JP2006310621A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000012535 impurity Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 abstract description 18
- 239000010410 layer Substances 0.000 description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 150000001638 boron Chemical class 0.000 description 2
- -1 boron ion Chemical class 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
トレンチゲート間の距離が離れている構造の縦型パワーMOSFETにおいて、高いソース−ドレイン間の耐圧と低オン抵抗を実現することは困難であった。
【解決手段】
本発明にかかる半導体装置は、トレンチゲートが形成される第1のトレンチ5を複数有する縦型パワーMOSFETであって、第1のトレンチ5下部に設けられ、第1の導電型のエピタキシャル層2内に縦方向に形成された第2の導電型の第1のコラム領域11と、第1のトレンチ5間のベース領域の下部に設けられ、前記第1の導電型のエピタキシャル層2内に縦方向に形成された第2の導電型の第2のコラム領域12とを有し、第1のコラム領域11と前記第2のコラム領域12の空乏電荷量の和は、第1の導電型のエピタキシャル層2の空乏電荷量と略同一である。
【選択図】図1
Description
して、スーパージャンクション(Superjunction)と呼ばれる技術が提案さ
れている。
IEEE Proceeding of 2004 International Symposium on Power Semiconductor Devices & IC's, H.Ninomiya, Y.Miura, K.Kobayashi, 'Ultra-low On-resistance 60-100V Superjunction UMOSFETs Fabricated by Multiple Ion Implantation'
実施の形態1にかかる縦型パワーMOSFETの断面図を図1に示す。当該縦型パワーMOSFETは、第1の導電型(例えば、N+型)のシリコン基板1表面に形成されたN+型よりも不純物濃度の低いN型エピタキシャル層2表面に、第2の導電型(例えば、P型)のベース層3が形成されている。P型ベース層3の表面には選択的にN+型ソース層4が形成されている。また、P型ベース層3及びN+型ソース層4を貫通してN型エピタキシャル層2に形成された第1のトレンチ(例えば、ゲートトレンチ)5内には、ゲート酸化膜6及びポリシリコンで形成されるトレンチゲート7が埋め込まれている。
実施の形態2にかかる縦型パワーMOSFETの断面図を図5に示す。図5に示す縦型パワーMOSFETは、実施の形態1にかかる縦型パワーMOSFETが連続した領域でP型コラム領域11、12を形成しているのに対して、分離したP型コラム領域11、12を有している。実施の形態2では、P型コラム領域11、12はそれぞれ縦方向に2つに分割して形成されている。また、N+型ソース層4の表面を基準(0μm)とした場合、例えばP型ベース層の底面の深さは1μm程度であって、浅い層に形成されるコラム領域の深さは2μm程度であり、深い層に形成されるコラム領域の深さは3μm程度で形成される。その他形状は実施の形態1にかかる縦型パワーMOSFETと実施の形態2にかかる縦型パワーMOSFETでは実質的に同じものである。
2 N型エピタキシャル層
3 P型ベース層
4 N+型ソース層
5 ゲートトレンチ
6 ゲート酸化膜
7 トレンチゲート
8 層間酸化膜
9 コラムトレンチ
10 ソース電極
11、12 P型コラム領域
13 ドレイン電極
Claims (9)
- トレンチゲートが形成される第1のトレンチを複数有する縦型パワーMOSFETであって、
前記第1のトレンチ下部に設けられ、第1の導電型のエピタキシャル層内に縦方向に形成された第2の導電型の第1のコラム領域と、
前記第1のトレンチ間のベース領域の下部に設けられ、前記第1の導電型のエピタキシャル層内に縦方向に形成された前記第2の導電型の第2のコラム領域とを有し、
前記第1のコラム領域と前記第2のコラム領域の空乏電荷量の和は、前記第1の導電型のエピタキシャル層の空乏電荷量と略同一である半導体装置。 - 前記第1のコラム領域は前記第1のトレンチから分離して形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記第2のコラム領域は前記ベース領域と連続して形成されることを特徴とする請求項1又は2に記載の半導体装置。
- 前記第2のコラム領域は前記ベース領域と分離して形成されることを特徴とする請求項1又は2に記載の半導体装置。
- 前記第1、第2のコラム領域はそれぞれ、連続した領域であることを特徴とした請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記第1、第2のコラム領域はそれぞれ、複数の分離した領域を有していることを特徴とした請求項1乃至5のいずれか1項に記載の半導体装置。
- 前記第2のコラムは、前記ベース領域の表面に形成される第2のトレンチの下部に形成されることを特徴とする請求項1乃至6のいずれか1項に記載の半導体装置。
- 第1の導電型のエピタキシャル層にトレンチゲートが形成される第1のトレンチを複数形成し、
前記トレンチの下部に第2の導電型の不純物を注入して、第1のコラム領域を形成し、
前記第1のトレンチの間に形成されるベース領域の下部に前記第2の導電型の不純物を注入することで第2のコラム領域を形成し、
前記第1、第2のコラム領域の空乏電荷量を、前記エピタキシャル層の空乏電荷量と略同一になる不純物濃度で形成する半導体装置の製造方法。 - 前記第2のコラム領域は、前記ベース領域の表面に形成される第2のトレンチの下部に形成されることを特徴とする請求項8に記載の半導体装置の製造方法。
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JP2005132443A JP5074671B2 (ja) | 2005-04-28 | 2005-04-28 | 半導体装置およびその製造方法 |
US11/192,011 US7332770B2 (en) | 2005-04-28 | 2005-07-29 | Semiconductor device |
US11/987,191 US7645661B2 (en) | 2005-04-28 | 2007-11-28 | Semiconductor device |
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Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027193A (ja) * | 2005-07-12 | 2007-02-01 | Renesas Technology Corp | 半導体装置およびその製造方法、ならびに非絶縁型dc/dcコンバータ |
JP2010016309A (ja) * | 2008-07-07 | 2010-01-21 | Nec Electronics Corp | 半導体装置 |
JP2010027680A (ja) * | 2008-07-15 | 2010-02-04 | Rohm Co Ltd | 半導体装置および半導体装置に製造方法 |
JP2010123789A (ja) * | 2008-11-20 | 2010-06-03 | Toshiba Corp | 電力用半導体装置 |
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Also Published As
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JP5074671B2 (ja) | 2012-11-14 |
US7645661B2 (en) | 2010-01-12 |
US20060244054A1 (en) | 2006-11-02 |
US7332770B2 (en) | 2008-02-19 |
US20080085586A1 (en) | 2008-04-10 |
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