JP2011018427A5 - - Google Patents

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Publication number
JP2011018427A5
JP2011018427A5 JP2009164242A JP2009164242A JP2011018427A5 JP 2011018427 A5 JP2011018427 A5 JP 2011018427A5 JP 2009164242 A JP2009164242 A JP 2009164242A JP 2009164242 A JP2009164242 A JP 2009164242A JP 2011018427 A5 JP2011018427 A5 JP 2011018427A5
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JP
Japan
Prior art keywords
command
bank
address
write
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009164242A
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English (en)
Japanese (ja)
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JP2011018427A (ja
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Publication date
Application filed filed Critical
Priority to JP2009164242A priority Critical patent/JP2011018427A/ja
Priority claimed from JP2009164242A external-priority patent/JP2011018427A/ja
Priority to US12/801,860 priority patent/US8520460B2/en
Publication of JP2011018427A publication Critical patent/JP2011018427A/ja
Publication of JP2011018427A5 publication Critical patent/JP2011018427A5/ja
Pending legal-status Critical Current

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JP2009164242A 2009-07-10 2009-07-10 半導体記憶装置 Pending JP2011018427A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009164242A JP2011018427A (ja) 2009-07-10 2009-07-10 半導体記憶装置
US12/801,860 US8520460B2 (en) 2009-07-10 2010-06-29 Semiconductor memory device and access method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009164242A JP2011018427A (ja) 2009-07-10 2009-07-10 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2011018427A JP2011018427A (ja) 2011-01-27
JP2011018427A5 true JP2011018427A5 (enExample) 2012-04-05

Family

ID=43427383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009164242A Pending JP2011018427A (ja) 2009-07-10 2009-07-10 半導体記憶装置

Country Status (2)

Country Link
US (1) US8520460B2 (enExample)
JP (1) JP2011018427A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761297B1 (en) * 2016-12-30 2017-09-12 Intel Corporation Hidden refresh control in dynamic random access memory
KR102412609B1 (ko) * 2017-11-03 2022-06-23 삼성전자주식회사 내부 커맨드에 따른 어드레스에 대한 저장 및 출력 제어를 수행하는 메모리 장치 및 그 동작방법
US12135901B2 (en) 2019-08-27 2024-11-05 Rambus Inc. Joint command dynamic random access memory (DRAM) apparatus and methods
US11538510B2 (en) 2020-04-24 2022-12-27 Micron Technology, Inc. Methods of charging local input/output lines of memory devices, and related devices and systems
CN113689902B (zh) * 2020-05-19 2023-09-01 长鑫存储技术有限公司 生成存储器地址数据的方法、计算机可读存储介质及设备
US11120851B1 (en) * 2020-07-12 2021-09-14 Winbond Electronics Corp. Memory apparatus and burst read and burst write method thereof
US11409674B2 (en) * 2020-10-02 2022-08-09 Micron Technology, Inc. Memory with improved command/address bus utilization
US11468938B2 (en) * 2020-11-12 2022-10-11 Micron Technology, Inc. Memory with programmable refresh order and stagger time

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5386385A (en) * 1994-01-31 1995-01-31 Texas Instruments Inc. Method and apparatus for preventing invalid operating modes and an application to synchronous memory devices
JP4011833B2 (ja) * 2000-06-30 2007-11-21 株式会社東芝 半導体メモリ
KR100396894B1 (ko) * 2001-06-27 2003-09-02 삼성전자주식회사 버스 효율을 향상시키는 메모리 시스템 및 반도체 메모리장치와 상기 반도체 메모리 장치의 리프레쉬 방법
JP4614650B2 (ja) 2003-11-13 2011-01-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2005222581A (ja) * 2004-02-03 2005-08-18 Renesas Technology Corp 半導体記憶装置
JP2006190404A (ja) 2005-01-07 2006-07-20 Seiko Epson Corp 半導体メモリ装置
JP2006269029A (ja) * 2005-03-25 2006-10-05 Victor Co Of Japan Ltd メモリ制御装置およびメモリ制御方法
JP4428319B2 (ja) * 2005-08-30 2010-03-10 エルピーダメモリ株式会社 半導体記憶装置およびバンク・リフレッシュ方法
US7313047B2 (en) * 2006-02-23 2007-12-25 Hynix Semiconductor Inc. Dynamic semiconductor memory with improved refresh mechanism
JP5157207B2 (ja) * 2007-03-16 2013-03-06 富士通セミコンダクター株式会社 半導体メモリ、メモリコントローラ、システムおよび半導体メモリの動作方法

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