JP2011022998A5 - - Google Patents

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JP2011022998A5
JP2011022998A5 JP2010151680A JP2010151680A JP2011022998A5 JP 2011022998 A5 JP2011022998 A5 JP 2011022998A5 JP 2010151680 A JP2010151680 A JP 2010151680A JP 2010151680 A JP2010151680 A JP 2010151680A JP 2011022998 A5 JP2011022998 A5 JP 2011022998A5
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Japan
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memory
dimm
pcm
module
address
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JP2010151680A
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Japanese (ja)
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JP2011022998A (ja
JP5788151B2 (ja
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Priority claimed from US12/504,029 external-priority patent/US8626997B2/en
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JP2010151680A 2009-07-16 2010-07-02 Ｄｉｍｍにおける相変化メモリ Active JP5788151B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/504,029 US8626997B2 (en) 2009-07-16 2009-07-16 Phase change memory in a dual inline memory module
US12/504,029 2009-07-16

Related Child Applications (1)

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JP2015149065A Division JP2016001485A (ja) 2009-07-16 2015-07-29 相変化メモリモジュールを備えるシステム、及び相変化メモリモジュールを管理する方法

Publications (3)

Publication Number Publication Date
JP2011022998A JP2011022998A (ja) 2011-02-03
JP2011022998A5 true JP2011022998A5 (enExample) 2013-08-08
JP5788151B2 JP5788151B2 (ja) 2015-09-30

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JP2010151680A Active JP5788151B2 (ja) 2009-07-16 2010-07-02 Ｄｉｍｍにおける相変化メモリ
JP2015149065A Pending JP2016001485A (ja) 2009-07-16 2015-07-29 相変化メモリモジュールを備えるシステム、及び相変化メモリモジュールを管理する方法

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JP2015149065A Pending JP2016001485A (ja) 2009-07-16 2015-07-29 相変化メモリモジュールを備えるシステム、及び相変化メモリモジュールを管理する方法

Country Status (6)

Country Link
US (4) US8626997B2 (enExample)
JP (2) JP5788151B2 (enExample)
KR (1) KR101504781B1 (enExample)
CN (1) CN101957726B (enExample)
DE (1) DE102010030742B4 (enExample)
TW (1) TWI506626B (enExample)

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