JP2005182978A5 - - Google Patents

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Publication number
JP2005182978A5
JP2005182978A5 JP2004186459A JP2004186459A JP2005182978A5 JP 2005182978 A5 JP2005182978 A5 JP 2005182978A5 JP 2004186459 A JP2004186459 A JP 2004186459A JP 2004186459 A JP2004186459 A JP 2004186459A JP 2005182978 A5 JP2005182978 A5 JP 2005182978A5
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JP
Japan
Prior art keywords
access transistor
ferroelectric
memory device
memory cell
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004186459A
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English (en)
Japanese (ja)
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JP2005182978A (ja
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Publication date
Priority claimed from KR1020030094383A external-priority patent/KR100597629B1/ko
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Publication of JP2005182978A publication Critical patent/JP2005182978A/ja
Publication of JP2005182978A5 publication Critical patent/JP2005182978A5/ja
Pending legal-status Critical Current

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JP2004186459A 2003-12-22 2004-06-24 強誘電体メモリ装置及びその駆動方法 Pending JP2005182978A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030094383A KR100597629B1 (ko) 2003-12-22 2003-12-22 강유전체 메모리 장치 및 그에 따른 구동방법

Publications (2)

Publication Number Publication Date
JP2005182978A JP2005182978A (ja) 2005-07-07
JP2005182978A5 true JP2005182978A5 (enExample) 2007-06-28

Family

ID=34675894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004186459A Pending JP2005182978A (ja) 2003-12-22 2004-06-24 強誘電体メモリ装置及びその駆動方法

Country Status (4)

Country Link
US (1) US7426130B2 (enExample)
JP (1) JP2005182978A (enExample)
KR (1) KR100597629B1 (enExample)
CN (1) CN1637929B (enExample)

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CN100390901C (zh) * 2006-04-21 2008-05-28 北京大学深圳研究生院 铁电动态随机存储器单管单元阵列的编程方法
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JP5185098B2 (ja) * 2008-12-22 2013-04-17 株式会社東芝 強誘電体メモリ
US8724367B2 (en) * 2010-12-30 2014-05-13 Texas Instruments Incorporated Method and apparatus pertaining to a ferroelectric random access memory
US8717800B2 (en) * 2010-12-30 2014-05-06 Texas Instruments Incorporated Method and apparatus pertaining to a ferroelectric random access memory
US9767879B2 (en) * 2015-02-17 2017-09-19 Texas Instruments Incorporated Setting of reference voltage for data sensing in ferroelectric memories
US10373665B2 (en) 2016-03-10 2019-08-06 Micron Technology, Inc. Parallel access techniques within memory sections through section independence
US10636471B2 (en) 2016-04-20 2020-04-28 Micron Technology, Inc. Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays
KR102506791B1 (ko) * 2016-09-05 2023-03-08 에스케이하이닉스 주식회사 파워 분배 네트워크 개선을 위한 반도체 장치
US10504909B2 (en) * 2017-05-10 2019-12-10 Micron Technology, Inc. Plate node configurations and operations for a memory array
US10074422B1 (en) * 2017-06-13 2018-09-11 Cypress Semiconductor Corporation 2T1C ferro-electric random access memory cell
CN109087674A (zh) * 2017-06-14 2018-12-25 萨摩亚商费洛储存科技股份有限公司 铁电内存及其数据读取、写入与制造方法和电容结构
US10679687B2 (en) * 2017-08-22 2020-06-09 Micron Technology, Inc. Memory cells and arrays of memory cells
CN107946461B (zh) * 2017-11-17 2021-10-19 南方科技大学 一种铁电阻变存储器及其写入方法、读取方法和制备方法
US10529410B2 (en) 2017-12-18 2020-01-07 Micron Technology, Inc. Techniques for accessing an array of memory cells to reduce parasitic coupling
US10818334B2 (en) * 2018-06-26 2020-10-27 AUCMOS Technologies USA, Inc. Ferroelectric memory array with variable plate-line architecture
US11232838B2 (en) * 2020-01-24 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric FET-based content addressable memory
US11309034B2 (en) * 2020-07-15 2022-04-19 Ferroelectric Memory Gmbh Memory cell arrangement and methods thereof
US11688457B2 (en) * 2020-12-26 2023-06-27 International Business Machines Corporation Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing
US20220328500A1 (en) * 2021-04-09 2022-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. High Density 3 Dimensional Gate All Around Memory
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11705185B2 (en) * 2021-06-29 2023-07-18 Micron Technology, Inc. Apparatus for differential memory cells
US11735249B2 (en) * 2021-06-29 2023-08-22 Micron Technology, Inc. Sensing techniques for differential memory cells
CN114171081A (zh) * 2021-11-17 2022-03-11 北京大学 一种嵌入式半导体随机存取存储器结构及其控制方法
US11482270B1 (en) 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US11749329B1 (en) * 2022-05-20 2023-09-05 Micron Technology, Inc. Off-state word line voltage control for fixed plate voltage operation
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12300297B1 (en) 2022-08-05 2025-05-13 Kepler Computing Inc. Memory array with buried or backside word-line
CN117636936A (zh) * 2022-08-17 2024-03-01 华为技术有限公司 铁电存储器和终端
US12062584B1 (en) 2022-10-28 2024-08-13 Kepler Computing Inc. Iterative method of multilayer stack development for device applications
US11741428B1 (en) 2022-12-23 2023-08-29 Kepler Computing Inc. Iterative monetization of process development of non-linear polar material and devices
US12347476B1 (en) 2022-12-27 2025-07-01 Kepler Computing Inc. Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell
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