KR100918716B1 - 반도체 공정 및 집적회로 - Google Patents

반도체 공정 및 집적회로 Download PDF

Info

Publication number
KR100918716B1
KR100918716B1 KR1020037013854A KR20037013854A KR100918716B1 KR 100918716 B1 KR100918716 B1 KR 100918716B1 KR 1020037013854 A KR1020037013854 A KR 1020037013854A KR 20037013854 A KR20037013854 A KR 20037013854A KR 100918716 B1 KR100918716 B1 KR 100918716B1
Authority
KR
South Korea
Prior art keywords
active region
region
doped
layer
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020037013854A
Other languages
English (en)
Korean (ko)
Other versions
KR20030092097A (ko
Inventor
요한슨테드
노르스트룀한스
알고트슨파트릭
Original Assignee
인피니언 테크놀로지스 에이지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SE0101567A external-priority patent/SE522527C2/sv
Application filed by 인피니언 테크놀로지스 에이지 filed Critical 인피니언 테크놀로지스 에이지
Publication of KR20030092097A publication Critical patent/KR20030092097A/ko
Application granted granted Critical
Publication of KR100918716B1 publication Critical patent/KR100918716B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020037013854A 2001-05-04 2002-04-29 반도체 공정 및 집적회로 Expired - Fee Related KR100918716B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
SE0101567-6 2001-05-04
SE0101567A SE522527C2 (sv) 2001-05-04 2001-05-04 Halvledarprocess och integrerad krets
SE0103036A SE0103036D0 (sv) 2001-05-04 2001-09-13 Semiconductor process and integrated circuit
SE0103036-0 2001-09-13
PCT/SE2002/000838 WO2002091463A1 (en) 2001-05-04 2002-04-29 Semiconductor process and integrated circuit

Publications (2)

Publication Number Publication Date
KR20030092097A KR20030092097A (ko) 2003-12-03
KR100918716B1 true KR100918716B1 (ko) 2009-09-24

Family

ID=26655455

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037013854A Expired - Fee Related KR100918716B1 (ko) 2001-05-04 2002-04-29 반도체 공정 및 집적회로

Country Status (7)

Country Link
US (2) US20050020003A1 (enExample)
EP (1) EP1384258A1 (enExample)
JP (2) JP2005509273A (enExample)
KR (1) KR100918716B1 (enExample)
CN (1) CN1328782C (enExample)
SE (1) SE0103036D0 (enExample)
WO (1) WO2002091463A1 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849518B2 (en) * 2002-05-07 2005-02-01 Intel Corporation Dual trench isolation using single critical lithographic patterning
KR100538810B1 (ko) * 2003-12-29 2005-12-23 주식회사 하이닉스반도체 반도체소자의 소자분리 방법
SE527487C2 (sv) * 2004-03-02 2006-03-21 Infineon Technologies Ag En metod för framställning av en kondensator och en monolitiskt integrerad krets innefattande en sådan kondensator
JP2006049685A (ja) * 2004-08-06 2006-02-16 Sanyo Electric Co Ltd 半導体装置の製造方法
WO2006018974A1 (ja) * 2004-08-17 2006-02-23 Rohm Co., Ltd. 半導体装置およびその製造方法
EP1630863B1 (en) 2004-08-31 2014-05-14 Infineon Technologies AG Method of fabricating a monolithically integrated vertical semiconducting device in an soi substrate
WO2006025037A1 (en) * 2004-09-02 2006-03-09 Koninklijke Philips Electronics, N.V. Contacting and filling deep-trench-isolation with tungsten
EP1646084A1 (en) 2004-10-06 2006-04-12 Infineon Technologies AG A method in the fabrication of an integrated injection logic circuit
US7638385B2 (en) * 2005-05-02 2009-12-29 Semiconductor Components Industries, Llc Method of forming a semiconductor device and structure therefor
US20070069295A1 (en) * 2005-09-28 2007-03-29 Kerr Daniel C Process to integrate fabrication of bipolar devices into a CMOS process flow
US20070158779A1 (en) * 2006-01-12 2007-07-12 International Business Machines Corporation Methods and semiconductor structures for latch-up suppression using a buried damage layer
US7648869B2 (en) * 2006-01-12 2010-01-19 International Business Machines Corporation Method of fabricating semiconductor structures for latch-up suppression
US7276768B2 (en) * 2006-01-26 2007-10-02 International Business Machines Corporation Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures
US7491618B2 (en) * 2006-01-26 2009-02-17 International Business Machines Corporation Methods and semiconductor structures for latch-up suppression using a conductive region
US20070194403A1 (en) * 2006-02-23 2007-08-23 International Business Machines Corporation Methods for fabricating semiconductor device structures with reduced susceptibility to latch-up and semiconductor device structures formed by the methods
US7439119B2 (en) * 2006-02-24 2008-10-21 Agere Systems Inc. Thermally stable BiCMOS fabrication method and bipolar junction transistors formed according to the method
JP2007266491A (ja) * 2006-03-29 2007-10-11 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
US7629676B2 (en) 2006-09-07 2009-12-08 Infineon Technologies Ag Semiconductor component having a semiconductor die and a leadframe
US7754513B2 (en) * 2007-02-28 2010-07-13 International Business Machines Corporation Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures
US7818702B2 (en) * 2007-02-28 2010-10-19 International Business Machines Corporation Structure incorporating latch-up resistant semiconductor device structures on hybrid substrates
KR20090051894A (ko) * 2007-11-20 2009-05-25 주식회사 동부하이텍 반도체 소자의 제조 방법
DE102008062693B4 (de) * 2008-12-17 2017-02-09 Texas Instruments Deutschland Gmbh Halbleiterbauelement und Verfahren zu dessen Herstellung
GB2479372B (en) 2010-04-07 2013-07-24 Ge Aviat Systems Ltd Power switches for aircraft
CN102270576A (zh) * 2011-09-01 2011-12-07 上海宏力半导体制造有限公司 Mos晶体管制造方法
KR101821413B1 (ko) * 2011-09-26 2018-01-24 매그나칩 반도체 유한회사 소자분리구조물, 이를 포함하는 반도체 소자 및 그의 소자분리 구조물 제조 방법
US8956938B2 (en) 2012-05-16 2015-02-17 International Business Machines Corporation Epitaxial semiconductor resistor with semiconductor structures on same substrate
US9076863B2 (en) * 2013-07-17 2015-07-07 Texas Instruments Incorporated Semiconductor structure with a doped region between two deep trench isolation structures
US10468484B2 (en) * 2014-05-21 2019-11-05 Analog Devices Global Bipolar transistor
CN104269413B (zh) 2014-09-22 2017-08-11 京东方科技集团股份有限公司 阵列基板及其制作方法、液晶显示装置
US9502283B2 (en) * 2015-02-20 2016-11-22 Qualcomm Incorporated Electron-beam (E-beam) based semiconductor device features
US9768218B2 (en) * 2015-08-26 2017-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned back side deep trench isolation structure
US10128113B2 (en) * 2016-01-12 2018-11-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9825157B1 (en) * 2016-06-29 2017-11-21 Globalfoundries Inc. Heterojunction bipolar transistor with stress component
US9923083B1 (en) 2016-09-09 2018-03-20 International Business Machines Corporation Embedded endpoint fin reveal
CN110416152A (zh) * 2019-07-26 2019-11-05 上海华虹宏力半导体制造有限公司 深槽隔离结构及工艺方法
CN115166461A (zh) * 2022-06-30 2022-10-11 上海积塔半导体有限公司 测试器件结构单元、并行测试器件结构及晶圆

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177717B1 (en) * 1998-06-05 2001-01-23 Stmicroelectronics, S.A. Low-noise vertical bipolar transistor and corresponding fabrication process

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622735A (en) * 1980-12-12 1986-11-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
JPS5872139A (ja) * 1981-10-26 1983-04-30 Tokyo Ohka Kogyo Co Ltd 感光性材料
US5280188A (en) * 1985-03-07 1994-01-18 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors
US4789995A (en) * 1987-05-01 1988-12-06 Silicon Systems Inc. Synchronous timer anti-alias filter and gain stage
US5006476A (en) * 1988-09-07 1991-04-09 North American Philips Corp., Signetics Division Transistor manufacturing process using three-step base doping
US5015594A (en) * 1988-10-24 1991-05-14 International Business Machines Corporation Process of making BiCMOS devices having closely spaced device regions
US4997776A (en) * 1989-03-06 1991-03-05 International Business Machines Corp. Complementary bipolar transistor structure and method for manufacture
US5171702A (en) * 1989-07-21 1992-12-15 Texas Instruments Incorporated Method for forming a thick base oxide in a BiCMOS process
JPH03196562A (ja) * 1989-12-26 1991-08-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5124271A (en) * 1990-06-20 1992-06-23 Texas Instruments Incorporated Process for fabricating a BiCMOS integrated circuit
GB2248142A (en) * 1990-09-19 1992-03-25 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
JP2748988B2 (ja) * 1991-03-13 1998-05-13 三菱電機株式会社 半導体装置とその製造方法
US5187109A (en) * 1991-07-19 1993-02-16 International Business Machines Corporation Lateral bipolar transistor and method of making the same
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices
JP2740087B2 (ja) * 1992-08-15 1998-04-15 株式会社東芝 半導体集積回路装置の製造方法
JPH07106412A (ja) * 1993-10-07 1995-04-21 Toshiba Corp 半導体装置およびその製造方法
JPH07176621A (ja) * 1993-12-17 1995-07-14 Hitachi Ltd 半導体装置及びその製造方法
JPH07335774A (ja) * 1994-06-03 1995-12-22 Sony Corp ＢｉＭＯＳ半導体装置及びその製造方法
US5620908A (en) * 1994-09-19 1997-04-15 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device comprising BiCMOS transistor
JPH09115998A (ja) * 1995-10-16 1997-05-02 Toshiba Corp 半導体集積回路の素子分離構造及び素子分離方法
US6077752A (en) * 1995-11-20 2000-06-20 Telefonaktiebolaget Lm Ericsson Method in the manufacturing of a semiconductor device
JPH09252061A (ja) * 1996-03-15 1997-09-22 Toshiba Corp 半導体装置及びその製造方法
JP3583228B2 (ja) * 1996-06-07 2004-11-04 株式会社ルネサステクノロジ 半導体装置およびその製造方法
FR2756103B1 (fr) * 1996-11-19 1999-05-14 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos et d'un condensateur
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
FR2758004B1 (fr) * 1996-12-27 1999-03-05 Sgs Thomson Microelectronics Transistor bipolaire a isolement dielectrique
SE520173C2 (sv) * 1997-04-29 2003-06-03 Ericsson Telefon Ab L M Förfarande för tillverkning av en kondensator i en integrerad krets
JP3919885B2 (ja) * 1997-06-18 2007-05-30 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3189743B2 (ja) * 1997-06-26 2001-07-16 日本電気株式会社 半導体集積回路装置及びその製造方法
CN1263637A (zh) * 1997-07-11 2000-08-16 艾利森电话股份有限公司 制作用于射频的集成电路器件的工艺
SE511891C2 (sv) * 1997-08-29 1999-12-13 Ericsson Telefon Ab L M Bipolär effekttransistor och framställningsförfarande
US6137154A (en) * 1998-02-02 2000-10-24 Motorola, Inc. Bipolar transistor with increased early voltage
US6611044B2 (en) * 1998-09-11 2003-08-26 Koninklijke Philips Electronics N.V. Lateral bipolar transistor and method of making same
JP2000124336A (ja) 1998-10-12 2000-04-28 Sony Corp 半導体装置及び半導体装置の製造方法
EP1037284A3 (en) * 1999-03-15 2002-10-30 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor and method for fabricating the same
US6432791B1 (en) * 1999-04-14 2002-08-13 Texas Instruments Incorporated Integrated circuit capacitor and method
JP2000311958A (ja) * 1999-04-27 2000-11-07 Hitachi Ltd 半導体集積回路装置の製造方法
US6043130A (en) * 1999-05-17 2000-03-28 National Semiconductor Corporation Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6351021B1 (en) 1999-07-01 2002-02-26 Intersil Americas Inc. Low temperature coefficient resistor (TCRL)
WO2001004960A1 (en) * 1999-07-07 2001-01-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for the same manufacturing
CN1252809C (zh) 1999-09-17 2006-04-19 因芬尼昂技术股份公司 在浅槽中形成深槽以隔离半导体器件的自对准方法
JP3748744B2 (ja) * 1999-10-18 2006-02-22 Ｎｅｃエレクトロニクス株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177717B1 (en) * 1998-06-05 2001-01-23 Stmicroelectronics, S.A. Low-noise vertical bipolar transistor and corresponding fabrication process

Also Published As

Publication number Publication date
US20100055860A1 (en) 2010-03-04
CN1507656A (zh) 2004-06-23
EP1384258A1 (en) 2004-01-28
WO2002091463A1 (en) 2002-11-14
JP2009141375A (ja) 2009-06-25
CN1328782C (zh) 2007-07-25
SE0103036D0 (sv) 2001-09-13
KR20030092097A (ko) 2003-12-03
US20050020003A1 (en) 2005-01-27
JP2005509273A (ja) 2005-04-07

Similar Documents

Publication Publication Date Title
KR100918716B1 (ko) 반도체 공정 및 집적회로
US6900519B2 (en) Diffused extrinsic base and method for fabrication
US6846710B2 (en) Method for manufacturing self-aligned BiCMOS
US20080318373A1 (en) Method of fabricating self-aligned bipolar transistor having tapered collector
CA2295990A1 (en) A process for manufacturing ic-components to be used at radio frequencies
WO1995023430A1 (en) Bipolar and bicmos structures and methods of fabrication
US8084313B2 (en) Method for forming a bipolar junction transistor and a metal oxide semiconductor field effect transistor
US20030080394A1 (en) Control of dopant diffusion from polysilicon emitters in bipolar integrated circuits
US6461925B1 (en) Method of manufacturing a heterojunction BiCMOS integrated circuit
US7217609B2 (en) Semiconductor fabrication process, lateral PNP transistor, and integrated circuit
US6071763A (en) Method of fabricating layered integrated circuit
US6767797B2 (en) Method of fabricating complementary self-aligned bipolar transistors
US5422290A (en) Method of fabricating BiCMOS structures
EP1065704A2 (en) Low temperature coefficient resistor (TCRL)
US20030157778A1 (en) BiCMOS process with low temperature coefficient resistor (TCRL)
US20040065942A1 (en) Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies
US6774455B2 (en) Semiconductor device with a collector contact in a depressed well-region
JP5563340B2 (ja) 半導体装置
US7008851B2 (en) Silicon-germanium mesa transistor
US7554174B2 (en) Bipolar transistor having semiconductor patterns filling contact windows of an insulating layer
JP2004079726A (ja) 半導体装置および半導体装置の製造方法
WO2003043080A1 (en) Lateral pnp transistor device, integrated circuit, and fabrication process thereof
SE522527C2 (sv) Halvledarprocess och integrerad krets

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20120910

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20130906

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20150904

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20160909

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170917

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170917

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000