CN102270576A - Mos晶体管制造方法 - Google Patents
Mos晶体管制造方法 Download PDFInfo
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- CN102270576A CN102270576A CN2011102574524A CN201110257452A CN102270576A CN 102270576 A CN102270576 A CN 102270576A CN 2011102574524 A CN2011102574524 A CN 2011102574524A CN 201110257452 A CN201110257452 A CN 201110257452A CN 102270576 A CN102270576 A CN 102270576A
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- mos transistor
- manufacture method
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- etching
- transistor manufacture
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CN2011102574524A CN102270576A (zh) | 2011-09-01 | 2011-09-01 | Mos晶体管制造方法 |
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CN2011102574524A CN102270576A (zh) | 2011-09-01 | 2011-09-01 | Mos晶体管制造方法 |
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CN102270576A true CN102270576A (zh) | 2011-12-07 |
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CN2011102574524A Pending CN102270576A (zh) | 2011-09-01 | 2011-09-01 | Mos晶体管制造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102945809A (zh) * | 2012-11-30 | 2013-02-27 | 上海宏力半导体制造有限公司 | 漂移区的形成方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101005037A (zh) * | 2006-12-21 | 2007-07-25 | 上海集成电路研发中心有限公司 | 一种半导体器件制造方法 |
JP2009004736A (ja) * | 2007-03-16 | 2009-01-08 | Semiconductor Energy Lab Co Ltd | 半導体装置、半導体表示装置及び半導体表示装置の作製方法 |
US20100055860A1 (en) * | 2001-05-04 | 2010-03-04 | Infineon Technologies Ag | Semiconductor Process and Integrated Circuit |
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2011
- 2011-09-01 CN CN2011102574524A patent/CN102270576A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100055860A1 (en) * | 2001-05-04 | 2010-03-04 | Infineon Technologies Ag | Semiconductor Process and Integrated Circuit |
CN101005037A (zh) * | 2006-12-21 | 2007-07-25 | 上海集成电路研发中心有限公司 | 一种半导体器件制造方法 |
JP2009004736A (ja) * | 2007-03-16 | 2009-01-08 | Semiconductor Energy Lab Co Ltd | 半導体装置、半導体表示装置及び半導体表示装置の作製方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102945809A (zh) * | 2012-11-30 | 2013-02-27 | 上海宏力半导体制造有限公司 | 漂移区的形成方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140430 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140430 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20111207 |
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RJ01 | Rejection of invention patent application after publication |