|
KR101352995B1
(ko)
|
2003-02-14 |
2014-01-21 |
어플라이드 머티어리얼스, 인코포레이티드 |
수소-함유 라디칼을 이용한 자연 산화물 세정
|
|
TWI233168B
(en)
*
|
2003-09-01 |
2005-05-21 |
Macronix Int Co Ltd |
Method of cleaning surface of wafer by hydroxyl radical of deionized water
|
|
US7095179B2
(en)
*
|
2004-02-22 |
2006-08-22 |
Zond, Inc. |
Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
|
|
US20050230350A1
(en)
|
2004-02-26 |
2005-10-20 |
Applied Materials, Inc. |
In-situ dry clean chamber for front end of line fabrication
|
|
US7780793B2
(en)
|
2004-02-26 |
2010-08-24 |
Applied Materials, Inc. |
Passivation layer formation by plasma clean process to reduce native oxide growth
|
|
US20070123051A1
(en)
|
2004-02-26 |
2007-05-31 |
Reza Arghavani |
Oxide etch with nh4-nf3 chemistry
|
|
JP4032058B2
(ja)
|
2004-07-06 |
2008-01-16 |
富士通株式会社 |
半導体装置および半導体装置の製造方法
|
|
US20060016783A1
(en)
*
|
2004-07-22 |
2006-01-26 |
Dingjun Wu |
Process for titanium nitride removal
|
|
US20060130971A1
(en)
*
|
2004-12-21 |
2006-06-22 |
Applied Materials, Inc. |
Apparatus for generating plasma by RF power
|
|
US20060137711A1
(en)
*
|
2004-12-27 |
2006-06-29 |
Kun-Yuan Liao |
Single-wafer cleaning procedure
|
|
US20070272270A1
(en)
*
|
2004-12-27 |
2007-11-29 |
Kun-Yuan Liao |
Single-wafer cleaning procedure
|
|
US7144808B1
(en)
|
2005-06-13 |
2006-12-05 |
Texas Instruments Incorporated |
Integration flow to prevent delamination from copper
|
|
US8617672B2
(en)
|
2005-07-13 |
2013-12-31 |
Applied Materials, Inc. |
Localized surface annealing of components for substrate processing chambers
|
|
US7479457B2
(en)
*
|
2005-09-08 |
2009-01-20 |
Lam Research Corporation |
Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
|
|
US8317929B2
(en)
|
2005-09-16 |
2012-11-27 |
Asml Netherlands B.V. |
Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus
|
|
US7704887B2
(en)
*
|
2005-11-22 |
2010-04-27 |
Applied Materials, Inc. |
Remote plasma pre-clean with low hydrogen pressure
|
|
US7695567B2
(en)
*
|
2006-02-10 |
2010-04-13 |
Applied Materials, Inc. |
Water vapor passivation of a wall facing a plasma
|
|
US7799138B2
(en)
*
|
2006-06-22 |
2010-09-21 |
Hitachi Global Storage Technologies Netherlands |
In-situ method to reduce particle contamination in a vacuum plasma processing tool
|
|
US7981262B2
(en)
|
2007-01-29 |
2011-07-19 |
Applied Materials, Inc. |
Process kit for substrate processing chamber
|
|
US9157152B2
(en)
*
|
2007-03-29 |
2015-10-13 |
Tokyo Electron Limited |
Vapor deposition system
|
|
JP5554469B2
(ja)
*
|
2007-05-14 |
2014-07-23 |
東京エレクトロン株式会社 |
薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
|
|
KR101157938B1
(ko)
*
|
2007-05-15 |
2012-06-22 |
캐논 아네르바 가부시키가이샤 |
반도체 소자 제조 방법
|
|
US7942969B2
(en)
*
|
2007-05-30 |
2011-05-17 |
Applied Materials, Inc. |
Substrate cleaning chamber and components
|
|
JP2009010043A
(ja)
*
|
2007-06-26 |
2009-01-15 |
Tokyo Electron Ltd |
基板処理方法,基板処理装置,記録媒体
|
|
JP2009016453A
(ja)
*
|
2007-07-02 |
2009-01-22 |
Tokyo Electron Ltd |
プラズマ処理装置
|
|
US20090078675A1
(en)
*
|
2007-09-26 |
2009-03-26 |
Silverbrook Research Pty Ltd |
Method of removing photoresist
|
|
US8609545B2
(en)
|
2008-02-14 |
2013-12-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method to improve mask critical dimension uniformity (CDU)
|
|
US20090258487A1
(en)
*
|
2008-04-14 |
2009-10-15 |
Keng-Chu Lin |
Method for Improving the Reliability of Low-k Dielectric Materials
|
|
JP2009256747A
(ja)
*
|
2008-04-18 |
2009-11-05 |
Canon Anelva Corp |
マグネトロンスパッタリング装置及び薄膜の製造法
|
|
US20090269507A1
(en)
*
|
2008-04-29 |
2009-10-29 |
Sang-Ho Yu |
Selective cobalt deposition on copper surfaces
|
|
US8138076B2
(en)
*
|
2008-05-12 |
2012-03-20 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
MOSFETs having stacked metal gate electrodes and method
|
|
US20100025370A1
(en)
*
|
2008-08-04 |
2010-02-04 |
Applied Materials, Inc. |
Reactive gas distributor, reactive gas treatment system, and reactive gas treatment method
|
|
US20100130017A1
(en)
*
|
2008-11-21 |
2010-05-27 |
Axcelis Technologies, Inc. |
Front end of line plasma mediated ashing processes and apparatus
|
|
US20100270262A1
(en)
*
|
2009-04-22 |
2010-10-28 |
Applied Materials, Inc. |
Etching low-k dielectric or removing resist with a filtered ionized gas
|
|
US9324576B2
(en)
|
2010-05-27 |
2016-04-26 |
Applied Materials, Inc. |
Selective etch for silicon films
|
|
JP5698043B2
(ja)
*
|
2010-08-04 |
2015-04-08 |
株式会社ニューフレアテクノロジー |
半導体製造装置
|
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
|
US8771539B2
(en)
|
2011-02-22 |
2014-07-08 |
Applied Materials, Inc. |
Remotely-excited fluorine and water vapor etch
|
|
US9441296B2
(en)
*
|
2011-03-04 |
2016-09-13 |
Novellus Systems, Inc. |
Hybrid ceramic showerhead
|
|
US9064815B2
(en)
|
2011-03-14 |
2015-06-23 |
Applied Materials, Inc. |
Methods for etch of metal and metal-oxide films
|
|
US8999856B2
(en)
|
2011-03-14 |
2015-04-07 |
Applied Materials, Inc. |
Methods for etch of sin films
|
|
US8771536B2
(en)
|
2011-08-01 |
2014-07-08 |
Applied Materials, Inc. |
Dry-etch for silicon-and-carbon-containing films
|
|
US8679982B2
(en)
|
2011-08-26 |
2014-03-25 |
Applied Materials, Inc. |
Selective suppression of dry-etch rate of materials containing both silicon and oxygen
|
|
US8679983B2
(en)
|
2011-09-01 |
2014-03-25 |
Applied Materials, Inc. |
Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
|
|
US8927390B2
(en)
|
2011-09-26 |
2015-01-06 |
Applied Materials, Inc. |
Intrench profile
|
|
US8808563B2
(en)
|
2011-10-07 |
2014-08-19 |
Applied Materials, Inc. |
Selective etch of silicon by way of metastable hydrogen termination
|
|
WO2013070436A1
(en)
|
2011-11-08 |
2013-05-16 |
Applied Materials, Inc. |
Methods of reducing substrate dislocation during gapfill processing
|
|
SG11201403005TA
(en)
*
|
2011-12-23 |
2014-09-26 |
Applied Materials Inc |
Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
|
|
KR102107382B1
(ko)
|
2012-02-24 |
2020-05-07 |
캘리포니아 인스티튜트 오브 테크놀로지 |
그래핀 형성 방법 및 시스템
|
|
KR20140131944A
(ko)
*
|
2012-03-02 |
2014-11-14 |
도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 |
도전성막의 형성 방법
|
|
CN103377971A
(zh)
*
|
2012-04-30 |
2013-10-30 |
细美事有限公司 |
用于清洗基板的装置和方法
|
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
|
US9373517B2
(en)
|
2012-08-02 |
2016-06-21 |
Applied Materials, Inc. |
Semiconductor processing with DC assisted RF power for improved control
|
|
JP2014049529A
(ja)
*
|
2012-08-30 |
2014-03-17 |
Tokyo Electron Ltd |
プラズマ処理装置及び金属の酸化膜を洗浄する方法
|
|
US9034770B2
(en)
|
2012-09-17 |
2015-05-19 |
Applied Materials, Inc. |
Differential silicon oxide etch
|
|
US9023734B2
(en)
|
2012-09-18 |
2015-05-05 |
Applied Materials, Inc. |
Radical-component oxide etch
|
|
US9390937B2
(en)
|
2012-09-20 |
2016-07-12 |
Applied Materials, Inc. |
Silicon-carbon-nitride selective etch
|
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
|
US8765574B2
(en)
|
2012-11-09 |
2014-07-01 |
Applied Materials, Inc. |
Dry etch process
|
|
US8969212B2
(en)
|
2012-11-20 |
2015-03-03 |
Applied Materials, Inc. |
Dry-etch selectivity
|
|
US9064816B2
(en)
|
2012-11-30 |
2015-06-23 |
Applied Materials, Inc. |
Dry-etch for selective oxidation removal
|
|
US8980763B2
(en)
|
2012-11-30 |
2015-03-17 |
Applied Materials, Inc. |
Dry-etch for selective tungsten removal
|
|
US9111877B2
(en)
|
2012-12-18 |
2015-08-18 |
Applied Materials, Inc. |
Non-local plasma oxide etch
|
|
US8921234B2
(en)
|
2012-12-21 |
2014-12-30 |
Applied Materials, Inc. |
Selective titanium nitride etching
|
|
US20140179110A1
(en)
*
|
2012-12-21 |
2014-06-26 |
Applied Materials, Inc. |
Methods and apparatus for processing germanium containing material, a iii-v compound containing material, or a ii-vi compound containing material disposed on a substrate using a hot wire source
|
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
|
US9040422B2
(en)
|
2013-03-05 |
2015-05-26 |
Applied Materials, Inc. |
Selective titanium nitride removal
|
|
US8801952B1
(en)
|
2013-03-07 |
2014-08-12 |
Applied Materials, Inc. |
Conformal oxide dry etch
|
|
US10170282B2
(en)
|
2013-03-08 |
2019-01-01 |
Applied Materials, Inc. |
Insulated semiconductor faceplate designs
|
|
US20140273525A1
(en)
*
|
2013-03-13 |
2014-09-18 |
Intermolecular, Inc. |
Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films
|
|
US20140262028A1
(en)
*
|
2013-03-13 |
2014-09-18 |
Intermolecular, Inc. |
Non-Contact Wet-Process Cell Confining Liquid to a Region of a Solid Surface by Differential Pressure
|
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
|
US8895449B1
(en)
|
2013-05-16 |
2014-11-25 |
Applied Materials, Inc. |
Delicate dry clean
|
|
US9114438B2
(en)
|
2013-05-21 |
2015-08-25 |
Applied Materials, Inc. |
Copper residue chamber clean
|
|
US20150011025A1
(en)
*
|
2013-07-03 |
2015-01-08 |
Tsmc Solar Ltd. |
Enhanced selenium supply in copper indium gallium selenide processes
|
|
US9493879B2
(en)
|
2013-07-12 |
2016-11-15 |
Applied Materials, Inc. |
Selective sputtering for pattern transfer
|
|
US9773648B2
(en)
|
2013-08-30 |
2017-09-26 |
Applied Materials, Inc. |
Dual discharge modes operation for remote plasma
|
|
CN104425289B
(zh)
*
|
2013-09-11 |
2017-12-15 |
先进科技新加坡有限公司 |
利用激发的混合气体的晶粒安装装置和方法
|
|
US8956980B1
(en)
|
2013-09-16 |
2015-02-17 |
Applied Materials, Inc. |
Selective etch of silicon nitride
|
|
DE102013221029A1
(de)
*
|
2013-10-16 |
2015-04-16 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
Verfahren und Vorrichtung zur Herstellung uniformer Schichten auf bewegten Substraten und derart hergestellte Schichten
|
|
US8951429B1
(en)
|
2013-10-29 |
2015-02-10 |
Applied Materials, Inc. |
Tungsten oxide processing
|
|
US9236265B2
(en)
|
2013-11-04 |
2016-01-12 |
Applied Materials, Inc. |
Silicon germanium processing
|
|
US9576809B2
(en)
|
2013-11-04 |
2017-02-21 |
Applied Materials, Inc. |
Etch suppression with germanium
|
|
US9520303B2
(en)
|
2013-11-12 |
2016-12-13 |
Applied Materials, Inc. |
Aluminum selective etch
|
|
US9245762B2
(en)
|
2013-12-02 |
2016-01-26 |
Applied Materials, Inc. |
Procedure for etch rate consistency
|
|
US9117855B2
(en)
|
2013-12-04 |
2015-08-25 |
Applied Materials, Inc. |
Polarity control for remote plasma
|
|
US9287095B2
(en)
|
2013-12-17 |
2016-03-15 |
Applied Materials, Inc. |
Semiconductor system assemblies and methods of operation
|
|
US9263278B2
(en)
|
2013-12-17 |
2016-02-16 |
Applied Materials, Inc. |
Dopant etch selectivity control
|
|
US9190293B2
(en)
|
2013-12-18 |
2015-11-17 |
Applied Materials, Inc. |
Even tungsten etch for high aspect ratio trenches
|
|
US9269585B2
(en)
|
2014-01-10 |
2016-02-23 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method for cleaning metal gate surface
|
|
US9287134B2
(en)
|
2014-01-17 |
2016-03-15 |
Applied Materials, Inc. |
Titanium oxide etch
|
|
US9396989B2
(en)
|
2014-01-27 |
2016-07-19 |
Applied Materials, Inc. |
Air gaps between copper lines
|
|
US9293568B2
(en)
|
2014-01-27 |
2016-03-22 |
Applied Materials, Inc. |
Method of fin patterning
|
|
US9385028B2
(en)
|
2014-02-03 |
2016-07-05 |
Applied Materials, Inc. |
Air gap process
|
|
US9499898B2
(en)
|
2014-03-03 |
2016-11-22 |
Applied Materials, Inc. |
Layered thin film heater and method of fabrication
|
|
US9396992B2
(en)
*
|
2014-03-04 |
2016-07-19 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method of using a barrier-seed tool for forming fine-pitched metal interconnects
|
|
US9299575B2
(en)
|
2014-03-17 |
2016-03-29 |
Applied Materials, Inc. |
Gas-phase tungsten etch
|
|
US10854472B2
(en)
*
|
2014-03-19 |
2020-12-01 |
Globalfoundries Inc. |
Method for forming a metal gate including de-oxidation of an oxidized surface of the metal gate utilizing a reducing agent
|
|
US9299557B2
(en)
|
2014-03-19 |
2016-03-29 |
Asm Ip Holding B.V. |
Plasma pre-clean module and process
|
|
US9299537B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
|
US9299538B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
|
US9136273B1
(en)
|
2014-03-21 |
2015-09-15 |
Applied Materials, Inc. |
Flash gate air gap
|
|
US9903020B2
(en)
|
2014-03-31 |
2018-02-27 |
Applied Materials, Inc. |
Generation of compact alumina passivation layers on aluminum plasma equipment components
|
|
US9269590B2
(en)
|
2014-04-07 |
2016-02-23 |
Applied Materials, Inc. |
Spacer formation
|
|
US10113236B2
(en)
*
|
2014-05-14 |
2018-10-30 |
Applied Materials, Inc. |
Batch curing chamber with gas distribution and individual pumping
|
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
|
US9847289B2
(en)
|
2014-05-30 |
2017-12-19 |
Applied Materials, Inc. |
Protective via cap for improved interconnect performance
|
|
US9378969B2
(en)
|
2014-06-19 |
2016-06-28 |
Applied Materials, Inc. |
Low temperature gas-phase carbon removal
|
|
US9406523B2
(en)
|
2014-06-19 |
2016-08-02 |
Applied Materials, Inc. |
Highly selective doped oxide removal method
|
|
US20160013085A1
(en)
*
|
2014-07-10 |
2016-01-14 |
Applied Materials, Inc. |
In-Situ Acoustic Monitoring of Chemical Mechanical Polishing
|
|
US9425058B2
(en)
|
2014-07-24 |
2016-08-23 |
Applied Materials, Inc. |
Simplified litho-etch-litho-etch process
|
|
US10410889B2
(en)
*
|
2014-07-25 |
2019-09-10 |
Applied Materials, Inc. |
Systems and methods for electrical and magnetic uniformity and skew tuning in plasma processing reactors
|
|
US9159606B1
(en)
|
2014-07-31 |
2015-10-13 |
Applied Materials, Inc. |
Metal air gap
|
|
US9378978B2
(en)
|
2014-07-31 |
2016-06-28 |
Applied Materials, Inc. |
Integrated oxide recess and floating gate fin trimming
|
|
US9496167B2
(en)
|
2014-07-31 |
2016-11-15 |
Applied Materials, Inc. |
Integrated bit-line airgap formation and gate stack post clean
|
|
US9165786B1
(en)
|
2014-08-05 |
2015-10-20 |
Applied Materials, Inc. |
Integrated oxide and nitride recess for better channel contact in 3D architectures
|
|
US20160042916A1
(en)
*
|
2014-08-06 |
2016-02-11 |
Applied Materials, Inc. |
Post-chamber abatement using upstream plasma sources
|
|
US9659753B2
(en)
|
2014-08-07 |
2017-05-23 |
Applied Materials, Inc. |
Grooved insulator to reduce leakage current
|
|
US9553102B2
(en)
|
2014-08-19 |
2017-01-24 |
Applied Materials, Inc. |
Tungsten separation
|
|
US9355856B2
(en)
|
2014-09-12 |
2016-05-31 |
Applied Materials, Inc. |
V trench dry etch
|
|
US9368364B2
(en)
|
2014-09-24 |
2016-06-14 |
Applied Materials, Inc. |
Silicon etch process with tunable selectivity to SiO2 and other materials
|
|
US9478434B2
(en)
|
2014-09-24 |
2016-10-25 |
Applied Materials, Inc. |
Chlorine-based hardmask removal
|
|
US9613822B2
(en)
|
2014-09-25 |
2017-04-04 |
Applied Materials, Inc. |
Oxide etch selectivity enhancement
|
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
|
US20160126134A1
(en)
*
|
2014-10-29 |
2016-05-05 |
Applied Materials, Inc. |
Systems and methods for removing contamination from seed layer surface
|
|
US11637002B2
(en)
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
|
US9299583B1
(en)
|
2014-12-05 |
2016-03-29 |
Applied Materials, Inc. |
Aluminum oxide selective etch
|
|
US10224210B2
(en)
|
2014-12-09 |
2019-03-05 |
Applied Materials, Inc. |
Plasma processing system with direct outlet toroidal plasma source
|
|
US10573496B2
(en)
|
2014-12-09 |
2020-02-25 |
Applied Materials, Inc. |
Direct outlet toroidal plasma source
|
|
CN104550133B
(zh)
*
|
2014-12-11 |
2017-02-22 |
河北同光晶体有限公司 |
一种去除碳化硅单晶中空微缺陷内部、及晶片表面有机污染物的方法
|
|
US9502258B2
(en)
|
2014-12-23 |
2016-11-22 |
Applied Materials, Inc. |
Anisotropic gap etch
|
|
US9474163B2
(en)
|
2014-12-30 |
2016-10-18 |
Asm Ip Holding B.V. |
Germanium oxide pre-clean module and process
|
|
US9343272B1
(en)
|
2015-01-08 |
2016-05-17 |
Applied Materials, Inc. |
Self-aligned process
|
|
US11257693B2
(en)
|
2015-01-09 |
2022-02-22 |
Applied Materials, Inc. |
Methods and systems to improve pedestal temperature control
|
|
US9373522B1
(en)
|
2015-01-22 |
2016-06-21 |
Applied Mateials, Inc. |
Titanium nitride removal
|
|
US9449846B2
(en)
|
2015-01-28 |
2016-09-20 |
Applied Materials, Inc. |
Vertical gate separation
|
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
|
US9728437B2
(en)
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
|
US9881805B2
(en)
|
2015-03-02 |
2018-01-30 |
Applied Materials, Inc. |
Silicon selective removal
|
|
US10373850B2
(en)
|
2015-03-11 |
2019-08-06 |
Asm Ip Holding B.V. |
Pre-clean chamber and process with substrate tray for changing substrate temperature
|
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
|
US9673042B2
(en)
|
2015-09-01 |
2017-06-06 |
Applied Materials, Inc. |
Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
|
|
US20170170018A1
(en)
*
|
2015-12-14 |
2017-06-15 |
Lam Research Corporation |
Conformal doping using dopant gas on hydrogen plasma treated surface
|
|
US9741584B1
(en)
*
|
2016-05-05 |
2017-08-22 |
Lam Research Corporation |
Densification of dielectric film using inductively coupled high density plasma
|
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
|
US9865484B1
(en)
|
2016-06-29 |
2018-01-09 |
Applied Materials, Inc. |
Selective etch using material modification and RF pulsing
|
|
EP3285278A1
(en)
*
|
2016-08-16 |
2018-02-21 |
FEI Company |
Magnet used with a plasma cleaner
|
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
|
US10062585B2
(en)
|
2016-10-04 |
2018-08-28 |
Applied Materials, Inc. |
Oxygen compatible plasma source
|
|
US9721789B1
(en)
|
2016-10-04 |
2017-08-01 |
Applied Materials, Inc. |
Saving ion-damaged spacers
|
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
|
US9947549B1
(en)
|
2016-10-10 |
2018-04-17 |
Applied Materials, Inc. |
Cobalt-containing material removal
|
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
|
WO2018091888A1
(en)
*
|
2016-11-15 |
2018-05-24 |
Oxford University Innovation Limited |
Method and apparatus for applying atomic hydrogen to an object
|
|
JP6869024B2
(ja)
*
|
2016-12-20 |
2021-05-12 |
東京エレクトロン株式会社 |
パーティクル除去方法及び基板処理方法
|
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
|
US10043684B1
(en)
|
2017-02-06 |
2018-08-07 |
Applied Materials, Inc. |
Self-limiting atomic thermal etching systems and methods
|
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
|
JP7176860B6
(ja)
|
2017-05-17 |
2022-12-16 |
アプライド マテリアルズ インコーポレイテッド |
前駆体の流れを改善する半導体処理チャンバ
|
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
|
US10049891B1
(en)
|
2017-05-31 |
2018-08-14 |
Applied Materials, Inc. |
Selective in situ cobalt residue removal
|
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
|
KR102433947B1
(ko)
*
|
2017-09-29 |
2022-08-18 |
도쿄엘렉트론가부시키가이샤 |
유체로 기판을 코팅하기 위한 방법 및 시스템
|
|
US10269574B1
(en)
|
2017-10-03 |
2019-04-23 |
Mattson Technology, Inc. |
Surface treatment of carbon containing films using organic radicals
|
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
|
US10656539B2
(en)
*
|
2017-11-21 |
2020-05-19 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Radiation source for lithography process
|
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
|
TWI766433B
(zh)
|
2018-02-28 |
2022-06-01 |
美商應用材料股份有限公司 |
形成氣隙的系統及方法
|
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
|
US11387111B2
(en)
|
2018-04-13 |
2022-07-12 |
Mattson Technology, Inc. |
Processing of workpieces with reactive species generated using alkyl halide
|
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
|
US10840082B2
(en)
|
2018-08-09 |
2020-11-17 |
Lam Research Corporation |
Method to clean SnO2 film from chamber
|
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
|
WO2020081226A1
(en)
|
2018-10-15 |
2020-04-23 |
Mattson Technology, Inc. |
Ozone for selective hydrophilic surface treatment
|
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
Systems and methods for etching metals and metal derivatives
|
|
CN112335017B
(zh)
|
2018-11-16 |
2024-06-18 |
玛特森技术公司 |
腔室上光以通过减少化学成分改善刻蚀均匀性
|
|
US11437242B2
(en)
|
2018-11-27 |
2022-09-06 |
Applied Materials, Inc. |
Selective removal of silicon-containing materials
|
|
US10403492B1
(en)
|
2018-12-11 |
2019-09-03 |
Mattson Technology, Inc. |
Integration of materials removal and surface treatment in semiconductor device fabrication
|
|
US11107695B2
(en)
|
2018-12-21 |
2021-08-31 |
Beijing E-town Semiconductor Technology Co., Ltd. |
Surface smoothing of workpieces
|
|
US11721527B2
(en)
|
2019-01-07 |
2023-08-08 |
Applied Materials, Inc. |
Processing chamber mixing systems
|
|
US10920319B2
(en)
|
2019-01-11 |
2021-02-16 |
Applied Materials, Inc. |
Ceramic showerheads with conductive electrodes
|
|
DE102019205376B4
(de)
*
|
2019-04-15 |
2024-10-10 |
Forschungszentrum Jülich |
Herstellen eines ohmschen Kontakts sowie elektronisches Bauelement mit ohmschem Kontakt
|
|
TW202111144A
(zh)
|
2019-04-30 |
2021-03-16 |
美商得昇科技股份有限公司 |
使用甲基化處理的選擇性沉積
|
|
JP7285152B2
(ja)
*
|
2019-07-08 |
2023-06-01 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
|
US12486574B2
(en)
|
2019-08-23 |
2025-12-02 |
Lam Research Corporation |
Thermally controlled chandelier showerhead
|
|
US20210123139A1
(en)
*
|
2019-10-29 |
2021-04-29 |
Applied Materials, Inc. |
Method and apparatus for low resistance contact interconnection
|
|
WO2021108297A1
(en)
*
|
2019-11-27 |
2021-06-03 |
Applied Materials, Inc. |
Dual plasma pre-clean for selective gap fill
|
|
CN111081524B
(zh)
*
|
2019-12-31 |
2022-02-22 |
江苏鲁汶仪器有限公司 |
一种可旋转的法拉第清洗装置及等离子体处理系统
|
|
WO2022182510A1
(en)
*
|
2021-02-25 |
2022-09-01 |
Applied Materials, Inc. |
Methods and apparatus for ruthenium oxide reduction on extreme ultraviolet photomasks
|
|
KR102772575B1
(ko)
|
2021-05-25 |
2025-02-27 |
세메스 주식회사 |
기판 처리 장치 및 기판 처리 방법
|
|
KR20230001280A
(ko)
*
|
2021-06-28 |
2023-01-04 |
주식회사 원익아이피에스 |
챔버내부처리방법 및 기판처리방법
|
|
TW202321510A
(zh)
*
|
2021-09-21 |
2023-06-01 |
荷蘭商Asm Ip私人控股有限公司 |
反應器系統及其清潔方法
|
|
US20230268223A1
(en)
*
|
2022-02-24 |
2023-08-24 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor devices and methods of manufacture
|
|
US12439642B2
(en)
*
|
2022-06-06 |
2025-10-07 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Seam-top seal for dielectrics
|
|
US20240153774A1
(en)
*
|
2022-11-04 |
2024-05-09 |
Applied Materials, Inc. |
Multiprocess substrate treatment for enhanced substrate doping
|
|
US20240290585A1
(en)
*
|
2023-02-23 |
2024-08-29 |
Applied Materials, Inc. |
Higher pressure purge for impurity reduction in radical treatment chamber
|