JP2005509273A5 - - Google Patents

Download PDF

Info

Publication number
JP2005509273A5
JP2005509273A5 JP2002588620A JP2002588620A JP2005509273A5 JP 2005509273 A5 JP2005509273 A5 JP 2005509273A5 JP 2002588620 A JP2002588620 A JP 2002588620A JP 2002588620 A JP2002588620 A JP 2002588620A JP 2005509273 A5 JP2005509273 A5 JP 2005509273A5
Authority
JP
Japan
Prior art keywords
bipolar transistor
region
active region
doped
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002588620A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005509273A (ja
Filing date
Publication date
Priority claimed from SE0101567A external-priority patent/SE522527C2/sv
Priority claimed from SE0103036A external-priority patent/SE0103036D0/xx
Application filed filed Critical
Publication of JP2005509273A publication Critical patent/JP2005509273A/ja
Publication of JP2005509273A5 publication Critical patent/JP2005509273A5/ja
Pending legal-status Critical Current

Links

JP2002588620A 2001-05-04 2002-04-29 半導体プロセスおよび集積回路 Pending JP2005509273A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0101567A SE522527C2 (sv) 2001-05-04 2001-05-04 Halvledarprocess och integrerad krets
SE0103036A SE0103036D0 (sv) 2001-05-04 2001-09-13 Semiconductor process and integrated circuit
PCT/SE2002/000838 WO2002091463A1 (en) 2001-05-04 2002-04-29 Semiconductor process and integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008332746A Division JP2009141375A (ja) 2001-05-04 2008-12-26 半導体プロセスおよび集積回路

Publications (2)

Publication Number Publication Date
JP2005509273A JP2005509273A (ja) 2005-04-07
JP2005509273A5 true JP2005509273A5 (enExample) 2005-12-22

Family

ID=26655455

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002588620A Pending JP2005509273A (ja) 2001-05-04 2002-04-29 半導体プロセスおよび集積回路
JP2008332746A Pending JP2009141375A (ja) 2001-05-04 2008-12-26 半導体プロセスおよび集積回路

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008332746A Pending JP2009141375A (ja) 2001-05-04 2008-12-26 半導体プロセスおよび集積回路

Country Status (7)

Country Link
US (2) US20050020003A1 (enExample)
EP (1) EP1384258A1 (enExample)
JP (2) JP2005509273A (enExample)
KR (1) KR100918716B1 (enExample)
CN (1) CN1328782C (enExample)
SE (1) SE0103036D0 (enExample)
WO (1) WO2002091463A1 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849518B2 (en) * 2002-05-07 2005-02-01 Intel Corporation Dual trench isolation using single critical lithographic patterning
KR100538810B1 (ko) * 2003-12-29 2005-12-23 주식회사 하이닉스반도체 반도체소자의 소자분리 방법
SE527487C2 (sv) * 2004-03-02 2006-03-21 Infineon Technologies Ag En metod för framställning av en kondensator och en monolitiskt integrerad krets innefattande en sådan kondensator
JP2006049685A (ja) * 2004-08-06 2006-02-16 Sanyo Electric Co Ltd 半導体装置の製造方法
WO2006018974A1 (ja) * 2004-08-17 2006-02-23 Rohm Co., Ltd. 半導体装置およびその製造方法
EP1630863B1 (en) 2004-08-31 2014-05-14 Infineon Technologies AG Method of fabricating a monolithically integrated vertical semiconducting device in an soi substrate
WO2006025037A1 (en) * 2004-09-02 2006-03-09 Koninklijke Philips Electronics, N.V. Contacting and filling deep-trench-isolation with tungsten
EP1646084A1 (en) 2004-10-06 2006-04-12 Infineon Technologies AG A method in the fabrication of an integrated injection logic circuit
US7638385B2 (en) * 2005-05-02 2009-12-29 Semiconductor Components Industries, Llc Method of forming a semiconductor device and structure therefor
US20070069295A1 (en) * 2005-09-28 2007-03-29 Kerr Daniel C Process to integrate fabrication of bipolar devices into a CMOS process flow
US20070158779A1 (en) * 2006-01-12 2007-07-12 International Business Machines Corporation Methods and semiconductor structures for latch-up suppression using a buried damage layer
US7648869B2 (en) * 2006-01-12 2010-01-19 International Business Machines Corporation Method of fabricating semiconductor structures for latch-up suppression
US7276768B2 (en) * 2006-01-26 2007-10-02 International Business Machines Corporation Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures
US7491618B2 (en) * 2006-01-26 2009-02-17 International Business Machines Corporation Methods and semiconductor structures for latch-up suppression using a conductive region
US20070194403A1 (en) * 2006-02-23 2007-08-23 International Business Machines Corporation Methods for fabricating semiconductor device structures with reduced susceptibility to latch-up and semiconductor device structures formed by the methods
US7439119B2 (en) * 2006-02-24 2008-10-21 Agere Systems Inc. Thermally stable BiCMOS fabrication method and bipolar junction transistors formed according to the method
JP2007266491A (ja) * 2006-03-29 2007-10-11 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
US7629676B2 (en) 2006-09-07 2009-12-08 Infineon Technologies Ag Semiconductor component having a semiconductor die and a leadframe
US7754513B2 (en) * 2007-02-28 2010-07-13 International Business Machines Corporation Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures
US7818702B2 (en) * 2007-02-28 2010-10-19 International Business Machines Corporation Structure incorporating latch-up resistant semiconductor device structures on hybrid substrates
KR20090051894A (ko) * 2007-11-20 2009-05-25 주식회사 동부하이텍 반도체 소자의 제조 방법
DE102008062693B4 (de) * 2008-12-17 2017-02-09 Texas Instruments Deutschland Gmbh Halbleiterbauelement und Verfahren zu dessen Herstellung
GB2479372B (en) 2010-04-07 2013-07-24 Ge Aviat Systems Ltd Power switches for aircraft
CN102270576A (zh) * 2011-09-01 2011-12-07 上海宏力半导体制造有限公司 Mos晶体管制造方法
KR101821413B1 (ko) * 2011-09-26 2018-01-24 매그나칩 반도체 유한회사 소자분리구조물, 이를 포함하는 반도체 소자 및 그의 소자분리 구조물 제조 방법
US8956938B2 (en) 2012-05-16 2015-02-17 International Business Machines Corporation Epitaxial semiconductor resistor with semiconductor structures on same substrate
US9076863B2 (en) * 2013-07-17 2015-07-07 Texas Instruments Incorporated Semiconductor structure with a doped region between two deep trench isolation structures
US10468484B2 (en) * 2014-05-21 2019-11-05 Analog Devices Global Bipolar transistor
CN104269413B (zh) 2014-09-22 2017-08-11 京东方科技集团股份有限公司 阵列基板及其制作方法、液晶显示装置
US9502283B2 (en) * 2015-02-20 2016-11-22 Qualcomm Incorporated Electron-beam (E-beam) based semiconductor device features
US9768218B2 (en) * 2015-08-26 2017-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned back side deep trench isolation structure
US10128113B2 (en) * 2016-01-12 2018-11-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9825157B1 (en) * 2016-06-29 2017-11-21 Globalfoundries Inc. Heterojunction bipolar transistor with stress component
US9923083B1 (en) 2016-09-09 2018-03-20 International Business Machines Corporation Embedded endpoint fin reveal
CN110416152A (zh) * 2019-07-26 2019-11-05 上海华虹宏力半导体制造有限公司 深槽隔离结构及工艺方法
CN115166461A (zh) * 2022-06-30 2022-10-11 上海积塔半导体有限公司 测试器件结构单元、并行测试器件结构及晶圆

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622735A (en) * 1980-12-12 1986-11-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
JPS5872139A (ja) * 1981-10-26 1983-04-30 Tokyo Ohka Kogyo Co Ltd 感光性材料
US5280188A (en) * 1985-03-07 1994-01-18 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors
US4789995A (en) * 1987-05-01 1988-12-06 Silicon Systems Inc. Synchronous timer anti-alias filter and gain stage
US5006476A (en) * 1988-09-07 1991-04-09 North American Philips Corp., Signetics Division Transistor manufacturing process using three-step base doping
US5015594A (en) * 1988-10-24 1991-05-14 International Business Machines Corporation Process of making BiCMOS devices having closely spaced device regions
US4997776A (en) * 1989-03-06 1991-03-05 International Business Machines Corp. Complementary bipolar transistor structure and method for manufacture
US5171702A (en) * 1989-07-21 1992-12-15 Texas Instruments Incorporated Method for forming a thick base oxide in a BiCMOS process
JPH03196562A (ja) * 1989-12-26 1991-08-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5124271A (en) * 1990-06-20 1992-06-23 Texas Instruments Incorporated Process for fabricating a BiCMOS integrated circuit
GB2248142A (en) * 1990-09-19 1992-03-25 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
JP2748988B2 (ja) * 1991-03-13 1998-05-13 三菱電機株式会社 半導体装置とその製造方法
US5187109A (en) * 1991-07-19 1993-02-16 International Business Machines Corporation Lateral bipolar transistor and method of making the same
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices
JP2740087B2 (ja) * 1992-08-15 1998-04-15 株式会社東芝 半導体集積回路装置の製造方法
JPH07106412A (ja) * 1993-10-07 1995-04-21 Toshiba Corp 半導体装置およびその製造方法
JPH07176621A (ja) * 1993-12-17 1995-07-14 Hitachi Ltd 半導体装置及びその製造方法
JPH07335774A (ja) * 1994-06-03 1995-12-22 Sony Corp ＢｉＭＯＳ半導体装置及びその製造方法
US5620908A (en) * 1994-09-19 1997-04-15 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device comprising BiCMOS transistor
JPH09115998A (ja) * 1995-10-16 1997-05-02 Toshiba Corp 半導体集積回路の素子分離構造及び素子分離方法
US6077752A (en) * 1995-11-20 2000-06-20 Telefonaktiebolaget Lm Ericsson Method in the manufacturing of a semiconductor device
JPH09252061A (ja) * 1996-03-15 1997-09-22 Toshiba Corp 半導体装置及びその製造方法
JP3583228B2 (ja) * 1996-06-07 2004-11-04 株式会社ルネサステクノロジ 半導体装置およびその製造方法
FR2756103B1 (fr) * 1996-11-19 1999-05-14 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos et d'un condensateur
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
FR2758004B1 (fr) * 1996-12-27 1999-03-05 Sgs Thomson Microelectronics Transistor bipolaire a isolement dielectrique
SE520173C2 (sv) * 1997-04-29 2003-06-03 Ericsson Telefon Ab L M Förfarande för tillverkning av en kondensator i en integrerad krets
JP3919885B2 (ja) * 1997-06-18 2007-05-30 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3189743B2 (ja) * 1997-06-26 2001-07-16 日本電気株式会社 半導体集積回路装置及びその製造方法
CN1263637A (zh) * 1997-07-11 2000-08-16 艾利森电话股份有限公司 制作用于射频的集成电路器件的工艺
SE511891C2 (sv) * 1997-08-29 1999-12-13 Ericsson Telefon Ab L M Bipolär effekttransistor och framställningsförfarande
US6137154A (en) * 1998-02-02 2000-10-24 Motorola, Inc. Bipolar transistor with increased early voltage
FR2779572B1 (fr) * 1998-06-05 2003-10-17 St Microelectronics Sa Transistor bipolaire vertical a faible bruit et procede de fabrication correspondant
US6611044B2 (en) * 1998-09-11 2003-08-26 Koninklijke Philips Electronics N.V. Lateral bipolar transistor and method of making same
JP2000124336A (ja) 1998-10-12 2000-04-28 Sony Corp 半導体装置及び半導体装置の製造方法
EP1037284A3 (en) * 1999-03-15 2002-10-30 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor and method for fabricating the same
US6432791B1 (en) * 1999-04-14 2002-08-13 Texas Instruments Incorporated Integrated circuit capacitor and method
JP2000311958A (ja) * 1999-04-27 2000-11-07 Hitachi Ltd 半導体集積回路装置の製造方法
US6043130A (en) * 1999-05-17 2000-03-28 National Semiconductor Corporation Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6351021B1 (en) 1999-07-01 2002-02-26 Intersil Americas Inc. Low temperature coefficient resistor (TCRL)
WO2001004960A1 (en) * 1999-07-07 2001-01-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for the same manufacturing
CN1252809C (zh) 1999-09-17 2006-04-19 因芬尼昂技术股份公司 在浅槽中形成深槽以隔离半导体器件的自对准方法
JP3748744B2 (ja) * 1999-10-18 2006-02-22 Ｎｅｃエレクトロニクス株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JP2005509273A5 (enExample)
CN102104062B (zh) 双极晶体管
KR101228367B1 (ko) 바이폴라 트랜지스터와 그 제조 방법
KR20020019560A (ko) 바이폴라 트랜지스터 및 그 제조방법
US20040048428A1 (en) Semiconductor device and method of manufacturing the same
US8946041B2 (en) Methods for forming high gain tunable bipolar transistors
US6180442B1 (en) Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method
US20030080394A1 (en) Control of dopant diffusion from polysilicon emitters in bipolar integrated circuits
JP5558243B2 (ja) 半導体装置
CN100463217C (zh) 制备窄掺杂剖面高性能半导体器件的结构和方法
US7772100B2 (en) Method of manufacturing a semiconductor device having a buried doped region
JP2005510867A (ja) 半導体デバイスおよび該半導体デバイスの製造方法
CN102117749A (zh) 双极晶体管的集电区和集电区埋层的制造工艺方法
TWI576989B (zh) 集成高壓器件的方法
US20130099288A1 (en) SiGe HBT and Manufacturing Method Thereof
US6774455B2 (en) Semiconductor device with a collector contact in a depressed well-region
KR100482950B1 (ko) 반도체소자 및 그 제조방법
KR100263790B1 (ko) 반도체 장치 및 그 제조방법
US10079294B2 (en) Integrated JFET structure with implanted backgate
KR101762048B1 (ko) 반도체 장치 및 그 제조 방법
US6847094B2 (en) Contact structure on a deep region formed in a semiconductor substrate
CN112509983B (zh) 半导体器件及其制造方法
EP0718891B1 (en) High performance, high voltage non-epi bipolar transistor
KR100395159B1 (ko) 규소게르마늄을 이용한 바이씨모스 소자 제조 방법
US12532537B2 (en) Semiconductor device with a deep trench isolation structure and buried layers for reducing substrate leakage current and avoiding latch-up effect, and fabrication method thereof