation | Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same |
JP3873012B2 (ja) * | 2002-07-29 | 2007-01-24 | 株式会社東芝 | 半導体装置の製造方法 |
WO2004021420A2 (en) * | 2002-08-29 | 2004-03-11 | Massachusetts Institute Of Technology | Fabrication method for a monocrystalline semiconductor layer on a substrate |
US6897498B2 (en) * | 2003-03-31 | 2005-05-24 | Sioptical, Inc. | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform |
US6989058B2 (en) * | 2003-09-03 | 2006-01-24 | International Business Machines Corporation | Use of thin SOI to inhibit relaxation of SiGe layers |
-
2003
- 2003-11-03 US US10/700,085 patent/US7084460B2/en not_active Expired - Lifetime
-
2004
- 2004-10-27 TW TW093132613A patent/TWI331777B/zh not_active IP Right Cessation
- 2004-10-28 CN CNB2004800319539A patent/CN100399537C/zh active Active
- 2004-10-28 WO PCT/EP2004/052704 patent/WO2005043614A2/en active Application Filing
- 2004-10-28 JP JP2006537304A patent/JP4939222B2/ja not_active Expired - Fee Related
- 2004-10-28 EP EP04791333A patent/EP1687848A2/en not_active Withdrawn
- 2004-10-28 KR KR1020067008529A patent/KR100992232B1/ko not_active IP Right Cessation
- 2004-10-28 KR KR1020097027346A patent/KR100985932B1/ko not_active IP Right Cessation
-
2006
- 2006-07-06 US US11/481,525 patent/US7315065B2/en not_active Expired - Fee Related
-
2007
- 2007-10-25 US US11/924,207 patent/US7498235B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07153928A (ja) * | 1993-11-26 | 1995-06-16 | Toshiba Corp | 半導体基板およびその製造方法 |
JPH08148661A (ja) * | 1994-11-24 | 1996-06-07 | Sony Corp | Soi基板およびその製造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102201364A (zh) * | 2011-05-26 | 2011-09-28 | 北京大学 | 一种绝缘体上锗衬底的制备方法 |
KR20170017880A (ko) * | 2014-06-13 | 2017-02-15 | 인텔 코포레이션 | 웨이퍼 본딩을 위한 표면 캡슐화 |
JP2017523588A (ja) * | 2014-06-13 | 2017-08-17 | インテル・コーポレーション | ウェハ接合のための表面封入 |
KR102206378B1 (ko) * | 2014-06-13 | 2021-01-22 | 인텔 코포레이션 | 웨이퍼 본딩을 위한 표면 캡슐화 |
JP2020504462A (ja) * | 2017-01-11 | 2020-02-06 | ソワテク | 前面型撮像素子用基板および前記基板の製造方法 |
JP7170664B2 (ja) | 2017-01-11 | 2022-11-14 | ソワテク | 前面型撮像素子用基板および前記基板の製造方法 |
JP2022013244A (ja) * | 2020-07-03 | 2022-01-18 | 信越半導体株式会社 | 接合型半導体受光素子及び接合型半導体受光素子の製造方法 |
JP7354943B2 (ja) | 2020-07-03 | 2023-10-03 | 信越半導体株式会社 | 接合型半導体受光素子及び接合型半導体受光素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4939222B2 (ja) | 2012-05-23 |
WO2005043614A2 (en) | 2005-05-12 |
US20080050887A1 (en) | 2008-02-28 |
KR100985932B1 (ko) | 2010-10-06 |
US20060249790A1 (en) | 2006-11-09 |
TW200516669A (en) | 2005-05-16 |
EP1687848A2 (en) | 2006-08-09 |
US20050093100A1 (en) | 2005-05-05 |
CN100399537C (zh) | 2008-07-02 |
CN1875473A (zh) | 2006-12-06 |
US7084460B2 (en) | 2006-08-01 |
KR20100011995A (ko) | 2010-02-03 |
KR20060107755A (ko) | 2006-10-16 |
KR100992232B1 (ko) | 2010-11-05 |
US7498235B2 (en) | 2009-03-03 |
WO2005043614A3 (en) | 2005-11-03 |
TWI331777B (en) | 2010-10-11 |
US7315065B2 (en) | 2008-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4939222B2 (ja) | 半導体ウエハ及びこれを形成する方法 | |
US7157300B2 (en) | Fabrication of thin film germanium infrared sensor by bonding to silicon wafer | |
US6717213B2 (en) | Creation of high mobility channels in thin-body SOI devices | |
US7023055B2 (en) | CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding | |
US6242324B1 (en) | Method for fabricating singe crystal materials over CMOS devices | |
US6828214B2 (en) | Semiconductor member manufacturing method and semiconductor device manufacturing method | |
US20080280416A1 (en) | Techniques for Layer Transfer Processing | |
US7361528B2 (en) | Germanium infrared sensor for CMOS imagers | |
WO2010122701A1 (ja) | Soiウェーハ、その製造方法および半導体装置の製造方法 | |
US20090321829A1 (en) | Low-cost double-structure substrates and methods for their manufacture | |
JP2005311367A (ja) | ハイブリッド結晶方位上の歪みシリコンcmos | |
US7906360B2 (en) | Manufacturing process for a photodetector | |
US20050054131A1 (en) | Solution to thermal budget | |
WO2004073043A2 (en) | Semiconductor-on-insulator article and method of making same | |
JP4328708B2 (ja) | Cmosデバイスの製造方法及びcmosデバイスを備える構造 | |
WO2010087087A1 (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071003 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071003 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110719 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110922 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120131 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120224 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4939222 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |