JP5185098B2 - 強誘電体メモリ - Google Patents

強誘電体メモリ Download PDF

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Publication number
JP5185098B2
JP5185098B2 JP2008325195A JP2008325195A JP5185098B2 JP 5185098 B2 JP5185098 B2 JP 5185098B2 JP 2008325195 A JP2008325195 A JP 2008325195A JP 2008325195 A JP2008325195 A JP 2008325195A JP 5185098 B2 JP5185098 B2 JP 5185098B2
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JP
Japan
Prior art keywords
cell
selected cell
memory
refresh
plate line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008325195A
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English (en)
Japanese (ja)
Other versions
JP2010146678A (ja
JP2010146678A5 (enExample
Inventor
本 大 輔 橋
島 大三郎 高
賀 秀 裕 滋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2008325195A priority Critical patent/JP5185098B2/ja
Priority to US12/563,950 priority patent/US8059445B2/en
Publication of JP2010146678A publication Critical patent/JP2010146678A/ja
Publication of JP2010146678A5 publication Critical patent/JP2010146678A5/ja
Application granted granted Critical
Publication of JP5185098B2 publication Critical patent/JP5185098B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
JP2008325195A 2008-12-22 2008-12-22 強誘電体メモリ Expired - Fee Related JP5185098B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008325195A JP5185098B2 (ja) 2008-12-22 2008-12-22 強誘電体メモリ
US12/563,950 US8059445B2 (en) 2008-12-22 2009-09-21 Ferroelectric memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008325195A JP5185098B2 (ja) 2008-12-22 2008-12-22 強誘電体メモリ

Publications (3)

Publication Number Publication Date
JP2010146678A JP2010146678A (ja) 2010-07-01
JP2010146678A5 JP2010146678A5 (enExample) 2011-07-07
JP5185098B2 true JP5185098B2 (ja) 2013-04-17

Family

ID=42265809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008325195A Expired - Fee Related JP5185098B2 (ja) 2008-12-22 2008-12-22 強誘電体メモリ

Country Status (2)

Country Link
US (1) US8059445B2 (enExample)
JP (1) JP5185098B2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10214630B2 (en) 2011-06-30 2019-02-26 E. & J. Gallo Winery Natural crystalline colorant and process for production
US11740016B2 (en) 2018-10-26 2023-08-29 E. & J. Gallo Winery Low profile design air tunnel system and method for providing uniform air flow in a refractance window dryer
US12492865B2 (en) 2013-03-15 2025-12-09 E. & J. Gallo Winery Multi-chamber dryer using adjustable conditioned air flow

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10373665B2 (en) 2016-03-10 2019-08-06 Micron Technology, Inc. Parallel access techniques within memory sections through section independence
US9697913B1 (en) * 2016-06-10 2017-07-04 Micron Technology, Inc. Ferroelectric memory cell recovery
US9721639B1 (en) 2016-06-21 2017-08-01 Micron Technology, Inc. Memory cell imprint avoidance
CN112534502B (zh) 2018-08-03 2024-04-09 美光科技公司 用于行锤击缓解的方法及采用所述方法的存储器装置及系统
CN118197372A (zh) 2018-10-09 2024-06-14 美光科技公司 用于行锤击缓解的方法以及采用所述方法的存储器装置和系统
CN118860284A (zh) 2018-12-21 2024-10-29 美光科技公司 用于基于活动的存储器维护操作的方法及采用所述方法的存储器装置及系统
US10817371B2 (en) 2018-12-31 2020-10-27 Micron Technology, Inc. Error correction in row hammer mitigation and target row refresh

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3766181B2 (ja) 1996-06-10 2006-04-12 株式会社東芝 半導体記憶装置とそれを搭載したシステム
US5822265A (en) 1997-07-29 1998-10-13 Rockwell Semiconductor Systems, Inc. DRAM controller with background refresh
JP3720983B2 (ja) 1998-06-23 2005-11-30 株式会社東芝 強誘電体メモリ
JP3319437B2 (ja) * 1999-06-04 2002-09-03 ソニー株式会社 強誘電体メモリおよびそのアクセス方法
KR100597629B1 (ko) * 2003-12-22 2006-07-07 삼성전자주식회사 강유전체 메모리 장치 및 그에 따른 구동방법
JP4195899B2 (ja) * 2006-06-16 2008-12-17 三洋電機株式会社 強誘電体メモリ

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10214630B2 (en) 2011-06-30 2019-02-26 E. & J. Gallo Winery Natural crystalline colorant and process for production
US10640628B2 (en) 2011-06-30 2020-05-05 E. & J. Gallo Winery Natural crystalline colorant and process for production
US10982070B2 (en) 2011-06-30 2021-04-20 E. & J. Gallo Winery Natural crystalline colorant and process for production
US11578187B2 (en) 2011-06-30 2023-02-14 E. & J. Gallo Winery Natural crystalline colorant and process for production
US11753525B2 (en) 2011-06-30 2023-09-12 E. & J. Gallo Winery Natural crystalline colorant and process for production
US11827768B2 (en) 2011-06-30 2023-11-28 E. & J. Gallo Winery Natural crystalline colorant and process for production
US12129356B2 (en) 2011-06-30 2024-10-29 E. &J. Gallo Winery Natural crystalline colorant and process for production
US12492865B2 (en) 2013-03-15 2025-12-09 E. & J. Gallo Winery Multi-chamber dryer using adjustable conditioned air flow
US11740016B2 (en) 2018-10-26 2023-08-29 E. & J. Gallo Winery Low profile design air tunnel system and method for providing uniform air flow in a refractance window dryer
US12181219B2 (en) 2018-10-26 2024-12-31 E. &J. Gallo Winery Low profile design air tunnel system and method for providing uniform air flow in a Refractance window dryer

Also Published As

Publication number Publication date
US8059445B2 (en) 2011-11-15
US20100157650A1 (en) 2010-06-24
JP2010146678A (ja) 2010-07-01

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