JP2006005288A5 - - Google Patents

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Publication number
JP2006005288A5
JP2006005288A5 JP2004182366A JP2004182366A JP2006005288A5 JP 2006005288 A5 JP2006005288 A5 JP 2006005288A5 JP 2004182366 A JP2004182366 A JP 2004182366A JP 2004182366 A JP2004182366 A JP 2004182366A JP 2006005288 A5 JP2006005288 A5 JP 2006005288A5
Authority
JP
Japan
Prior art keywords
semiconductor device
dummy
insulating film
interlayer insulating
dummy pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004182366A
Other languages
English (en)
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JP4401874B2 (ja
JP2006005288A (ja
Filing date
Publication date
Priority claimed from JP2004182366A external-priority patent/JP4401874B2/ja
Priority to JP2004182366A priority Critical patent/JP4401874B2/ja
Application filed filed Critical
Priority to US11/154,745 priority patent/US7400028B2/en
Publication of JP2006005288A publication Critical patent/JP2006005288A/ja
Publication of JP2006005288A5 publication Critical patent/JP2006005288A5/ja
Priority to US12/107,599 priority patent/US8330253B2/en
Publication of JP4401874B2 publication Critical patent/JP4401874B2/ja
Application granted granted Critical
Priority to US13/532,459 priority patent/US8604592B2/en
Priority to US14/068,666 priority patent/US8921982B2/en
Priority to US14/560,985 priority patent/US9466575B2/en
Priority to US15/280,549 priority patent/US9837365B2/en
Priority to US15/809,697 priority patent/US10672725B2/en
Priority to US16/855,705 priority patent/US11056450B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Claims (5)

  1. 比誘電率が３以下の層間絶縁膜と、
    半導体チップの回路形成領域を囲むように前記半導体チップのエッジ部近傍の前記層間絶縁膜内に形成されたシールリング部と
    を備える半導体装置であって、
    前記半導体チップのダイシング領域において、前記層間絶縁膜内に前記シールリング部を囲うように形成されたダミーパターン
    を備え、
    前記ダミーパターンは、平面視で複数の列に沿って配置され、隣り合う列に配置された前記ダミーパターンは、交互に配置されることにより千鳥配置となっていることを特徴とする半導体装置。
  2. 前記ダミーパターンがビア状に形成されたダミービアであることを特徴とする請求項１に記載の半導体装置。
  3. 前記ダイシング領域の前記層間絶縁膜内に前記シールリング部を囲うように、スリット状に形成されたダミースリットビアをさらに備えることを特徴とする請求項１に記載の半導体装置。
  4. 前記ダミースリットビアの線幅が最小寸法の５倍から２０倍であることを特徴とする請求項３に記載の半導体装置。
  5. 前記ダミーパターン上に形成されたダミーメタルをさらに備えることを特徴とする請求項１に記載の半導体装置。
JP2004182366A 2004-06-21 2004-06-21 半導体装置 Expired - Lifetime JP4401874B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2004182366A JP4401874B2 (ja) 2004-06-21 2004-06-21 半導体装置
US11/154,745 US7400028B2 (en) 2004-06-21 2005-06-17 Semiconductor device
US12/107,599 US8330253B2 (en) 2004-06-21 2008-04-22 Semiconductor device
US13/532,459 US8604592B2 (en) 2004-06-21 2012-06-25 Semiconductor device
US14/068,666 US8921982B2 (en) 2004-06-21 2013-10-31 Semiconductor device
US14/560,985 US9466575B2 (en) 2004-06-21 2014-12-04 Semiconductor device
US15/280,549 US9837365B2 (en) 2004-06-21 2016-09-29 Semiconductor device
US15/809,697 US10672725B2 (en) 2004-06-21 2017-11-10 Semiconductor device
US16/855,705 US11056450B2 (en) 2004-06-21 2020-04-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004182366A JP4401874B2 (ja) 2004-06-21 2004-06-21 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009233128A Division JP5214571B2 (ja) 2009-10-07 2009-10-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2006005288A JP2006005288A (ja) 2006-01-05
JP2006005288A5 true JP2006005288A5 (ja) 2007-07-26
JP4401874B2 JP4401874B2 (ja) 2010-01-20

Family

ID=35479777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004182366A Expired - Lifetime JP4401874B2 (ja) 2004-06-21 2004-06-21 半導体装置

Country Status (2)

Country Link
US (8) US7400028B2 (ja)
JP (1) JP4401874B2 (ja)

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