JP2006172702A5 - - Google Patents

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Publication number
JP2006172702A5
JP2006172702A5 JP2005359515A JP2005359515A JP2006172702A5 JP 2006172702 A5 JP2006172702 A5 JP 2006172702A5 JP 2005359515 A JP2005359515 A JP 2005359515A JP 2005359515 A JP2005359515 A JP 2005359515A JP 2006172702 A5 JP2006172702 A5 JP 2006172702A5
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JP
Japan
Prior art keywords
selection line
column selection
command
generation device
signal generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005359515A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006172702A (ja
JP5037006B2 (ja
Filing date
Publication date
Priority claimed from KR1020040104713A external-priority patent/KR100610018B1/ko
Application filed filed Critical
Publication of JP2006172702A publication Critical patent/JP2006172702A/ja
Publication of JP2006172702A5 publication Critical patent/JP2006172702A5/ja
Application granted granted Critical
Publication of JP5037006B2 publication Critical patent/JP5037006B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005359515A 2004-12-13 2005-12-13 半導体メモリ装置のカラム選択線信号生成装置 Expired - Fee Related JP5037006B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040104713A KR100610018B1 (ko) 2004-12-13 2004-12-13 반도체 메모리 장치의 컬럼 선택선 신호 생성 장치
KR10-2004-0104713 2004-12-13

Publications (3)

Publication Number Publication Date
JP2006172702A JP2006172702A (ja) 2006-06-29
JP2006172702A5 true JP2006172702A5 (enExample) 2008-11-27
JP5037006B2 JP5037006B2 (ja) 2012-09-26

Family

ID=36583628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005359515A Expired - Fee Related JP5037006B2 (ja) 2004-12-13 2005-12-13 半導体メモリ装置のカラム選択線信号生成装置

Country Status (3)

Country Link
US (1) US7295488B2 (enExample)
JP (1) JP5037006B2 (enExample)
KR (1) KR100610018B1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100821573B1 (ko) * 2006-04-05 2008-04-15 주식회사 하이닉스반도체 반도체 메모리의 컬럼 선택신호 생성장치
DE102006029169B4 (de) * 2006-06-24 2009-03-26 Qimonda Ag Speicherbaustein mit veränderbarer Spaltenselektionsdauer
KR100868251B1 (ko) * 2007-03-22 2008-11-12 주식회사 하이닉스반도체 반도체 메모리장치
KR100852002B1 (ko) * 2007-05-14 2008-08-13 주식회사 하이닉스반도체 반도체 메모리 장치의 컬럼 선택신호의 펄스 폭 제어회로
KR100881134B1 (ko) * 2007-06-27 2009-02-02 주식회사 하이닉스반도체 컬럼 엑세스 제어 장치
KR100924347B1 (ko) * 2008-01-03 2009-10-30 주식회사 하이닉스반도체 컬럼 선택 신호 제어 장치 및 방법
KR100967112B1 (ko) * 2008-11-10 2010-07-05 주식회사 하이닉스반도체 출력 인에이블 신호 생성회로
KR100980061B1 (ko) * 2008-12-23 2010-09-03 주식회사 하이닉스반도체 제어신호 생성회로
KR101020290B1 (ko) 2009-01-12 2011-03-07 주식회사 하이닉스반도체 버스트모드 제어회로
KR101047003B1 (ko) * 2009-06-26 2011-07-06 주식회사 하이닉스반도체 프리차지신호 생성회로 및 반도체 메모리 장치
KR101052078B1 (ko) * 2010-02-26 2011-07-27 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 동작 방법
US9563253B2 (en) 2013-03-12 2017-02-07 Intel Corporation Techniques for power saving on graphics-related workloads
US9715909B2 (en) * 2013-03-14 2017-07-25 Micron Technology, Inc. Apparatuses and methods for controlling data timing in a multi-memory system
KR102686058B1 (ko) * 2016-09-06 2024-07-17 에스케이하이닉스 주식회사 반도체장치
US11462261B2 (en) * 2019-10-10 2022-10-04 Micron Technology, Inc. Methods of activating input/output lines of memory devices, and related devices and systems
US11715503B2 (en) 2021-03-26 2023-08-01 Changxin Memory Technologies, Inc. Signal generation circuit and memory
CN116072170B (zh) 2021-11-03 2025-06-27 长鑫存储技术有限公司 存储器读写电路、存储器控制方法及电子设备
CN116072169B (zh) * 2021-11-03 2025-06-27 长鑫存储技术有限公司 存储器读写电路、存储器控制方法及电子设备
TWI849542B (zh) * 2022-10-20 2024-07-21 晶豪科技股份有限公司 適應性產生行選擇線訊號的方法及電路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0157289B1 (ko) * 1995-11-13 1998-12-01 김광호 컬럼 선택 신호 제어회로
US6038176A (en) * 1997-12-10 2000-03-14 Winbond Electronics Corporation Presettable semiconductor memory device
JPH11306758A (ja) * 1998-04-27 1999-11-05 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2000021198A (ja) * 1998-06-30 2000-01-21 Mitsubishi Electric Corp 同期型半導体集積回路装置
JP2003059264A (ja) * 2001-08-08 2003-02-28 Hitachi Ltd 半導体記憶装置
US6972978B1 (en) * 2002-03-15 2005-12-06 Integrated Device Technology, Inc. Content addressable memory (CAM) devices with block select and pipelined virtual sector look-up control and methods of operating same
KR100416622B1 (ko) * 2002-04-27 2004-02-05 삼성전자주식회사 동기식 반도체 메모리장치의 컬럼 디코더 인에이블 타이밍제어방법 및 장치
ITMI20021540A1 (it) 2002-07-12 2004-01-12 St Microelectronics Srl Regolatore di tensione multifase di tipo buck
JP2004178729A (ja) * 2002-11-28 2004-06-24 Hitachi Ltd 半導体記憶装置

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