JP2006054263A - 固体撮像装置およびその製造方法 - Google Patents
固体撮像装置およびその製造方法 Download PDFInfo
- Publication number
- JP2006054263A JP2006054263A JP2004233760A JP2004233760A JP2006054263A JP 2006054263 A JP2006054263 A JP 2006054263A JP 2004233760 A JP2004233760 A JP 2004233760A JP 2004233760 A JP2004233760 A JP 2004233760A JP 2006054263 A JP2006054263 A JP 2006054263A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon oxide
- insulating film
- state imaging
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 76
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 64
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000002834 transmittance Methods 0.000 claims abstract description 35
- 230000000694 effects Effects 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 69
- 238000009825 accumulation Methods 0.000 abstract description 14
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 18
- 230000035945 sensitivity Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
【解決手段】受光部4が形成された半導体基板1の裏面には、酸化シリコン膜8と、窒化シリコン膜9が積層されている。酸化シリコン膜8と窒化シリコン膜9の界面あるいは窒化シリコン膜9の膜中には、負電荷(電子)が蓄積されている。この負電荷により、半導体基板1において、裏面付近に正孔蓄積層10が誘起される。酸化シリコン膜8は15nm〜40nmの厚さであり、窒化シリコン膜9は20nm〜50nmの厚さである。酸化シリコン膜8と窒化シリコン膜9の積層膜を用いた光の多重干渉効果により、酸化シリコン膜8を単独で用いた場合に比べて、入射光に対する透過率が向上する。
【選択図】図1
Description
また、第1絶縁膜上には第2絶縁膜が形成され、両者の膜厚が調整されていることから、第1絶縁膜のみを用いた場合と比べて、光の多重干渉効果により入射光に対して高い透過率が得られる。
本実施形態では、例えばp型シリコンからなる半導体基板1を用いる。半導体基板1の厚さは、固体撮像装置の仕様にもよるが、可視光用の場合には4〜6μmであり、近赤外線用では6〜10μmとなる。
図5(a)は、窒化シリコン膜9がない場合における半導体基板1の裏面付近のエネルギーバンドを示す図である。図5(a)に示すように、通常、半導体基板1上に酸化シリコン8を堆積させると、酸化シリコン膜8中、あるいは半導体基板1と酸化シリコン膜8との界面にはプラスの電荷が生じやすい。これは、酸化シリコンのみならず、他の絶縁膜にも当てはまる。この結果、半導体基板1の裏面付近のポテンシャルが引き上げられ、電位の井戸が生じる。半導体基板1の裏面付近に、電位の井戸が形成されてしまうと、光電変換によって生じた電子がこの裏面付近にも蓄積されてしまって感度に寄与しないことや、界面からの少数キャリア(p型半導体基板1の場合には電子)の熱的発生が増加し暗電流が増加し、その結果撮像素子としてのS/N比が減少してしまう。
図6(a)に示すように、比較例として半導体基板1の第2面側に2μmの膜厚の酸化シリコン膜8のみを形成した。図6(a)に示す構造において、入射光Lに対する透過光TLの割合(透過率)と、反射光RLの割合(反射率)を測定した結果を図6(b)に示す。図6(b)では、T1が透過率を示すグラフであり、R1が反射率を示すグラフである。
信号電荷として正孔を用いる場合には、酸化シリコン膜8と窒化シリコン膜9との界面および窒化シリコン膜9の膜中に正孔を蓄積させ、半導体基板1の裏面に電子蓄積層を誘起させればよい。また、信号電荷として正孔を用いる場合には、各種の半導体領域の極性を逆にすればよい。さらに、本実施形態では、第1絶縁膜として酸化シリコン膜8を用い、第2絶縁膜として窒化シリコン膜9を用いる例について説明したが、他の絶縁膜を使用したり、不純物を注入してもよい。他の絶縁膜を採用する場合には、相対的に、第2絶縁膜の方が、第1絶縁膜に比べて屈折率の高くなるようにすればよい。
その他、本発明の要旨を逸脱しない範囲で、種々の変更が可能である。
Claims (6)
- 基板の第1面側に画素回路が形成され、第2面側から光が入射する固体撮像装置であって、
前記基板に形成され、入射光量に応じて信号電荷を生成して当該信号電荷を蓄積する受光部と、
前記基板の第2面上に形成された透明性の第1絶縁膜と、
前記第1絶縁膜上に形成され、前記第1絶縁膜との界面あるいは膜中に前記信号電荷と同じ極性の電荷を保持する透明性の第2絶縁膜とを有し、
前記第1絶縁膜のみを用いた場合と比べて、光の多重干渉効果により入射光に対して高い透過率が得られるように、前記第1絶縁膜および前記第2絶縁膜の膜厚が規定された
固体撮像装置。 - 前記第2絶縁膜上に、前記第1絶縁膜との界面あるいは前記第2絶縁膜中に保持された電荷が外部へ拡散することを防止する保護膜が形成された
請求項1記載の固体撮像装置。 - 前記第1絶縁膜は酸化シリコンを含む
請求項1記載の固体撮像装置。 - 前記第2絶縁膜は窒化シリコンを含む
請求項1記載の固体撮像装置。 - 前記第1絶縁膜は酸化シリコンを含み、前記第2絶縁膜は窒化シリコンを含む
請求項1記載の固体撮像装置。 - 前記酸化シリコン膜の膜厚が15nm以上40nm以下の範囲であり、前記窒化シリコン膜の膜厚が20nm以上50nm以下の範囲である
請求項5記載の固体撮像装置。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004233760A JP4779320B2 (ja) | 2004-08-10 | 2004-08-10 | 固体撮像装置およびその製造方法 |
US11/181,748 US7737520B2 (en) | 2004-08-10 | 2005-07-15 | Solid-state imaging device and camera implementing the same |
TW094124370A TWI270201B (en) | 2004-08-10 | 2005-07-19 | Solid-state imaging device, method of producing the same, and camera |
KR1020050067980A KR101103658B1 (ko) | 2004-08-10 | 2005-07-26 | 고체 촬상소자 및 제작방법과 카메라 |
CNB2005100926152A CN100433346C (zh) | 2004-08-10 | 2005-08-10 | 固态成像装置及其制造方法以及照相机 |
US12/662,982 US7998778B2 (en) | 2004-08-10 | 2010-05-14 | Method of producing a solid-state imaging device |
US12/815,879 US8008108B2 (en) | 2004-08-10 | 2010-06-15 | Solid-state imaging device, method of producing the same, and camera |
US13/137,210 US8349638B2 (en) | 2004-08-10 | 2011-07-28 | Method of manufacturing back illuminated solid-state imaging device with improved transmittance of visible light |
US13/676,411 US8669634B2 (en) | 2004-08-10 | 2012-11-14 | Solid-state imaging device with a hole storage layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004233760A JP4779320B2 (ja) | 2004-08-10 | 2004-08-10 | 固体撮像装置およびその製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009188750A Division JP5136524B2 (ja) | 2009-08-17 | 2009-08-17 | 固体撮像装置およびその製造方法 |
JP2009298795A Division JP5110075B2 (ja) | 2009-12-28 | 2009-12-28 | 裏面照射型固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006054263A true JP2006054263A (ja) | 2006-02-23 |
JP4779320B2 JP4779320B2 (ja) | 2011-09-28 |
Family
ID=35799598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004233760A Expired - Fee Related JP4779320B2 (ja) | 2004-08-10 | 2004-08-10 | 固体撮像装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (5) | US7737520B2 (ja) |
JP (1) | JP4779320B2 (ja) |
KR (1) | KR101103658B1 (ja) |
CN (1) | CN100433346C (ja) |
TW (1) | TWI270201B (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008103368A (ja) * | 2006-09-20 | 2008-05-01 | Fujifilm Corp | 裏面照射型撮像素子及びこれを備えた撮像装置及び裏面照射型撮像素子の製造方法 |
JP2008227254A (ja) * | 2007-03-14 | 2008-09-25 | Fujifilm Corp | Ccd固体撮像素子 |
JP2009088430A (ja) * | 2007-10-03 | 2009-04-23 | Sony Corp | 固体撮像装置とその製造方法および撮像装置 |
JP2009176951A (ja) * | 2008-01-24 | 2009-08-06 | Sony Corp | 固体撮像素子 |
US8030608B2 (en) | 2006-09-20 | 2011-10-04 | Fujifilm Corporation | Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device |
EP2432019A1 (en) | 2010-09-15 | 2012-03-21 | Sony Corporation | Imaging device and imaging apparatus |
US8349638B2 (en) | 2004-08-10 | 2013-01-08 | Sony Corporation | Method of manufacturing back illuminated solid-state imaging device with improved transmittance of visible light |
US8410418B2 (en) | 2007-05-07 | 2013-04-02 | Sony Corporation | Solid-state imaging device, method for manufacturing the same, and imaging apparatus |
JP2013518414A (ja) * | 2010-01-21 | 2013-05-20 | ローパー サイエンティフィック インコーポレイテッド | 固体裏面照射型光子センサおよびその製造方法 |
JP2014160876A (ja) * | 2006-02-24 | 2014-09-04 | Sony Corp | 固体撮像装置の製造方法、及び、カメラ |
US9000493B2 (en) | 2006-02-24 | 2015-04-07 | Sony Corporation | Solid-state imaging device, method for producing same, and camera |
WO2015141356A1 (ja) * | 2014-03-18 | 2015-09-24 | シャープ株式会社 | 光電変換素子およびそれを用いた光電変換装置 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007081137A (ja) * | 2005-09-14 | 2007-03-29 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
US8212901B2 (en) * | 2008-02-08 | 2012-07-03 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with reduced leakage photodiode |
JP5402040B2 (ja) * | 2009-02-06 | 2014-01-29 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びに撮像装置、並びに半導体装置及びその製造方法、並びに半導体基板 |
KR101585615B1 (ko) * | 2009-02-26 | 2016-01-14 | 삼성전자주식회사 | 반도체 장치 |
JP2010238848A (ja) * | 2009-03-31 | 2010-10-21 | Sony Corp | 固体撮像装置および電子機器 |
JP5306141B2 (ja) * | 2009-10-19 | 2013-10-02 | 株式会社東芝 | 固体撮像装置 |
JP5110075B2 (ja) * | 2009-12-28 | 2012-12-26 | ソニー株式会社 | 裏面照射型固体撮像装置の製造方法 |
FR2980304A1 (fr) * | 2011-09-20 | 2013-03-22 | St Microelectronics Crolles 2 | Procede de fabrication d'un capteur d'image eclaire par la face arriere avec couche antireflet |
US9112090B2 (en) | 2012-01-31 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | UV radiation recovery of image sensor |
US9659981B2 (en) | 2012-04-25 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside illuminated image sensor with negatively charged layer |
JP2014086553A (ja) * | 2012-10-23 | 2014-05-12 | Toshiba Corp | 固体撮像装置および固体撮像装置の製造方法 |
KR102242580B1 (ko) | 2014-04-23 | 2021-04-22 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
KR102563588B1 (ko) | 2016-08-16 | 2023-08-03 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
KR20180077395A (ko) | 2016-12-28 | 2018-07-09 | 삼성전자주식회사 | 이미지 센서 |
CN106935605A (zh) * | 2017-03-10 | 2017-07-07 | 豪威科技(上海)有限公司 | Cmos图像传感器及其形成方法 |
CN112436026A (zh) * | 2020-12-06 | 2021-03-02 | 联合微电子中心有限责任公司 | 减少背照式图像传感器暗电流的方法及其传感器 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04154283A (ja) * | 1990-10-17 | 1992-05-27 | Sony Corp | 固体撮像装置及びその駆動方法 |
JPH04343472A (ja) * | 1991-05-21 | 1992-11-30 | Nec Corp | 固体撮像素子 |
JPH07211879A (ja) * | 1994-01-27 | 1995-08-11 | Fujitsu Ltd | 固体撮像素子 |
JPH08241977A (ja) * | 1995-03-03 | 1996-09-17 | Hamamatsu Photonics Kk | 半導体装置の製造方法 |
JPH10150184A (ja) * | 1996-11-15 | 1998-06-02 | Nec Corp | 電荷転送装置およびその製造方法 |
JP2002141940A (ja) * | 2000-11-02 | 2002-05-17 | Nec Eng Ltd | パケット通信装置 |
JP2003031785A (ja) * | 2001-07-11 | 2003-01-31 | Sony Corp | X−yアドレス型固体撮像素子およびその製造方法 |
JP2003051589A (ja) * | 2001-08-07 | 2003-02-21 | Sharp Corp | 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4040092A (en) * | 1976-08-04 | 1977-08-02 | Rca Corporation | Smear reduction in ccd imagers |
US4277792A (en) * | 1978-02-17 | 1981-07-07 | Texas Instruments Incorporated | Piggyback readout stratified channel CCD |
JPS6065565A (ja) | 1983-09-20 | 1985-04-15 | Toshiba Corp | 固体撮像素子 |
US4656519A (en) * | 1985-10-04 | 1987-04-07 | Rca Corporation | Back-illuminated CCD imagers of interline transfer type |
US5311530A (en) * | 1990-09-14 | 1994-05-10 | Advanced Optoelectronics, Inc. | Semiconductor laser array |
JP3079567B2 (ja) | 1990-11-30 | 2000-08-21 | ソニー株式会社 | 固体撮像装置 |
JP3200856B2 (ja) * | 1991-02-12 | 2001-08-20 | ソニー株式会社 | 固体撮像装置 |
JPH06268183A (ja) | 1993-03-15 | 1994-09-22 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH06350068A (ja) * | 1993-06-03 | 1994-12-22 | Hamamatsu Photonics Kk | 半導体エネルギー線検出器の製造方法 |
JP3677970B2 (ja) * | 1997-10-16 | 2005-08-03 | ソニー株式会社 | 固体撮像素子とその製造方法 |
JP3204216B2 (ja) * | 1998-06-24 | 2001-09-04 | 日本電気株式会社 | 固体撮像装置およびその製造方法 |
JP3782297B2 (ja) | 2000-03-28 | 2006-06-07 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
FR2815528B1 (fr) * | 2000-10-19 | 2003-03-28 | Hill Rom Sas | Lit a elements de barrieres articules |
JP2002151673A (ja) | 2000-11-07 | 2002-05-24 | Sony Corp | 固体撮像素子 |
JP2002151729A (ja) | 2000-11-13 | 2002-05-24 | Sony Corp | 半導体装置及びその製造方法 |
JP2002208685A (ja) * | 2001-01-11 | 2002-07-26 | Sony Corp | 固体撮像素子 |
JP4235787B2 (ja) | 2001-10-03 | 2009-03-11 | ソニー株式会社 | 固体撮像素子の製造方法 |
JP2004221487A (ja) * | 2003-01-17 | 2004-08-05 | Sharp Corp | 半導体装置の製造方法及び半導体装置 |
KR100688497B1 (ko) * | 2004-06-28 | 2007-03-02 | 삼성전자주식회사 | 이미지 센서 및 그 제조방법 |
JP4779320B2 (ja) | 2004-08-10 | 2011-09-28 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
-
2004
- 2004-08-10 JP JP2004233760A patent/JP4779320B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-15 US US11/181,748 patent/US7737520B2/en active Active
- 2005-07-19 TW TW094124370A patent/TWI270201B/zh active
- 2005-07-26 KR KR1020050067980A patent/KR101103658B1/ko active IP Right Grant
- 2005-08-10 CN CNB2005100926152A patent/CN100433346C/zh active Active
-
2010
- 2010-05-14 US US12/662,982 patent/US7998778B2/en not_active Expired - Fee Related
- 2010-06-15 US US12/815,879 patent/US8008108B2/en not_active Expired - Fee Related
-
2011
- 2011-07-28 US US13/137,210 patent/US8349638B2/en active Active
-
2012
- 2012-11-14 US US13/676,411 patent/US8669634B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04154283A (ja) * | 1990-10-17 | 1992-05-27 | Sony Corp | 固体撮像装置及びその駆動方法 |
JPH04343472A (ja) * | 1991-05-21 | 1992-11-30 | Nec Corp | 固体撮像素子 |
JPH07211879A (ja) * | 1994-01-27 | 1995-08-11 | Fujitsu Ltd | 固体撮像素子 |
JPH08241977A (ja) * | 1995-03-03 | 1996-09-17 | Hamamatsu Photonics Kk | 半導体装置の製造方法 |
JPH10150184A (ja) * | 1996-11-15 | 1998-06-02 | Nec Corp | 電荷転送装置およびその製造方法 |
JP2002141940A (ja) * | 2000-11-02 | 2002-05-17 | Nec Eng Ltd | パケット通信装置 |
JP2003031785A (ja) * | 2001-07-11 | 2003-01-31 | Sony Corp | X−yアドレス型固体撮像素子およびその製造方法 |
JP2003051589A (ja) * | 2001-08-07 | 2003-02-21 | Sharp Corp | 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8349638B2 (en) | 2004-08-10 | 2013-01-08 | Sony Corporation | Method of manufacturing back illuminated solid-state imaging device with improved transmittance of visible light |
US8669634B2 (en) | 2004-08-10 | 2014-03-11 | Sony Corporation | Solid-state imaging device with a hole storage layer |
US9000493B2 (en) | 2006-02-24 | 2015-04-07 | Sony Corporation | Solid-state imaging device, method for producing same, and camera |
JP2014160876A (ja) * | 2006-02-24 | 2014-09-04 | Sony Corp | 固体撮像装置の製造方法、及び、カメラ |
JP4649390B2 (ja) * | 2006-09-20 | 2011-03-09 | 富士フイルム株式会社 | 裏面照射型撮像素子の製造方法 |
US8030608B2 (en) | 2006-09-20 | 2011-10-04 | Fujifilm Corporation | Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device |
JP2008103368A (ja) * | 2006-09-20 | 2008-05-01 | Fujifilm Corp | 裏面照射型撮像素子及びこれを備えた撮像装置及び裏面照射型撮像素子の製造方法 |
JP2008227254A (ja) * | 2007-03-14 | 2008-09-25 | Fujifilm Corp | Ccd固体撮像素子 |
US8410418B2 (en) | 2007-05-07 | 2013-04-02 | Sony Corporation | Solid-state imaging device, method for manufacturing the same, and imaging apparatus |
US8343793B2 (en) | 2007-10-03 | 2013-01-01 | Sony Corporation | Solid state imaging device, method of manufacturing the same, and imaging apparatus |
US8765515B2 (en) | 2007-10-03 | 2014-07-01 | Sony Corporation | Solid state imaging device, method of manufacturing the same, and imaging apparatus |
JP2009088430A (ja) * | 2007-10-03 | 2009-04-23 | Sony Corp | 固体撮像装置とその製造方法および撮像装置 |
KR101530714B1 (ko) * | 2007-10-03 | 2015-06-22 | 소니 주식회사 | 고체 촬상 소자 및 그 제조 방법, 그리고 촬상 장치 |
JP2009176951A (ja) * | 2008-01-24 | 2009-08-06 | Sony Corp | 固体撮像素子 |
JP2013518414A (ja) * | 2010-01-21 | 2013-05-20 | ローパー サイエンティフィック インコーポレイテッド | 固体裏面照射型光子センサおよびその製造方法 |
EP2432019A1 (en) | 2010-09-15 | 2012-03-21 | Sony Corporation | Imaging device and imaging apparatus |
WO2015141356A1 (ja) * | 2014-03-18 | 2015-09-24 | シャープ株式会社 | 光電変換素子およびそれを用いた光電変換装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4779320B2 (ja) | 2011-09-28 |
US20110287569A1 (en) | 2011-11-24 |
TWI270201B (en) | 2007-01-01 |
KR20060046795A (ko) | 2006-05-17 |
US20130109129A1 (en) | 2013-05-02 |
US20060033827A1 (en) | 2006-02-16 |
US7998778B2 (en) | 2011-08-16 |
US7737520B2 (en) | 2010-06-15 |
CN1734777A (zh) | 2006-02-15 |
US8669634B2 (en) | 2014-03-11 |
US20100227427A1 (en) | 2010-09-09 |
CN100433346C (zh) | 2008-11-12 |
KR101103658B1 (ko) | 2012-01-11 |
TW200616214A (en) | 2006-05-16 |
US8008108B2 (en) | 2011-08-30 |
US8349638B2 (en) | 2013-01-08 |
US20110065225A1 (en) | 2011-03-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4779320B2 (ja) | 固体撮像装置およびその製造方法 | |
US11024660B2 (en) | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus | |
US8008106B2 (en) | Semiconductor imaging device and fabrication process thereof | |
JP4742057B2 (ja) | 裏面照射型固体撮像素子 | |
JP3702854B2 (ja) | 固体撮像素子 | |
TW201143073A (en) | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus | |
JP2009182223A (ja) | 裏面照射型固体撮像素子 | |
JP2011054741A (ja) | 裏面照射型固体撮像装置 | |
JP2021044571A (ja) | 撮像素子 | |
WO2011070693A1 (ja) | 固体撮像装置 | |
JP5136081B2 (ja) | 固体撮像素子 | |
JP2011124946A (ja) | 固体撮像素子およびこれを備えたカメラ | |
JP4751803B2 (ja) | 裏面照射型撮像素子 | |
JP3695748B2 (ja) | 固体撮像装置並びにその製造方法および駆動方法 | |
US20050158907A1 (en) | Image sensor device and method of fabricating the same | |
JP4247235B2 (ja) | 固体撮像装置およびその駆動方法 | |
JP5110075B2 (ja) | 裏面照射型固体撮像装置の製造方法 | |
JP5136524B2 (ja) | 固体撮像装置およびその製造方法 | |
JP2007208052A (ja) | 固体撮像素子 | |
JP4247205B2 (ja) | 固体撮像装置の駆動方法 | |
JP2005026717A (ja) | 固体撮像素子 | |
JP2001345437A (ja) | 固体撮像素子及びその製造方法 | |
JPH10116975A (ja) | 固体撮像装置及び固体撮像装置のオーバーフローバリア形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080709 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090616 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090817 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091027 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100223 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100426 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110301 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110502 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110607 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110620 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140715 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140715 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |