CN1708850A - 芯片级肖特基器件 - Google Patents
芯片级肖特基器件 Download PDFInfo
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- CN1708850A CN1708850A CNA2003801026028A CN200380102602A CN1708850A CN 1708850 A CN1708850 A CN 1708850A CN A2003801026028 A CNA2003801026028 A CN A2003801026028A CN 200380102602 A CN200380102602 A CN 200380102602A CN 1708850 A CN1708850 A CN 1708850A
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- 229910000679 solder Inorganic materials 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 39
- 238000002161 passivation Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910000632 Alusil Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0605—Shape
- H01L2224/06051—Bonding areas having different shapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Abstract
Description
表面安装 | 倒装芯片 | |||
零件号 | 10MQ040N | 20BQO3O | A | B |
(SMA) | (SMB) | |||
尺寸 | ||||
垂直剖面 | 2.4mm | 2.4mm | 0.8mm | 0.8mm |
封装面积 | 13.3mm2 | 17.9mm2 | 2.3mm2 | 3.6mm2 |
181mil×114mil | 185mil×150mil | 60mil×60mil | 75mil×75mil | |
管芯尺寸 | 36mil×36mil | 50mil×50mil | 60mil×60mil | 75mil×75mil |
阳极面积 | 0.472mm2 | 1.061mm2 | 1.069mm2 | 3.240mm2 |
正向电压 | ||||
1A的VF(V) | 0.54 | 0.41(0.44) | 0.35(0.38) | |
2A的VF(V) | 0.47 | 0.47(0.50) | 0.40(0.43) | |
漏电流 | ||||
最大IRM(μA) | 13 | 29 | 6(29) | 19(89) |
管芯 每个设计类型的失效能量[mJ]# | ||||
46 | 48 | 50 | 10 | |
1 | 40,5 | x | x | 45,1 |
2 | 40,5 | 36,1 | 32,0 | 45,1 |
3 | 40,5 | x | 32,0 | 40,5 |
4 | 40,5 | 40,5 | 36,1 | 45,1 |
5 | 36,1 | 36,1 | 32,0 | x |
6 | 40,5 | 32,0 | 36,1 | 50,0 |
7 | 40,5 | 40,5 | 36,1 | 45,1 |
8 | 36,1 | 32,0 | 32,0 | 50,0 |
9 | 40,5 | 24,5 | 36,1 | 50,0 |
10 | 40,5 | 40,5 | 36,1 | 50,0 |
平均 | 39,6 | 35,3 | 34,4 | 46,8 |
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/289,486 US7129558B2 (en) | 2002-11-06 | 2002-11-06 | Chip-scale schottky device |
US10/289,486 | 2002-11-06 | ||
PCT/US2003/035426 WO2004044984A2 (en) | 2002-11-06 | 2003-11-04 | Chip-scale schottky device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1708850A true CN1708850A (zh) | 2005-12-14 |
CN100380679C CN100380679C (zh) | 2008-04-09 |
Family
ID=32176074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801026028A Expired - Lifetime CN100380679C (zh) | 2002-11-06 | 2003-11-04 | 芯片级肖特基器件 |
Country Status (9)
Country | Link |
---|---|
US (2) | US7129558B2 (zh) |
EP (1) | EP1561242A4 (zh) |
JP (1) | JP2006505955A (zh) |
KR (1) | KR100750696B1 (zh) |
CN (1) | CN100380679C (zh) |
AU (1) | AU2003291341A1 (zh) |
HK (1) | HK1084507A1 (zh) |
TW (1) | TWI241024B (zh) |
WO (1) | WO2004044984A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105655412A (zh) * | 2016-03-30 | 2016-06-08 | 南通明芯微电子有限公司 | 一种肖特基二极管 |
CN105938849A (zh) * | 2016-02-03 | 2016-09-14 | 杭州立昂微电子股份有限公司 | 一种用于芯片级封装的肖特基芯片的制造方法 |
CN105938848A (zh) * | 2016-02-03 | 2016-09-14 | 杭州立昂微电子股份有限公司 | 一种用于芯片级封装的肖特基芯片 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7129558B2 (en) * | 2002-11-06 | 2006-10-31 | International Rectifier Corporation | Chip-scale schottky device |
FR2857506A1 (fr) * | 2003-07-11 | 2005-01-14 | St Microelectronics Sa | Diode de redressement et de protection |
JP4469584B2 (ja) * | 2003-09-12 | 2010-05-26 | 株式会社東芝 | 半導体装置 |
JP2006024829A (ja) * | 2004-07-09 | 2006-01-26 | Toshiba Corp | 半導体装置及びその製造方法 |
US7821133B2 (en) * | 2005-10-28 | 2010-10-26 | International Rectifier Corporation | Contact pad structure for flip chip semiconductor die |
KR100672766B1 (ko) * | 2005-12-27 | 2007-01-22 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
DE102006033319B4 (de) * | 2006-07-17 | 2010-09-30 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements in Halbleiterchipgröße mit einem Halbleiterchip |
US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
KR100780967B1 (ko) * | 2006-12-07 | 2007-12-03 | 삼성전자주식회사 | 고전압용 쇼트키 다이오드 구조체 |
US8710665B2 (en) | 2008-10-06 | 2014-04-29 | Infineon Technologies Ag | Electronic component, a semiconductor wafer and a method for producing an electronic component |
CN203242609U (zh) * | 2010-06-02 | 2013-10-16 | 株式会社村田制作所 | Esd保护装置 |
US8164154B1 (en) | 2010-12-17 | 2012-04-24 | Aram Tanielian | Low profile Schottky barrier diode for solar cells and solar panels and method of fabrication thereof |
DE102011056515B4 (de) * | 2011-12-16 | 2023-12-07 | Tdk Electronics Ag | Elektrisches Bauelement und Verfahren zur Herstellung eines elektrischen Bauelements |
US8791551B2 (en) * | 2012-03-13 | 2014-07-29 | Formosa Microsemi Co., Ltd. | Well-through type diode element/component and manufacturing method for them |
JP6787908B2 (ja) * | 2015-02-20 | 2020-11-18 | ヴィシェイ ジェネラル セミコンダクター,エルエルシーVishay General Semiconductor,Llc | 大きな結合パッド及び低下した接触抵抗を有するGaNベースのショットキーダイオード |
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US4899199A (en) * | 1983-09-30 | 1990-02-06 | International Rectifier Corporation | Schottky diode with titanium or like layer contacting the dielectric layer |
JPS60166164A (ja) | 1984-02-07 | 1985-08-29 | Sumitomo Light Metal Ind Ltd | 板状熱交換器の製造方法 |
JPS60166164U (ja) * | 1984-04-10 | 1985-11-05 | 三洋電機株式会社 | シヨツトキバリヤダイオ−ド |
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JPS62229974A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | シヨツトキ−ダイオ−ド及びその製造方法 |
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JPH03203265A (ja) * | 1989-12-28 | 1991-09-04 | Sony Corp | 半導体装置 |
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US5859465A (en) * | 1996-10-15 | 1999-01-12 | International Rectifier Corporation | High voltage power schottky with aluminum barrier metal spaced from first diffused ring |
JPH10284741A (ja) * | 1997-03-31 | 1998-10-23 | Toko Inc | ダイオード装置 |
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CN1301046A (zh) * | 1999-12-17 | 2001-06-27 | 艾伦·Y·谭 | 肖特基二极管、整流器及其制造方法 |
JP2001196606A (ja) * | 2000-01-11 | 2001-07-19 | Mitsubishi Electric Corp | ダイオード |
AU2001238081A1 (en) * | 2000-02-10 | 2001-08-20 | International Rectifier Corporation | Vertical conduction flip-chip device with bump contacts on single surface |
US6682968B2 (en) * | 2000-07-27 | 2004-01-27 | Sanyo Electric Co., Ltd. | Manufacturing method of Schottky barrier diode |
US6657273B2 (en) * | 2001-06-12 | 2003-12-02 | International Rectifirer Corporation | Termination for high voltage schottky diode |
TW498471B (en) | 2001-07-13 | 2002-08-11 | Taiwan Semiconductor Mfg | Manufacturing method for solder bump |
US7129558B2 (en) * | 2002-11-06 | 2006-10-31 | International Rectifier Corporation | Chip-scale schottky device |
-
2002
- 2002-11-06 US US10/289,486 patent/US7129558B2/en not_active Expired - Lifetime
-
2003
- 2003-11-04 AU AU2003291341A patent/AU2003291341A1/en not_active Abandoned
- 2003-11-04 WO PCT/US2003/035426 patent/WO2004044984A2/en active Application Filing
- 2003-11-04 EP EP03768734A patent/EP1561242A4/en not_active Withdrawn
- 2003-11-04 JP JP2004551825A patent/JP2006505955A/ja active Pending
- 2003-11-04 CN CNB2003801026028A patent/CN100380679C/zh not_active Expired - Lifetime
- 2003-11-04 KR KR1020057007637A patent/KR100750696B1/ko active IP Right Grant
- 2003-11-05 TW TW092130929A patent/TWI241024B/zh not_active IP Right Cessation
-
2006
- 2006-06-12 HK HK06106722A patent/HK1084507A1/xx not_active IP Right Cessation
- 2006-10-18 US US11/582,755 patent/US8921969B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105938849A (zh) * | 2016-02-03 | 2016-09-14 | 杭州立昂微电子股份有限公司 | 一种用于芯片级封装的肖特基芯片的制造方法 |
CN105938848A (zh) * | 2016-02-03 | 2016-09-14 | 杭州立昂微电子股份有限公司 | 一种用于芯片级封装的肖特基芯片 |
CN105655412A (zh) * | 2016-03-30 | 2016-06-08 | 南通明芯微电子有限公司 | 一种肖特基二极管 |
Also Published As
Publication number | Publication date |
---|---|
KR20050083881A (ko) | 2005-08-26 |
EP1561242A2 (en) | 2005-08-10 |
AU2003291341A1 (en) | 2004-06-03 |
WO2004044984A2 (en) | 2004-05-27 |
WO2004044984A3 (en) | 2004-07-15 |
KR100750696B1 (ko) | 2007-08-22 |
TWI241024B (en) | 2005-10-01 |
CN100380679C (zh) | 2008-04-09 |
EP1561242A4 (en) | 2007-08-01 |
US7129558B2 (en) | 2006-10-31 |
US20040084770A1 (en) | 2004-05-06 |
US20070034984A1 (en) | 2007-02-15 |
JP2006505955A (ja) | 2006-02-16 |
TW200409355A (en) | 2004-06-01 |
US8921969B2 (en) | 2014-12-30 |
HK1084507A1 (en) | 2006-07-28 |
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