SE0103036D0 - Semiconductor process and integrated circuit - Google Patents

Semiconductor process and integrated circuit

Info

Publication number
SE0103036D0
SE0103036D0 SE0103036A SE0103036A SE0103036D0 SE 0103036 D0 SE0103036 D0 SE 0103036D0 SE 0103036 A SE0103036 A SE 0103036A SE 0103036 A SE0103036 A SE 0103036A SE 0103036 D0 SE0103036 D0 SE 0103036D0
Authority
SE
Sweden
Prior art keywords
substrate
trench
bipolar transistor
epitaxially grown
silicon layer
Prior art date
Application number
SE0103036A
Other languages
English (en)
Swedish (sv)
Inventor
Ted Johansson
Hans Norstroem
Patrik Algotsson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SE0101567A external-priority patent/SE522527C2/sv
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0103036A priority Critical patent/SE0103036D0/xx
Publication of SE0103036D0 publication Critical patent/SE0103036D0/xx
Priority to CNB02809395XA priority patent/CN1328782C/zh
Priority to PCT/SE2002/000838 priority patent/WO2002091463A1/en
Priority to EP02728284A priority patent/EP1384258A1/en
Priority to JP2002588620A priority patent/JP2005509273A/ja
Priority to KR1020037013854A priority patent/KR100918716B1/ko
Priority to US10/699,222 priority patent/US20050020003A1/en
Priority to JP2008332746A priority patent/JP2009141375A/ja
Priority to US12/561,628 priority patent/US20100055860A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
SE0103036A 2001-05-04 2001-09-13 Semiconductor process and integrated circuit SE0103036D0 (sv)

Priority Applications (9)

Application Number Priority Date Filing Date Title
SE0103036A SE0103036D0 (sv) 2001-05-04 2001-09-13 Semiconductor process and integrated circuit
CNB02809395XA CN1328782C (zh) 2001-05-04 2002-04-29 半导体工艺与集成电路
PCT/SE2002/000838 WO2002091463A1 (en) 2001-05-04 2002-04-29 Semiconductor process and integrated circuit
EP02728284A EP1384258A1 (en) 2001-05-04 2002-04-29 Semiconductor process and integrated circuit
JP2002588620A JP2005509273A (ja) 2001-05-04 2002-04-29 半導体プロセスおよび集積回路
KR1020037013854A KR100918716B1 (ko) 2001-05-04 2002-04-29 반도체 공정 및 집적회로
US10/699,222 US20050020003A1 (en) 2001-05-04 2003-10-31 Semiconductor process and integrated circuit
JP2008332746A JP2009141375A (ja) 2001-05-04 2008-12-26 半導体プロセスおよび集積回路
US12/561,628 US20100055860A1 (en) 2001-05-04 2009-09-17 Semiconductor Process and Integrated Circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0101567A SE522527C2 (sv) 2001-05-04 2001-05-04 Halvledarprocess och integrerad krets
SE0103036A SE0103036D0 (sv) 2001-05-04 2001-09-13 Semiconductor process and integrated circuit

Publications (1)

Publication Number Publication Date
SE0103036D0 true SE0103036D0 (sv) 2001-09-13

Family

ID=26655455

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0103036A SE0103036D0 (sv) 2001-05-04 2001-09-13 Semiconductor process and integrated circuit

Country Status (7)

Country Link
US (2) US20050020003A1 (enExample)
EP (1) EP1384258A1 (enExample)
JP (2) JP2005509273A (enExample)
KR (1) KR100918716B1 (enExample)
CN (1) CN1328782C (enExample)
SE (1) SE0103036D0 (enExample)
WO (1) WO2002091463A1 (enExample)

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Also Published As

Publication number Publication date
US20100055860A1 (en) 2010-03-04
CN1507656A (zh) 2004-06-23
EP1384258A1 (en) 2004-01-28
WO2002091463A1 (en) 2002-11-14
JP2009141375A (ja) 2009-06-25
KR100918716B1 (ko) 2009-09-24
CN1328782C (zh) 2007-07-25
KR20030092097A (ko) 2003-12-03
US20050020003A1 (en) 2005-01-27
JP2005509273A (ja) 2005-04-07

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