KR100699843B1 - 트렌치 분리영역을 갖는 모스 전계효과 트랜지스터 및 그제조방법 - Google Patents

트렌치 분리영역을 갖는 모스 전계효과 트랜지스터 및 그제조방법 Download PDF

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KR100699843B1
KR100699843B1 KR1020050049251A KR20050049251A KR100699843B1 KR 100699843 B1 KR100699843 B1 KR 100699843B1 KR 1020050049251 A KR1020050049251 A KR 1020050049251A KR 20050049251 A KR20050049251 A KR 20050049251A KR 100699843 B1 KR100699843 B1 KR 100699843B1
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South Korea
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region
trench isolation
insulating film
isolation region
film
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KR1020050049251A
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Korean (ko)
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KR20060130917A (ko
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김명수
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삼성전자주식회사
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Priority to KR1020050049251A priority Critical patent/KR100699843B1/ko
Priority to US11/416,736 priority patent/US20060278951A1/en
Priority to JP2006143089A priority patent/JP2006344943A/ja
Priority to CN2006100842908A priority patent/CN1877858B/zh
Publication of KR20060130917A publication Critical patent/KR20060130917A/ko
Application granted granted Critical
Publication of KR100699843B1 publication Critical patent/KR100699843B1/ko
Priority to US12/498,652 priority patent/US8416599B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
KR1020050049251A 2005-06-09 2005-06-09 트렌치 분리영역을 갖는 모스 전계효과 트랜지스터 및 그제조방법 Expired - Lifetime KR100699843B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020050049251A KR100699843B1 (ko) 2005-06-09 2005-06-09 트렌치 분리영역을 갖는 모스 전계효과 트랜지스터 및 그제조방법
US11/416,736 US20060278951A1 (en) 2005-06-09 2006-05-03 Metal oxide semiconductor (MOS) field effect transistor having trench isolation region and method of fabricating the same
JP2006143089A JP2006344943A (ja) 2005-06-09 2006-05-23 トレンチ分離領域を有するｍｏｓ電界効果トランジスタ及びその製造方法
CN2006100842908A CN1877858B (zh) 2005-06-09 2006-05-30 金属氧化物半导体场效应晶体管及其制造方法
US12/498,652 US8416599B2 (en) 2005-06-09 2009-07-07 Metal oxide semiconductor (MOS) field effect transistor having trench isolation region and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050049251A KR100699843B1 (ko) 2005-06-09 2005-06-09 트렌치 분리영역을 갖는 모스 전계효과 트랜지스터 및 그제조방법

Publications (2)

Publication Number Publication Date
KR20060130917A KR20060130917A (ko) 2006-12-20
KR100699843B1 true KR100699843B1 (ko) 2007-03-27

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KR1020050049251A Expired - Lifetime KR100699843B1 (ko) 2005-06-09 2005-06-09 트렌치 분리영역을 갖는 모스 전계효과 트랜지스터 및 그제조방법

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US (2) US20060278951A1 (enExample)
JP (1) JP2006344943A (enExample)
KR (1) KR100699843B1 (enExample)
CN (1) CN1877858B (enExample)

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JP5298432B2 (ja) * 2007-01-31 2013-09-25 富士電機株式会社 半導体装置およびその製造方法
JP2009141278A (ja) * 2007-12-10 2009-06-25 Toshiba Corp 不揮発性半導体記憶装置
US8174071B2 (en) * 2008-05-02 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage LDMOS transistor
US8237233B2 (en) * 2008-08-19 2012-08-07 International Business Machines Corporation Field effect transistor having a gate structure with a first section above a center portion of the channel region and having a first effective work function and second sections above edges of the channel region and having a second effective work function
KR101543330B1 (ko) * 2009-08-05 2015-08-11 삼성전자주식회사 반도체 소자의 제조 방법
CN102916038B (zh) * 2011-08-04 2015-12-16 北大方正集团有限公司 一种场效应晶体管及其制造方法
KR20130081505A (ko) * 2012-01-09 2013-07-17 삼성전자주식회사 반도체 장치, 반도체 시스템, 상기 반도체 장치의 제조 방법
US8921188B2 (en) * 2013-02-07 2014-12-30 Globalfoundries Inc. Methods of forming a transistor device on a bulk substrate and the resulting device
KR102552949B1 (ko) * 2016-09-02 2023-07-06 삼성전자주식회사 반도체 장치
US10833206B2 (en) 2018-12-11 2020-11-10 Micron Technology, Inc. Microelectronic devices including capacitor structures and methods of forming microelectronic devices
CN112071758B (zh) * 2019-06-11 2025-01-24 芯恩（青岛）集成电路有限公司 填埋式三维金属-氧化物场效应晶体管及制备方法
CN110707090B (zh) * 2019-09-30 2022-09-20 长江存储科技有限责任公司 一种位线驱动器
CN112151616B (zh) * 2020-08-20 2022-12-16 中国科学院微电子研究所 一种堆叠mos器件及其制备方法
CN115312590A (zh) * 2022-09-02 2022-11-08 杭州富芯半导体有限公司 半导体制备方法和半导体结构

Citations (4)

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JPH06181318A (ja) * 1992-12-11 1994-06-28 Citizen Watch Co Ltd 半導体不揮発性記憶素子およびその製造方法
KR19990050035A (ko) * 1997-12-16 1999-07-05 구본준 트랜지스터의 형성 방법
KR20020073984A (ko) * 2001-03-19 2002-09-28 삼성전자 주식회사 게이트 전극 형성 방법 및 그 방법에 따라 형성된 게이트전극 구조
KR20050010152A (ko) * 2003-07-18 2005-01-27 주식회사 하이닉스반도체 반도체 소자의 저전압 트랜지스터 및 그 제조방법

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KR960006004A (ko) * 1994-07-25 1996-02-23 김주용 반도체 소자 및 그 제조방법
JP3050301B2 (ja) * 1997-11-21 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
US6097069A (en) * 1998-06-22 2000-08-01 International Business Machines Corporation Method and structure for increasing the threshold voltage of a corner device
US6171910B1 (en) * 1999-07-21 2001-01-09 Motorola Inc. Method for forming a semiconductor device
KR100338767B1 (ko) * 1999-10-12 2002-05-30 윤종용 트렌치 소자분리 구조와 이를 갖는 반도체 소자 및 트렌치 소자분리 방법
EP1139419A1 (en) * 2000-03-29 2001-10-04 STMicroelectronics S.r.l. Method of manufacturing an electrically programmable, non-volatile memory with logic circuitry
JP2002222942A (ja) * 2001-01-25 2002-08-09 Nec Corp 半導体装置およびその製造方法
US20020197823A1 (en) * 2001-05-18 2002-12-26 Yoo Jae-Yoon Isolation method for semiconductor device
JP2003133549A (ja) 2001-10-29 2003-05-09 Nec Corp Ｍｏｓｆｅｔ及びその製造方法
CN1479350A (zh) * 2002-08-27 2004-03-03 上海宏力半导体制造有限公司 形成不同厚度的双栅极绝缘层的方法
KR100553683B1 (ko) * 2003-05-02 2006-02-24 삼성전자주식회사 반도체 소자 및 그 제조 방법

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JPH06181318A (ja) * 1992-12-11 1994-06-28 Citizen Watch Co Ltd 半導体不揮発性記憶素子およびその製造方法
KR19990050035A (ko) * 1997-12-16 1999-07-05 구본준 트랜지스터의 형성 방법
KR20020073984A (ko) * 2001-03-19 2002-09-28 삼성전자 주식회사 게이트 전극 형성 방법 및 그 방법에 따라 형성된 게이트전극 구조
KR20050010152A (ko) * 2003-07-18 2005-01-27 주식회사 하이닉스반도체 반도체 소자의 저전압 트랜지스터 및 그 제조방법

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Also Published As

Publication number Publication date
US20060278951A1 (en) 2006-12-14
US8416599B2 (en) 2013-04-09
CN1877858A (zh) 2006-12-13
CN1877858B (zh) 2010-09-29
KR20060130917A (ko) 2006-12-20
US20090269898A1 (en) 2009-10-29
JP2006344943A (ja) 2006-12-21

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