TWI331777B - Method for fabricating sige-on-insulator (sgoi) and ge-on-insulator (goi) substrates - Google Patents

Method for fabricating sige-on-insulator (sgoi) and ge-on-insulator (goi) substrates Download PDF

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Publication number
TWI331777B
TWI331777B TW093132613A TW93132613A TWI331777B TW I331777 B TWI331777 B TW I331777B TW 093132613 A TW093132613 A TW 093132613A TW 93132613 A TW93132613 A TW 93132613A TW I331777 B TWI331777 B TW I331777B
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TW
Taiwan
Prior art keywords
layer
germanium
substrate
insulating layer
buried insulating
Prior art date
Application number
TW093132613A
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English (en)
Chinese (zh)
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TW200516669A (en
Inventor
Tze-Chiang Chen
Guy M Cohen
Alexander Reznicek
Devendra K Sadana
Ghavam G Shahidi
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Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Ibm filed Critical Ibm
Publication of TW200516669A publication Critical patent/TW200516669A/zh
Application granted granted Critical
Publication of TWI331777B publication Critical patent/TWI331777B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW093132613A 2003-11-03 2004-10-27 Method for fabricating sige-on-insulator (sgoi) and ge-on-insulator (goi) substrates TWI331777B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/700,085 US7084460B2 (en) 2003-11-03 2003-11-03 Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates

Publications (2)

Publication Number Publication Date
TW200516669A TW200516669A (en) 2005-05-16
TWI331777B true TWI331777B (en) 2010-10-11

Family

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Family Applications (1)

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TW093132613A TWI331777B (en) 2003-11-03 2004-10-27 Method for fabricating sige-on-insulator (sgoi) and ge-on-insulator (goi) substrates

Country Status (7)

Country Link
US (3) US7084460B2 (enExample)
EP (1) EP1687848A2 (enExample)
JP (1) JP4939222B2 (enExample)
KR (2) KR100985932B1 (enExample)
CN (1) CN100399537C (enExample)
TW (1) TWI331777B (enExample)
WO (1) WO2005043614A2 (enExample)

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Also Published As

Publication number Publication date
KR100985932B1 (ko) 2010-10-06
US20080050887A1 (en) 2008-02-28
US7315065B2 (en) 2008-01-01
US20050093100A1 (en) 2005-05-05
US20060249790A1 (en) 2006-11-09
CN100399537C (zh) 2008-07-02
CN1875473A (zh) 2006-12-06
JP4939222B2 (ja) 2012-05-23
KR20060107755A (ko) 2006-10-16
KR20100011995A (ko) 2010-02-03
EP1687848A2 (en) 2006-08-09
WO2005043614A2 (en) 2005-05-12
US7084460B2 (en) 2006-08-01
KR100992232B1 (ko) 2010-11-05
US7498235B2 (en) 2009-03-03
JP2007511068A (ja) 2007-04-26
WO2005043614A3 (en) 2005-11-03
TW200516669A (en) 2005-05-16

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