JP2007103909A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2007103909A JP2007103909A JP2006175050A JP2006175050A JP2007103909A JP 2007103909 A JP2007103909 A JP 2007103909A JP 2006175050 A JP2006175050 A JP 2006175050A JP 2006175050 A JP2006175050 A JP 2006175050A JP 2007103909 A JP2007103909 A JP 2007103909A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- groove
- metal plate
- semiconductor device
- block body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 125
- 229910000679 solder Inorganic materials 0.000 claims abstract description 230
- 229910052751 metal Inorganic materials 0.000 claims abstract description 123
- 239000002184 metal Substances 0.000 claims abstract description 123
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- 238000007747 plating Methods 0.000 claims description 57
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 50
- 229910052737 gold Inorganic materials 0.000 claims description 50
- 239000010931 gold Substances 0.000 claims description 50
- 230000017525 heat dissipation Effects 0.000 claims description 13
- 238000003892 spreading Methods 0.000 claims description 12
- 230000007480 spreading Effects 0.000 claims description 12
- 238000005304 joining Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000003825 pressing Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/26175—Flow barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83051—Forming additional members, e.g. dam structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92147—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】一対の金属板3、4の間に半導体素子1、2を介在させるとともに、一方の金属板4と半導体素子1、2との間にブロック体6を介在させ、一方の金属板4とブロック体6とをはんだ5を介して接続し、これらをモールド樹脂7にて封止し、一対の金属板3、4の放熱面3a、4aをモールド樹脂から露出させた半導体装置において、ブロック体6とはんだ付けされる一方の金属板4におけるはんだ5が設置される領域の外周に、はんだ5の広がりを防止するための環状の溝10を設け、この溝10の内面に、ブロック体6の端面よりもはんだ5の濡れ性が大きい部材10aを設けた。
【選択図】図3
Description
図1は、本発明の第1実施形態に係る半導体装置100の概略平面構成を示す図であり、図2は、図1中のA−A線に沿った概略断面図である。なお、図1は、図2の上視図であるが、この図1においては、半導体装置100におけるモールド樹脂7内の各部の平面配置構成をモールド樹脂7を透過して示している。
図10は、本発明の第2実施形態に係る第2の金属板4の内面の平面構成を示す図であり、はんだ溝10の平面形状を示す図である。
図11は、本発明の第3実施形態に係る半導体装置200の概略断面構成を示す図である。上記第1実施形態では、両面放熱型の半導体装置100であったが、本第3実施形態の半導体装置200は、片面放熱型のものである。
なお、上記各図に示されるはんだ溝10は、一実施形態を示すものであり、その寸法や形状は、上記の図示例に限定されるものではない。上記実施形態では、はんだ溝10は断面矩形の溝形状であったが、たとえば、V溝やU溝などであってもよい。
3…第1の金属板、3a…第1の金属板の放熱面、
4…第2の金属板、4a…第2の金属板の放熱面、5…はんだ、6…ブロック体、
7…モールド樹脂、10…はんだ溝、
10a、10b…はんだの濡れ性が大きい部材としての金メッキ膜、
11…ダミーの溝。
Claims (8)
- 対向して配置されるとともに対向する面と反対側の面が放熱面(3a、4a)となっている一対の金属板(3、4)と、
前記一対の金属板(3、4)の間に介在する半導体素子(1、2)と、
一方の前記金属板(4)と前記半導体素子(1、2)との間に介在するブロック体(6)と、
前記一方の金属板(4)と前記ブロック体(6)との間に介在しこれら両者を接続するはんだ(5)と、
前記一対の金属板(3、4)、前記半導体素子(1、2)および前記ブロック体(6)を封止するモールド樹脂(7)とを備え、
前記一対の金属板(3、4)の前記放熱面(3a、4a)が前記モールド樹脂(7)から露出している半導体装置において、
前記一方の金属板(4)における前記対向する面のうち前記はんだ(5)が設置される領域の外周には、前記はんだ(5)の広がりを防止するための環状の溝(10)が設けられており、
前記溝(10)の内面には、前記ブロック体(6)の端面よりも前記はんだ(5)の濡れ性が大きい部材(10a)が設けられていることを特徴とする半導体装置。 - 前記はんだ(5)の濡れ性が大きい部材は金メッキからなる膜(10a)であることを特徴とする請求項1に記載の半導体装置。
- 前記金メッキからなる膜(10a)の膜厚は0.01μm〜0.03μmであることを特徴とする請求項2に記載の半導体装置。
- 前記ブロック体(6)の端面は、前記溝(10)の幅の範囲内に位置することを特徴とする請求項1ないし3のいずれか1つに記載の半導体装置。
- 前記ブロック体(6)は複数個設けられ、前記一方の金属板(4)において前記溝(10)は、各々の前記ブロック体(6)に対応して複数個設けられており、
各々の前記溝(10)は平面形状が異なるものであり、
前記一方の金属板(4)における前記対向する面には、当該金属板(4)の平面度を確保するためのダミーの溝(11)が設けられていることを特徴とする請求項1ないし4のいずれか1つに記載の半導体装置。 - 前記ダミーの溝(11)は、前記平面形状の異なる複数個の溝(10)の個々についてそれぞれ設けられているものであり、
前記複数個の溝(10)の個々の溝とこれに対応する前記ダミーの溝(11)とを一組としたとき、これら複数個の組同士の溝の平面形状が同一となっていることを特徴とする請求項5に記載の半導体装置。 - 金属板(3)の上に、はんだ(5)を介して半導体素子(1、2)を接合してなる半導体装置において、
前記金属板(3)における前記はんだ(5)が設置される領域の外周には、前記はんだ(5)の広がりを防止するための環状の溝(10)が設けられており、
前記溝(10)の内面には、前記半導体素子(1、2)の端面よりも前記はんだ(5)の濡れ性が大きい部材(10b)が設けられていることを特徴とする半導体装置。 - 前記はんだ(5)の濡れ性が大きい部材は、金メッキからなる膜(10b)であり、その膜厚は0.01μm〜0.1μmであることを特徴とする請求項7に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006175050A JP4702196B2 (ja) | 2005-09-12 | 2006-06-26 | 半導体装置 |
US11/516,501 US7235876B2 (en) | 2005-09-12 | 2006-09-07 | Semiconductor device having metallic plate with groove |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005263635 | 2005-09-12 | ||
JP2005263635 | 2005-09-12 | ||
JP2006175050A JP4702196B2 (ja) | 2005-09-12 | 2006-06-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007103909A true JP2007103909A (ja) | 2007-04-19 |
JP4702196B2 JP4702196B2 (ja) | 2011-06-15 |
Family
ID=37854258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006175050A Expired - Fee Related JP4702196B2 (ja) | 2005-09-12 | 2006-06-26 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7235876B2 (ja) |
JP (1) | JP4702196B2 (ja) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012186273A (ja) * | 2011-03-04 | 2012-09-27 | Denso Corp | 半導体装置、金属ブロック体及びその製造方法 |
JP2013084706A (ja) * | 2011-10-07 | 2013-05-09 | Toyota Motor Corp | 半導体装置 |
JP2013123016A (ja) * | 2011-12-12 | 2013-06-20 | Denso Corp | 半導体装置 |
JP2014146644A (ja) * | 2013-01-28 | 2014-08-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2015053343A (ja) * | 2013-09-05 | 2015-03-19 | トヨタ自動車株式会社 | 半導体装置 |
JP2015082614A (ja) * | 2013-10-23 | 2015-04-27 | 株式会社デンソー | 半導体装置 |
JP2015220429A (ja) * | 2014-05-21 | 2015-12-07 | ローム株式会社 | 半導体装置 |
JP2016033952A (ja) * | 2014-07-31 | 2016-03-10 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP2016195222A (ja) * | 2015-04-01 | 2016-11-17 | 株式会社デンソー | 接続構造体 |
JP2017054878A (ja) * | 2015-09-08 | 2017-03-16 | 株式会社村田製作所 | 半導体モジュール |
JP2017054877A (ja) * | 2015-09-08 | 2017-03-16 | 株式会社村田製作所 | 半導体モジュール |
WO2017154289A1 (ja) * | 2016-03-10 | 2017-09-14 | 株式会社デンソー | 半導体装置及び半導体装置の製造方法 |
JP2018157157A (ja) * | 2017-03-21 | 2018-10-04 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2019087656A (ja) * | 2017-11-08 | 2019-06-06 | 三菱電機株式会社 | 光モジュールおよびその製造方法 |
JP2020029827A (ja) * | 2018-08-23 | 2020-02-27 | シチズンファインデバイス株式会社 | 流体噴霧プレートの製造方法および流体噴霧プレート |
JP2020191417A (ja) * | 2019-05-23 | 2020-11-26 | 株式会社デンソー | 半導体装置 |
JP2021093502A (ja) * | 2019-12-12 | 2021-06-17 | 株式会社デンソー | 半導体装置 |
DE112015005561B4 (de) | 2014-12-10 | 2022-05-05 | Denso Corporation | Halbleitervorrichtung und verfahren zu deren fertigung |
KR20230020964A (ko) | 2020-06-09 | 2023-02-13 | 스탠리 일렉트릭 컴퍼니, 리미티드 | 반도체 발광장치 및 물살균장치 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8174127B2 (en) * | 2007-06-21 | 2012-05-08 | Stats Chippac Ltd. | Integrated circuit package system employing device stacking |
US8519525B2 (en) | 2010-07-29 | 2013-08-27 | Alpha & Omega Semiconductor, Inc. | Semiconductor encapsulation and method thereof |
CN102403295B (zh) * | 2010-09-07 | 2014-08-06 | 万国半导体股份有限公司 | 金属键接的半导体封装及其方法 |
JP5427745B2 (ja) * | 2010-09-30 | 2014-02-26 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びその製造方法 |
JP2013135022A (ja) * | 2011-12-26 | 2013-07-08 | Toyota Motor Corp | 半導体装置 |
US8877564B2 (en) * | 2012-06-29 | 2014-11-04 | Intersil Americas LLC | Solder flow impeding feature on a lead frame |
CN104247012B (zh) * | 2012-10-01 | 2017-08-25 | 富士电机株式会社 | 半导体装置及其制造方法 |
US9196602B2 (en) | 2013-05-17 | 2015-11-24 | Hong Kong Applied Science and Technology Research Institute Company Limited | High power dielectric carrier with accurate die attach layer |
CN103280438B (zh) * | 2013-05-17 | 2016-04-06 | 香港应用科技研究院有限公司 | 具有准确芯片附着层的大功率介电载体 |
JP6228490B2 (ja) * | 2014-03-04 | 2017-11-08 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
EP3226293B1 (en) | 2014-11-27 | 2022-05-11 | Mitsubishi Electric Corporation | Semiconductor module and semiconductor driving device |
JP6578900B2 (ja) | 2014-12-10 | 2019-09-25 | 株式会社デンソー | 半導体装置及びその製造方法 |
WO2017086324A1 (ja) * | 2015-11-16 | 2017-05-26 | 株式会社豊田中央研究所 | 接合構造体およびその製造方法 |
US10879211B2 (en) | 2016-06-30 | 2020-12-29 | R.S.M. Electron Power, Inc. | Method of joining a surface-mount component to a substrate with solder that has been temporarily secured |
GB2557381A (en) * | 2016-12-08 | 2018-06-20 | Cirrus Logic Int Semiconductor Ltd | Transducer packaging |
JP6874467B2 (ja) * | 2017-03-29 | 2021-05-19 | 株式会社デンソー | 半導体装置とその製造方法 |
DE102017123278A1 (de) | 2017-10-06 | 2019-04-11 | Schott Ag | Grundkörper mit angelötetem Massestift, Verfahren zu seiner Herstellung und seine Verwendungen |
US11107761B2 (en) * | 2018-02-06 | 2021-08-31 | Denso Corporation | Semiconductor device |
JP2019186403A (ja) | 2018-04-11 | 2019-10-24 | トヨタ自動車株式会社 | 半導体装置 |
JP7192241B2 (ja) * | 2018-05-01 | 2022-12-20 | 富士電機株式会社 | 半導体モジュール及び半導体モジュールの製造方法 |
JP6644196B1 (ja) * | 2019-02-01 | 2020-02-12 | 三菱電機株式会社 | 半導体装置およびその製造方法ならびに電力変換装置 |
FR3124917A1 (fr) * | 2021-06-30 | 2023-01-06 | Valeo Equipements Electriques Moteur | Module electronique avec surmoulage, dispositifs comportant un tel module electronique et procede de fabrication d’un tel module electronique |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0547902U (ja) * | 1991-11-29 | 1993-06-25 | 日立電線株式会社 | 光ファイバ固定用v溝チップ |
JPH1074653A (ja) * | 1996-08-30 | 1998-03-17 | Sony Corp | ロータリートランス |
JP2001298033A (ja) * | 2000-04-12 | 2001-10-26 | Hitachi Ltd | 半導体装置 |
JP2003124406A (ja) * | 2001-08-06 | 2003-04-25 | Denso Corp | 半導体装置 |
JP2004303869A (ja) * | 2003-03-31 | 2004-10-28 | Denso Corp | 半導体装置およびその製造方法 |
JP2005244166A (ja) * | 2004-01-30 | 2005-09-08 | Denso Corp | 半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58219754A (ja) * | 1982-06-14 | 1983-12-21 | Matsushita Electronics Corp | 半導体装置 |
JPS6065553A (ja) * | 1984-04-10 | 1985-04-15 | Sanyo Electric Co Ltd | 混成集積回路 |
JPS635537A (ja) * | 1986-06-25 | 1988-01-11 | Nec Corp | 半導体装置 |
DE3733849C1 (de) | 1987-10-07 | 1989-05-11 | Franz Arnold | Maschinenschraubstock mit Kraftverstaerker |
JPH01115127A (ja) * | 1987-10-28 | 1989-05-08 | Mitsubishi Electric Corp | 半導体装置 |
US4994897A (en) * | 1989-10-26 | 1991-02-19 | Motorola, Inc. | Multi-level semiconductor package |
JP2843684B2 (ja) * | 1990-12-27 | 1999-01-06 | 東芝コンポーネンツ株式会社 | 半導体装置 |
JPH0811858B2 (ja) | 1991-07-10 | 1996-02-07 | 有限会社熱田産業 | 横編み機における仕掛かり装置 |
TW457663B (en) * | 2000-11-08 | 2001-10-01 | Advanced Semiconductor Eng | Substrate structure of heat spreader and its package |
JP3748849B2 (ja) * | 2002-12-06 | 2006-02-22 | 三菱電機株式会社 | 樹脂封止型半導体装置 |
TWI273680B (en) * | 2003-03-27 | 2007-02-11 | Siliconware Precision Industries Co Ltd | Semiconductor package with embedded heat spreader abstract of the disclosure |
JP3934079B2 (ja) | 2003-05-08 | 2007-06-20 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4007304B2 (ja) | 2003-10-14 | 2007-11-14 | 株式会社デンソー | 半導体装置の冷却構造 |
JP4158738B2 (ja) * | 2004-04-20 | 2008-10-01 | 株式会社デンソー | 半導体モジュール実装構造、カード状半導体モジュール及びカード状半導体モジュール密着用受熱部材 |
-
2006
- 2006-06-26 JP JP2006175050A patent/JP4702196B2/ja not_active Expired - Fee Related
- 2006-09-07 US US11/516,501 patent/US7235876B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0547902U (ja) * | 1991-11-29 | 1993-06-25 | 日立電線株式会社 | 光ファイバ固定用v溝チップ |
JPH1074653A (ja) * | 1996-08-30 | 1998-03-17 | Sony Corp | ロータリートランス |
JP2001298033A (ja) * | 2000-04-12 | 2001-10-26 | Hitachi Ltd | 半導体装置 |
JP2003124406A (ja) * | 2001-08-06 | 2003-04-25 | Denso Corp | 半導体装置 |
JP2004303869A (ja) * | 2003-03-31 | 2004-10-28 | Denso Corp | 半導体装置およびその製造方法 |
JP2005244166A (ja) * | 2004-01-30 | 2005-09-08 | Denso Corp | 半導体装置 |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012186273A (ja) * | 2011-03-04 | 2012-09-27 | Denso Corp | 半導体装置、金属ブロック体及びその製造方法 |
JP2013084706A (ja) * | 2011-10-07 | 2013-05-09 | Toyota Motor Corp | 半導体装置 |
JP2013123016A (ja) * | 2011-12-12 | 2013-06-20 | Denso Corp | 半導体装置 |
JP2014146644A (ja) * | 2013-01-28 | 2014-08-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US9831160B2 (en) | 2013-09-05 | 2017-11-28 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
JP2015053343A (ja) * | 2013-09-05 | 2015-03-19 | トヨタ自動車株式会社 | 半導体装置 |
JP2015082614A (ja) * | 2013-10-23 | 2015-04-27 | 株式会社デンソー | 半導体装置 |
JP2015220429A (ja) * | 2014-05-21 | 2015-12-07 | ローム株式会社 | 半導体装置 |
JP2016033952A (ja) * | 2014-07-31 | 2016-03-10 | 富士電機株式会社 | 半導体装置およびその製造方法 |
DE112015005561B4 (de) | 2014-12-10 | 2022-05-05 | Denso Corporation | Halbleitervorrichtung und verfahren zu deren fertigung |
JP2016195222A (ja) * | 2015-04-01 | 2016-11-17 | 株式会社デンソー | 接続構造体 |
JP2017054878A (ja) * | 2015-09-08 | 2017-03-16 | 株式会社村田製作所 | 半導体モジュール |
JP2017054877A (ja) * | 2015-09-08 | 2017-03-16 | 株式会社村田製作所 | 半導体モジュール |
WO2017154289A1 (ja) * | 2016-03-10 | 2017-09-14 | 株式会社デンソー | 半導体装置及び半導体装置の製造方法 |
JP2018157157A (ja) * | 2017-03-21 | 2018-10-04 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
US10475727B2 (en) | 2017-03-21 | 2019-11-12 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device, manufacturing method for semiconductor device, and electrode plate |
JP2019087656A (ja) * | 2017-11-08 | 2019-06-06 | 三菱電機株式会社 | 光モジュールおよびその製造方法 |
JP2020029827A (ja) * | 2018-08-23 | 2020-02-27 | シチズンファインデバイス株式会社 | 流体噴霧プレートの製造方法および流体噴霧プレート |
JP7136630B2 (ja) | 2018-08-23 | 2022-09-13 | シチズンファインデバイス株式会社 | 流体噴霧プレートの製造方法 |
JP2020191417A (ja) * | 2019-05-23 | 2020-11-26 | 株式会社デンソー | 半導体装置 |
JP7156172B2 (ja) | 2019-05-23 | 2022-10-19 | 株式会社デンソー | 半導体装置 |
JP2021093502A (ja) * | 2019-12-12 | 2021-06-17 | 株式会社デンソー | 半導体装置 |
JP7327134B2 (ja) | 2019-12-12 | 2023-08-16 | 株式会社デンソー | 半導体装置 |
KR20230020964A (ko) | 2020-06-09 | 2023-02-13 | 스탠리 일렉트릭 컴퍼니, 리미티드 | 반도체 발광장치 및 물살균장치 |
Also Published As
Publication number | Publication date |
---|---|
JP4702196B2 (ja) | 2011-06-15 |
US7235876B2 (en) | 2007-06-26 |
US20070057373A1 (en) | 2007-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4702196B2 (ja) | 半導体装置 | |
JP4893303B2 (ja) | 半導体装置 | |
US20190348402A1 (en) | Semiconductor device and semiconductor device fabrication method | |
JP4840165B2 (ja) | 半導体装置 | |
JP2012033872A (ja) | 半導体装置 | |
KR101486137B1 (ko) | 방열 장치 및 그 제조 방법 | |
JP2009130044A (ja) | 半導体装置の製造方法 | |
JP2007281274A (ja) | 半導体装置 | |
US11071212B2 (en) | Semiconductor device manufacturing method | |
JP6048238B2 (ja) | 電子装置 | |
JP4888085B2 (ja) | 半導体装置の製造方法 | |
JP5869285B2 (ja) | 半導体装置 | |
JP2015095561A (ja) | 半導体装置及びその製造方法 | |
JP4952556B2 (ja) | 半導体装置およびその製造方法 | |
JP5708044B2 (ja) | 半導体装置、金属ブロック体及びその製造方法 | |
JP2019083292A (ja) | 半導体装置 | |
JP4765918B2 (ja) | 半導体装置の製造方法 | |
JP2006303375A (ja) | 電力変換装置及びその製造方法 | |
JP7147186B2 (ja) | 半導体装置 | |
JP4952555B2 (ja) | 半導体装置の製造方法 | |
WO2024157752A1 (ja) | 半導体装置の製造方法および半導体装置 | |
JP7106891B2 (ja) | 半導体装置 | |
WO2023106151A1 (ja) | 半導体装置 | |
JP6698879B2 (ja) | 半導体装置、および半導体装置の製造方法 | |
JP2021072358A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080714 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100917 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100928 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110208 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110221 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4702196 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |