|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
|
US7203007B2
(en)
*
|
2000-05-04 |
2007-04-10 |
Carl Zeiss Smt Ag |
Projection exposure machine comprising a projection lens
|
|
KR100866818B1
(ko)
*
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
|
DE10229249A1
(de)
|
2002-03-01 |
2003-09-04 |
Zeiss Carl Semiconductor Mfg |
Refraktives Projektionsobjektiv mit einer Taille
|
|
US7190527B2
(en)
|
2002-03-01 |
2007-03-13 |
Carl Zeiss Smt Ag |
Refractive projection objective
|
|
DE10210899A1
(de)
*
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
|
WO2004019128A2
(en)
*
|
2002-08-23 |
2004-03-04 |
Nikon Corporation |
Projection optical system and method for photolithography and exposure apparatus and method using same
|
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US10503084B2
(en)
|
2002-11-12 |
2019-12-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
TWI232357B
(en)
|
2002-11-12 |
2005-05-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
US9482966B2
(en)
|
2002-11-12 |
2016-11-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
CN101424881B
(zh)
|
2002-11-12 |
2011-11-30 |
Asml荷兰有限公司 |
光刻投射装置
|
|
US7372541B2
(en)
|
2002-11-12 |
2008-05-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
|
CN100568101C
(zh)
|
2002-11-12 |
2009-12-09 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
TWI255971B
(en)
|
2002-11-29 |
2006-06-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
|
US7242455B2
(en)
|
2002-12-10 |
2007-07-10 |
Nikon Corporation |
Exposure apparatus and method for producing device
|
|
EP1571694A4
(en)
*
|
2002-12-10 |
2008-10-15 |
Nikon Corp |
EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE
|
|
KR20110086130A
(ko)
|
2002-12-10 |
2011-07-27 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
|
EP1571698A4
(en)
|
2002-12-10 |
2006-06-21 |
Nikon Corp |
EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
|
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
|
US7948604B2
(en)
*
|
2002-12-10 |
2011-05-24 |
Nikon Corporation |
Exposure apparatus and method for producing device
|
|
EP1571695A4
(en)
|
2002-12-10 |
2008-10-15 |
Nikon Corp |
EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE SAME
|
|
DE10261775A1
(de)
|
2002-12-20 |
2004-07-01 |
Carl Zeiss Smt Ag |
Vorrichtung zur optischen Vermessung eines Abbildungssystems
|
|
KR101381538B1
(ko)
|
2003-02-26 |
2014-04-04 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법 및 디바이스 제조 방법
|
|
DE10308610B4
(de)
*
|
2003-02-27 |
2006-04-13 |
Carl Zeiss |
Immersionsflüssigkeit für die Mikroskopie bei Wasserimmersion
|
|
JP4353179B2
(ja)
|
2003-03-25 |
2009-10-28 |
株式会社ニコン |
露光装置、露光方法、及びデバイス製造方法
|
|
ATE426914T1
(de)
|
2003-04-07 |
2009-04-15 |
Nikon Corp |
Belichtungsgerat und verfahren zur herstellung einer vorrichtung
|
|
JP4488004B2
(ja)
|
2003-04-09 |
2010-06-23 |
株式会社ニコン |
液浸リソグラフィ流体制御システム
|
|
EP3226073A3
(en)
|
2003-04-09 |
2017-10-11 |
Nikon Corporation |
Exposure method and apparatus, and method for fabricating device
|
|
WO2004093160A2
(en)
|
2003-04-10 |
2004-10-28 |
Nikon Corporation |
Run-off path to collect liquid for an immersion lithography apparatus
|
|
KR101745223B1
(ko)
|
2003-04-10 |
2017-06-08 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
|
|
JP4656057B2
(ja)
*
|
2003-04-10 |
2011-03-23 |
株式会社ニコン |
液浸リソグラフィ装置用電気浸透素子
|
|
EP2667253B1
(en)
*
|
2003-04-10 |
2015-06-10 |
Nikon Corporation |
Environmental system including vacuum scavenge for an immersion lithography apparatus
|
|
JP4582089B2
(ja)
|
2003-04-11 |
2010-11-17 |
株式会社ニコン |
液浸リソグラフィ用の液体噴射回収システム
|
|
SG10201603067VA
(en)
|
2003-04-11 |
2016-05-30 |
Nikon Corp |
Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
|
|
SG189557A1
(en)
|
2003-04-11 |
2013-05-31 |
Nikon Corp |
Cleanup method for optics in immersion lithography
|
|
ATE542167T1
(de)
|
2003-04-17 |
2012-02-15 |
Nikon Corp |
Lithographisches immersionsgerät
|
|
US7348575B2
(en)
|
2003-05-06 |
2008-03-25 |
Nikon Corporation |
Projection optical system, exposure apparatus, and exposure method
|
|
KR101516141B1
(ko)
|
2003-05-06 |
2015-05-04 |
가부시키가이샤 니콘 |
투영 광학계, 노광 장치 및 노광 방법
|
|
TWI295414B
(en)
*
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
JP4552853B2
(ja)
|
2003-05-15 |
2010-09-29 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
|
TWI503865B
(zh)
|
2003-05-23 |
2015-10-11 |
尼康股份有限公司 |
A method of manufacturing an exposure apparatus and an element
|
|
TW201515064A
(zh)
|
2003-05-23 |
2015-04-16 |
尼康股份有限公司 |
曝光方法及曝光裝置以及元件製造方法
|
|
KR20150036794A
(ko)
|
2003-05-28 |
2015-04-07 |
가부시키가이샤 니콘 |
노광 방법, 노광 장치, 및 디바이스 제조 방법
|
|
TWI442694B
(zh)
|
2003-05-30 |
2014-06-21 |
Asml Netherlands Bv |
微影裝置及元件製造方法
|
|
US7213963B2
(en)
|
2003-06-09 |
2007-05-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7684008B2
(en)
|
2003-06-11 |
2010-03-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7317504B2
(en)
|
2004-04-08 |
2008-01-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
TW200511388A
(en)
|
2003-06-13 |
2005-03-16 |
Nikon Corp |
Exposure method, substrate stage, exposure apparatus and method for manufacturing device
|
|
US6867844B2
(en)
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
|
TWI433212B
(zh)
|
2003-06-19 |
2014-04-01 |
尼康股份有限公司 |
An exposure apparatus, an exposure method, and an element manufacturing method
|
|
DE60308161T2
(de)
|
2003-06-27 |
2007-08-09 |
Asml Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
|
US6809794B1
(en)
*
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
|
EP1498778A1
(en)
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1494074A1
(en)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
DE60321779D1
(de)
|
2003-06-30 |
2008-08-07 |
Asml Netherlands Bv |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
|
WO2005006026A2
(en)
|
2003-07-01 |
2005-01-20 |
Nikon Corporation |
Using isotopically specified fluids as optical elements
|
|
EP2466382B1
(en)
|
2003-07-08 |
2014-11-26 |
Nikon Corporation |
Wafer table for immersion lithography
|
|
KR20060026883A
(ko)
*
|
2003-07-09 |
2006-03-24 |
가부시키가이샤 니콘 |
결합장치, 노광장치 및 디바이스 제조방법
|
|
EP1646075B1
(en)
|
2003-07-09 |
2011-06-15 |
Nikon Corporation |
Exposure apparatus and device manufacturing method
|
|
KR101296501B1
(ko)
|
2003-07-09 |
2013-08-13 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
|
SG109000A1
(en)
|
2003-07-16 |
2005-02-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
EP1500982A1
(en)
|
2003-07-24 |
2005-01-26 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP3346485A1
(en)
|
2003-07-25 |
2018-07-11 |
Nikon Corporation |
Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
|
|
EP1503244A1
(en)
*
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographic projection apparatus and device manufacturing method
|
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
|
KR101641011B1
(ko)
|
2003-07-28 |
2016-07-19 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
|
|
US7175968B2
(en)
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
|
US7779781B2
(en)
|
2003-07-31 |
2010-08-24 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7579135B2
(en)
*
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
|
US7700267B2
(en)
*
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
|
KR101094114B1
(ko)
|
2003-08-26 |
2011-12-15 |
가부시키가이샤 니콘 |
광학소자 및 노광장치
|
|
US8149381B2
(en)
|
2003-08-26 |
2012-04-03 |
Nikon Corporation |
Optical element and exposure apparatus
|
|
TWI263859B
(en)
*
|
2003-08-29 |
2006-10-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
EP2261740B1
(en)
|
2003-08-29 |
2014-07-09 |
ASML Netherlands BV |
Lithographic apparatus
|
|
TWI245163B
(en)
|
2003-08-29 |
2005-12-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
US6954256B2
(en)
*
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
|
EP2804048A1
(en)
|
2003-08-29 |
2014-11-19 |
Nikon Corporation |
Exposure apparatus and device fabricating method
|
|
KR101371917B1
(ko)
|
2003-09-03 |
2014-03-07 |
가부시키가이샤 니콘 |
액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
|
|
WO2005033800A1
(de)
|
2003-09-09 |
2005-04-14 |
Carl Zeiss Smt Ag |
Lithographie-objektiv und projektionsbelichtungsanlage mit mindestens einem solchen lithographie-objektiv
|
|
JP4444920B2
(ja)
|
2003-09-19 |
2010-03-31 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
|
US8208198B2
(en)
|
2004-01-14 |
2012-06-26 |
Carl Zeiss Smt Gmbh |
Catadioptric projection objective
|
|
EP1519231B1
(en)
|
2003-09-29 |
2005-12-21 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1519230A1
(en)
|
2003-09-29 |
2005-03-30 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP2320273B1
(en)
|
2003-09-29 |
2015-01-21 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing a device
|
|
JP4492539B2
(ja)
*
|
2003-09-29 |
2010-06-30 |
株式会社ニコン |
液浸型光学系及び投影露光装置、並びにデバイス製造方法
|
|
US7158211B2
(en)
|
2003-09-29 |
2007-01-02 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7056646B1
(en)
|
2003-10-01 |
2006-06-06 |
Advanced Micro Devices, Inc. |
Use of base developers as immersion lithography fluid
|
|
ITMI20031914A1
(it)
*
|
2003-10-03 |
2005-04-04 |
Solvay Solexis Spa |
Perfluoropolieteri.
|
|
WO2005036623A1
(ja)
|
2003-10-08 |
2005-04-21 |
Zao Nikon Co., Ltd. |
基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
|
|
JP2005136364A
(ja)
|
2003-10-08 |
2005-05-26 |
Zao Nikon Co Ltd |
基板搬送装置、露光装置、並びにデバイス製造方法
|
|
EP1672681B8
(en)
|
2003-10-08 |
2011-09-21 |
Miyagi Nikon Precision Co., Ltd. |
Exposure apparatus, substrate carrying method, exposure method, and method for producing device
|
|
TW201738932A
(zh)
|
2003-10-09 |
2017-11-01 |
Nippon Kogaku Kk |
曝光裝置及曝光方法、元件製造方法
|
|
EP1524558A1
(en)
|
2003-10-15 |
2005-04-20 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1524557A1
(en)
|
2003-10-15 |
2005-04-20 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
DE10394297D2
(de)
|
2003-10-22 |
2006-07-06 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
|
US7411653B2
(en)
|
2003-10-28 |
2008-08-12 |
Asml Netherlands B.V. |
Lithographic apparatus
|
|
US7352433B2
(en)
|
2003-10-28 |
2008-04-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
TWI511179B
(zh)
|
2003-10-28 |
2015-12-01 |
尼康股份有限公司 |
照明光學裝置、曝光裝置、曝光方法以及元件製造方法
|
|
US7113259B2
(en)
*
|
2003-10-31 |
2006-09-26 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
JP4295712B2
(ja)
|
2003-11-14 |
2009-07-15 |
エーエスエムエル ネザーランズ ビー.ブイ. |
リソグラフィ装置及び装置製造方法
|
|
TWI512335B
(zh)
|
2003-11-20 |
2015-12-11 |
尼康股份有限公司 |
光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
|
|
US7545481B2
(en)
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
CN100538524C
(zh)
*
|
2003-12-02 |
2009-09-09 |
卡尔蔡司Smt股份有限公司 |
投影光学系统
|
|
WO2005055296A1
(ja)
|
2003-12-03 |
2005-06-16 |
Nikon Corporation |
露光装置、露光方法及びデバイス製造方法、並びに光学部品
|
|
KR101119813B1
(ko)
|
2003-12-15 |
2012-03-06 |
가부시키가이샤 니콘 |
스테이지 장치, 노광 장치, 및 노광 방법
|
|
WO2005106589A1
(en)
*
|
2004-05-04 |
2005-11-10 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus and immersion liquid therefore
|
|
US20070081133A1
(en)
*
|
2004-12-14 |
2007-04-12 |
Niikon Corporation |
Projection exposure apparatus and stage unit, and exposure method
|
|
JP2007516613A
(ja)
*
|
2003-12-15 |
2007-06-21 |
カール・ツアイス・エスエムテイ・アーゲー |
少なくとも1つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ
|
|
US7466489B2
(en)
|
2003-12-15 |
2008-12-16 |
Susanne Beder |
Projection objective having a high aperture and a planar end surface
|
|
KR101200654B1
(ko)
*
|
2003-12-15 |
2012-11-12 |
칼 짜이스 에스엠티 게엠베하 |
고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
|
|
JP2005189850A
(ja)
*
|
2003-12-15 |
2005-07-14 |
Carl Zeiss Smt Ag |
液浸リソグラフィー用屈折性投影対物レンズ
|
|
JPWO2005057635A1
(ja)
*
|
2003-12-15 |
2007-07-05 |
株式会社ニコン |
投影露光装置及びステージ装置、並びに露光方法
|
|
JP5102492B2
(ja)
|
2003-12-19 |
2012-12-19 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
結晶素子を有するマイクロリソグラフィー投影用対物レンズ
|
|
US7460206B2
(en)
*
|
2003-12-19 |
2008-12-02 |
Carl Zeiss Smt Ag |
Projection objective for immersion lithography
|
|
US7589818B2
(en)
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
|
US7394521B2
(en)
*
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
JP4429023B2
(ja)
*
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
US20080151364A1
(en)
|
2004-01-14 |
2008-06-26 |
Carl Zeiss Smt Ag |
Catadioptric projection objective
|
|
WO2005071491A2
(en)
|
2004-01-20 |
2005-08-04 |
Carl Zeiss Smt Ag |
Exposure apparatus and measuring device for a projection lens
|
|
TWI259319B
(en)
*
|
2004-01-23 |
2006-08-01 |
Air Prod & Chem |
Immersion lithography fluids
|
|
US20050161644A1
(en)
|
2004-01-23 |
2005-07-28 |
Peng Zhang |
Immersion lithography fluids
|
|
US7589822B2
(en)
|
2004-02-02 |
2009-09-15 |
Nikon Corporation |
Stage drive method and stage unit, exposure apparatus, and device manufacturing method
|
|
JP2007520893A
(ja)
*
|
2004-02-03 |
2007-07-26 |
ロチェスター インスティテュート オブ テクノロジー |
流体を使用したフォトリソグラフィ法及びそのシステム
|
|
US7990516B2
(en)
|
2004-02-03 |
2011-08-02 |
Nikon Corporation |
Immersion exposure apparatus and device manufacturing method with liquid detection apparatus
|
|
TWI511182B
(zh)
|
2004-02-06 |
2015-12-01 |
尼康股份有限公司 |
光學照明裝置、曝光裝置、曝光方法以及元件製造方法
|
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1714192A1
(en)
*
|
2004-02-13 |
2006-10-25 |
Carl Zeiss SMT AG |
Projection objective for a microlithographic projection exposure apparatus
|
|
CN100592210C
(zh)
*
|
2004-02-13 |
2010-02-24 |
卡尔蔡司Smt股份公司 |
微平版印刷投影曝光装置的投影物镜
|
|
US7741012B1
(en)
|
2004-03-01 |
2010-06-22 |
Advanced Micro Devices, Inc. |
Method for removal of immersion lithography medium in immersion lithography processes
|
|
US7215431B2
(en)
*
|
2004-03-04 |
2007-05-08 |
Therma-Wave, Inc. |
Systems and methods for immersion metrology
|
|
US8488102B2
(en)
*
|
2004-03-18 |
2013-07-16 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
|
TWI402893B
(zh)
|
2004-03-25 |
2013-07-21 |
尼康股份有限公司 |
曝光方法
|
|
JP4510494B2
(ja)
*
|
2004-03-29 |
2010-07-21 |
キヤノン株式会社 |
露光装置
|
|
US7034917B2
(en)
|
2004-04-01 |
2006-04-25 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and device manufactured thereby
|
|
US7227619B2
(en)
|
2004-04-01 |
2007-06-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7295283B2
(en)
|
2004-04-02 |
2007-11-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005098504A1
(en)
|
2004-04-08 |
2005-10-20 |
Carl Zeiss Smt Ag |
Imaging system with mirror group
|
|
US7898642B2
(en)
|
2004-04-14 |
2011-03-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005103788A1
(de)
*
|
2004-04-26 |
2005-11-03 |
Carl Zeiss Smt Ag |
Verfahren zum verbinden eines optischen elements mit einer haltestruktur
|
|
US7379159B2
(en)
|
2004-05-03 |
2008-05-27 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1747499A2
(en)
|
2004-05-04 |
2007-01-31 |
Nikon Corporation |
Apparatus and method for providing fluid for immersion lithography
|
|
KR20170028451A
(ko)
|
2004-05-17 |
2017-03-13 |
칼 짜이스 에스엠티 게엠베하 |
중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
|
|
US7616383B2
(en)
|
2004-05-18 |
2009-11-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7486381B2
(en)
*
|
2004-05-21 |
2009-02-03 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US20050260528A1
(en)
*
|
2004-05-22 |
2005-11-24 |
Hynix Semiconductor Inc. |
Liquid composition for immersion lithography and lithography method using the same
|
|
JP4913041B2
(ja)
*
|
2004-06-04 |
2012-04-11 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
強度変化の補償を伴う投影系及びそのための補償素子
|
|
CN101833247B
(zh)
|
2004-06-04 |
2013-11-06 |
卡尔蔡司Smt有限责任公司 |
微光刻投影曝光系统的投影物镜的光学测量的测量系统
|
|
KR101433496B1
(ko)
|
2004-06-09 |
2014-08-22 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
|
KR101639928B1
(ko)
*
|
2004-06-10 |
2016-07-14 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법, 및 디바이스 제조 방법
|
|
US7481867B2
(en)
|
2004-06-16 |
2009-01-27 |
Edwards Limited |
Vacuum system for immersion photolithography
|
|
DE102004031688B4
(de)
*
|
2004-06-30 |
2006-06-14 |
Infineon Technologies Ag |
Verfahren zur Anpassung von Strukturabmessungen bei der photolithographischen Projektion eines Musters von Strukturelementen auf einen Halbleiterwafer
|
|
US7463330B2
(en)
|
2004-07-07 |
2008-12-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
KR101433491B1
(ko)
*
|
2004-07-12 |
2014-08-22 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
|
US7161663B2
(en)
|
2004-07-22 |
2007-01-09 |
Asml Netherlands B.V. |
Lithographic apparatus
|
|
EP1626571A1
(en)
*
|
2004-08-13 |
2006-02-15 |
STMicroelectronics Limited |
Imaging assembly
|
|
US7304715B2
(en)
|
2004-08-13 |
2007-12-04 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US8305553B2
(en)
|
2004-08-18 |
2012-11-06 |
Nikon Corporation |
Exposure apparatus and device manufacturing method
|
|
US7701550B2
(en)
|
2004-08-19 |
2010-04-20 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US20060044533A1
(en)
*
|
2004-08-27 |
2006-03-02 |
Asmlholding N.V. |
System and method for reducing disturbances caused by movement in an immersion lithography system
|
|
US7301707B2
(en)
|
2004-09-03 |
2007-11-27 |
Carl Zeiss Smt Ag |
Projection optical system and method
|
|
US7529030B2
(en)
*
|
2004-09-06 |
2009-05-05 |
Olympus Corporation |
Optical apparatus with optical element made of a medium exhibiting negative refraction
|
|
US7133114B2
(en)
|
2004-09-20 |
2006-11-07 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US20060060653A1
(en)
*
|
2004-09-23 |
2006-03-23 |
Carl Wittenberg |
Scanner system and method for simultaneously acquiring data images from multiple object planes
|
|
US7522261B2
(en)
|
2004-09-24 |
2009-04-21 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7355674B2
(en)
|
2004-09-28 |
2008-04-08 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and computer program product
|
|
JP2008516420A
(ja)
*
|
2004-10-05 |
2008-05-15 |
カール・ツアイス・エスエムテイ・アーゲー |
マイクロリソグラフィ投影露光装置
|
|
US7894040B2
(en)
|
2004-10-05 |
2011-02-22 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7209213B2
(en)
|
2004-10-07 |
2007-04-24 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7508488B2
(en)
|
2004-10-13 |
2009-03-24 |
Carl Zeiss Smt Ag |
Projection exposure system and method of manufacturing a miniaturized device
|
|
US7379155B2
(en)
|
2004-10-18 |
2008-05-27 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7119876B2
(en)
|
2004-10-18 |
2006-10-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7128427B2
(en)
*
|
2004-11-05 |
2006-10-31 |
Sematech, Inc. |
Method and apparatus for fluid handling in immersion lithography
|
|
JP4868209B2
(ja)
*
|
2004-11-10 |
2012-02-01 |
株式会社ニコン |
投影光学系、露光装置、および露光方法
|
|
ATE514115T1
(de)
|
2004-11-10 |
2011-07-15 |
Nikon Corp |
Optisches projektionssystem, belichtungsgeräte und belichtungsverfahren
|
|
US7251013B2
(en)
|
2004-11-12 |
2007-07-31 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7414699B2
(en)
*
|
2004-11-12 |
2008-08-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7423720B2
(en)
|
2004-11-12 |
2008-09-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7583357B2
(en)
*
|
2004-11-12 |
2009-09-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7145630B2
(en)
|
2004-11-23 |
2006-12-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7161654B2
(en)
*
|
2004-12-02 |
2007-01-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7397533B2
(en)
|
2004-12-07 |
2008-07-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7248334B2
(en)
|
2004-12-07 |
2007-07-24 |
Asml Netherlands B.V. |
Sensor shield
|
|
US7365827B2
(en)
|
2004-12-08 |
2008-04-29 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7508489B2
(en)
|
2004-12-13 |
2009-03-24 |
Carl Zeiss Smt Ag |
Method of manufacturing a miniaturized device
|
|
US7403261B2
(en)
|
2004-12-15 |
2008-07-22 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7880860B2
(en)
|
2004-12-20 |
2011-02-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2006069795A2
(en)
*
|
2004-12-30 |
2006-07-06 |
Carl Zeiss Smt Ag |
Projection optical system
|
|
DE602006012746D1
(de)
*
|
2005-01-14 |
2010-04-22 |
Asml Netherlands Bv |
Lithografische Vorrichtung und Herstellungsverfahren
|
|
SG124351A1
(en)
|
2005-01-14 |
2006-08-30 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
US20060158615A1
(en)
*
|
2005-01-18 |
2006-07-20 |
Williamson David M |
Catadioptric 1x projection system and method
|
|
KR20180125636A
(ko)
*
|
2005-01-31 |
2018-11-23 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
|
US8692973B2
(en)
|
2005-01-31 |
2014-04-08 |
Nikon Corporation |
Exposure apparatus and method for producing device
|
|
US7282701B2
(en)
|
2005-02-28 |
2007-10-16 |
Asml Netherlands B.V. |
Sensor for use in a lithographic apparatus
|
|
US7324185B2
(en)
|
2005-03-04 |
2008-01-29 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1720069A2
(en)
|
2005-04-07 |
2006-11-08 |
Carl Zeiss SMT AG |
Method of manufacturing a projection-optical system
|
|
USRE43576E1
(en)
|
2005-04-08 |
2012-08-14 |
Asml Netherlands B.V. |
Dual stage lithographic apparatus and device manufacturing method
|
|
DE102005017752B4
(de)
|
2005-04-15 |
2016-08-04 |
Heraeus Quarzglas Gmbh & Co. Kg |
Optisches Bauteil aus Quarzglas, Verfahren zur Herstellung des Bauteils und Verwendung desselben
|
|
DE102006013560A1
(de)
*
|
2005-04-19 |
2006-10-26 |
Carl Zeiss Smt Ag |
Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage sowie Verfahren zu dessen Herstellung
|
|
US20060232753A1
(en)
*
|
2005-04-19 |
2006-10-19 |
Asml Holding N.V. |
Liquid immersion lithography system with tilted liquid flow
|
|
US8248577B2
(en)
|
2005-05-03 |
2012-08-21 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
KR101762083B1
(ko)
|
2005-05-12 |
2017-07-26 |
가부시키가이샤 니콘 |
투영 광학계, 노광 장치 및 노광 방법
|
|
TWI454731B
(zh)
|
2005-05-27 |
2014-10-01 |
Zeiss Carl Smt Gmbh |
用於改進投影物鏡的成像性質之方法以及該投影物鏡
|
|
US20070013882A1
(en)
*
|
2005-06-07 |
2007-01-18 |
Carl Zeiss Smt Ag |
Method of manufacturing projection objectives and set of projection objectives manufactured by that method
|
|
US7385673B2
(en)
*
|
2005-06-10 |
2008-06-10 |
International Business Machines Corporation |
Immersion lithography with equalized pressure on at least projection optics component and wafer
|
|
WO2006133800A1
(en)
|
2005-06-14 |
2006-12-21 |
Carl Zeiss Smt Ag |
Lithography projection objective, and a method for correcting image defects of the same
|
|
US7262422B2
(en)
*
|
2005-07-01 |
2007-08-28 |
Spansion Llc |
Use of supercritical fluid to dry wafer and clean lens in immersion lithography
|
|
US7535644B2
(en)
|
2005-08-12 |
2009-05-19 |
Asml Netherlands B.V. |
Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
|
|
WO2007020004A1
(de)
|
2005-08-17 |
2007-02-22 |
Carl Zeiss Smt Ag |
Projektionsobjektiv und verfahren zur optimierung einer systemblende eines projektionsobjektivs
|
|
US7357768B2
(en)
*
|
2005-09-22 |
2008-04-15 |
William Marshall |
Recliner exerciser
|
|
US8202460B2
(en)
*
|
2005-09-22 |
2012-06-19 |
International Business Machines Corporation |
Microelectronic substrate having removable edge extension element
|
|
US7773195B2
(en)
|
2005-11-29 |
2010-08-10 |
Asml Holding N.V. |
System and method to increase surface tension and contact angle in immersion lithography
|
|
US20070124987A1
(en)
*
|
2005-12-05 |
2007-06-07 |
Brown Jeffrey K |
Electronic pest control apparatus
|
|
KR100768849B1
(ko)
*
|
2005-12-06 |
2007-10-22 |
엘지전자 주식회사 |
계통 연계형 연료전지 시스템의 전원공급장치 및 방법
|
|
WO2007071569A1
(en)
*
|
2005-12-23 |
2007-06-28 |
Carl Zeiss Smt Ag |
Projection objective of a microlithographic projection exposure apparatus
|
|
US7649611B2
(en)
|
2005-12-30 |
2010-01-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7893047B2
(en)
*
|
2006-03-03 |
2011-02-22 |
Arch Chemicals, Inc. |
Biocide composition comprising pyrithione and pyrrole derivatives
|
|
DE102006021797A1
(de)
|
2006-05-09 |
2007-11-15 |
Carl Zeiss Smt Ag |
Optische Abbildungseinrichtung mit thermischer Dämpfung
|
|
US8072577B2
(en)
|
2006-06-05 |
2011-12-06 |
Macronix International Co., Ltd. |
Lithography systems and processes
|
|
EP1906251A1
(en)
*
|
2006-09-26 |
2008-04-02 |
Carl Zeiss SMT AG |
Projection exposure method and projection exposure system
|
|
US20080084549A1
(en)
*
|
2006-10-09 |
2008-04-10 |
Rottmayer Robert E |
High refractive index media for immersion lithography and method of immersion lithography using same
|
|
US8817226B2
(en)
|
2007-02-15 |
2014-08-26 |
Asml Holding N.V. |
Systems and methods for insitu lens cleaning using ozone in immersion lithography
|
|
US8654305B2
(en)
|
2007-02-15 |
2014-02-18 |
Asml Holding N.V. |
Systems and methods for insitu lens cleaning in immersion lithography
|
|
US8237911B2
(en)
|
2007-03-15 |
2012-08-07 |
Nikon Corporation |
Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
|
|
US20080259308A1
(en)
*
|
2007-04-18 |
2008-10-23 |
Carl Zeiss Smt Ag |
Projection objective for microlithography
|
|
JP2010527160A
(ja)
*
|
2007-05-14 |
2010-08-05 |
カール・ツァイス・エスエムティー・アーゲー |
マイクロリソグラフィ用投影対物器械及び投影露光装置
|
|
US7760425B2
(en)
*
|
2007-09-05 |
2010-07-20 |
Carl Zeiss Smt Ag |
Chromatically corrected catadioptric objective and projection exposure apparatus including the same
|
|
US8451427B2
(en)
|
2007-09-14 |
2013-05-28 |
Nikon Corporation |
Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
|
|
JP5013119B2
(ja)
*
|
2007-09-20 |
2012-08-29 |
信越化学工業株式会社 |
パターン形成方法並びにこれに用いるレジスト材料
|
|
JP5267029B2
(ja)
|
2007-10-12 |
2013-08-21 |
株式会社ニコン |
照明光学装置、露光装置及びデバイスの製造方法
|
|
WO2009050976A1
(en)
|
2007-10-16 |
2009-04-23 |
Nikon Corporation |
Illumination optical system, exposure apparatus, and device manufacturing method
|
|
EP2179329A1
(en)
|
2007-10-16 |
2010-04-28 |
Nikon Corporation |
Illumination optical system, exposure apparatus, and device manufacturing method
|
|
US8379187B2
(en)
|
2007-10-24 |
2013-02-19 |
Nikon Corporation |
Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
|
|
US9116346B2
(en)
|
2007-11-06 |
2015-08-25 |
Nikon Corporation |
Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
|
|
JP5228995B2
(ja)
*
|
2008-03-05 |
2013-07-03 |
信越化学工業株式会社 |
重合性モノマー化合物、パターン形成方法並びにこれに用いるレジスト材料
|
|
KR101448152B1
(ko)
*
|
2008-03-26 |
2014-10-07 |
삼성전자주식회사 |
수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
|
|
US9176393B2
(en)
|
2008-05-28 |
2015-11-03 |
Asml Netherlands B.V. |
Lithographic apparatus and a method of operating the apparatus
|
|
CN101910817B
(zh)
|
2008-05-28 |
2016-03-09 |
株式会社尼康 |
照明光学系统、曝光装置以及器件制造方法
|
|
JP5253081B2
(ja)
*
|
2008-10-14 |
2013-07-31 |
キヤノン株式会社 |
投影光学系、露光装置及びデバイスの製造方法
|
|
JP5218227B2
(ja)
*
|
2008-12-12 |
2013-06-26 |
信越化学工業株式会社 |
パターン形成方法
|
|
MX2012007581A
(es)
*
|
2009-12-28 |
2012-07-30 |
Pioneer Hi Bred Int |
Genotipos restauradores de la fertilidad de sorgo y metodos de seleccion asistida por marcadores.
|
|
EP2381310B1
(en)
|
2010-04-22 |
2015-05-06 |
ASML Netherlands BV |
Fluid handling structure and lithographic apparatus
|
|
CN102298198B
(zh)
*
|
2010-06-22 |
2013-05-22 |
上海微电子装备有限公司 |
一种大视场光刻投影物镜
|
|
US8476004B2
(en)
|
2011-06-27 |
2013-07-02 |
United Microelectronics Corp. |
Method for forming photoresist patterns
|
|
DE102012006244A1
(de)
*
|
2012-03-21 |
2013-09-26 |
Jenoptik Optical Systems Gmbh |
Farbkorrigiertes F-Theta-Objektiv für die Lasermaterialbearbeitung
|
|
KR101407076B1
(ko)
*
|
2012-05-24 |
2014-06-13 |
주식회사 비엘시스템 |
근적외선을 이용한 인쇄판 프린터용 고해상도 노광장치
|
|
US8701052B1
(en)
|
2013-01-23 |
2014-04-15 |
United Microelectronics Corp. |
Method of optical proximity correction in combination with double patterning technique
|
|
US8627242B1
(en)
|
2013-01-30 |
2014-01-07 |
United Microelectronics Corp. |
Method for making photomask layout
|
|
JP5664697B2
(ja)
*
|
2013-05-13 |
2015-02-04 |
株式会社ニコン |
反射屈折型の投影光学系、露光装置、および露光方法
|
|
US9230812B2
(en)
|
2013-05-22 |
2016-01-05 |
United Microelectronics Corp. |
Method for forming semiconductor structure having opening
|
|
CN103499876B
(zh)
*
|
2013-10-10 |
2015-07-29 |
中国科学院光电技术研究所 |
一种大数值孔径的纯折射式投影光学系统
|
|
DE102017106837B4
(de)
*
|
2017-03-30 |
2023-02-23 |
Carl Zeiss Jena Gmbh |
Linsensystem für ein Makroobjektiv für den industriellen Einsatz bei der Qualitätssicherung im Produktionsprozess, Makroobjektiv sowie System
|
|
DE102017207582A1
(de)
*
|
2017-05-05 |
2018-11-08 |
Carl Zeiss Smt Gmbh |
Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren
|
|
CN109581622B
(zh)
|
2017-09-29 |
2020-12-04 |
上海微电子装备(集团)股份有限公司 |
一种投影物镜
|
|
CN113900227B
(zh)
*
|
2021-10-09 |
2022-07-05 |
中国科学院苏州生物医学工程技术研究所 |
一种大视场高分辨宽波段的物镜
|
|
CN114563866B
(zh)
*
|
2022-03-14 |
2024-02-20 |
北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) |
投影物镜系统
|
|
DE102023204235A1
(de)
*
|
2023-05-08 |
2024-11-14 |
Carl Zeiss Smt Gmbh |
Lithographiesystem mit abspaltbaren Linsen
|
|
CN120065480B
(zh)
*
|
2025-04-30 |
2025-08-05 |
长春智冉光电科技有限公司 |
一种深紫外干湿两用投影物镜及方法
|