TWI506626B - 雙列記憶模組中之相變化記憶體 - Google Patents

雙列記憶模組中之相變化記憶體 Download PDF

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Publication number
TWI506626B
TWI506626B TW099121412A TW99121412A TWI506626B TW I506626 B TWI506626 B TW I506626B TW 099121412 A TW099121412 A TW 099121412A TW 99121412 A TW99121412 A TW 99121412A TW I506626 B TWI506626 B TW I506626B
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TW
Taiwan
Prior art keywords
memory
pcm
modules
dimm
dram
Prior art date
Application number
TW099121412A
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English (en)
Chinese (zh)
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TW201115577A (en
Inventor
Shekoufeh Qawami
E Jared Hulbert
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Micron Technology Inc
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Publication date
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Publication of TW201115577A publication Critical patent/TW201115577A/zh
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Publication of TWI506626B publication Critical patent/TWI506626B/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0804—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40607—Refresh operations in memory devices with an internal cache or data buffer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2024—Rewritable memory not requiring erasing, e.g. resistive or ferroelectric RAM
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/30—Providing cache or TLB in specific location of a processing system
    • G06F2212/304—In main memory subsystem
    • G06F2212/3042—In main memory subsystem being part of a memory device, e.g. cache DRAM
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/60—Details of cache memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Memory System (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Hardware Redundancy (AREA)
TW099121412A 2009-07-16 2010-06-30 雙列記憶模組中之相變化記憶體 TWI506626B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/504,029 US8626997B2 (en) 2009-07-16 2009-07-16 Phase change memory in a dual inline memory module

Publications (2)

Publication Number Publication Date
TW201115577A TW201115577A (en) 2011-05-01
TWI506626B true TWI506626B (zh) 2015-11-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW099121412A TWI506626B (zh) 2009-07-16 2010-06-30 雙列記憶模組中之相變化記憶體

Country Status (6)

Country Link
US (4) US8626997B2 (enExample)
JP (2) JP5788151B2 (enExample)
KR (1) KR101504781B1 (enExample)
CN (1) CN101957726B (enExample)
DE (1) DE102010030742B4 (enExample)
TW (1) TWI506626B (enExample)

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KR102408613B1 (ko) * 2015-08-27 2022-06-15 삼성전자주식회사 메모리 모듈의 동작 방법, 및 메모리 모듈을 제어하는 프로세서의 동작 방법, 및 사용자 시스템
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CN106328183B (zh) * 2016-09-23 2018-08-31 山东师范大学 一种改进的存储器系统及方法
US10915453B2 (en) 2016-12-29 2021-02-09 Intel Corporation Multi level system memory having different caching structures and memory controller that supports concurrent look-up into the different caching structures
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KR20180127707A (ko) * 2017-05-22 2018-11-30 에스케이하이닉스 주식회사 메모리 모듈 및 이의 동작 방법
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US10860244B2 (en) 2017-12-26 2020-12-08 Intel Corporation Method and apparatus for multi-level memory early page demotion
US10990463B2 (en) 2018-03-27 2021-04-27 Samsung Electronics Co., Ltd. Semiconductor memory module and memory system including the same
KR102505913B1 (ko) 2018-04-04 2023-03-07 삼성전자주식회사 메모리 모듈 및 메모리 모듈을 포함하는 메모리 시스템
US10734756B2 (en) 2018-08-10 2020-08-04 Crystal Group Inc. DIMM/expansion card retention method for highly kinematic environments
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Also Published As

Publication number Publication date
US10437722B2 (en) 2019-10-08
US11494302B2 (en) 2022-11-08
JP2016001485A (ja) 2016-01-07
JP5788151B2 (ja) 2015-09-30
KR101504781B1 (ko) 2015-03-20
US20140095781A1 (en) 2014-04-03
CN101957726B (zh) 2015-09-02
US20200019501A1 (en) 2020-01-16
DE102010030742B4 (de) 2018-04-05
US20110016268A1 (en) 2011-01-20
US9576662B2 (en) 2017-02-21
JP2011022998A (ja) 2011-02-03
KR20110007571A (ko) 2011-01-24
US8626997B2 (en) 2014-01-07
CN101957726A (zh) 2011-01-26
TW201115577A (en) 2011-05-01
US20170177478A1 (en) 2017-06-22
DE102010030742A1 (de) 2011-02-17

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