JP2018073402A5 - - Google Patents

Download PDF

Info

Publication number
JP2018073402A5
JP2018073402A5 JP2017201264A JP2017201264A JP2018073402A5 JP 2018073402 A5 JP2018073402 A5 JP 2018073402A5 JP 2017201264 A JP2017201264 A JP 2017201264A JP 2017201264 A JP2017201264 A JP 2017201264A JP 2018073402 A5 JP2018073402 A5 JP 2018073402A5
Authority
JP
Japan
Prior art keywords
computing
cell array
column
dram
predetermined number
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017201264A
Other languages
English (en)
Japanese (ja)
Other versions
JP6799520B2 (ja
JP2018073402A (ja
Filing date
Publication date
Priority claimed from US15/426,033 external-priority patent/US10242728B2/en
Application filed filed Critical
Publication of JP2018073402A publication Critical patent/JP2018073402A/ja
Publication of JP2018073402A5 publication Critical patent/JP2018073402A5/ja
Application granted granted Critical
Publication of JP6799520B2 publication Critical patent/JP6799520B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2017201264A 2016-10-27 2017-10-17 Dram基盤プロセシングユニット Active JP6799520B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201662413977P 2016-10-27 2016-10-27
US62/413977 2016-10-27
US201662418155P 2016-11-04 2016-11-04
US62/418155 2016-11-04
US15/426,033 US10242728B2 (en) 2016-10-27 2017-02-06 DPU architecture
US15/426033 2017-02-06

Publications (3)

Publication Number Publication Date
JP2018073402A JP2018073402A (ja) 2018-05-10
JP2018073402A5 true JP2018073402A5 (enExample) 2020-11-26
JP6799520B2 JP6799520B2 (ja) 2020-12-16

Family

ID=62022501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017201264A Active JP6799520B2 (ja) 2016-10-27 2017-10-17 Dram基盤プロセシングユニット

Country Status (5)

Country Link
US (1) US10242728B2 (enExample)
JP (1) JP6799520B2 (enExample)
KR (1) KR102139213B1 (enExample)
CN (1) CN108008974B (enExample)
TW (1) TWI714806B (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10847212B1 (en) 2016-12-06 2020-11-24 Gsi Technology, Inc. Read and write data processing circuits and methods associated with computational memory cells using two read multiplexers
US10998040B2 (en) 2016-12-06 2021-05-04 Gsi Technology, Inc. Computational memory cell and processing array device using the memory cells for XOR and XNOR computations
US10854284B1 (en) 2016-12-06 2020-12-01 Gsi Technology, Inc. Computational memory cell and processing array device with ratioless write port
US11227653B1 (en) 2016-12-06 2022-01-18 Gsi Technology, Inc. Storage array circuits and methods for computational memory cells
US10943648B1 (en) 2016-12-06 2021-03-09 Gsi Technology, Inc. Ultra low VDD memory cell with ratioless write port
US10860320B1 (en) 2016-12-06 2020-12-08 Gsi Technology, Inc. Orthogonal data transposition system and method during data transfers to/from a processing array
US10847213B1 (en) 2016-12-06 2020-11-24 Gsi Technology, Inc. Write data processing circuits and methods associated with computational memory cells
US10777262B1 (en) 2016-12-06 2020-09-15 Gsi Technology, Inc. Read data processing circuits and methods associated memory cells
US10770133B1 (en) 2016-12-06 2020-09-08 Gsi Technology, Inc. Read and write data processing circuits and methods associated with computational memory cells that provides write inhibits and read bit line pre-charge inhibits
US10521229B2 (en) 2016-12-06 2019-12-31 Gsi Technology, Inc. Computational memory cell and processing array device using memory cells
US10891076B1 (en) 2016-12-06 2021-01-12 Gsi Technology, Inc. Results processing circuits and methods associated with computational memory cells
US10614875B2 (en) 2018-01-30 2020-04-07 Micron Technology, Inc. Logical operations using memory cells
CN108985449B (zh) * 2018-06-28 2021-03-09 中国科学院计算技术研究所 一种对卷积神经网络处理器的控制方法及装置
US10755766B2 (en) 2018-09-04 2020-08-25 Micron Technology, Inc. Performing logical operations using a logical operation component based on a rate at which a digit line is discharged
KR20200057475A (ko) 2018-11-16 2020-05-26 삼성전자주식회사 연산 회로를 포함하는 메모리 장치 및 그것을 포함하는 뉴럴 네트워크 시스템
US10949214B2 (en) * 2019-03-29 2021-03-16 Intel Corporation Technologies for efficient exit from hyper dimensional space in the presence of errors
US11157692B2 (en) * 2019-03-29 2021-10-26 Western Digital Technologies, Inc. Neural networks using data processing units
US11074008B2 (en) * 2019-03-29 2021-07-27 Intel Corporation Technologies for providing stochastic key-value storage
US10777253B1 (en) * 2019-04-16 2020-09-15 International Business Machines Corporation Memory array for processing an N-bit word
US10958272B2 (en) 2019-06-18 2021-03-23 Gsi Technology, Inc. Computational memory cell and processing array device using complementary exclusive or memory cells
US10930341B1 (en) 2019-06-18 2021-02-23 Gsi Technology, Inc. Processing array device that performs one cycle full adder operation and bit line read/write logic features
US10877731B1 (en) 2019-06-18 2020-12-29 Gsi Technology, Inc. Processing array device that performs one cycle full adder operation and bit line read/write logic features
US11409527B2 (en) * 2019-07-15 2022-08-09 Cornell University Parallel processor in associative content addressable memory
US12249189B2 (en) 2019-08-12 2025-03-11 Micron Technology, Inc. Predictive maintenance of automotive lighting
US12061971B2 (en) 2019-08-12 2024-08-13 Micron Technology, Inc. Predictive maintenance of automotive engines
US11042350B2 (en) 2019-08-21 2021-06-22 Micron Technology, Inc. Intelligent audio control in vehicles
US11435946B2 (en) * 2019-09-05 2022-09-06 Micron Technology, Inc. Intelligent wear leveling with reduced write-amplification for data storage devices configured on autonomous vehicles
US12210401B2 (en) 2019-09-05 2025-01-28 Micron Technology, Inc. Temperature based optimization of data storage operations
US11562205B2 (en) * 2019-09-19 2023-01-24 Qualcomm Incorporated Parallel processing of a convolutional layer of a neural network with compute-in-memory array
DE112020004469T5 (de) * 2019-09-20 2022-08-04 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
KR102831057B1 (ko) * 2020-01-20 2025-07-07 삼성전자주식회사 고대역폭 메모리 및 이를 포함하는 시스템
US11226816B2 (en) 2020-02-12 2022-01-18 Samsung Electronics Co., Ltd. Systems and methods for data placement for in-memory-compute
US12159219B2 (en) * 2020-08-19 2024-12-03 Micron Technology, Inc. Neuron using posits
CN116136835B (zh) * 2023-04-19 2023-07-18 中国人民解放军国防科技大学 一种三进二出数值获取方法、装置及介质
CN119993237B (zh) * 2025-04-10 2025-08-05 北京大学 存储模块、存储阵列、存储装置及存内计算编程方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5838165A (en) * 1996-08-21 1998-11-17 Chatter; Mukesh High performance self modifying on-the-fly alterable logic FPGA, architecture and method
JP4388895B2 (ja) * 2002-09-06 2009-12-24 ペーアーツェーテー イクスペーペー テクノロジーズ アクチエンゲゼルシャフト リコンフィギュアラブルなシーケンサ構造
US20110026323A1 (en) * 2009-07-30 2011-02-03 International Business Machines Corporation Gated Diode Memory Cells
US8238173B2 (en) * 2009-07-16 2012-08-07 Zikbit Ltd Using storage cells to perform computation
US8379433B2 (en) * 2010-09-15 2013-02-19 Texas Instruments Incorporated 3T DRAM cell with added capacitance on storage node
JP6106043B2 (ja) * 2013-07-25 2017-03-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US8971124B1 (en) * 2013-08-08 2015-03-03 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9019785B2 (en) * 2013-09-19 2015-04-28 Micron Technology, Inc. Data shifting via a number of isolation devices
US9455020B2 (en) * 2014-06-05 2016-09-27 Micron Technology, Inc. Apparatuses and methods for performing an exclusive or operation using sensing circuitry
US10420200B2 (en) 2014-07-28 2019-09-17 Victor Equipment Company Automated gas cutting system with auxiliary torch
US9954533B2 (en) * 2014-12-16 2018-04-24 Samsung Electronics Co., Ltd. DRAM-based reconfigurable logic
US9697877B2 (en) * 2015-02-05 2017-07-04 The Board Of Trustees Of The University Of Illinois Compute memory

Similar Documents

Publication Publication Date Title
JP2018073402A5 (enExample)
JP7240452B2 (ja) 不揮発性メモリの複数区画の同時アクセスのための装置及び方法
JP2018073452A5 (enExample)
JP2018073413A5 (enExample)
KR102324791B1 (ko) 반도체 메모리 디바이스의 전원 배선
JP3302796B2 (ja) 半導体記憶装置
JP2016123092A5 (enExample)
JP2008532140A5 (enExample)
WO2018022382A3 (en) Variable page size architecture
CN108053855B (zh) 一种基于sdram芯片的矩阵转置方法
JP2016526749A5 (enExample)
JP2010146678A5 (enExample)
US8621135B2 (en) Semiconductor memory device and information data processing apparatus including the same
CN116483773B (zh) 一种基于转置dram单元的存内计算电路和装置
WO2017105775A1 (en) Dram data path sharing via a split local data bus
CN109785882A (zh) 具有虚拟体化架构的sram及包括其的系统和方法
JP2011018427A5 (enExample)
JP2003151280A5 (enExample)
CN115836348A (zh) 存储库和动态随机存取存储器
CN106933756B (zh) 用于可变矩阵的dma快速转置方法及装置
TW200822132A (en) Metal line layout in a memory cell
CN106251892A (zh) 大容量存储器
JP2011090754A (ja) 半導体装置
JP2010010369A5 (enExample)
US11163638B2 (en) Memory device for swapping data and operating method thereof