CN1877858B - 金属氧化物半导体场效应晶体管及其制造方法 - Google Patents

金属氧化物半导体场效应晶体管及其制造方法 Download PDF

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Publication number
CN1877858B
CN1877858B CN2006100842908A CN200610084290A CN1877858B CN 1877858 B CN1877858 B CN 1877858B CN 2006100842908 A CN2006100842908 A CN 2006100842908A CN 200610084290 A CN200610084290 A CN 200610084290A CN 1877858 B CN1877858 B CN 1877858B
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China
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region
insulating layer
field effect
effect transistor
gate electrode
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CN2006100842908A
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Chinese (zh)
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CN1877858A (zh
Inventor
金明寿
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
CN2006100842908A 2005-06-09 2006-05-30 金属氧化物半导体场效应晶体管及其制造方法 Active CN1877858B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR49251/05 2005-06-09
KR1020050049251A KR100699843B1 (ko) 2005-06-09 2005-06-09 트렌치 분리영역을 갖는 모스 전계효과 트랜지스터 및 그제조방법

Publications (2)

Publication Number Publication Date
CN1877858A CN1877858A (zh) 2006-12-13
CN1877858B true CN1877858B (zh) 2010-09-29

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US (2) US20060278951A1 (enExample)
JP (1) JP2006344943A (enExample)
KR (1) KR100699843B1 (enExample)
CN (1) CN1877858B (enExample)

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JP5298432B2 (ja) * 2007-01-31 2013-09-25 富士電機株式会社 半導体装置およびその製造方法
JP2009141278A (ja) * 2007-12-10 2009-06-25 Toshiba Corp 不揮発性半導体記憶装置
US8174071B2 (en) * 2008-05-02 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage LDMOS transistor
US8237233B2 (en) * 2008-08-19 2012-08-07 International Business Machines Corporation Field effect transistor having a gate structure with a first section above a center portion of the channel region and having a first effective work function and second sections above edges of the channel region and having a second effective work function
KR101543330B1 (ko) * 2009-08-05 2015-08-11 삼성전자주식회사 반도체 소자의 제조 방법
CN102916038B (zh) * 2011-08-04 2015-12-16 北大方正集团有限公司 一种场效应晶体管及其制造方法
KR20130081505A (ko) * 2012-01-09 2013-07-17 삼성전자주식회사 반도체 장치, 반도체 시스템, 상기 반도체 장치의 제조 방법
US8921188B2 (en) * 2013-02-07 2014-12-30 Globalfoundries Inc. Methods of forming a transistor device on a bulk substrate and the resulting device
KR102552949B1 (ko) * 2016-09-02 2023-07-06 삼성전자주식회사 반도체 장치
US10833206B2 (en) * 2018-12-11 2020-11-10 Micron Technology, Inc. Microelectronic devices including capacitor structures and methods of forming microelectronic devices
CN112071758B (zh) * 2019-06-11 2025-01-24 芯恩（青岛）集成电路有限公司 填埋式三维金属-氧化物场效应晶体管及制备方法
CN110707090B (zh) * 2019-09-30 2022-09-20 长江存储科技有限责任公司 一种位线驱动器
CN112151616B (zh) * 2020-08-20 2022-12-16 中国科学院微电子研究所 一种堆叠mos器件及其制备方法
CN115312590A (zh) * 2022-09-02 2022-11-08 杭州富芯半导体有限公司 半导体制备方法和半导体结构

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US6627928B2 (en) * 2000-03-29 2003-09-30 Stmicroelectronics S.R.L. Method of manufacturing an integrated circuit, for integrating an electrically programmable, non-volatile memory and high-performance logic circuitry in the same semiconductor chip
CN1479350A (zh) * 2002-08-27 2004-03-03 上海宏力半导体制造有限公司 形成不同厚度的双栅极绝缘层的方法

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JP3397817B2 (ja) * 1992-12-11 2003-04-21 シチズン時計株式会社 半導体不揮発性記憶素子の製造方法
KR960006004A (ko) * 1994-07-25 1996-02-23 김주용 반도체 소자 및 그 제조방법
JP3050301B2 (ja) * 1997-11-21 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
KR100298874B1 (ko) * 1997-12-16 2001-11-22 김영환 트랜지스터의형성방법
US6097069A (en) * 1998-06-22 2000-08-01 International Business Machines Corporation Method and structure for increasing the threshold voltage of a corner device
US6171910B1 (en) * 1999-07-21 2001-01-09 Motorola Inc. Method for forming a semiconductor device
KR100338767B1 (ko) * 1999-10-12 2002-05-30 윤종용 트렌치 소자분리 구조와 이를 갖는 반도체 소자 및 트렌치 소자분리 방법
JP2002222942A (ja) * 2001-01-25 2002-08-09 Nec Corp 半導体装置およびその製造方法
KR20020073984A (ko) * 2001-03-19 2002-09-28 삼성전자 주식회사 게이트 전극 형성 방법 및 그 방법에 따라 형성된 게이트전극 구조
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KR20050010152A (ko) * 2003-07-18 2005-01-27 주식회사 하이닉스반도체 반도체 소자의 저전압 트랜지스터 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
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US6627928B2 (en) * 2000-03-29 2003-09-30 Stmicroelectronics S.R.L. Method of manufacturing an integrated circuit, for integrating an electrically programmable, non-volatile memory and high-performance logic circuitry in the same semiconductor chip
CN1479350A (zh) * 2002-08-27 2004-03-03 上海宏力半导体制造有限公司 形成不同厚度的双栅极绝缘层的方法

Also Published As

Publication number Publication date
US20090269898A1 (en) 2009-10-29
CN1877858A (zh) 2006-12-13
US20060278951A1 (en) 2006-12-14
JP2006344943A (ja) 2006-12-21
KR100699843B1 (ko) 2007-03-27
KR20060130917A (ko) 2006-12-20
US8416599B2 (en) 2013-04-09

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