JP2012500485A - デュアル金属ゲートのコーナー部 - Google Patents
デュアル金属ゲートのコーナー部 Download PDFInfo
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- JP2012500485A JP2012500485A JP2011523384A JP2011523384A JP2012500485A JP 2012500485 A JP2012500485 A JP 2012500485A JP 2011523384 A JP2011523384 A JP 2011523384A JP 2011523384 A JP2011523384 A JP 2011523384A JP 2012500485 A JP2012500485 A JP 2012500485A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 134
- 239000002184 metal Substances 0.000 title claims abstract description 134
- 230000009977 dual effect Effects 0.000 title abstract description 3
- 239000004020 conductor Substances 0.000 claims abstract description 110
- 230000005669 field effect Effects 0.000 claims abstract description 49
- 238000002955 isolation Methods 0.000 claims abstract description 46
- 239000003989 dielectric material Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 description 32
- 239000002019 doping agent Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- -1 HfSiON Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】 上記を鑑みて、改善された電界効果トランジスタ(FET)構造体、及び該構造体を形成する方法の実施形態が開示される。このFET構造体の実施形態の各々は、固有のゲート構造体を組み込む。具体的には、このゲート構造体は、FETチャネル領域の中央部分の上方の第1のセクションと、チャネル幅のエッジの上方(すなわち、チャネル領域と隣接する分離領域との間の界面の上方)の第2のセクションとを有する。第1のセクション及び第2のセクションは、これらが異なる有効仕事関数(すなわち、それぞれ第1の有効仕事関数及び第2の有効仕事関数)を有する点で異なる(すなわち、これらは、異なるゲート誘電体層及び/又は異なるゲート導体層を有する)。チャネル幅のエッジにおける閾値電圧が上昇することを確実にするように、異なる有効仕事関数が選択される。
【選択図】 図2
Description
の金属又は金属合金(例えば、半導体本体110のEcの0.2eV内の金属又は金属合金)として定義されることに留意すべきである。例示的なn型又は金属合金は、これらに限られるものではないが、窒化チタン、窒化チタンシリコン、窒化タンタル、窒化タンタルシリコン、アルミニウム、銀、ハフニウム等を含む。これに対して、p型金属又は金属合金は、近価電子帯(near valence band)の金属又は金属合金(例えば、半導体本体110のEvの0.2eV内の金属又は金属合金)として定義される。例示的なp型金属又は金属合金は、これらに限られるものではないが、レニウム、酸化レニウム、白金、ルテニウム、酸化ルテニウム、ニッケル、パラジウム、イリジウム等を含む。さらに、高k誘電体材料は、3.9を上回る(すなわち、SiO2の誘電率を上回る)誘電率「k」を有する誘電体材料を含むことを理解すべきである。例示的な高k誘電体材料は、これらに限られるものではないが、ハフニウム・ベースの材料(例えば、HfO2、HfSiO、HfSiON、又はHfAlO)、又は他の何らかの好適な高k誘電体材料(例えば、Al2O3、TaO5、ZrO5等)を含む。
101:基板
103:半導体材料
110:半導体本体
120:分離領域
150:チャネル領域
151:中央部分
152:側壁
160:ソース/ドレイン領域
171:第1のセクション
172:第2のセクション
180:幅
200、300、400:ゲート構造体
211:ゲート誘電体層
221、421:第1のゲート導体層
222、422:第2のゲート導体層
311、411:第1のゲート誘電体層
312、412:第2のゲート誘電体層
321:金属ゲート導体層
Claims (25)
- 基板と、
側壁と中央部分とを有するチャネル領域を含む、前記基板上の半導体本体と、
前記側壁に横方向に隣接して配置された前記基板上の分離領域と、
前記チャネル領域の幅を横切り、前記側壁を超えて前記分離領域の上に横方向にさらに延びるゲート構造体と、
を含み、
前記ゲート構造体は、前記中央部分の上方の第1のセクションと、前記側壁の上方の、前記第1のセクションとは異なる第2のセクションとを含み、
前記第1のセクションは第1の有効仕事関数を有し、前記第2のセクションは、前記第1の有効仕事関数とは異なる第2の有効仕事関数を有する、
電界効果トランジスタ。 - 前記第1のセクションは前記第1の有効仕事関数を有し、前記第2のセクションは前記第2の有効仕事関数を有し、前記側壁における第2の閾値電圧は、前記中央部分における第1の閾値電圧と少なくとも等しくなる、請求項1に記載の電界効果トランジスタ。
- 前記第1のセクションは、前記中央部分の上方の第1のゲート導体層を含み、
前記第2のセクションは、前記側壁の上方の第2のゲート導体層を含み、
前記第1のゲート導体層及び前記第2のゲート導体層は、異なる導電材料を含む、請求項1又は請求項2のいずれかに記載の電界効果トランジスタ。 - 前記第1のゲート導体層は第1の金属を含み、前記第2のゲート導体層は、前記第1の金属とは異なる第2の金属を含む、請求項3に記載の電界効果トランジスタ。
- 前記第1のゲート導体層は、前記第1の金属の上方の前記第2の金属をさらに含む、請求項4に記載の電界効果トランジスタ。
- 前記第1のゲート導体層は金属を含み、前記第2のゲート導体層はドープされたポリシリコンを含む、請求項3に記載の電界効果トランジスタ。
- 前記第1のセクションは、前記中央部分の上方の第1のゲート誘電体層を含み、
前記第2のセクションは、前記側壁の上方の第2のゲート誘電体層を含み、
前記第1のゲート誘電体層及び前記第2のゲート誘電体層は、異なる一定の電荷量を有する異なるゲート誘電体材料を含む、請求項1又は請求項2のいずれかに記載の電界効果トランジスタ。 - 前記第1のゲート誘電体層は第1の高k誘電体材料を含み、前記第2のゲート誘電体層は、前記第1の高k誘電体材料とは異なる第2の高k誘電体材料を含む、請求項7に記載の電界効果トランジスタ。
- 基板と、
側壁と中央部分とを有するチャネル領域を含む、前記基板上の半導体本体と、
前記側壁に横方向に隣接して配置された前記基板上の分離領域と、
前記チャネル領域の幅を横切り、前記側壁を超えて前記分離領域の上に横方向にさらに延びるゲート構造体と、
を含み、
前記ゲート構造体は、前記中央部分の上方の第1のセクションと、前記側壁の上方の第2のセクションとを含み、
前記第1のセクション及び前記第2のセクションが、異なるゲート誘電体層及び異なるゲート導体層を含み、前記第1のセクションは第1の有効仕事関数を有し、前記第2のセクションは、前記第1の有効仕事関数とは異なる第2の有効仕事関数を有する、電界効果トランジスタ。 - 前記第1のセクションは前記第1の有効仕事関数を有し、前記第2のセクションは前記第2の有効仕事関数を有し、前記側壁における第2の閾値電圧は、前記中央部分における第1の閾値電圧と少なくとも等しくなる、請求項9に記載の電界効果トランジスタ。
- 前記第1のセクションは、第1の金属を含む第1のゲート導体層を含み、前記第2のセクションは、前記第1の金属とは異なる第2の金属を含む第2のゲート導体層を含む、請求項9又は請求項10のいずれかに記載の電界効果トランジスタ。
- 前記第1のゲート導体層は、前記第1の金属の上方の前記第2の金属をさらに含む、請求項11に記載の電界効果トランジスタ。
- 前記第1のセクションは、金属を含む第1のゲート導体層を含み、前記第2のセクションは、ドープされたポリシリコンを含む第2のゲート導体層を含む、請求項9に記載の電界効果トランジスタ。
- 前記異なるゲート誘電体層は、異なる一定の電荷量を有する異なる高kゲート誘電体層を含む、請求項9に記載の電界効果トランジスタ。
- 前記第2のセクションは、積層された複数のゲート誘電体層をさらに含む、請求項9に記載の電界効果トランジスタ。
- 電界効果トランジスタを形成する方法であって、
基板を準備することと、
前記基板上に、半導体本体と、前記半導体本体の側壁に横方向に隣接して配置された分離領域とを形成することと、
前記半導体本体のチャネル領域の幅を横切り、前記側壁を超えて前記分離領域の上に横方向にさらに延びるゲート構造体を形成することと、
を含み、
前記ゲート構造体を形成することは、前記チャネル領域の中央部分の上方の、第1の有効仕事関数を有する第1のセクションと、前記側壁の上方の前記第1の有効仕事関数とは異なる第2の有効仕事関数を有する第2のセクションとを有する前記ゲート構造体を形成することを含む、前記方法。 - 前記第1のセクションの前記第1の有効仕事関数及び前記第2のセクションの前記第2の有効仕事関数により、前記側壁における第2の閾値電圧が、前記中央部分における第1の閾値電圧と少なくとも等しくなる、請求項16に記載の方法。
- 前記ゲート構造体を形成することは、
前記チャネル領域の前記幅を横切り、前記側壁を超えて前記分離領域の上に横方向にさらに延びるゲート誘電体層を形成することと、
前記チャネル領域の前記中央部分の上方の前記ゲート誘電体層上に、第1のゲート導体層を形成することと、
前記側壁の上方の前記ゲート誘電体層上に、前記第1のゲート導体層とは異なる第2のゲート導体層を形成することと、
を含む、請求項16又は請求項17のいずれかに記載の方法。 - 前記第1のゲート導体層を形成すること及び前記第2のゲート導体層を形成することは、
第1の金属を堆積することと、
前記第1の金属が前記中央部分の上方にだけ残るように、前記第1の金属をパターン形成することと、
前記第1の金属とは異なる仕事関数を有する第2の金属を堆積することと、
前記第2の金属が、前記第1の金属上及び前記側壁の上方の前記ゲート誘電体層上に残るように、前記第2の金属をパターン形成することと、
を含む、請求項18に記載の方法。 - 前記第1のゲート導体層を形成すること及び前記第2のゲート導体層を形成することは、
金属を堆積することと、
前記金属が前記中央部分の上方にだけ残るように、前記金属をパターン形成することと、
ドープされたポリシリコンを堆積することと、
前記ドープされたポリシリコンが、前記金属上及び前記側壁の上方の前記ゲート誘電体層上に残るように、前記ドープされたポリシリコンをパターン形成することと、
を含む、請求項18に記載の方法。 - 前記ゲート構造体を形成することは、
前記チャネル領域の前記中央部分の上方に、第1のゲート誘電体層を形成することと、
前記第1のゲート誘電体層に隣接して前記側壁の上に、前記第1のゲート誘電体層とは異なる第2のゲート誘電体層を形成することであって、前記第1のゲート誘電体層及び前記第2のゲート誘電体層は、異なる一定の電荷量を有する、当該形成することと、
前記第1のゲート誘電体層上及び前記第2のゲート誘電体層上に、ゲート導体層を形成することと、
を含む、請求項16に記載の方法。 - 前記第1のゲート誘電体層を形成することは、第1の高k誘電体材料を用いることを含み、前記第2のゲート誘電体層を形成することは、前記第1の高k誘電体材料とは異なる第2の高k誘電体材料を用いることを含む、請求項21に記載の方法。
- 電界効果トランジスタを形成する方法であって、
基板を準備することと、
前記基板上に、半導体本体と、前記半導体本体の側壁に横方向に隣接して配置された分離領域とを形成することと、
前記半導体本体のチャネル領域の幅を横切り、前記側壁を超えて前記分離領域の上に横方向にさらに延びるゲート構造体を形成することと、
を含み、
前記ゲート構造体を形成することは、第1のセクション及び第2のセクションが異なるゲート誘電体層及び異なるゲート導体層を有するように、前記チャネル領域の中央部分の上方の第1のセクションと、前記側壁の上方の第2のセクションとを有する前記ゲート構造体を形成することを含む、前記方法。 - 前記ゲート構造体を形成することは、前記第1のセクションが第1の有効仕事関数を有し、前記第2のセクションが、前記第1の有効仕事関数とは異なる第2の有効仕事関数を有するように前記ゲート構造体を形成し、前記側壁における第2の閾値電圧が、前記中央部分における第1の閾値電圧と少なくとも等しくすることを含む、請求項23に記載の方法。
- 前記ゲート構造体を形成することは、
前記チャネル領域の前記幅を横切り、前記側壁を超えて前記分離領域の上に横方向にさらに延びる第1のゲート誘電体層を形成することと、
前記第1のゲート誘電体層上の前記中央部分の上方に、第1のゲート導体層を形成することと、
前記側壁の上方の前記第1のゲート誘電体層上に、前記第1のゲート誘電体層とは異なり、かつ、前記第1のゲート誘電体層とは異なる一定の電荷量を有する第2のゲート誘電体層を形成することと、
前記第2のゲート誘電体層上及び前記第1のゲート導体層上に、前記第1のゲート導体層とは異なる第2のゲート導体層を形成することと、
を含む、請求項23又は請求項24のいずれかに記載の方法。
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US12/194,039 | 2008-08-19 | ||
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US8237233B2 (en) | 2012-08-07 |
US20140070330A1 (en) | 2014-03-13 |
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