JP2018139308A - 電気的構成素子及びその製造方法 - Google Patents
電気的構成素子及びその製造方法 Download PDFInfo
- Publication number
- JP2018139308A JP2018139308A JP2018082551A JP2018082551A JP2018139308A JP 2018139308 A JP2018139308 A JP 2018139308A JP 2018082551 A JP2018082551 A JP 2018082551A JP 2018082551 A JP2018082551 A JP 2018082551A JP 2018139308 A JP2018139308 A JP 2018139308A
- Authority
- JP
- Japan
- Prior art keywords
- electrical component
- layer
- metal composite
- flexible metal
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000002905 metal composite material Substances 0.000 claims abstract description 75
- 238000002161 passivation Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 149
- 239000011241 protective layer Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- 229910010293 ceramic material Inorganic materials 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000007598 dipping method Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229920002994 synthetic fiber Polymers 0.000 claims description 3
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- 239000000919 ceramic Substances 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 12
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- HMHVCUVYZFYAJI-UHFFFAOYSA-N Sultiame Chemical compound C1=CC(S(=O)(=O)N)=CC=C1N1S(=O)(=O)CCCC1 HMHVCUVYZFYAJI-UHFFFAOYSA-N 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- -1 for example Substances 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 230000003078 antioxidant effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/06—Mounting, supporting or suspending transformers, reactors or choke coils not being of the signal type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/06—Mounting, supporting or suspending transformers, reactors or choke coils not being of the signal type
- H01F2027/065—Mounting on printed circuit boards
Abstract
Description
2 基体
3 金属質接点構造
31 内部電極
32 金属化ビア
4 開口
5 不動態層
6 外部接点
7 可撓性金属複合層
8 第1保護層
9 第保護層
10,11 ドープ領域
12 はんだボール
101,102,103,104,105 ステップ
Claims (12)
- 基体(2)、前記基体(2)に直接接触する金属質接点構造(3)、及び開口(4)を設けた電気絶縁性の不動態層(5)を有する電気的構成素子(1)であって、前記金属質接点構造(3)は前記開口(4)を経て外部接点(6)に接続し、また前記外部接点(6)は可撓性金属複合層(7)により掩蔽及び包被され、
前記基体(2)は、半導体材料を有し、前記金属質接点構造(3)は、前記基体(2)のドープ領域(10、11)に直接接触している、電気的構成素子。 - 請求項1に記載の電気的構成素子において、前記外部接点(6)は、前記開口(4)に配置する、電気的構成素子。
- 請求項1または請求項2に記載の電気的構成素子において、前記可撓性金属複合層(7)は、前記不動態層(5)の部分領域に直接接触する、電気的構成素子。
- 請求項1〜3のうちいずれか一項に記載の電気的構成素子において、前記金属質接点構造(3)を前記基体(2)の外面に塗布し、また前記基体(2)の外部接点(6)は前記金属質接点構造(3)に電気的に接触する、電気的構成素子。
- 請求項1〜4のうちいずれか一項に記載の電気的構成素子において、前記不動態層(5)は、ガラス及び/又はセラミック材料を含む、電気的構成素子。
- 請求項1〜5のうちいずれか一項に記載の電気的構成素子において、前記可撓性金属複合層(7)は、合成材料、とくに、ポリマーを有する、電気的構成素子。
- 請求項1〜6のうちいずれか一項に記載の電気的構成素子において、前記可撓性金属複合層(7)の前記基体(2)側とは反対側に第1保護層(8)を配置する、電気的構成素子。
- 請求項7に記載の電気的構成素子において、前記第1保護層(8)上に第2保護層(9)を配置する、電気的構成素子。
- 請求項8に記載の電気的構成素子において、前記第1保護層(8)はニッケルを含み、また前記第2保護層(9)は錫を含む、電気的構成素子。
- 請求項1〜9のうちいずれか一項に記載の電気的構成素子において、前記可撓性金属複合層(7)は、銅を含む、電気的構成素子。
- 請求項1〜10のうちいずれか一項に記載の電気的構成素子を製造する方法であって、
・金属質接点構造(3)並びに電気絶縁性の不動態層(5)を設けた基体(2)を準備するステップと、
・前記外部接点(6)が前記金属質接点構造(3)に直接電気的に接触するよう、前記基体(2)上にスクリーン印刷法、スパッタ法又は浸漬プロセスによって、外部接点(6)を塗布するステップと、
・前記外部接点(6)が可撓性金属複合層(7)により掩蔽及び包被されるよう、可撓性金属複合層(7)をスクリーン印刷法又は浸漬プロセスによって塗布するステップと、
を有する、方法。 - 請求項11に記載の方法において、前記外部接点(6)の塗布後、及び/又は前記可撓性金属複合層(7)の塗布後に、熱処理を行う、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011056515.9A DE102011056515B4 (de) | 2011-12-16 | 2011-12-16 | Elektrisches Bauelement und Verfahren zur Herstellung eines elektrischen Bauelements |
DE102011056515.9 | 2011-12-16 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016028243A Division JP2016122855A (ja) | 2011-12-16 | 2016-02-17 | 電気的構成素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018139308A true JP2018139308A (ja) | 2018-09-06 |
JP6783265B2 JP6783265B2 (ja) | 2020-11-11 |
Family
ID=47080449
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014546366A Active JP6130393B2 (ja) | 2011-12-16 | 2012-10-02 | 電気的構成素子及びその製造方法 |
JP2016028243A Pending JP2016122855A (ja) | 2011-12-16 | 2016-02-17 | 電気的構成素子及びその製造方法 |
JP2018082551A Active JP6783265B2 (ja) | 2011-12-16 | 2018-04-23 | 電気的構成素子及びその製造方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014546366A Active JP6130393B2 (ja) | 2011-12-16 | 2012-10-02 | 電気的構成素子及びその製造方法 |
JP2016028243A Pending JP2016122855A (ja) | 2011-12-16 | 2016-02-17 | 電気的構成素子及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9805846B2 (ja) |
EP (1) | EP2791949B1 (ja) |
JP (3) | JP6130393B2 (ja) |
DE (1) | DE102011056515B4 (ja) |
WO (1) | WO2013087243A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200138955A (ko) * | 2019-06-03 | 2020-12-11 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 그 실장 기판 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014112678A1 (de) * | 2014-09-03 | 2016-03-03 | Epcos Ag | Elektrisches Bauelement, Bauelementanordnung und Verfahren zur Herstellung eines elektrischen Bauelements sowie einer Bauelementanordnung |
KR101792381B1 (ko) * | 2016-01-04 | 2017-11-01 | 삼성전기주식회사 | 전자부품 및 그 제조방법 |
JP2019067793A (ja) * | 2017-09-28 | 2019-04-25 | Tdk株式会社 | 電子部品 |
KR102560377B1 (ko) * | 2018-04-25 | 2023-07-27 | 삼성전기주식회사 | 인덕터 |
FR3080957B1 (fr) | 2018-05-07 | 2020-07-10 | I-Ten | Electrodes mesoporeuses pour dispositifs electrochimiques en couches minces |
WO2020018651A1 (en) | 2018-07-18 | 2020-01-23 | Avx Corporation | Varistor passivation layer and method of making the same |
FR3091040B1 (fr) * | 2018-12-24 | 2022-12-09 | I Ten | Organe de contact d’un dispositif electronique ou electrochimique |
JP2020202220A (ja) * | 2019-06-07 | 2020-12-17 | 株式会社村田製作所 | 積層セラミック電子部品 |
CN117203752A (zh) | 2021-04-22 | 2023-12-08 | Tdk电子股份有限公司 | 金属化半导体管芯及其制造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55125627A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Formation of electrode for semiconductor device |
JPH11509041A (ja) * | 1995-06-30 | 1999-08-03 | セムテック・コーポレイション | デュアルベース構造を使用する低電圧パンチスルー過渡サプレッサー |
JP2006505955A (ja) * | 2002-11-06 | 2006-02-16 | インターナショナル レクティファイアー コーポレイション | チップスケールのショットキーデバイス |
WO2008001542A1 (fr) * | 2006-06-28 | 2008-01-03 | Murata Manufacturing Co., Ltd. | Composant électronique en céramique et son procédé de fabrication |
JP2009218354A (ja) * | 2008-03-10 | 2009-09-24 | Tdk Corp | 表面実装型電子部品及び表面実装型電子部品アレイ |
JP2010080703A (ja) * | 2008-09-26 | 2010-04-08 | Tdk Corp | セラミック積層電子部品およびその製造方法 |
JP2011018874A (ja) * | 2009-07-09 | 2011-01-27 | Samsung Electro-Mechanics Co Ltd | セラミックス電子部品 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3528077A1 (de) * | 1985-08-05 | 1987-02-12 | Siemens Ag | Elektrischer kondensator, insbesondere in chip-bauweise |
JPH04257211A (ja) * | 1991-02-08 | 1992-09-11 | Murata Mfg Co Ltd | チップ型電子部品 |
JPH0696907A (ja) * | 1992-09-11 | 1994-04-08 | Murata Mfg Co Ltd | チップバリスタの製造方法 |
JP3293440B2 (ja) | 1995-12-05 | 2002-06-17 | 株式会社村田製作所 | 積層セラミック電子部品及びその製造方法 |
JPH10284343A (ja) * | 1997-04-11 | 1998-10-23 | Mitsubishi Materials Corp | チップ型電子部品 |
JPH11162771A (ja) | 1997-11-25 | 1999-06-18 | Kyocera Corp | 積層セラミックコンデンサ |
JP3853565B2 (ja) | 2000-04-14 | 2006-12-06 | 松下電器産業株式会社 | 薄膜積層体とコンデンサ及びこれらの製造方法と製造装置 |
US6767819B2 (en) | 2001-09-12 | 2004-07-27 | Dow Corning Corporation | Apparatus with compliant electrical terminals, and methods for forming same |
DE60302552T2 (de) | 2002-02-06 | 2006-08-10 | Koninklijke Philips Electronics N.V. | Wiederbeschreibbares optisches speichermedium und verwendung eines solchen mediums |
JP4400583B2 (ja) * | 2006-03-01 | 2010-01-20 | Tdk株式会社 | 積層コンデンサ及びその製造方法 |
DE102007007113A1 (de) | 2007-02-13 | 2008-08-28 | Epcos Ag | Vielschicht-Bauelement |
JP4957394B2 (ja) * | 2007-06-04 | 2012-06-20 | 株式会社村田製作所 | セラミック電子部品及びその製造方法 |
US7808770B2 (en) * | 2007-06-27 | 2010-10-05 | Murata Manufacturing Co., Ltd. | Monolithic ceramic capacitor |
DE102007031510A1 (de) * | 2007-07-06 | 2009-01-08 | Epcos Ag | Elektrisches Vielschichtbauelement |
JP4985485B2 (ja) * | 2008-03-10 | 2012-07-25 | Tdk株式会社 | 表面実装型電子部品及び電子部品の実装構造 |
WO2009117599A2 (en) * | 2008-03-20 | 2009-09-24 | Greatbatch Ltd. | Shielded three-terminal flat-through emi/energy dissipating filter |
US8125762B2 (en) * | 2008-08-11 | 2012-02-28 | Vishay Sprague, Inc. | High voltage capacitors |
JP5211970B2 (ja) * | 2008-09-17 | 2013-06-12 | 株式会社村田製作所 | セラミック電子部品の製造方法 |
JP2010123613A (ja) * | 2008-11-17 | 2010-06-03 | Murata Mfg Co Ltd | セラミック電子部品及びセラミック電子部品の実装構造 |
JP5439954B2 (ja) * | 2009-06-01 | 2014-03-12 | 株式会社村田製作所 | 積層型電子部品およびその製造方法 |
JP5324390B2 (ja) | 2009-10-22 | 2013-10-23 | Tdk株式会社 | 積層電子部品 |
JP2011228334A (ja) | 2010-04-15 | 2011-11-10 | Murata Mfg Co Ltd | セラミック電子部品 |
JP5768272B2 (ja) | 2011-02-10 | 2015-08-26 | コーア株式会社 | チップ部品およびその製造方法 |
-
2011
- 2011-12-16 DE DE102011056515.9A patent/DE102011056515B4/de active Active
-
2012
- 2012-10-02 EP EP12778650.7A patent/EP2791949B1/de active Active
- 2012-10-02 US US14/365,968 patent/US9805846B2/en active Active
- 2012-10-02 WO PCT/EP2012/069431 patent/WO2013087243A1/de active Application Filing
- 2012-10-02 JP JP2014546366A patent/JP6130393B2/ja active Active
-
2016
- 2016-02-17 JP JP2016028243A patent/JP2016122855A/ja active Pending
-
2018
- 2018-04-23 JP JP2018082551A patent/JP6783265B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55125627A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Formation of electrode for semiconductor device |
JPH11509041A (ja) * | 1995-06-30 | 1999-08-03 | セムテック・コーポレイション | デュアルベース構造を使用する低電圧パンチスルー過渡サプレッサー |
JP2006505955A (ja) * | 2002-11-06 | 2006-02-16 | インターナショナル レクティファイアー コーポレイション | チップスケールのショットキーデバイス |
WO2008001542A1 (fr) * | 2006-06-28 | 2008-01-03 | Murata Manufacturing Co., Ltd. | Composant électronique en céramique et son procédé de fabrication |
JP2009218354A (ja) * | 2008-03-10 | 2009-09-24 | Tdk Corp | 表面実装型電子部品及び表面実装型電子部品アレイ |
JP2010080703A (ja) * | 2008-09-26 | 2010-04-08 | Tdk Corp | セラミック積層電子部品およびその製造方法 |
JP2011018874A (ja) * | 2009-07-09 | 2011-01-27 | Samsung Electro-Mechanics Co Ltd | セラミックス電子部品 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200138955A (ko) * | 2019-06-03 | 2020-12-11 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 그 실장 기판 |
KR102254876B1 (ko) * | 2019-06-03 | 2021-05-24 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 그 실장 기판 |
US11081283B2 (en) | 2019-06-03 | 2021-08-03 | Samsung Electro-Mechanics Co., Ltd. | Multi-layered ceramic electronic component and mounting board thereof |
Also Published As
Publication number | Publication date |
---|---|
WO2013087243A1 (de) | 2013-06-20 |
US20140319974A1 (en) | 2014-10-30 |
EP2791949A1 (de) | 2014-10-22 |
US9805846B2 (en) | 2017-10-31 |
DE102011056515A1 (de) | 2013-06-20 |
DE102011056515B4 (de) | 2023-12-07 |
JP2015506103A (ja) | 2015-02-26 |
EP2791949B1 (de) | 2022-11-30 |
JP2016122855A (ja) | 2016-07-07 |
JP6130393B2 (ja) | 2017-05-17 |
JP6783265B2 (ja) | 2020-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6783265B2 (ja) | 電気的構成素子及びその製造方法 | |
US9406603B2 (en) | Semiconductor device and method for manufacturing the semiconductor device | |
JP4915058B2 (ja) | Led部品およびその製造方法 | |
US7183652B2 (en) | Electronic component and electronic configuration | |
JP5239236B2 (ja) | 電子部品およびその製造方法 | |
US20100289612A1 (en) | Current protection device and the method for forming the same | |
KR20080010435A (ko) | 세라믹 전자부품 및 그 제조방법 | |
US9301404B2 (en) | Ceramic substrate and method of manufacturing the same | |
WO2006114267A2 (en) | Electronic component and electronic configuration | |
US9338897B2 (en) | Ceramic substrate, and method of manufacturing the same | |
WO2020195523A1 (ja) | チップ型セラミック電子部品およびその製造方法 | |
WO2011007519A1 (ja) | モジュール部品とその製造方法 | |
JP2016526794A (ja) | 多層バリスタデバイスの製造方法および多層バリスタデバイス | |
CN105702432A (zh) | 电子组件以及具有该电子组件的板 | |
JP2013110372A (ja) | チップ型電子部品 | |
CN107545968A (zh) | 电阻元件及电阻元件安装基板 | |
JP5537119B2 (ja) | 蓋体並びに蓋体の製造方法および電子装置の製造方法 | |
JP2019091907A (ja) | バリスタ装置の製造方法およびバリスタ装置 | |
JP6756471B2 (ja) | 配線基板および電子装置 | |
WO2018074188A1 (ja) | インダクタ部品、インダクタ部品の製造方法 | |
JP2015141952A (ja) | 半導体パワーモジュール | |
CN113632187B (zh) | 芯片型陶瓷电子部件及其制造方法 | |
US20190131039A1 (en) | Positive temperature coefficient devices with oxygen barrier packages | |
JP2014063827A (ja) | 配線基板およびはんだバンプ付き配線基板ならびに半導体装置 | |
JP2003051421A (ja) | セラミック電子部品 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180423 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190702 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190927 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191001 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200303 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200529 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201006 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201021 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6783265 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |