JP2007110112A5 - - Google Patents

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Publication number
JP2007110112A5
JP2007110112A5 JP2006272137A JP2006272137A JP2007110112A5 JP 2007110112 A5 JP2007110112 A5 JP 2007110112A5 JP 2006272137 A JP2006272137 A JP 2006272137A JP 2006272137 A JP2006272137 A JP 2006272137A JP 2007110112 A5 JP2007110112 A5 JP 2007110112A5
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JP
Japan
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carbon
containing film
gas
etching
film
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JP2006272137A
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English (en)
Japanese (ja)
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JP2007110112A (ja
JP5122106B2 (ja
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Priority claimed from KR1020050096164A external-priority patent/KR100780944B1/ko
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Publication of JP2007110112A publication Critical patent/JP2007110112A/ja
Publication of JP2007110112A5 publication Critical patent/JP2007110112A5/ja
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JP2006272137A 2005-10-12 2006-10-03 炭素含有膜エッチング方法及びこれを利用した半導体素子の製造方法 Active JP5122106B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050096164A KR100780944B1 (ko) 2005-10-12 2005-10-12 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법
KR10-2005-0096164 2005-10-12

Publications (3)

Publication Number Publication Date
JP2007110112A JP2007110112A (ja) 2007-04-26
JP2007110112A5 true JP2007110112A5 (sr) 2009-11-19
JP5122106B2 JP5122106B2 (ja) 2013-01-16

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ID=37911496

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JP2006272137A Active JP5122106B2 (ja) 2005-10-12 2006-10-03 炭素含有膜エッチング方法及びこれを利用した半導体素子の製造方法

Country Status (4)

Country Link
US (1) US7494934B2 (sr)
JP (1) JP5122106B2 (sr)
KR (1) KR100780944B1 (sr)
CN (1) CN100570830C (sr)

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US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
CN101675505B (zh) * 2007-05-03 2012-11-21 朗姆研究公司 硬掩模开口以及利用硬掩模开口的蚀刻形貌控制
KR100950553B1 (ko) * 2007-08-31 2010-03-30 주식회사 하이닉스반도체 반도체 소자의 콘택 형성 방법
JP5226296B2 (ja) * 2007-12-27 2013-07-03 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
US8133819B2 (en) * 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
JP5064319B2 (ja) * 2008-07-04 2012-10-31 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体
JP2010041028A (ja) * 2008-07-11 2010-02-18 Tokyo Electron Ltd 基板処理方法
JP2010283213A (ja) * 2009-06-05 2010-12-16 Tokyo Electron Ltd 基板処理方法
TW201304162A (zh) * 2011-05-17 2013-01-16 Intevac Inc 製作太陽能電池背側點接觸的方法
US8916054B2 (en) * 2011-10-26 2014-12-23 International Business Machines Corporation High fidelity patterning employing a fluorohydrocarbon-containing polymer
JP5932599B2 (ja) * 2011-10-31 2016-06-08 株式会社日立ハイテクノロジーズ プラズマエッチング方法
TWI497586B (zh) 2011-10-31 2015-08-21 Hitachi High Tech Corp Plasma etching method
KR20130107628A (ko) 2012-03-22 2013-10-02 삼성디스플레이 주식회사 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법
CN103377991B (zh) * 2012-04-18 2016-02-17 中芯国际集成电路制造(上海)有限公司 沟槽的形成方法
US9165783B2 (en) * 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
CN104425222B (zh) * 2013-08-28 2018-09-07 中芯国际集成电路制造(上海)有限公司 图形化方法
CN104425221B (zh) * 2013-08-28 2017-12-01 中芯国际集成电路制造(上海)有限公司 图形化方法
KR102362065B1 (ko) 2015-05-27 2022-02-14 삼성전자주식회사 반도체 소자의 제조 방법
JP6748354B2 (ja) * 2015-09-18 2020-09-02 セントラル硝子株式会社 ドライエッチング方法及びドライエッチング剤
KR20180097763A (ko) * 2016-01-20 2018-08-31 어플라이드 머티어리얼스, 인코포레이티드 측방향 하드마스크 리세스 감소를 위한 하이브리드 탄소 하드마스크
CN111627807B (zh) * 2016-03-28 2023-08-29 株式会社日立高新技术 等离子处理方法以及等离子处理装置
KR102582762B1 (ko) * 2017-05-11 2023-09-25 주성엔지니어링(주) 기판 처리 방법 및 그를 이용한 유기 발광 소자 제조 방법
KR102372892B1 (ko) * 2017-08-10 2022-03-10 삼성전자주식회사 집적회로 소자의 제조 방법
US10978302B2 (en) 2017-11-29 2021-04-13 Lam Research Corporation Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based film
WO2019178030A1 (en) * 2018-03-16 2019-09-19 Lam Research Corporation Plasma etching chemistries of high aspect ratio features in dielectrics
CN108538712B (zh) * 2018-04-25 2020-08-25 武汉新芯集成电路制造有限公司 接触孔的制造方法
CN111446204B (zh) * 2019-01-17 2024-02-06 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
JP2022539699A (ja) 2019-06-24 2022-09-13 ラム リサーチ コーポレーション 選択的カーボン堆積
JP7321059B2 (ja) * 2019-11-06 2023-08-04 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

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KR960000375B1 (ko) * 1991-01-22 1996-01-05 가부시끼가이샤 도시바 반도체장치의 제조방법
JP3282292B2 (ja) * 1993-06-07 2002-05-13 ソニー株式会社 ドライエッチング方法
US5545579A (en) * 1995-04-04 1996-08-13 Taiwan Semiconductor Manufacturing Company Method of fabricating a sub-quarter micrometer channel field effect transistor having elevated source/drain areas and lightly doped drains
JP3400918B2 (ja) * 1996-11-14 2003-04-28 東京エレクトロン株式会社 半導体装置の製造方法
WO1999052135A1 (en) 1998-04-02 1999-10-14 Applied Materials, Inc. Method for etching low k dielectrics
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US6835663B2 (en) 2002-06-28 2004-12-28 Infineon Technologies Ag Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity
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KR20040003652A (ko) * 2002-07-03 2004-01-13 주식회사 하이닉스반도체 반도체 소자의 게이트 형성 방법
JP2004031892A (ja) 2002-12-27 2004-01-29 Fujitsu Ltd アモルファスカーボンを用いた半導体装置の製造方法
KR100510558B1 (ko) * 2003-12-13 2005-08-26 삼성전자주식회사 패턴 형성 방법
US7115524B2 (en) * 2004-05-17 2006-10-03 Micron Technology, Inc. Methods of processing a semiconductor substrate

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