JP2006505955A - チップスケールのショットキーデバイス - Google Patents
チップスケールのショットキーデバイス Download PDFInfo
- Publication number
- JP2006505955A JP2006505955A JP2004551825A JP2004551825A JP2006505955A JP 2006505955 A JP2006505955 A JP 2006505955A JP 2004551825 A JP2004551825 A JP 2004551825A JP 2004551825 A JP2004551825 A JP 2004551825A JP 2006505955 A JP2006505955 A JP 2006505955A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor device
- device package
- die
- major surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000002161 passivation Methods 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 238000011010 flushing procedure Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0605—Shape
- H01L2224/06051—Bonding areas having different shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
【解決手段】 ダイの1つの主要表面だけに配置された、少なくとも1つのカソード電極、および少なくとも1つのアノード電極と、回路基板にパッケージを表面実装するための、電極に接続されたハンダバンプとを有するチップスケールショットキーパッケージ。
Description
12 カソード電極
14 アノード電極
16 主要表面
18 ハンダバンプ
20 ダイ
22 ショットキーバリア層
24 第1部分
26 第2部分
28 シンカー
30 パッシベーション層
32 第1ガードリング
34 第2ガードリング
36 ギャップ
38 絶縁層
40 ニッケルフラッシング
42 回路基板
44 導電性パッド
Claims (18)
- 第1主要表面を有する半導体ダイと、
前記第1主要表面の一部の上に配置され、これにオーミック接触するショットキー構造体と、
前記ショットキー構造体に電気的に接続された第1電極と、
前記半導体ダイの前記第1主要表面に電気的に接続されているが、前記第1電極からは電気的にアイソレートされている第2電極と、
複数のハンダバンプとを備え、
ハンダバンプのうちの少なくとも1つは、前記1つの第1電極および第2電極に接続されている半導体デバイスパッケージ。 - 前記第1電極および第2電極の上に配置されたパッシベーション層を更に備え、このパッシベーション層の自由表面の上に、前記複数のハンダバンプが配置され、かつ前記パッシベーション層内の開口部を貫通して、前記第1電極および第2電極まで延びている、請求項1記載の半導体デバイスパッケージ。
- 第1電極が、第2電極を囲んでいる、請求項1記載の半導体デバイスパッケージ。
- 前記半導体ダイ内に形成されると共に、前記第2電極の周辺のまわりに配置されたガードリングを更に備える、請求項3記載の半導体デバイスパッケージ。
- 第2電極が、第1電極を囲んでいる、請求項1記載の半導体デバイスパッケージ。
- 前記半導体ダイ内に形成されると共に、第1電極の周辺のまわりに配置されたガードリングを更に備える、請求項5記載の半導体デバイスパッケージ。
- 前記ショットキー構造体が、モリブデンの層である、請求項1記載の半導体デバイスパッケージ。
- 第1電極が、アノード電極であり、第2電極が、カソード電極である、請求項1記載の半導体デバイスパッケージ。
- 前記半導体ダイは、低濃度にドープされた第1の部分と、高濃度にドープされた第2の部分とを備え、前記第1部分は、前記第2部分の上に配置されており、更に前記第1部分の主要表面から前記第2部分まで延びるシンカーを更に備え、前記第2電極は前記シンカーに電気的に接続されている、請求項1記載の半導体デバイスパッケージ。
- 前記シンカーは、前記第1部分内の高濃度にドープされた領域を含んでいる、請求項9記載の半導体デバイスパッケージ。
- 前記複数のハンダバンプのうちの少なくとも1つと、それに関連する電極との間に配置されたニッケルの層を更に含む、請求項1記載の半導体デバイスパッケージ。
- 前記ショットキー構造体は、パラジウムの層からなっている、請求項1記載の半導体デバイスパッケージ。
- 前記ショットキー構造体は、バナジウムの層からなっている、請求項1記載の半導体デバイスパッケージ。
- 前記第1電極は、アルミニウムをからなっている、請求項1記載の半導体デバイスパッケージ。
- 前記第2電極は、アルミニウムからなっている、請求項1記載の半導体デバイスパッケージ。
- 前記パッシベーション層は、窒化シリコンからなっている、請求項2記載の半導体デバイスパッケージ。
- 前記半導体ダイは、前記第1主要表面と反対の第2の主要表面を有し、前記第2主要表面には電気接続部がない、請求項1記載の半導体デバイスパッケージ。
- 前記半導体ダイは、前記半導体デバイスパッケージのための側方の境界を定めるサイドエッジを有する、請求項1記載の半導体デバイスパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/289,486 US7129558B2 (en) | 2002-11-06 | 2002-11-06 | Chip-scale schottky device |
PCT/US2003/035426 WO2004044984A2 (en) | 2002-11-06 | 2003-11-04 | Chip-scale schottky device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006505955A true JP2006505955A (ja) | 2006-02-16 |
Family
ID=32176074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004551825A Pending JP2006505955A (ja) | 2002-11-06 | 2003-11-04 | チップスケールのショットキーデバイス |
Country Status (9)
Country | Link |
---|---|
US (2) | US7129558B2 (ja) |
EP (1) | EP1561242A4 (ja) |
JP (1) | JP2006505955A (ja) |
KR (1) | KR100750696B1 (ja) |
CN (1) | CN100380679C (ja) |
AU (1) | AU2003291341A1 (ja) |
HK (1) | HK1084507A1 (ja) |
TW (1) | TWI241024B (ja) |
WO (1) | WO2004044984A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007180491A (ja) * | 2005-12-27 | 2007-07-12 | Hynix Semiconductor Inc | 半導体素子のキャパシタの製造方法 |
WO2011152255A1 (ja) * | 2010-06-02 | 2011-12-08 | 株式会社村田製作所 | Esd保護デバイス |
JP2018511933A (ja) * | 2015-02-20 | 2018-04-26 | ヴィシェイ ジェネラル セミコンダクター,エルエルシー | 大きな結合パッド及び低下した接触抵抗を有するGaNベースのショットキーダイオード |
JP2018139308A (ja) * | 2011-12-16 | 2018-09-06 | エプコス アクチエンゲゼルシャフトEpcos Ag | 電気的構成素子及びその製造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7129558B2 (en) * | 2002-11-06 | 2006-10-31 | International Rectifier Corporation | Chip-scale schottky device |
FR2857506A1 (fr) * | 2003-07-11 | 2005-01-14 | St Microelectronics Sa | Diode de redressement et de protection |
JP4469584B2 (ja) * | 2003-09-12 | 2010-05-26 | 株式会社東芝 | 半導体装置 |
JP2006024829A (ja) * | 2004-07-09 | 2006-01-26 | Toshiba Corp | 半導体装置及びその製造方法 |
US7821133B2 (en) * | 2005-10-28 | 2010-10-26 | International Rectifier Corporation | Contact pad structure for flip chip semiconductor die |
DE102006033319B4 (de) * | 2006-07-17 | 2010-09-30 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements in Halbleiterchipgröße mit einem Halbleiterchip |
US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
KR100780967B1 (ko) * | 2006-12-07 | 2007-12-03 | 삼성전자주식회사 | 고전압용 쇼트키 다이오드 구조체 |
US8710665B2 (en) | 2008-10-06 | 2014-04-29 | Infineon Technologies Ag | Electronic component, a semiconductor wafer and a method for producing an electronic component |
US8164154B1 (en) | 2010-12-17 | 2012-04-24 | Aram Tanielian | Low profile Schottky barrier diode for solar cells and solar panels and method of fabrication thereof |
US8791551B2 (en) * | 2012-03-13 | 2014-07-29 | Formosa Microsemi Co., Ltd. | Well-through type diode element/component and manufacturing method for them |
CN105938848A (zh) * | 2016-02-03 | 2016-09-14 | 杭州立昂微电子股份有限公司 | 一种用于芯片级封装的肖特基芯片 |
CN105938849A (zh) * | 2016-02-03 | 2016-09-14 | 杭州立昂微电子股份有限公司 | 一种用于芯片级封装的肖特基芯片的制造方法 |
CN105655412A (zh) * | 2016-03-30 | 2016-06-08 | 南通明芯微电子有限公司 | 一种肖特基二极管 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55125663A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Semiconductor integrated circuit |
JPS60166164U (ja) * | 1984-04-10 | 1985-11-05 | 三洋電機株式会社 | シヨツトキバリヤダイオ−ド |
JPS62229974A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | シヨツトキ−ダイオ−ド及びその製造方法 |
JPH065842A (ja) * | 1992-06-16 | 1994-01-14 | Fujitsu Ltd | 半導体装置 |
JPH0637093A (ja) * | 1992-07-14 | 1994-02-10 | Sanken Electric Co Ltd | バンプ電極の形成方法 |
JPH10284741A (ja) * | 1997-03-31 | 1998-10-23 | Toko Inc | ダイオード装置 |
JPH10335679A (ja) * | 1997-06-02 | 1998-12-18 | Fuji Electric Co Ltd | ダイオードとその製造方法 |
JP2000323727A (ja) * | 1999-05-13 | 2000-11-24 | Matsushita Electronics Industry Corp | ショットキバリアダイオード |
JP2001077379A (ja) * | 1999-09-03 | 2001-03-23 | Nippon Inter Electronics Corp | ショットキーバリア半導体装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4250520A (en) | 1979-03-14 | 1981-02-10 | Rca Corporation | Flip chip mounted diode |
US4899199A (en) * | 1983-09-30 | 1990-02-06 | International Rectifier Corporation | Schottky diode with titanium or like layer contacting the dielectric layer |
JPS60166164A (ja) | 1984-02-07 | 1985-08-29 | Sumitomo Light Metal Ind Ltd | 板状熱交換器の製造方法 |
US4669180A (en) * | 1984-12-18 | 1987-06-02 | Advanced Micro Devices, Inc. | Method of forming emitter coupled logic bipolar memory cell using polysilicon Schottky diodes for coupling |
US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
US5243208A (en) * | 1987-05-27 | 1993-09-07 | Hitachi, Ltd. | Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array |
JPH03203265A (ja) * | 1989-12-28 | 1991-09-04 | Sony Corp | 半導体装置 |
US5418185A (en) * | 1993-01-21 | 1995-05-23 | Texas Instruments Incorporated | Method of making schottky diode with guard ring |
US5889315A (en) * | 1994-08-18 | 1999-03-30 | National Semiconductor Corporation | Semiconductor structure having two levels of buried regions |
US6124179A (en) * | 1996-09-05 | 2000-09-26 | Adamic, Jr.; Fred W. | Inverted dielectric isolation process |
JPH08204210A (ja) * | 1995-01-20 | 1996-08-09 | Rohm Co Ltd | ショットキーバリアダイオード |
US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
DE19616605C2 (de) * | 1996-04-25 | 1998-03-26 | Siemens Ag | Schottkydiodenanordnung und Verfahren zur Herstellung |
US5859465A (en) * | 1996-10-15 | 1999-01-12 | International Rectifier Corporation | High voltage power schottky with aluminum barrier metal spaced from first diffused ring |
JP2001111034A (ja) * | 1999-10-07 | 2001-04-20 | Fuji Electric Co Ltd | プレーナ型半導体装置 |
CN1301046A (zh) * | 1999-12-17 | 2001-06-27 | 艾伦·Y·谭 | 肖特基二极管、整流器及其制造方法 |
JP2001196606A (ja) * | 2000-01-11 | 2001-07-19 | Mitsubishi Electric Corp | ダイオード |
US6653740B2 (en) * | 2000-02-10 | 2003-11-25 | International Rectifier Corporation | Vertical conduction flip-chip device with bump contacts on single surface |
US6682968B2 (en) * | 2000-07-27 | 2004-01-27 | Sanyo Electric Co., Ltd. | Manufacturing method of Schottky barrier diode |
US6657273B2 (en) * | 2001-06-12 | 2003-12-02 | International Rectifirer Corporation | Termination for high voltage schottky diode |
TW498471B (en) | 2001-07-13 | 2002-08-11 | Taiwan Semiconductor Mfg | Manufacturing method for solder bump |
US7129558B2 (en) * | 2002-11-06 | 2006-10-31 | International Rectifier Corporation | Chip-scale schottky device |
-
2002
- 2002-11-06 US US10/289,486 patent/US7129558B2/en not_active Expired - Lifetime
-
2003
- 2003-11-04 JP JP2004551825A patent/JP2006505955A/ja active Pending
- 2003-11-04 EP EP03768734A patent/EP1561242A4/en not_active Withdrawn
- 2003-11-04 KR KR1020057007637A patent/KR100750696B1/ko active IP Right Grant
- 2003-11-04 AU AU2003291341A patent/AU2003291341A1/en not_active Abandoned
- 2003-11-04 WO PCT/US2003/035426 patent/WO2004044984A2/en active Application Filing
- 2003-11-04 CN CNB2003801026028A patent/CN100380679C/zh not_active Expired - Lifetime
- 2003-11-05 TW TW092130929A patent/TWI241024B/zh not_active IP Right Cessation
-
2006
- 2006-06-12 HK HK06106722A patent/HK1084507A1/xx not_active IP Right Cessation
- 2006-10-18 US US11/582,755 patent/US8921969B2/en not_active Expired - Lifetime
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55125663A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Semiconductor integrated circuit |
JPS60166164U (ja) * | 1984-04-10 | 1985-11-05 | 三洋電機株式会社 | シヨツトキバリヤダイオ−ド |
JPS62229974A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | シヨツトキ−ダイオ−ド及びその製造方法 |
JPH065842A (ja) * | 1992-06-16 | 1994-01-14 | Fujitsu Ltd | 半導体装置 |
JPH0637093A (ja) * | 1992-07-14 | 1994-02-10 | Sanken Electric Co Ltd | バンプ電極の形成方法 |
JPH10284741A (ja) * | 1997-03-31 | 1998-10-23 | Toko Inc | ダイオード装置 |
JPH10335679A (ja) * | 1997-06-02 | 1998-12-18 | Fuji Electric Co Ltd | ダイオードとその製造方法 |
JP2000323727A (ja) * | 1999-05-13 | 2000-11-24 | Matsushita Electronics Industry Corp | ショットキバリアダイオード |
JP2001077379A (ja) * | 1999-09-03 | 2001-03-23 | Nippon Inter Electronics Corp | ショットキーバリア半導体装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007180491A (ja) * | 2005-12-27 | 2007-07-12 | Hynix Semiconductor Inc | 半導体素子のキャパシタの製造方法 |
WO2011152255A1 (ja) * | 2010-06-02 | 2011-12-08 | 株式会社村田製作所 | Esd保護デバイス |
US9136228B2 (en) | 2010-06-02 | 2015-09-15 | Murata Manufacturing Co., Ltd. | ESD protection device |
JP2018139308A (ja) * | 2011-12-16 | 2018-09-06 | エプコス アクチエンゲゼルシャフトEpcos Ag | 電気的構成素子及びその製造方法 |
JP2018511933A (ja) * | 2015-02-20 | 2018-04-26 | ヴィシェイ ジェネラル セミコンダクター,エルエルシー | 大きな結合パッド及び低下した接触抵抗を有するGaNベースのショットキーダイオード |
Also Published As
Publication number | Publication date |
---|---|
EP1561242A4 (en) | 2007-08-01 |
HK1084507A1 (en) | 2006-07-28 |
WO2004044984A3 (en) | 2004-07-15 |
US8921969B2 (en) | 2014-12-30 |
WO2004044984A2 (en) | 2004-05-27 |
US7129558B2 (en) | 2006-10-31 |
CN100380679C (zh) | 2008-04-09 |
CN1708850A (zh) | 2005-12-14 |
TWI241024B (en) | 2005-10-01 |
TW200409355A (en) | 2004-06-01 |
EP1561242A2 (en) | 2005-08-10 |
AU2003291341A1 (en) | 2004-06-03 |
KR100750696B1 (ko) | 2007-08-22 |
US20070034984A1 (en) | 2007-02-15 |
US20040084770A1 (en) | 2004-05-06 |
KR20050083881A (ko) | 2005-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8921969B2 (en) | Chip-scale Schottky device | |
JP5492367B2 (ja) | 窒化ガリウム半導体デバイス用のパッケージ | |
US5001545A (en) | Formed top contact for non-flat semiconductor devices | |
US6897561B2 (en) | Semiconductor power device having a diamond shaped metal interconnect scheme | |
JP2008518445A (ja) | 炭化ケイ素デバイス用のはんだ付け可能上部金属 | |
JP7199921B2 (ja) | 半導体装置 | |
US8937317B2 (en) | Method and system for co-packaging gallium nitride electronics | |
US20090072369A1 (en) | Semiconductor device | |
US11658093B2 (en) | Semiconductor element with electrode having first section and second sections in contact with the first section, and semiconductor device | |
US5110761A (en) | Formed top contact for non-flat semiconductor devices | |
CN114846593A (zh) | 半导体装置 | |
JP2020077694A (ja) | 半導体装置 | |
TW202226485A (zh) | 半導體裝置 | |
JP2019145667A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2022163499A (ja) | 半導体装置 | |
KR20190008464A (ko) | 실리콘-전도층-실리콘 스택 구조의 반도체 소자 | |
JP4030273B2 (ja) | 半導体装置 | |
CN115398608A (zh) | 半导体器件 | |
CN114026684A (zh) | 半导体器件 | |
US9362221B2 (en) | Surface mountable power components | |
US11855166B2 (en) | Semiconductor device including sub-cell disposed at chip center | |
CN109994445B (zh) | 半导体元件和半导体装置 | |
CN117476634A (zh) | Igbt器件结构及其制备方法 | |
JP2022188893A (ja) | 半導体装置 | |
CN115810602A (zh) | 半导体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080401 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081125 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090206 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090216 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090525 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090818 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091218 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100212 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100617 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100713 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100713 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20100820 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110513 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110518 |