JP6787908B2 - 大きな結合パッド及び低下した接触抵抗を有するGaNベースのショットキーダイオード - Google Patents
大きな結合パッド及び低下した接触抵抗を有するGaNベースのショットキーダイオード Download PDFInfo
- Publication number
- JP6787908B2 JP6787908B2 JP2017543957A JP2017543957A JP6787908B2 JP 6787908 B2 JP6787908 B2 JP 6787908B2 JP 2017543957 A JP2017543957 A JP 2017543957A JP 2017543957 A JP2017543957 A JP 2017543957A JP 6787908 B2 JP6787908 B2 JP 6787908B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- active layer
- pad
- series
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008878 coupling Effects 0.000 title description 10
- 238000010168 coupling process Methods 0.000 title description 10
- 238000005859 coupling reaction Methods 0.000 title description 10
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 29
- 229910002601 GaN Inorganic materials 0.000 description 28
- 239000000969 carrier Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- -1 gallium nitride (GaN) compound Chemical class 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000001668 ameliorated effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
20 バッファ層
30 GaN層
40 AlGaN層
60 アノード
70 カソード
100 ダイオード
122 アノード電極
124 カソード電極
126 誘電体
130 アノードパッド
140 カソードパッド
222 インターデジタル部分
224 インターデジタル部分
230 アノードパッド
240 カソードパッド
300 ダイオード
330 GaN層
340 AlGaN層
360 アノード
370 カソード
510 アノードパッド
520 カソードパッド
550 アノード電極フィンガー
555 アノード電極フィンガー
560 カソード電極フィンガー
610 基板
615 第1の活性層
620 第2の活性層
625 電極
630 電極
640 アノードパッド
645 誘電体層
650 カソードパッド
800 デバイス
810 ショットキー電極
820 アノードパッド
Claims (11)
- 基板;
前記基板上に配される第1の活性層;
前記第1の活性層上に配される第2の活性層であって、前記第1の活性層と前記第2の活性層との間に2次元電子ガス層が生じるように、前記第1の活性層より大きいバンドギャップを有する、第2の活性層;
前記第2の活性層との間にショットキー接合を作る第1の電極であって、第1の電極パッドと、前記第1の電極パッドに電気的に接触する第1の一連の電極フィンガーと、を含む、第1の電極;及び
前記第1の活性層との間にオーミック接合を作る第2の電極であって、第2の電極パッドと、前記第2の電極パッドに電気的に接触する第2の一連の電極フィンガーと、を含み、前記第1及び第2の一連の電極フィンガーが、インターデジタルパターンを形成し、前記第1の電極パッドが、前記第1及び第2の一連の電極フィンガー上に位置し、前記第2の電極パッドが、前記第1の電極パッドによって囲われる、第2の電極;
を備える、半導体デバイス。 - 前記第1の電極パッドと前記第2の一連の電極フィンガーとの間に位置する誘電体層をさらに備える、請求項1に記載の半導体デバイス。
- 前記第2の電極パッドが、前記第2の一連の電極フィンガーの遠端上に接触して位置する、請求項1に記載の半導体デバイス。
- 前記第1及び第2の一連の電極フィンガーが各々、互いに離隔する第1及び第2の電極部分を含み、
前記第1及び第2の一連の電極フィンガーの前記第1の電極部分が、第1のインターデジタルパターンを形成し、
前記第1及び第2の一連の電極フィンガーの前記第2の電極部分が、前記第1のインターデジタルパターンから空間的に離れた第2のインターデジタルパターンを形成する、請求項1に記載の半導体デバイス。 - 前記第1の活性層が、III族窒化物半導体材料を含む、請求項1に記載の半導体デバイス。
- 前記第1の活性層が、GaNを含む、請求項5に記載の半導体デバイス。
- 前記第2の活性層が、III族窒化物半導体材料を含む、請求項1に記載の半導体デバイス。
- 前記第2の活性層が、AlXGa1−XNを含み、0<X<1である、請求項7に記載の半導体デバイス。
- 前記第2の活性層が、AlGaN、AlInN及びAlInGaNからなる群から選択される、請求項8に記載の半導体デバイス。
- 前記第1の一連の電極フィンガーにおける少なくとも1つのフィンガーが、全固体状の長方形状である、請求項1に記載の半導体デバイス。
- 前記第1の一連の電極フィンガーの各々が、環状六角形状である、請求項1に記載の半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/627,013 US9281417B1 (en) | 2015-02-20 | 2015-02-20 | GaN-based schottky diode having large bond pads and reduced contact resistance |
PCT/US2015/016752 WO2016133527A1 (en) | 2015-02-20 | 2015-02-20 | Gan-based schottky diode having large bond pads and reduced contact resistance |
US14/627,013 | 2015-02-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018511933A JP2018511933A (ja) | 2018-04-26 |
JP6787908B2 true JP6787908B2 (ja) | 2020-11-18 |
Family
ID=55410528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017543957A Active JP6787908B2 (ja) | 2015-02-20 | 2015-02-20 | 大きな結合パッド及び低下した接触抵抗を有するGaNベースのショットキーダイオード |
Country Status (7)
Country | Link |
---|---|
US (1) | US9281417B1 (ja) |
EP (1) | EP3259781B1 (ja) |
JP (1) | JP6787908B2 (ja) |
KR (1) | KR102008326B1 (ja) |
CN (1) | CN107534060B (ja) |
TW (1) | TWI559405B (ja) |
WO (1) | WO2016133527A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10985284B2 (en) | 2016-04-15 | 2021-04-20 | Macom Technology Solutions Holdings, Inc. | High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current |
US20170301780A1 (en) | 2016-04-15 | 2017-10-19 | Macom Technology Solutions Holdings, Inc. | High-voltage gan high electron mobility transistors with reduced leakage current |
US11233047B2 (en) | 2018-01-19 | 2022-01-25 | Macom Technology Solutions Holdings, Inc. | Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon |
US10950598B2 (en) | 2018-01-19 | 2021-03-16 | Macom Technology Solutions Holdings, Inc. | Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor |
US11056483B2 (en) | 2018-01-19 | 2021-07-06 | Macom Technology Solutions Holdings, Inc. | Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor |
KR102123592B1 (ko) * | 2018-10-11 | 2020-06-16 | 국방과학연구소 | Hemt 소자 및 이의 제조 방법 |
CN109346406A (zh) * | 2018-11-23 | 2019-02-15 | 江苏新广联半导体有限公司 | 一种并联结构的氮化镓sbd的制作方法 |
CN111009467B (zh) * | 2019-12-06 | 2021-06-08 | 华南理工大学 | 一种基于Cu衬底基GaN整流器及其制备方法 |
US11600614B2 (en) | 2020-03-26 | 2023-03-07 | Macom Technology Solutions Holdings, Inc. | Microwave integrated circuits including gallium-nitride devices on silicon |
CN111477690B (zh) * | 2020-04-02 | 2021-05-07 | 西安电子科技大学 | 基于P-GaN帽层和叉指结构的横向肖特基二极管及其制备方法 |
CN111477678B (zh) * | 2020-04-02 | 2021-07-09 | 西安电子科技大学 | 一种基于叉指结构的横向肖特基二极管及其制备方法 |
WO2021212368A1 (zh) * | 2020-04-22 | 2021-10-28 | 英诺赛科(珠海)科技有限公司 | 具有多通道异质结构的半导体器件及其制造方法 |
US11984496B2 (en) | 2020-04-22 | 2024-05-14 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device with multichannel heterostructure and manufacturing method thereof |
US11955567B2 (en) | 2022-02-16 | 2024-04-09 | Leap Semiconductor Corp. | Wide-band gap semiconductor device and method of manufacturing the same |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5767546A (en) * | 1994-12-30 | 1998-06-16 | Siliconix Incorporated | Laternal power mosfet having metal strap layer to reduce distributed resistance |
JP2637937B2 (ja) * | 1995-01-30 | 1997-08-06 | 関西日本電気株式会社 | 電界効果トランジスタの製造方法 |
JP3379376B2 (ja) * | 1997-03-14 | 2003-02-24 | 松下電器産業株式会社 | 電界効果トランジスタおよびそれを用いた電力増幅器 |
US6784430B2 (en) * | 1999-02-08 | 2004-08-31 | General Electric Company | Interdigitated flame sensor, system and method |
US6630715B2 (en) * | 2001-10-01 | 2003-10-07 | International Business Machines Corporation | Asymmetrical MOSFET layout for high currents and high speed operation |
JP2003168736A (ja) * | 2001-11-30 | 2003-06-13 | Hitachi Ltd | 半導体素子及び高周波電力増幅装置並びに無線通信機 |
US7129558B2 (en) * | 2002-11-06 | 2006-10-31 | International Rectifier Corporation | Chip-scale schottky device |
US7145071B2 (en) * | 2002-12-11 | 2006-12-05 | General Electric Company | Dye sensitized solar cell having finger electrodes |
JP4155888B2 (ja) * | 2003-07-09 | 2008-09-24 | シャープ株式会社 | 環状型ゲート電極を備えたトランジスタ |
US7166867B2 (en) * | 2003-12-05 | 2007-01-23 | International Rectifier Corporation | III-nitride device with improved layout geometry |
US8174048B2 (en) * | 2004-01-23 | 2012-05-08 | International Rectifier Corporation | III-nitride current control device and method of manufacture |
JP5362187B2 (ja) * | 2006-03-30 | 2013-12-11 | 日本碍子株式会社 | 半導体素子 |
JP5300238B2 (ja) * | 2006-12-19 | 2013-09-25 | パナソニック株式会社 | 窒化物半導体装置 |
WO2008155086A1 (de) | 2007-06-18 | 2008-12-24 | Microgan Gmbh | Halbleiterbauelement mit ringförmig geschlossener kontaktierung |
JP5608322B2 (ja) * | 2008-10-21 | 2014-10-15 | パナソニック株式会社 | 双方向スイッチ |
KR101058725B1 (ko) * | 2009-08-28 | 2011-08-22 | 삼성전기주식회사 | 반도체 소자 및 그 제조 방법 |
JP5457292B2 (ja) * | 2010-07-12 | 2014-04-02 | パナソニック株式会社 | 窒化物半導体装置 |
KR20130008279A (ko) * | 2011-07-12 | 2013-01-22 | 삼성전자주식회사 | 파워 반도체 소자 |
US8772901B2 (en) * | 2011-11-11 | 2014-07-08 | Alpha And Omega Semiconductor Incorporated | Termination structure for gallium nitride schottky diode |
JP6202514B2 (ja) * | 2012-10-31 | 2017-09-27 | ローム株式会社 | 窒化物半導体ショットキバリアダイオード |
-
2015
- 2015-02-20 EP EP15882854.1A patent/EP3259781B1/en active Active
- 2015-02-20 JP JP2017543957A patent/JP6787908B2/ja active Active
- 2015-02-20 WO PCT/US2015/016752 patent/WO2016133527A1/en active Application Filing
- 2015-02-20 CN CN201580076664.9A patent/CN107534060B/zh active Active
- 2015-02-20 KR KR1020177026414A patent/KR102008326B1/ko active IP Right Grant
- 2015-02-20 US US14/627,013 patent/US9281417B1/en active Active
- 2015-04-13 TW TW104111786A patent/TWI559405B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201631666A (zh) | 2016-09-01 |
CN107534060A (zh) | 2018-01-02 |
KR20170117588A (ko) | 2017-10-23 |
CN107534060B (zh) | 2020-12-22 |
EP3259781A4 (en) | 2018-10-31 |
JP2018511933A (ja) | 2018-04-26 |
EP3259781A1 (en) | 2017-12-27 |
EP3259781B1 (en) | 2021-08-25 |
KR102008326B1 (ko) | 2019-08-07 |
US9281417B1 (en) | 2016-03-08 |
TWI559405B (zh) | 2016-11-21 |
WO2016133527A1 (en) | 2016-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6787908B2 (ja) | 大きな結合パッド及び低下した接触抵抗を有するGaNベースのショットキーダイオード | |
US10333006B2 (en) | Termination structure for gallium nitride Schottky diode including junction barriar diodes | |
CN104051520B (zh) | 高电子迁移率的半导体器件及其方法 | |
US8013414B2 (en) | Gallium nitride semiconductor device with improved forward conduction | |
JP5457046B2 (ja) | 半導体装置 | |
JP5150803B2 (ja) | 複数のメサを有するラテラル導電型ショットキーダイオード | |
US20070210329A1 (en) | Warp-free semiconductor wafer, and devices using the same | |
US20120074424A1 (en) | Gallium nitride based semiconductor devices and methods of manufacturing the same | |
JP5645304B2 (ja) | ダイオード | |
KR102011761B1 (ko) | 이중 금속의 부분 리세스된 전극을 갖는 GaN계 쇼트키 다이오드 | |
JP2012195618A (ja) | 窒化ガリウム半導体素子 | |
JP2007305954A (ja) | 電界効果トランジスタ及びその装置 | |
KR102011762B1 (ko) | 부분 리세스된 양극을 갖는 GaN계 쇼트키 다이오드 | |
WO2006098341A1 (ja) | 電界効果トランジスタ及びその装置 | |
JP2013080895A (ja) | 窒化物半導体素子及びその製造方法 | |
US20150123139A1 (en) | High electron mobility transistor and method of manufacturing the same | |
JP2011124258A (ja) | 窒化物系ダイオード | |
US20110006307A1 (en) | Group III-Nitride Semiconductor Schottky Diode and Its Fabrication Method | |
CN110707153A (zh) | 半导体装置 | |
US10290597B2 (en) | Semiconductor device | |
KR102137749B1 (ko) | 전력 반도체 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180126 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190304 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190604 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190619 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190902 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20191202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200316 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200616 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200916 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201005 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201029 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6787908 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |