JP2005311367A - ハイブリッド結晶方位上の歪みシリコンcmos - Google Patents
ハイブリッド結晶方位上の歪みシリコンcmos Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 305
- 239000013078 crystal Substances 0.000 title claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 title description 3
- 239000010703 silicon Substances 0.000 title description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 2
- 229910044991 metal oxide Inorganic materials 0.000 title description 2
- 150000004706 metal oxides Chemical class 0.000 title description 2
- 230000000295 complement effect Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 239000000463 material Substances 0.000 claims abstract description 88
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 96
- 229910045601 alloy Inorganic materials 0.000 claims description 72
- 239000000956 alloy Substances 0.000 claims description 72
- 235000012431 wafers Nutrition 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 30
- 238000002156 mixing Methods 0.000 claims description 24
- 125000006850 spacer group Chemical group 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 description 27
- 238000000059 patterning Methods 0.000 description 16
- 238000000137 annealing Methods 0.000 description 14
- 238000001459 lithography Methods 0.000 description 10
- 238000000407 epitaxy Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910003811 SiGeC Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000005660 hydrophilic surface Effects 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L21/76—Making of isolation regions between components
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Abstract
【解決手段】 歪みSi含有ハイブリッド基板を形成する方法、および、この方法によって形成する歪みSi含有ハイブリッド基板を提供する。本発明の方法では、半導体材料、第2の半導体層、またはその双方の上に、歪みSi層を形成する。本発明によれば、歪みSi層は、再成長半導体層または第2の半導体層のいずれかと同じ結晶方位を有する。この方法は、デバイス層の少なくとも1つが歪みSiを含むハイブリッド基板を提供する。
【選択図】 図4
Description
第1の結晶方位の第1の半導体層、この第1の半導体層の表面上に配置した埋め込み絶縁層、この埋め込み絶縁層上に配置し第1の結晶方位とは異なる第2の結晶方位の第2の半導体層を含むハイブリッド基板を設けるステップと、
第1の半導体層の表面まで延在する開口を設けるステップと、
半導体材料が第1の結晶方位を有し、第2の半導体層または再成長半導体材料の少なくとも1つの上にあるように歪みSi層が形成されることを条件として、開口内で第1の半導体層上に半導体材料を再成長させるステップであって、前記Si層が、下にある第2の半導体層または再成長半導体材料のものと一致する結晶方位を有する、ステップと、
を有する。
第1の結晶方位の第1の半導体層、この第1の半導体層の表面上に配置した埋め込み絶縁層、埋め込み絶縁層上に配置し第1の結晶方位とは異なる第2の結晶方位の第2の半導体層を含むハイブリッド基板と、
第1の半導体層の表面部分上に配置した再成長半導体材料と、
再成長半導体層または第2の半導体層の少なくとも1つの上にある歪みSi層であって、この歪みSi層が、下にある再成長半導体材料または第2の半導体層の結晶方位と一致する結晶方位を有する、歪みSi層と、
を有する。
12 第1の半導体層
12’ 第1の犠牲半導体層
14 埋め込み絶縁層
16 第2の半導体層
16’ 犠牲第2半導体層
18 緩和SiGe層
20 歪みSi層
21 第2の歪みSi層
22 ハード・マスク層
24 酸化物層
25 開口
26 窒化物層
27 スペーサ
28 再成長半導体層
50 SiGe合金層
100 ウエハ
102 底部絶縁層
Claims (30)
- 歪みSi含有ハイブリッド基板を製造する方法であって、
第1の結晶方位の第1の半導体層、前記第1の半導体層の表面上に配置した埋め込み絶縁層、前記埋め込み絶縁層上に配置し前記第1の結晶方位とは異なる第2の結晶方位の第2の半導体層を含むハイブリッド基板を設けるステップと、
前記第1の半導体層の表面まで延在する開口を設けるステップと、
半導体材料が前記第1の結晶方位を有し、前記第2の半導体層または前記再成長半導体材料の少なくとも1つの上にあるように歪みSi層が形成されることを条件として、前記開口内で前記第1の半導体層上に半導体材料を再成長させるステップであって、前記Si層が、前記下にある第2の半導体層または前記再成長半導体材料のものと一致する結晶方位を有する、ステップと、
を有する、方法。 - 前記ハイブリッド基板を設ける前記ステップが層移送技法およびボンディングを含む、請求項1に記載の方法。
- 前記ボンディングを、2つの半導体ウエハを互いに密接に接触させること、および、任意選択的に、前記接触させたウエハに外部からの力を加えることおよび加熱によって行う、請求項2に記載の方法。
- 前記第1または第2の半導体層の少なくとも1つを、犠牲半導体層および上にあるSiGe合金層を熱混合緩和SiGe合金層に変換する熱混合プロセスによって形成する、請求項1に記載の方法。
- 前記第1および第2の半導体層の双方を前記熱混合によって形成する、請求項4に記載の方法。
- 前記熱混合を、酸素含有雰囲気において、約900℃から約1350℃の温度で行う、請求項5に記載の方法。
- 前記開口を設けるステップの前に、前記第2の半導体層の上に緩和SiGe合金層および歪みSi層を形成する、請求項1に記載の方法。
- 前記開口を設ける前記ステップが、前記ハイブリッド基板上でのパターニングしたハード・マスクの形成およびエッチングを含む、請求項1に記載の方法。
- 前記再成長半導体が再成長後にくぼんでいない、請求項1に記載の方法。
- 前記再成長半導体材料が再成長後にくぼんでおり、その上に歪みSi層を形成する、請求項1に記載の方法。
- 前記歪みSi層を前記第2の半導体層の上に設ける、請求項1に記載の方法。
- 前記歪みSi層を前記再成長半導体材料の上に設ける、請求項1に記載の方法。
- 前記歪みSi層を第2の半導体層の上および前記再成長半導体材料の上に設ける、請求項1に記載の方法。
- 再成長の前に前記開口内に任意選択的なスペーサを形成する、請求項1に記載の方法。
- 前記歪みSi含有ハイブリッド基板においてデバイス分離領域を形成するステップを更に有する、請求項1に記載の方法。
- 前記歪みSi含有ハイブリッド基板上にCMOSデバイスを形成するステップを更に有する、請求項1に記載の方法。
- 前記CMOSデバイスがnFETであり、前記nFETが、(100)表面方位を有する歪みSi層の上に形成される、請求項16に記載の方法。
- Si含有ハイブリッド基板であって、
第1の結晶方位の第1の半導体層、前記第1の半導体層の表面上に配置した埋め込み絶縁層、前記埋め込み絶縁層上に配置し前記第1の結晶方位とは異なる第2の結晶方位の第2の半導体層を含むハイブリッド基板と、
前記第1の半導体層の表面部分上に配置した再成長半導体材料と、
前記再成長半導体層または前記第2の半導体層の少なくとも1つの上にある歪みSi層であって、前記歪みSi層が、前記下にある再成長半導体材料または前記第2の半導体層の結晶方位と一致する結晶方位を有する、歪みSi層と、
を有する、Si含有ハイブリッド基板。 - 前記歪みSi層が前記第2の半導体層の上に配置されている、請求項18に記載のSi含有ハイブリッド基板。
- 前記歪みSi層が前記再成長半導体材料の上に配置されている、請求項18に記載のSi含有ハイブリッド基板。
- 前記歪みSi層が第2の半導体層の上および前記再成長半導体材料の上に配置されている、請求項18に記載のSi含有ハイブリッド基板。
- 前記第1または前記第2の半導体層の少なくとも1つが熱混合緩和SiGe合金から成る、請求項18に記載のSi含有ハイブリッド基板。
- 前記第1および第2の半導体層の双方が熱混合緩和SiGe合金から成る、請求項18に記載のSi含有ハイブリッド基板。
- 前記歪みSiが緩和SiGe合金層の上に配置されている、請求項18に記載のSi含有ハイブリッド基板。
- 前記ハイブリッド基板内に配置した分離領域を更に有する、請求項18に記載のSi含有ハイブリッド基板。
- 前記歪みSi含有ハイブリッド基板上にCMOSデバイスを更に有する、請求項18に記載のSi含有ハイブリッド基板。
- 前記CMOSデバイスがnFETであり、前記nFETが、(100)表面方位を有する歪みSi層の上に形成される、請求項26に記載のSi含有ハイブリッド基板。
- 前記歪みSi層が、前記第2の半導体層の上にあるSiGe合金層の上に配置されている、請求項18に記載のSi含有ハイブリッド基板。
- 前記歪みSi層が、くぼんだSiGeを含む前記半導体材料上に配置されている、請求項18に記載のSi含有ハイブリッド基板。
- 前記第1の半導体層の下に追加の埋め込み絶縁層およびウエハがある、請求項18に記載のSi含有ハイブリッド基板。
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JP2011097062A (ja) * | 2009-10-30 | 2011-05-12 | Imec | 半導体素子およびその製造方法 |
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US7691688B2 (en) | 2010-04-06 |
US7087965B2 (en) | 2006-08-08 |
US20080254594A1 (en) | 2008-10-16 |
CN100378917C (zh) | 2008-04-02 |
US20060275961A1 (en) | 2006-12-07 |
US7402466B2 (en) | 2008-07-22 |
US20050236687A1 (en) | 2005-10-27 |
TW200539288A (en) | 2005-12-01 |
CN1722363A (zh) | 2006-01-18 |
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