JP5769731B2 - 固体裏面照射型光子センサおよびその製造方法 - Google Patents
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- 238000003384 imaging method Methods 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 44
- 229910044991 metal oxide Inorganic materials 0.000 claims description 17
- 150000004706 metal oxides Chemical class 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000003870 refractory metal Substances 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 12
- 238000005286 illumination Methods 0.000 claims description 12
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910016569 AlF 3 Inorganic materials 0.000 claims description 6
- 229910017768 LaF 3 Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 31
- 239000010408 film Substances 0.000 description 15
- 238000002310 reflectometry Methods 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000000869 ion-assisted deposition Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000001444 catalytic combustion detection Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
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- 238000010521 absorption reaction Methods 0.000 description 1
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
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Description
上記に鑑み、広いスペクトル範囲に亘り高いQEで妥協の無いNIR画像化を行う裏面照射型撮像センサ、より具体的には、感光裏面の反射率を低下するための反射防止構造を採用した裏面照射型固体撮像センサであって、NIRにおける光の干渉効果(エタロニング)を軽減すると共に広いスペクトル範囲(UV−NIR)に亘り高い素子QEが得られるセンサが求められている。
本発明の実施形態は、UV−NIRスペクトルに亘り高い素子QEを保持しながらNIRスペクトルに亘るエタロニングを最小にするように、固体撮像センサの感光領域の頂部に物理蒸着法により成膜される層状の誘電性耐火金属酸化物および金属フッ化物もしくはそれらのうちの一方の反射防止構造を採用する固体撮像センサを提供することによって、前述したニーズに対応するものである。
Claims (15)
- エピタキシャルな裏面を有する感光性のシリコン基板(30)であって、波長依存の干渉縞振幅を含む透過強度を有しているシリコン基板(30)と、前記シリコン基板(30)の裏面の頂部に耐火金属酸化物またはフッ化物誘電体の層状連続体を含む反射防止構造(40)とを備える裏面照射型固体撮像センサにおいて、
前記反射防止構造(40)は、ピーク干渉縞振幅の波長で前記シリコン基板(30)の裏面から反射される光の量を最小にするように設計されていることを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサにおいて、
前記センサは、CMOSセンサおよびCCDセンサからなる群より選択されることを特徴とする裏面照射型固体撮像センサ。 - 請求項2記載の裏面照射型固体撮像センサにおいて、
感光性のシリコン基板(30)は、10〜300μmの範囲の厚さを有することを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサにおいて、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらうちの一方の層状連続体は、HfO2、TiO2、SiO、SiO2、Ti2O3、Al2O3、Y2O3、LaF3、AlF3およびDyF3からなる群に含まれることを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサにおいて、
前記耐火金属酸化物またはフッ化物誘電体の層状連続体は、個々の層厚さが2〜300nmであるか、或いは、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、反射率が前記ピーク干渉縞振幅を中心とする波長に対し1%以下でかつ400〜1100nmの範囲の波長に対し11%未満となるように決定された厚さを有していることを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサは、更に、
テトラフェニルブタジエン(TPB)またはナフタルイミド(Lumogen(登録商標))からなる群の波長シフト発光体膜を備えることを特徴とする裏面照射型固体撮像センサ。 - 請求項6記載の裏面照射型固体撮像センサにおいて、
前記波長シフト発光体は、300−500nmの層厚さを有することを特徴とする裏面照射型固体撮像センサ。 - 請求項1記載の裏面照射型固体撮像センサにおいて、
前記センサは、EM−CCDであることを特徴とする裏面照射型固体撮像センサ。 - 請求項8記載の裏面照射型固体撮像センサにおいて、
感光性のシリコン基板(30)は、8〜50μmの範囲の厚さを有し、
前記シリコン基板の裏面には、絶縁誘電体層が設けられているか、或いは、前記撮像センサの感光領域の頂部において絶縁誘電体層の一部領域を覆うようにアルミニウム被覆マスクが設けられていることを特徴とする裏面照射型固体撮像センサ。 - CCD、CMOSまたはEM−CCDからなる群の撮像センサを提供するステップであって、前記撮像センサは、感光性のシリコン基板(30)を有し、前記シリコン基板(30)は、波長依存の干渉縞振幅を含む透過強度を有しているステップと、
前記撮像センサに、シリコン基板(30)のエピタキシャルな裏面を提供するステップと、
前記シリコン基板(30)の裏面の頂部に、耐火金属酸化物およびフッ化物誘電体もしくはそれらのうち一方の層状連続体を含む反射防止構造(40)を形成するステップとを備える裏面照射型固体撮像センサの製造方法において、
前記反射防止構造(40)は、ピーク干渉縞振幅の波長で前記シリコン基板(30)の裏面から反射される光の量を最小にするように設計されていることを特徴とする方法。 - 請求項10記載の方法は、更に、
前記層状連続体の頂部にテトラフェニルブタジエン(TPB)またはナフタルイミド(Lumogen(登録商標))からなる群の波長シフト発光体膜を形成するステップを備える方法。 - 請求項10記載の方法において、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、HfO2、TiO2、SiO、SiO2、Ti2O3、Al2O3、Y2O3、LaF3、AlF3およびDyF3からなる群に含まれることを特徴とする方法。 - 請求項10記載の方法において、
前記シリコン基板の裏面には、絶縁誘電体層が設けられているか、或いは、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、HfO2、TiO2、SiO、SiO2、Ti2O3、Al2O3、Y2O3、LaF3、AlF3およびDyF3からなる群に含まれ、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、2〜300nmの個々の層厚さを有するか、或いは、
前記耐火金属酸化物およびフッ化物誘電体もしくはそれらのうちの一方の層状連続体は、反射率がピーク干渉縞振幅を中心とする波長に対し1%以下でかつ400〜1100nmの範囲の波長に対し11%未満となるように決定された厚さを有していることを特徴とする方法。 - 請求項10記載の方法は、更に、
前記撮像センサの感光領域の頂部において絶縁誘電体層の一部領域を覆うようにアルミニウム被覆マスクを配置するステップであって、前記絶縁誘電体層が前記シリコン基板の裏面に設けられている方法。 - 請求項11記載の方法において、
前記波長シフト発光体は、300−500nmの層厚さを有することを特徴とする方法。
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US29707610P | 2010-01-21 | 2010-01-21 | |
US61/297,076 | 2010-01-21 | ||
PCT/US2011/021913 WO2011091159A1 (en) | 2010-01-21 | 2011-01-20 | Solid state back- illuminated photon sensor and its method of fabrication |
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JP2013518414A JP2013518414A (ja) | 2013-05-20 |
JP2013518414A5 JP2013518414A5 (ja) | 2014-03-06 |
JP5769731B2 true JP5769731B2 (ja) | 2015-08-26 |
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EP (1) | EP2526566B1 (ja) |
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WO (1) | WO2011091159A1 (ja) |
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