JP2010146678A5 - - Google Patents
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- JP2010146678A5 JP2010146678A5 JP2008325195A JP2008325195A JP2010146678A5 JP 2010146678 A5 JP2010146678 A5 JP 2010146678A5 JP 2008325195 A JP2008325195 A JP 2008325195A JP 2008325195 A JP2008325195 A JP 2008325195A JP 2010146678 A5 JP2010146678 A5 JP 2010146678A5
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- JP
- Japan
- Prior art keywords
- selected cell
- cell
- memory
- control circuit
- plate line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008325195A JP5185098B2 (ja) | 2008-12-22 | 2008-12-22 | 強誘電体メモリ |
| US12/563,950 US8059445B2 (en) | 2008-12-22 | 2009-09-21 | Ferroelectric memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008325195A JP5185098B2 (ja) | 2008-12-22 | 2008-12-22 | 強誘電体メモリ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010146678A JP2010146678A (ja) | 2010-07-01 |
| JP2010146678A5 true JP2010146678A5 (enExample) | 2011-07-07 |
| JP5185098B2 JP5185098B2 (ja) | 2013-04-17 |
Family
ID=42265809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008325195A Expired - Fee Related JP5185098B2 (ja) | 2008-12-22 | 2008-12-22 | 強誘電体メモリ |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8059445B2 (enExample) |
| JP (1) | JP5185098B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3351596A1 (en) | 2011-06-30 | 2018-07-25 | E. & J. Gallo Winery | Natural crystalline colorant and process for production |
| HK1222447A1 (zh) | 2013-03-15 | 2017-06-30 | E & J Gallo Winery | 使用可调整的调节空气流的乾燥器 |
| US10373665B2 (en) | 2016-03-10 | 2019-08-06 | Micron Technology, Inc. | Parallel access techniques within memory sections through section independence |
| US9697913B1 (en) * | 2016-06-10 | 2017-07-04 | Micron Technology, Inc. | Ferroelectric memory cell recovery |
| US9721639B1 (en) | 2016-06-21 | 2017-08-01 | Micron Technology, Inc. | Memory cell imprint avoidance |
| US11037617B2 (en) | 2018-08-03 | 2021-06-15 | Micron Technology, Inc. | Methods for row hammer mitigation and memory devices and systems employing the same |
| CN112840400B (zh) | 2018-10-09 | 2024-04-05 | 美光科技公司 | 用于行锤击缓解的方法以及采用所述方法的存储器装置和系统 |
| US11221179B2 (en) | 2018-10-26 | 2022-01-11 | E. & J. Gallo Winery | Low profile design air tunnel system and method for providing uniform air flow in a refractance window dryer |
| EP3899709A4 (en) | 2018-12-21 | 2022-09-14 | Micron Technology, Inc. | METHODS FOR ACTIVITY-BASED MEMORY MAINTENANCE OPERATIONS AND STORAGE DEVICES AND SYSTEMS THEREFOR |
| US10817371B2 (en) | 2018-12-31 | 2020-10-27 | Micron Technology, Inc. | Error correction in row hammer mitigation and target row refresh |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3766181B2 (ja) | 1996-06-10 | 2006-04-12 | 株式会社東芝 | 半導体記憶装置とそれを搭載したシステム |
| US5822265A (en) | 1997-07-29 | 1998-10-13 | Rockwell Semiconductor Systems, Inc. | DRAM controller with background refresh |
| JP3720983B2 (ja) | 1998-06-23 | 2005-11-30 | 株式会社東芝 | 強誘電体メモリ |
| JP3319437B2 (ja) * | 1999-06-04 | 2002-09-03 | ソニー株式会社 | 強誘電体メモリおよびそのアクセス方法 |
| KR100597629B1 (ko) * | 2003-12-22 | 2006-07-07 | 삼성전자주식회사 | 강유전체 메모리 장치 및 그에 따른 구동방법 |
| JP4195899B2 (ja) * | 2006-06-16 | 2008-12-17 | 三洋電機株式会社 | 強誘電体メモリ |
-
2008
- 2008-12-22 JP JP2008325195A patent/JP5185098B2/ja not_active Expired - Fee Related
-
2009
- 2009-09-21 US US12/563,950 patent/US8059445B2/en active Active
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