JP2006344943A - トレンチ分離領域を有するｍｏｓ電界効果トランジスタ及びその製造方法 - Google Patents

トレンチ分離領域を有するｍｏｓ電界効果トランジスタ及びその製造方法 Download PDF

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Publication number
JP2006344943A
JP2006344943A JP2006143089A JP2006143089A JP2006344943A JP 2006344943 A JP2006344943 A JP 2006344943A JP 2006143089 A JP2006143089 A JP 2006143089A JP 2006143089 A JP2006143089 A JP 2006143089A JP 2006344943 A JP2006344943 A JP 2006344943A
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JP
Japan
Prior art keywords
region
insulating film
trench isolation
isolation region
effect transistor
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Pending
Application number
JP2006143089A
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English (en)
Japanese (ja)
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JP2006344943A5 (enExample
Inventor
Myoung-Soo Kim
明 壽 金
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006344943A publication Critical patent/JP2006344943A/ja
Publication of JP2006344943A5 publication Critical patent/JP2006344943A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
JP2006143089A 2005-06-09 2006-05-23 トレンチ分離領域を有するｍｏｓ電界効果トランジスタ及びその製造方法 Pending JP2006344943A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050049251A KR100699843B1 (ko) 2005-06-09 2005-06-09 트렌치 분리영역을 갖는 모스 전계효과 트랜지스터 및 그제조방법

Publications (2)

Publication Number Publication Date
JP2006344943A true JP2006344943A (ja) 2006-12-21
JP2006344943A5 JP2006344943A5 (enExample) 2009-06-25

Family

ID=37510223

Family Applications (1)

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JP2006143089A Pending JP2006344943A (ja) 2005-06-09 2006-05-23 トレンチ分離領域を有するｍｏｓ電界効果トランジスタ及びその製造方法

Country Status (4)

Country Link
US (2) US20060278951A1 (enExample)
JP (1) JP2006344943A (enExample)
KR (1) KR100699843B1 (enExample)
CN (1) CN1877858B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012500485A (ja) * 2008-08-19 2012-01-05 インターナショナル・ビジネス・マシーンズ・コーポレーション デュアル金属ゲートのコーナー部
CN102916038A (zh) * 2011-08-04 2013-02-06 北大方正集团有限公司 一种场效应晶体管及其制造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5298432B2 (ja) * 2007-01-31 2013-09-25 富士電機株式会社 半導体装置およびその製造方法
JP2009141278A (ja) * 2007-12-10 2009-06-25 Toshiba Corp 不揮発性半導体記憶装置
US8174071B2 (en) * 2008-05-02 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage LDMOS transistor
KR101543330B1 (ko) * 2009-08-05 2015-08-11 삼성전자주식회사 반도체 소자의 제조 방법
KR20130081505A (ko) * 2012-01-09 2013-07-17 삼성전자주식회사 반도체 장치, 반도체 시스템, 상기 반도체 장치의 제조 방법
US8921188B2 (en) * 2013-02-07 2014-12-30 Globalfoundries Inc. Methods of forming a transistor device on a bulk substrate and the resulting device
KR102552949B1 (ko) * 2016-09-02 2023-07-06 삼성전자주식회사 반도체 장치
US10833206B2 (en) * 2018-12-11 2020-11-10 Micron Technology, Inc. Microelectronic devices including capacitor structures and methods of forming microelectronic devices
CN112071758B (zh) * 2019-06-11 2025-01-24 芯恩（青岛）集成电路有限公司 填埋式三维金属-氧化物场效应晶体管及制备方法
CN110707090B (zh) * 2019-09-30 2022-09-20 长江存储科技有限责任公司 一种位线驱动器
CN112151616B (zh) * 2020-08-20 2022-12-16 中国科学院微电子研究所 一种堆叠mos器件及其制备方法
CN115312590A (zh) * 2022-09-02 2022-11-08 杭州富芯半导体有限公司 半导体制备方法和半导体结构

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846201A (ja) * 1994-07-25 1996-02-16 Hyundai Electron Ind Co Ltd 半導体素子及びその製造方法
JPH11154747A (ja) * 1997-11-21 1999-06-08 Nec Corp 半導体装置及びその製造方法
JP2000269484A (ja) * 1998-06-22 2000-09-29 Internatl Business Mach Corp <Ibm> 電界効果トランジスタ
JP2001068563A (ja) * 1999-07-21 2001-03-16 Motorola Inc 半導体装置の形成方法
JP2001160589A (ja) * 1999-10-12 2001-06-12 Samsung Electronics Co Ltd トレンチ素子分離構造とこれを有する半導体素子及びトレンチ素子分離方法
JP2002222942A (ja) * 2001-01-25 2002-08-09 Nec Corp 半導体装置およびその製造方法
JP2004336052A (ja) * 2003-05-02 2004-11-25 Samsung Electronics Co Ltd 半導体素子及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3397817B2 (ja) * 1992-12-11 2003-04-21 シチズン時計株式会社 半導体不揮発性記憶素子の製造方法
KR100298874B1 (ko) * 1997-12-16 2001-11-22 김영환 트랜지스터의형성방법
EP1139419A1 (en) * 2000-03-29 2001-10-04 STMicroelectronics S.r.l. Method of manufacturing an electrically programmable, non-volatile memory with logic circuitry
KR20020073984A (ko) * 2001-03-19 2002-09-28 삼성전자 주식회사 게이트 전극 형성 방법 및 그 방법에 따라 형성된 게이트전극 구조
US20020197823A1 (en) * 2001-05-18 2002-12-26 Yoo Jae-Yoon Isolation method for semiconductor device
JP2003133549A (ja) 2001-10-29 2003-05-09 Nec Corp Ｍｏｓｆｅｔ及びその製造方法
CN1479350A (zh) * 2002-08-27 2004-03-03 上海宏力半导体制造有限公司 形成不同厚度的双栅极绝缘层的方法
KR20050010152A (ko) * 2003-07-18 2005-01-27 주식회사 하이닉스반도체 반도체 소자의 저전압 트랜지스터 및 그 제조방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846201A (ja) * 1994-07-25 1996-02-16 Hyundai Electron Ind Co Ltd 半導体素子及びその製造方法
JPH11154747A (ja) * 1997-11-21 1999-06-08 Nec Corp 半導体装置及びその製造方法
JP2000269484A (ja) * 1998-06-22 2000-09-29 Internatl Business Mach Corp <Ibm> 電界効果トランジスタ
JP2001068563A (ja) * 1999-07-21 2001-03-16 Motorola Inc 半導体装置の形成方法
JP2001160589A (ja) * 1999-10-12 2001-06-12 Samsung Electronics Co Ltd トレンチ素子分離構造とこれを有する半導体素子及びトレンチ素子分離方法
JP2002222942A (ja) * 2001-01-25 2002-08-09 Nec Corp 半導体装置およびその製造方法
JP2004336052A (ja) * 2003-05-02 2004-11-25 Samsung Electronics Co Ltd 半導体素子及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012500485A (ja) * 2008-08-19 2012-01-05 インターナショナル・ビジネス・マシーンズ・コーポレーション デュアル金属ゲートのコーナー部
CN102916038A (zh) * 2011-08-04 2013-02-06 北大方正集团有限公司 一种场效应晶体管及其制造方法
CN102916038B (zh) * 2011-08-04 2015-12-16 北大方正集团有限公司 一种场效应晶体管及其制造方法

Also Published As

Publication number Publication date
US20090269898A1 (en) 2009-10-29
CN1877858A (zh) 2006-12-13
US20060278951A1 (en) 2006-12-14
KR100699843B1 (ko) 2007-03-27
KR20060130917A (ko) 2006-12-20
CN1877858B (zh) 2010-09-29
US8416599B2 (en) 2013-04-09

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