JP2007110112A5 - - Google Patents
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- Publication number
- JP2007110112A5 JP2007110112A5 JP2006272137A JP2006272137A JP2007110112A5 JP 2007110112 A5 JP2007110112 A5 JP 2007110112A5 JP 2006272137 A JP2006272137 A JP 2006272137A JP 2006272137 A JP2006272137 A JP 2006272137A JP 2007110112 A5 JP2007110112 A5 JP 2007110112A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- containing film
- gas
- etching
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 25
- 229910052799 carbon Inorganic materials 0.000 claims 25
- 239000007789 gas Substances 0.000 claims 20
- 238000005530 etching Methods 0.000 claims 17
- 239000000203 mixture Substances 0.000 claims 5
- 239000011261 inert gas Substances 0.000 claims 4
- 239000011229 interlayer Substances 0.000 claims 4
- 239000010410 layer Substances 0.000 claims 4
- 210000002381 Plasma Anatomy 0.000 claims 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 2
- 229910004018 SiF Inorganic materials 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 239000006227 byproduct Substances 0.000 claims 1
- XCCANNJCMHMXBZ-UHFFFAOYSA-N hydroxyiminosilicon Chemical compound ON=[Si] XCCANNJCMHMXBZ-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 230000000149 penetrating Effects 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050096164A KR100780944B1 (ko) | 2005-10-12 | 2005-10-12 | 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법 |
KR10-2005-0096164 | 2005-10-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007110112A JP2007110112A (ja) | 2007-04-26 |
JP2007110112A5 true JP2007110112A5 (sr) | 2009-11-19 |
JP5122106B2 JP5122106B2 (ja) | 2013-01-16 |
Family
ID=37911496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006272137A Active JP5122106B2 (ja) | 2005-10-12 | 2006-10-03 | 炭素含有膜エッチング方法及びこれを利用した半導体素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7494934B2 (sr) |
JP (1) | JP5122106B2 (sr) |
KR (1) | KR100780944B1 (sr) |
CN (1) | CN100570830C (sr) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7517804B2 (en) * | 2006-08-31 | 2009-04-14 | Micron Technologies, Inc. | Selective etch chemistries for forming high aspect ratio features and associated structures |
CN101675505B (zh) * | 2007-05-03 | 2012-11-21 | 朗姆研究公司 | 硬掩模开口以及利用硬掩模开口的蚀刻形貌控制 |
KR100950553B1 (ko) * | 2007-08-31 | 2010-03-30 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택 형성 방법 |
JP5226296B2 (ja) * | 2007-12-27 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
US8133819B2 (en) * | 2008-02-21 | 2012-03-13 | Applied Materials, Inc. | Plasma etching carbonaceous layers with sulfur-based etchants |
JP5064319B2 (ja) * | 2008-07-04 | 2012-10-31 | 東京エレクトロン株式会社 | プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体 |
JP2010041028A (ja) * | 2008-07-11 | 2010-02-18 | Tokyo Electron Ltd | 基板処理方法 |
JP2010283213A (ja) * | 2009-06-05 | 2010-12-16 | Tokyo Electron Ltd | 基板処理方法 |
TW201304162A (zh) * | 2011-05-17 | 2013-01-16 | Intevac Inc | 製作太陽能電池背側點接觸的方法 |
US8916054B2 (en) * | 2011-10-26 | 2014-12-23 | International Business Machines Corporation | High fidelity patterning employing a fluorohydrocarbon-containing polymer |
JP5932599B2 (ja) * | 2011-10-31 | 2016-06-08 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
TWI497586B (zh) | 2011-10-31 | 2015-08-21 | Hitachi High Tech Corp | Plasma etching method |
KR20130107628A (ko) | 2012-03-22 | 2013-10-02 | 삼성디스플레이 주식회사 | 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법 |
CN103377991B (zh) * | 2012-04-18 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | 沟槽的形成方法 |
US9165783B2 (en) * | 2012-11-01 | 2015-10-20 | Applied Materials, Inc. | Method of patterning a low-k dielectric film |
CN104425222B (zh) * | 2013-08-28 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | 图形化方法 |
CN104425221B (zh) * | 2013-08-28 | 2017-12-01 | 中芯国际集成电路制造(上海)有限公司 | 图形化方法 |
KR102362065B1 (ko) | 2015-05-27 | 2022-02-14 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
JP6748354B2 (ja) * | 2015-09-18 | 2020-09-02 | セントラル硝子株式会社 | ドライエッチング方法及びドライエッチング剤 |
KR20180097763A (ko) * | 2016-01-20 | 2018-08-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 측방향 하드마스크 리세스 감소를 위한 하이브리드 탄소 하드마스크 |
CN111627807B (zh) * | 2016-03-28 | 2023-08-29 | 株式会社日立高新技术 | 等离子处理方法以及等离子处理装置 |
KR102582762B1 (ko) * | 2017-05-11 | 2023-09-25 | 주성엔지니어링(주) | 기판 처리 방법 및 그를 이용한 유기 발광 소자 제조 방법 |
KR102372892B1 (ko) * | 2017-08-10 | 2022-03-10 | 삼성전자주식회사 | 집적회로 소자의 제조 방법 |
US10978302B2 (en) | 2017-11-29 | 2021-04-13 | Lam Research Corporation | Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based film |
WO2019178030A1 (en) * | 2018-03-16 | 2019-09-19 | Lam Research Corporation | Plasma etching chemistries of high aspect ratio features in dielectrics |
CN108538712B (zh) * | 2018-04-25 | 2020-08-25 | 武汉新芯集成电路制造有限公司 | 接触孔的制造方法 |
CN111446204B (zh) * | 2019-01-17 | 2024-02-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
JP2022539699A (ja) | 2019-06-24 | 2022-09-13 | ラム リサーチ コーポレーション | 選択的カーボン堆積 |
JP7321059B2 (ja) * | 2019-11-06 | 2023-08-04 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590224A (ja) * | 1991-01-22 | 1993-04-09 | Toshiba Corp | 半導体装置の製造方法 |
KR960000375B1 (ko) * | 1991-01-22 | 1996-01-05 | 가부시끼가이샤 도시바 | 반도체장치의 제조방법 |
JP3282292B2 (ja) * | 1993-06-07 | 2002-05-13 | ソニー株式会社 | ドライエッチング方法 |
US5545579A (en) * | 1995-04-04 | 1996-08-13 | Taiwan Semiconductor Manufacturing Company | Method of fabricating a sub-quarter micrometer channel field effect transistor having elevated source/drain areas and lightly doped drains |
JP3400918B2 (ja) * | 1996-11-14 | 2003-04-28 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
WO1999052135A1 (en) | 1998-04-02 | 1999-10-14 | Applied Materials, Inc. | Method for etching low k dielectrics |
US6703265B2 (en) * | 2000-08-02 | 2004-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP3526438B2 (ja) * | 2000-09-07 | 2004-05-17 | 株式会社日立製作所 | 試料のエッチング処理方法 |
JP2002093778A (ja) * | 2000-09-11 | 2002-03-29 | Toshiba Corp | 有機膜のエッチング方法およびこれを用いた半導体装置の製造方法 |
US6835663B2 (en) | 2002-06-28 | 2004-12-28 | Infineon Technologies Ag | Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity |
US20040079726A1 (en) | 2002-07-03 | 2004-04-29 | Advanced Micro Devices, Inc. | Method of using an amorphous carbon layer for improved reticle fabrication |
KR20040003652A (ko) * | 2002-07-03 | 2004-01-13 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 형성 방법 |
JP2004031892A (ja) | 2002-12-27 | 2004-01-29 | Fujitsu Ltd | アモルファスカーボンを用いた半導体装置の製造方法 |
KR100510558B1 (ko) * | 2003-12-13 | 2005-08-26 | 삼성전자주식회사 | 패턴 형성 방법 |
US7115524B2 (en) * | 2004-05-17 | 2006-10-03 | Micron Technology, Inc. | Methods of processing a semiconductor substrate |
-
2005
- 2005-10-12 KR KR1020050096164A patent/KR100780944B1/ko active IP Right Grant
-
2006
- 2006-08-29 US US11/512,026 patent/US7494934B2/en active Active
- 2006-10-03 JP JP2006272137A patent/JP5122106B2/ja active Active
- 2006-10-11 CN CNB2006101321471A patent/CN100570830C/zh active Active
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