JP2005509273A - 半導体プロセスおよび集積回路 - Google Patents

半導体プロセスおよび集積回路 Download PDF

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Publication number
JP2005509273A
JP2005509273A JP2002588620A JP2002588620A JP2005509273A JP 2005509273 A JP2005509273 A JP 2005509273A JP 2002588620 A JP2002588620 A JP 2002588620A JP 2002588620 A JP2002588620 A JP 2002588620A JP 2005509273 A JP2005509273 A JP 2005509273A
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Japan
Prior art keywords
region
bipolar transistor
active region
layer
substrate
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Pending
Application number
JP2002588620A
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English (en)
Japanese (ja)
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JP2005509273A5 (enExample
Inventor
ヨハンソン、テッド
ノルストレム、ハンス
アルゴトソン、パトリク
Original Assignee
インフィネオン テクノロジーズ アクチェンゲゼルシャフト
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Priority claimed from SE0101567A external-priority patent/SE522527C2/sv
Application filed by インフィネオン テクノロジーズ アクチェンゲゼルシャフト filed Critical インフィネオン テクノロジーズ アクチェンゲゼルシャフト
Publication of JP2005509273A publication Critical patent/JP2005509273A/ja
Publication of JP2005509273A5 publication Critical patent/JP2005509273A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2002588620A 2001-05-04 2002-04-29 半導体プロセスおよび集積回路 Pending JP2005509273A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0101567A SE522527C2 (sv) 2001-05-04 2001-05-04 Halvledarprocess och integrerad krets
SE0103036A SE0103036D0 (sv) 2001-05-04 2001-09-13 Semiconductor process and integrated circuit
PCT/SE2002/000838 WO2002091463A1 (en) 2001-05-04 2002-04-29 Semiconductor process and integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008332746A Division JP2009141375A (ja) 2001-05-04 2008-12-26 半導体プロセスおよび集積回路

Publications (2)

Publication Number Publication Date
JP2005509273A true JP2005509273A (ja) 2005-04-07
JP2005509273A5 JP2005509273A5 (enExample) 2005-12-22

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002588620A Pending JP2005509273A (ja) 2001-05-04 2002-04-29 半導体プロセスおよび集積回路
JP2008332746A Pending JP2009141375A (ja) 2001-05-04 2008-12-26 半導体プロセスおよび集積回路

Family Applications After (1)

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JP2008332746A Pending JP2009141375A (ja) 2001-05-04 2008-12-26 半導体プロセスおよび集積回路

Country Status (7)

Country Link
US (2) US20050020003A1 (enExample)
EP (1) EP1384258A1 (enExample)
JP (2) JP2005509273A (enExample)
KR (1) KR100918716B1 (enExample)
CN (1) CN1328782C (enExample)
SE (1) SE0103036D0 (enExample)
WO (1) WO2002091463A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP2007266491A (ja) * 2006-03-29 2007-10-11 Fujitsu Ltd 半導体装置の製造方法及び半導体装置

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP2007266491A (ja) * 2006-03-29 2007-10-11 Fujitsu Ltd 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
US20100055860A1 (en) 2010-03-04
CN1507656A (zh) 2004-06-23
EP1384258A1 (en) 2004-01-28
WO2002091463A1 (en) 2002-11-14
JP2009141375A (ja) 2009-06-25
KR100918716B1 (ko) 2009-09-24
CN1328782C (zh) 2007-07-25
SE0103036D0 (sv) 2001-09-13
KR20030092097A (ko) 2003-12-03
US20050020003A1 (en) 2005-01-27

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