JP2013518414A - 固体裏面照射型光子センサおよびその製造方法 - Google Patents
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- H01L27/144—Devices controlled by radiation
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- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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Abstract
Description
上記に鑑み、広いスペクトル範囲に亘り高いQEで妥協の無いNIR画像化を行う裏面照射型撮像センサ、より具体的には、感光裏面の反射率を低下するための反射防止構造を採用した裏面照射型固体撮像センサであって、NIRにおける光の干渉効果(エタロニング)を軽減すると共に広いスペクトル範囲(UV−NIR)に亘り高い素子QEが得られるセンサが求められている。
Claims (21)
- 感光Siエピタキシャル裏面と、
前記感光Siエピタキシャル裏面の頂部に、耐火金属酸化物またはフッ化物誘電体の層状連続体と
を備える裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサにおいて、
前記センサは、CMOSセンサおよびCCDセンサからなる群より選択されることを特徴とする裏面照射型固体撮像センサ。 - 請求項2記載の裏面照射型固体撮像センサにおいて、
前記感光Siエピタキシャル裏面は、10〜300μmの範囲の厚さを有することを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサにおいて、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらうちの一方の層状連続体は、HfO2、TiO2、SiO、SiO2、Ti2O3、Al2O3、Y2O3、LaF3、AlF3およびDyF3からなる群に含まれることを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサにおいて、
前記耐火金属酸化物またはフッ化物誘電体の層状連続体は、個々の層厚さが2〜300nmであることを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサにおいて、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、反射率がエタロン振動振幅のピークを中心とする波長に対し1%以下でかつ400〜1100nmの範囲波長に対し11%未満となるように追加されて連続体の厚さが決定されることを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサは、更に、
テトラフェニルブタジエン(TPB)またはナフタルイミド(Lumogen(登録商標))からなる群の波長シフト発光体膜を備える裏面照射型固体撮像センサ。 - 請求項7記載の裏面照射型固体撮像センサにおいて、
前記波長シフト発光体は、3000〜5000オングストローム(300−500nm)の層厚さを有することを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサにおいて、
前記センサは、EM−CCDであることを特徴とする裏面照射型固体撮像センサ。 - 請求項9記載の裏面照射型固体撮像センサにおいて、
前記感光Siエピタキシャル裏面は、8〜50μmの範囲の厚さを有することを特徴とする裏面照射型固体撮像センサ。 - 請求項9記載の裏面照射型固体撮像センサにおいて、
前記感光Siエピタキシャル裏面は、既存絶縁誘電体層を有することを特徴とする裏面照射型固体撮像センサ。 - 請求項9記載の裏面照射型固体撮像センサにおいて、
前記感光Siエピタキシャル裏面は、前記撮像センサの前記感光領域の頂部において誘電絶縁層の副領域を覆うように配置されたアルミニウム被覆マスクを有することを特徴とする裏面照射型固体撮像センサ。 - CCD、CMOSまたはEM−CCDからなる群の撮像センサを提供するステップと、
前記撮像センサに感光Siエピタキシャル裏面を提供するステップと、
前記感光Siエピタキシャル裏面の頂部に耐火金属酸化物およびフッ化物誘電体もしくはそれらのうち一方の層状連続体を形成するステップと
を備える裏面照射型固体撮像センサの製造方法。 - 請求項13記載の方法は、更に、
前記層状連続体の頂部にテトラフェニルブタジエン(TPB)またはナフタルイミド(Lumogen(登録商標))からなる群の波長シフト発光体膜を形成するステップを備える方法。 - 請求項13記載の方法において、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、HfO2、TiO2、SiO、SiO2、Ti2O3、Al2O3、Y2O3、LaF3、AlF3およびDyF3からなる群に含まれることを特徴とする方法。 - 請求項13記載の方法において、
前記感光Siエピタキシャル裏面は、既存絶縁誘電体層を有することを特徴とする方法。 - 請求項13記載の方法は、更に、
前記撮像センサの前記感光領域の頂部において誘電絶縁層の副領域を覆うようにアルミニウム被覆マスクを配置するステップを備える方法。 - 請求項13記載の方法において、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、HfO2、TiO2、SiO、SiO2、Ti2O3、Al2O3、Y2O3、LaF3、AlF3およびDyF3からなる群に含まれることを特徴とする方法。 - 請求項13記載の方法において、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、2〜300nmの個々の層厚さを有することを特徴とする方法。 - 請求項13記載の方法において、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、反射率がエタロン振動振幅のピークを中心とする波長に対し1%以下でかつ400〜1100nmの範囲の波長に対し11%未満となるように追加されて連続体の厚さが決定されることを特徴とする方法。 - 請求項14記載の方法において、
前記波長シフト発光体は、3000〜5000オングストローム(300−500nm)の層厚さを有することを特徴とする方法。
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US29707610P | 2010-01-21 | 2010-01-21 | |
US61/297,076 | 2010-01-21 | ||
PCT/US2011/021913 WO2011091159A1 (en) | 2010-01-21 | 2011-01-20 | Solid state back- illuminated photon sensor and its method of fabrication |
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