JP6130393B2 - 電気的構成素子及びその製造方法 - Google Patents
電気的構成素子及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims description 151
- 239000002905 metal composite material Substances 0.000 claims description 73
- 239000011241 protective layer Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 229910010293 ceramic material Inorganic materials 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
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- 238000007598 dipping method Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 3
- 229920002994 synthetic fiber Polymers 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 239000000919 ceramic Substances 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 12
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 5
- HMHVCUVYZFYAJI-UHFFFAOYSA-N Sultiame Chemical compound C1=CC(S(=O)(=O)N)=CC=C1N1S(=O)(=O)CCCC1 HMHVCUVYZFYAJI-UHFFFAOYSA-N 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- -1 for example Substances 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 230000003078 antioxidant effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/06—Mounting, supporting or suspending transformers, reactors or choke coils not being of the signal type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/06—Mounting, supporting or suspending transformers, reactors or choke coils not being of the signal type
- H01F2027/065—Mounting on printed circuit boards
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thermistors And Varistors (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Details Of Resistors (AREA)
Description
2 基体
3 金属質接点構造
31 内部電極
32 金属化ビア
4 開口
5 不動態層
6 外部接点
7 可撓性金属複合層
8 第1保護層
9 第保護層
10,11 ドープ領域
12 はんだボール
101,102,103,104,105 ステップ
Claims (14)
- 基体(2)、前記基体(2)に直接接触する金属質接点構造(3)、及び開口(4)を設けた電気絶縁性の不動態層(5)を有する電気的構成素子(1)であって、前記金属質接点構造(3)は前記開口(4)を経て外部接点(6)に接続し、また前記外部接点(6)は可撓性金属複合層(7)により掩蔽及び包被し、前記外部接点(6)は、前記開口(4)内に少なくとも部分的に配置し、前記金属質接点構造(3)と前記外部接点(6)とは異なる構成要素であり、前記可撓性金属複合層(7)は、前記不動態層(5)の部分領域に直接接触する、電気的構成素子。
- 請求項1記載の電気的構成素子において、前記外部接点(6)は、少なくとも部分的に不動態層(5)に塗布する、電気的構成素子。
- 請求項1〜2のうちいずれか一項記載の電気的構成素子において、前記金属質接点構造(3)は前記基体(2)内に突入する、電気的構成素子。
- 請求項3記載の電気的構成素子において、前記金属質接点構造(3)は少なくとも1個の内部電極(31)を有し、又は金属化ビア(32)として構成する、電気的構成素子。
- 請求項1〜2のうちいずれか一項記載の電気的構成素子において、前記金属質接点構造(3)を前記基体(2)の外面に塗布し、また外部接点(6)は前記金属質接点構造(3)を介して前記基体(2)に電気的に接触する、電気的構成素子。
- 請求項1〜5のうちいずれか一項記載の電気的構成素子において、前記基体(2)は、セラミック材料及び/又は半導体材料を含む、電気的構成素子。
- 請求項1〜6のうちいずれか一項記載の電気的構成素子において、前記不動態層(5)は、ガラス及び/又はセラミック材料を含む、電気的構成素子。
- 請求項1〜7のうちいずれか一項記載の電気的構成素子において、前記可撓性金属複合層(7)は、合成材料、とくに、ポリマーを有する、電気的構成素子。
- 請求項1〜8のうちいずれか一項記載の電気的構成素子において、前記可撓性金属複合層(7)の前記基体(2)側とは反対側に第1保護層(8)を配置する、電気的構成素子。
- 請求項9記載の電気的構成素子において、前記第1保護層(8)上に第2保護層(9)を配置する、電気的構成素子。
- 請求項10記載の電気的構成素子において、前記第1保護層(8)はニッケルを含み、また前記第2保護層(9)は錫を含む、電気的構成素子。
- 請求項1〜11のうちいずれか一項記載の電気的構成素子を製造する方法であって、
・金属質接点構造(3)並びに電気絶縁性の不動態層(5)を設けた基体(2)を準備するステップと、
・前記外部接点(6)が前記金属質接点構造(3)に直接電気的に接触するよう、前記基体(2)上にスクリーン印刷法、スパッタ法又は浸漬プロセスによって、外部接点(6)を塗布するステップと、
・前記外部接点(6)が可撓性金属複合層(7)により掩蔽及び包被されるよう、可撓性金属複合層(7)をスクリーン印刷法又は浸漬プロセスによって塗布するステップと、
を有する、方法。 - 請求項12記載の方法において、前記外部接点(6)の塗布後、及び/又は前記可撓性金属複合層(7)の塗布後に、熱処理を行う、方法。
- 基体(2)、前記基体(2)に直接接触する金属質接点構造(3)、及び開口(4)を設けた電気絶縁性の不動態層(5)を有する電気的構成素子(1)であって、前記金属質接点構造(3)は前記開口(4)を経て外部接点(6)に接続し、また前記外部接点(6)は可撓性金属複合層(7)により掩蔽及び包被し、前記外部接点(6)は、前記開口(4)内に少なくとも部分的に配置し、前記金属質接点構造(3)と前記外部接点(6)とは異なる構成要素であり、前記金属質接点構造(3)を前記基体(2)の外面に塗布し、また外部接点(6)は前記金属質接点構造(3)を介して前記基体(2)に電気的に接触する、電気的構成素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011056515.9A DE102011056515B4 (de) | 2011-12-16 | 2011-12-16 | Elektrisches Bauelement und Verfahren zur Herstellung eines elektrischen Bauelements |
DE102011056515.9 | 2011-12-16 | ||
PCT/EP2012/069431 WO2013087243A1 (de) | 2011-12-16 | 2012-10-02 | Elektrisches bauelement und verfahren zur herstellung eines elektrischen bauelements |
Related Child Applications (1)
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JP2016028243A Division JP2016122855A (ja) | 2011-12-16 | 2016-02-17 | 電気的構成素子及びその製造方法 |
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JP2015506103A JP2015506103A (ja) | 2015-02-26 |
JP6130393B2 true JP6130393B2 (ja) | 2017-05-17 |
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JP2014546366A Active JP6130393B2 (ja) | 2011-12-16 | 2012-10-02 | 電気的構成素子及びその製造方法 |
JP2016028243A Pending JP2016122855A (ja) | 2011-12-16 | 2016-02-17 | 電気的構成素子及びその製造方法 |
JP2018082551A Active JP6783265B2 (ja) | 2011-12-16 | 2018-04-23 | 電気的構成素子及びその製造方法 |
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JP2016028243A Pending JP2016122855A (ja) | 2011-12-16 | 2016-02-17 | 電気的構成素子及びその製造方法 |
JP2018082551A Active JP6783265B2 (ja) | 2011-12-16 | 2018-04-23 | 電気的構成素子及びその製造方法 |
Country Status (5)
Country | Link |
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US (1) | US9805846B2 (ja) |
EP (1) | EP2791949B1 (ja) |
JP (3) | JP6130393B2 (ja) |
DE (1) | DE102011056515B4 (ja) |
WO (1) | WO2013087243A1 (ja) |
Families Citing this family (10)
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DE102014112678A1 (de) | 2014-09-03 | 2016-03-03 | Epcos Ag | Elektrisches Bauelement, Bauelementanordnung und Verfahren zur Herstellung eines elektrischen Bauelements sowie einer Bauelementanordnung |
KR101792381B1 (ko) * | 2016-01-04 | 2017-11-01 | 삼성전기주식회사 | 전자부품 및 그 제조방법 |
JP2019067793A (ja) * | 2017-09-28 | 2019-04-25 | Tdk株式会社 | 電子部品 |
KR102560377B1 (ko) * | 2018-04-25 | 2023-07-27 | 삼성전기주식회사 | 인덕터 |
FR3080957B1 (fr) | 2018-05-07 | 2020-07-10 | I-Ten | Electrodes mesoporeuses pour dispositifs electrochimiques en couches minces |
JP7431798B2 (ja) | 2018-07-18 | 2024-02-15 | キョーセラ・エイブイエックス・コンポーネンツ・コーポレーション | バリスタパッシベーション層及びその製造方法 |
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KR102254876B1 (ko) | 2019-06-03 | 2021-05-24 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 그 실장 기판 |
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JP5439954B2 (ja) * | 2009-06-01 | 2014-03-12 | 株式会社村田製作所 | 積層型電子部品およびその製造方法 |
KR101053329B1 (ko) * | 2009-07-09 | 2011-08-01 | 삼성전기주식회사 | 세라믹 전자부품 |
JP5324390B2 (ja) | 2009-10-22 | 2013-10-23 | Tdk株式会社 | 積層電子部品 |
JP2011228334A (ja) | 2010-04-15 | 2011-11-10 | Murata Mfg Co Ltd | セラミック電子部品 |
JP5768272B2 (ja) | 2011-02-10 | 2015-08-26 | コーア株式会社 | チップ部品およびその製造方法 |
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EP2791949B1 (de) | 2022-11-30 |
JP6783265B2 (ja) | 2020-11-11 |
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WO2013087243A1 (de) | 2013-06-20 |
JP2015506103A (ja) | 2015-02-26 |
US9805846B2 (en) | 2017-10-31 |
JP2018139308A (ja) | 2018-09-06 |
DE102011056515A1 (de) | 2013-06-20 |
EP2791949A1 (de) | 2014-10-22 |
US20140319974A1 (en) | 2014-10-30 |
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