TWI576989B - 集成高壓器件的方法 - Google Patents

集成高壓器件的方法 Download PDF

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Publication number
TWI576989B
TWI576989B TW102123105A TW102123105A TWI576989B TW I576989 B TWI576989 B TW I576989B TW 102123105 A TW102123105 A TW 102123105A TW 102123105 A TW102123105 A TW 102123105A TW I576989 B TWI576989 B TW I576989B
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region
conductivity type
well
deep
substrate
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TW102123105A
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TW201401486A (zh
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土子 秀明
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萬國半導體股份有限公司
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Priority claimed from US13/539,360 external-priority patent/US20130069157A1/en
Priority claimed from US13/539,339 external-priority patent/US20130071994A1/en
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Description

集成高壓器件的方法
本發明涉及高壓半導體器件及其製備過程，使工作電壓較高的器件可以與工作電壓較低的器件一起形成在公共基底上，從而提供集成高壓器件和低壓器件的半導體器件及其製備方法，尤其是在半導體器件現有的工藝流程中增加高壓器件的模組化工藝。
比現有器件的額定電壓更高的器件，通常需要集成在現有器件的晶片上，以滿足新應用的需求。在許多情況下，要將電壓較高的器件集成到現有的電壓較低的器件中，需要徹底改變現有的電壓較低的器件的成熟的製備工藝流程和/或製備條件，這會損害現有的低壓器件的性能，器件模組也必須升級。為了避免新技術研發的冗長設計週期以及高成本，我們關注僅需對現有低壓器件的工藝條件做細微更改的技術，從而對現有電壓較低的器件性能產生最小的影響。
一般而言，在BCD（雙極CMOS DMOS）或BiCMOS（雙極CMOS）技術中，最高的工作電壓受到PN結垂直結構的穿通擊穿的局限。這種垂直結擊穿是外延層厚度、摻雜濃度以及結深度的函數。第1A圖表示一種現有的垂直NPN電晶體（VNPN）（圖中沒有表示出N+發射極和P+基極感測器）器件300的示例，形成在由P基底14構成的半導體晶片中。器件300是通過非外延工藝形成的，也就是說器件直接形成在P基底14中，而不用在P基底上方生長一個外延層。因此，輕摻雜的很深的N-型井首先形成在P基底的頂部，如第1A圖所示，在P基底頂部，形成不同的器件結構，例如VNPN電晶體。輕摻雜的深N-型井35形成在P基底14的頂部，而器件300的詳細結構並沒有表示出來。多個N-型井22和P-型井26形成在深N-型井35頂部，構成VNPN器件結構20。P-型井48形成在P基底的頂部，包圍著很深的N型井35，因此作為器件300的絕緣環，隔離半導體晶片的剩餘區域，其他器件就形成在這些區域中。
第1B圖表示另一種現有的垂直NPN電晶體（VNPN）（圖中沒有表示出N+發射極和P+基極）器件301，形成在由P基底14構成的半導體晶片中。器件301的結構除了器件301可選包含N-型掩埋層37之外，其他都與上述第1A圖中所示的器件300的結構類似，N-型掩埋層37形成在深N-型井35底部、在P-型井26的下方附近。在這種情況下，N掩埋層37防止P-型井26和P基底14之間發生增大器件301的最大工作電壓的穿通。控制P-型井26的深度45，使器件301的性能達到最優。然而，P-型井26的底部在N-型掩埋層37的頂部附近，從而限制了垂直擊穿電壓，限制了器件301的工作電壓。
器件300的製備過程從P基底材料14開始，然後輕摻雜N型摻雜物，以便在P基底14的頂部形成深N-型井35。還可選擇，通過在深N-型井35底部，注入高能量、高密度的N-型摻雜物，製備器件301的N-型掩埋層37。然後，在深N-型井35中，形成多個N-型井和P-型井，從基底的頂面開始向下延伸，形成具有特定功能的雙極電晶體或MOSFET。如果在同一個基底上的單獨區域中，集成工作電壓較高的器件，需要徹底改變器件300的製備工藝流程和/條件。如果器件300的製備工藝和製備條件仍然不變的話，將會影響現有器件300的性能和絕緣性。
另一種方法是引入一個較輕摻雜層，降低摻雜濃度和淺P-型井結。例如，Hideaki Tsuchiko在專利申請案US7019377中提出了一種含有高壓蕭特基位障（Schottky barrier）二極體和低壓器件的積體電路。蕭特基位障二極體包括一個輕摻雜的淺P-型井，作為保護環，利用標準的、較重摻雜的較深的P-型井製備低壓器件。通過包括輕摻雜的淺P-型井以及增加厚度的N-型外延層等工藝，提高高壓器件的穿通擊穿電壓，進而提高最大工作電壓。每種方法都可以使擊穿電壓升高15V至30V。利用這兩種方法製備的蕭特基位障二極體，可以使擊穿電壓升高30V至60V，而不會顯著影響其他器件和結構的性能。
將這兩種方法和器件佈局相結合，可以在同一個晶片上集成高壓和低壓器件。然而，這些方法經常對現有的器件性能有輕微影響。這些器件需要對SPICE模組進行微調。因此，十分有必要研發一種新技術，僅需要在現有的低壓工藝流程中插入幾個步驟，而不會對低壓器件的性能產生影響，就可以將高壓器件集成到低壓晶片中。
本發明提出了一種在半導體基底上，製備雙極電晶體、MOSFET、二極體等多種主動器件的方法，使工作電壓較高的主動器件可以和工作電壓較低的主動器件一起形成在一個共同基底上，並且引入製備工作電壓較低的主動器件現有的成熟的工藝流程。
本發明還提出了一種通過在現有器件的原有製備工藝中增加一些步驟，無需改變器件性能，就能用於工作電壓高於現有器件的器件製備方法。確切地說，該方法包括製備第一導電類型的基底材料；製備第二導電類型的深掩埋區，包括一個輕摻雜區和一個重摻雜區，對高壓器件來說，重摻雜區被基底上方的輕摻雜區包圍；在基底上方，生長一個第一導電類型的外延層；在外延層的頂部，製備第二導電類型的輕摻雜深井；以及製備高壓和低壓器件。
本發明提供的一種用於在半導體基底上製備高壓器件和低壓器件的方法，包括以下步驟：提供一個第一導電類型的半導體基底；在基底的頂面上，生長一個第一導電類型的外延層，其中外延層的摻雜濃度與基底的摻雜濃度相同；在低壓器件區和高壓器件區中，分別製備一個第二導電類型的輕摻雜井，其中形成在低壓器件區中的第二導電類型的輕摻雜井，其深度從外延層的頂面開始到外延層厚度的一半，形成在高壓器件區中的第二導電類型的輕摻雜井，其深度從外延層的頂面開始一直延伸到半導體基底；在高壓器件區域中的輕摻雜井的底部，製備與第一導電類型相反的第二導電類型的深掩埋重摻雜區；並且從輕摻雜井的頂面開始，製備多個摻雜區，在低壓器件區和高壓器件區中，分別製備低壓器件和高壓器件。
上述的方法，在高壓器件區域中的輕摻雜井的底部，製備與第一導電類型相反的第二導電類型的深掩埋重摻雜區，還包括在基底的頂面上生長一個第一導電類型的外延層之前，在高壓器件的區域中半導體基底頂部，製備一個與第一導電類型相反的第二導電類型的深掩埋重摻雜區。
上述的方法，第二導電類型的深掩埋注入區還包括，注入第二導電類型的第一離子，以及第二導電類型的第二離子，第一離子的擴散速度大於第二離子的擴散速度。
上述的方法，製備第二導電類型的深掩埋注入區還包括，一個或多個擴散工藝，擴散第一離子，從而向上延伸，與形成在外延層頂面上的輕摻雜深區合併在一起，構成一個很深的輕摻雜井（很深是相對于形成在外延層頂面上的未與第一離子合併的原輕摻雜井的原始深度而言）。
上述的方法，其中一個或多個熱擴散工藝，還啟動並擴散了基底和外延層之間交界面附近的周圍區域中的第二離子，構成一個被深掩埋輕摻雜區包圍的深掩埋重摻雜區。
上述的方法，在低壓器件區和高壓器件區中的輕摻雜井頂面上，形成多個摻雜區還包括，在深掩埋重摻雜區上方，形成一個第一導電類型的摻雜井，距離深掩埋重摻雜區有一段底部距離，用於控制高壓器件的擊穿。
上述的方法，還包括在高壓器件和低壓器件的主動區(active area)周圍，製備絕緣區。
在一種實施例中，本發明提供一種用於在半導體晶片上製備多個器件的方法，包括以下步驟：提供一個第一導電類型的基底；在第一器件主動區中基底的頂部，注入與第一導電類型相反的第二導電類型的第一和第二離子，第一離子擴散得比第二離子更快；在基底上方，生長一個第一導電類型的外延層；在第一器件和第二器件主動區中各製備一個第二導電類型的輕摻雜井，其深度從外延層的頂面開始到第一器件和第二器件主動區中的外延層厚度的一半；在第一主動區中進行一次或多次熱擴散工藝，使第一離子擴散，向上延伸並且與形成在外延層頂面上的輕摻雜井合併在一起，構成一個很深的輕摻雜井，使第二離子擴散成一個被所述的很深的輕摻雜井包圍著的深掩埋重摻雜區；並且從包圍著深掩埋重摻雜區所述的很深的輕摻雜井的頂面開始，製備一個第一導電類型的第一摻雜井。
上述的方法，還包括調節第一導電類型的第一摻雜井的底部和第二導電類型的深掩埋重摻雜區之間的間距，以設置第一器件的工作電壓。
上述的方法，還包括製備一個第一導電類型的掩埋摻雜區，設置在第二導電類型的深掩埋重摻雜區上方，配置成一個降低表面電場層。
上述的方法，還包括製備絕緣區，包圍著第一器件主動區，在第二器件主動區中的輕摻雜井底部，製備第二導電類型的重摻雜掩埋注入區；並且在第二器件主動區中的重摻雜掩埋注入區上方，輕摻雜井的頂面上，製備第一導電類型的第二摻雜井。
在另一種實施方式中，本發明提供一種設置有第一器件和第二器件的半導體晶片，所述的半導體晶片包括：一個第一導電類型的基底；一個在基底頂面上的第一導電類型的外延層，其中外延層的摻雜濃度與基底的摻雜濃度相同；一個第二導電類型的很深的輕摻雜井，形成於外延層的頂面，延伸到第一器件區域的基底的頂部；以及一個第二導電類型的輕摻雜井，形成於外延層的頂面，深度為第二器件區域的外延層厚度的一半；以及一個第一導電類型的第一摻雜井，形成在第一器件區域中很深的輕摻雜井的頂部，以及一個第一導電類型的第二摻雜井，形成在第二器件區域中的輕摻雜井的頂部；其中第一器件的工作電壓高於第二器件。
上述的半導體晶片，還包括一個與第一導電類型相反的第二導電類型的深掩埋重摻雜區，在基底和外延層之間的交界面處，被第一器件區域中很深的輕摻雜井包圍著，其中第一導電類型的第一摻雜井的底部和第二導電類型很深的重摻雜植入區之間的距離，控制著第一器件的工作電壓。
上述的半導體晶片，第一器件是由一個NPN雙極電晶體構成的，其中第一摻雜井配置成NPN雙極電晶體的基極。
上述的半導體晶片，第一器件是由一個PNP雙極電晶體構成的，第一摻雜井作為PNP雙極電晶體的集電極。
上述的半導體晶片，第一器件是由一個PN二極體構成的，第一摻雜井作為PN二極體的陽極。
上述的半導體晶片，第一器件是由一個N通道DMOS電晶體構成的，第一摻雜井作為DMOS電晶體的基極（或本體區）。
上述的半導體晶片，N通道DMOS電晶體還包括一個第一導電類型的掩埋摻雜區，設置在第二導電類型的深掩埋重摻雜區上方，作為一個降低表面電場層。
上述的半導體晶片，第一器件是由一個P通道DMOS電晶體構成的，第一摻雜井作為DMOS電晶體的汲極。
為使本發明之上述目的、特徵、和優點能更明顯易懂，下文特舉較佳實施例並配合所附圖式做詳細說明。
10、11、300、301．．．器件
101．．．深掩埋區
103．．．N-型井
108、109．．．區域
120．．．器件結構
122、134、22．．．N-型井
123．．．N環
125．．．P環
126、148、26．．．P-型井
127．．．P區
128．．．P+區
13、103．．．N-型井
130．．．重摻雜N+區
134、34．．．N-型井
136．．．掩埋層
137．．．表面電場區
14．．．基底
146．．．掩埋區
148、48．．．P-型井
150．．．絕緣柵極
152．．．場氧化物
154、174．．．N-型井
155．．．汲極接觸傳感區
156、176．．．P-型井
157、175．．．主動區
16．．．外延層
160．．．N區
162．．．P區
177．．．汲極接觸感測器
20．．．器件結構
35．．．N-型井
37．．．N-型掩埋層
400．．．高壓垂直NPN電晶體
410．．．高壓橫向PNP電晶體
420．．．高壓PN二極體
430、450．．．器件
440．．．LDMOS器件
45．．．深度
51．．．間距
200、202、204、206．．．步驟
第1A和1B圖表示利用非外延工藝，在基底上製備現有器件的剖面圖。
第2圖表示依據本發明的一個方面，工作電壓較高的器件與第1A圖所示的工作電壓較低的器件製備在同一個共同基底上的剖面圖。
第3圖表示第2圖所示結構的製備方法的流程圖。
第4圖-第8圖表示在第3圖所示的製備工藝的各個不同的步驟中，第2圖所示的主動器件的剖面圖。
第9圖表示依據本發明，工作電壓較高的垂直NPN雙極電晶體的剖面圖。
第10圖表示依據本發明，工作電壓較高的橫向PNP雙極電晶體的剖面圖。
第11圖表示依據本發明，工作電壓較高的PN二極體的剖面圖。
第12圖表示依據本發明，工作電壓較高的N-通道DMOS的剖面圖。
第13圖表示依據本發明，工作電壓較高的P-通道DMOS的剖面圖。
第14圖表示依據本發明，帶有三重降低表面電場的工作電壓較高的橫向N-通道DMOS的剖面圖。
依據本發明，參見第2圖，額定工作電壓不同的第一器件10和第二器件11形成在一個具有基底14的共同半導體晶片上，外延層16生長在基底14上方。摻雜外延層16，其摻雜的導電類型和濃度都與基底14材料大致相同。對於第2圖所示的VNPN器件10和11（圖中沒有表示出N+發射極和P+基極感測器來），基底14和外延層16為p-型。
器件10的低壓器件結構20形成在基底14中。沒有表示出器件10的詳細結構，輕摻雜的深N-型井35形成在外延層16的頂部。多個N-型井22和P-型井26形成在深N-型井35的頂部，P-型井48形成在外延層16的頂部，包圍著深N-型井35，作為器件結構20的絕緣區。P-型井26和48中的摻雜濃度大於外延層16和基底14。還可選擇，一個n-型摻雜物的掩埋層（圖中未示）形成在深N-型井35的底部，在P-型井26下方附近。
除了器件10具有一個額外的外延層16形成在基底14上方之外，其他都與第1A圖所示的器件300相同。由於外延層16的摻雜濃度與基底14相同，外延層16可以看出是基底14的延伸物，所以器件10的性能與器件300相同。器件300現有的製備工藝和製備條件可以整個作為製備器件10的一個工藝模組。
依據本發明，器件11也形成在基底14和外延層16中。器件11包括一個形成在外延層16中的高壓器件結構120。器件11包括輕摻雜的深N-型井134，形成在外延層16的頂面上，向下延伸到基底14的頂部。輕摻雜的深N-型井134可以通過高能注入形成。還可選擇，在深N-型井134的底部和周圍，製備一個n-型摻雜物的重摻雜掩埋層，也稱為深掩埋層136，深N-型井134在基底14和外延層16之間延伸，從而進一步提高器件的最大工作電壓。如下所述，製備深N-型井134和掩埋層136：首先，在基底14的頂面上注入一個深掩埋層，包括兩個不同的種類，一個重摻雜的第一n-型部分之掩埋層136，也稱為深掩埋重摻雜區，以及一個輕摻雜的第二n-型部分，也稱為深掩埋輕摻雜區（圖中未示），第二部分包圍著第一部分之掩埋層136；然後在基底14上方生長外延層16，在外延層16的頂部製備一個輕摻雜的深N-型井。我們希望，重摻雜的第一n-型部分之掩埋層136局限在基底14材料和p-外延層16之間的交界面附近的區域。然後進行擴散過程。在指定的溫度下，第二n-型摻雜物比第一n-型摻雜物部分擴散地更快。在本示例中，第一n-型摻雜物部分之掩埋層136中的摻雜物為銻或砷，第二n-型摻雜物部分中的摻雜物為磷。因此，第二n-型部分向上延伸，一部分P-型外延層16轉換成輕摻雜的N型，同時形成在外延層16頂部的輕摻雜的深N-型井從外延層16的表面開始向下，與第二n-型部分合併在一起，構成輕摻雜的深N-型井134。然後，在深N-型井134上方，形成多個N-型井122和P-型井126，在深N-型井134周圍的外延層16的頂部製備P-型井148。P-型井126和P-型井148的P-型摻雜物濃度大於外延層16和基底14中的濃度。P-型井148作為器件結構120的絕緣環。還可選擇，當絕緣環必須全部密封高壓器件結構120時，絕緣環還包括一個與P-型井148重疊很深的P掩埋區（圖中未示）。應明確，絕緣環用作使器件結構120與周圍器件絕緣，其中周圍器件中的一個作為形成在基底14和外延層16上的主動區(器件結構20)。
器件11需要考慮兩種擊穿電壓。其一是掩埋區134和/或掩埋區136到主動區(器件結構120)外部的基底14材料的擊穿電壓，可以通過N-型井134、掩埋層136和基底14的摻雜濃度以及N-型井134和掩埋層136的摻雜分佈來控制該擊穿電壓。其二是主動器件結構120內部的垂直擊穿電壓，可以通過掩埋層136區域和P-型井126區域之間的垂直距離51以及N-型井134區域、掩埋層136和P-型井126的摻雜濃度和分佈來控制該擊穿電壓。如果省去掩埋層136，那麼可以通過P-型井126區域的底部和N-型井134底部之間的垂直間距，以及N-型井134區域和P-型井126的摻雜濃度和分佈來控制主動器件結構120內部的垂直擊穿電壓。器件結構120的最大工作電壓受到第二垂直擊穿的限制。
為了在半導體晶片上製備器件10和11，提供p-型基底14，並且如第3圖-第5圖所示，在步驟200中，在基底14的頂面上，製備深掩埋區101。利用人們熟知的注入和掩膜工藝，注入摻雜物，獲得所需的摻雜濃度。為了製備不帶有深重摻雜掩埋層136的高壓器件，深掩埋區101僅含有n-型摻雜物（例如磷）。為了製備帶有深重摻雜掩埋層136的高壓器件，深掩埋區101含有兩種不同類型的n-型摻雜物，在指定溫度下具有不同比例的擴散係數。在本例中，第一n-型摻雜物為銻或砷，第二摻雜物為磷，它們通過兩步注入，都注入到基底14上的同一個深掩埋區101中。低壓器件區被光致抗蝕劑覆蓋，阻止在此步驟中的離子注入。
參見第3圖和第6圖，在步驟202中，外延層16生長在基底14上方，覆蓋所有的區域。我們希望，外延層16和基底14一樣，具有相同的p-型摻雜物和相同的摻雜濃度。在步驟204中，輕摻雜的深N-型井13和103形成在外延層16上方，如第7圖所示。接下來進行熱退火，在深掩埋區101中的摻雜物擴散到基底和第一外延層16中，如第6圖所示，構成區域108和109，如第8圖所示。確切地說，銻和磷之間的擴散係數之差，也就是說，磷擴散得比銻快，使得區域109包圍著區域108，如上所述。在步驟206中，參見第8A圖，p-型摻雜物分別注入到很深的N-型井34、134頂部中的子區P-型井26、126中，以及外延層16頂部中的子區P-型井48、148中，然後將n-型摻雜物分別注入到很深的N-型井34、134中的子區N-型井22、122中。然後，利用熱迴圈將摻雜劑充分驅動到外延層16中，足以提供所需的摻雜濃度和佈局。
就其本身而言，區域109中的輕摻雜磷向上延伸到P-型井126，並且將P-型外延層16的一部分轉變成輕摻雜N型，而形成在外延層16頂部的輕摻雜的深N-型井103從外延層16的表面開始向下，與區域109合併在一起，構成輕摻雜的深N-型井134。通過P-型井148形成絕緣環。還可選擇，如第8B圖所示，絕緣環也可以包括一個很深的P-型掩埋區146，當進行擴散步驟時，延伸並且與P-型井148合併在一起。
參見第2圖，掩埋層136區域（如果省去掩埋層136的話，就是N-型井134的底部）和P-型井126區域之間的垂直間距51是可控的。因此，器件結構120具有較高的垂直擊穿電壓，因此，工作電壓高於器件結構20的工作電壓。
參見第3圖和第8A圖，在步驟206中，通過離子注入到N-型井區22和P-型井區26，構成器件10的主動區，配置器件10的特殊器件結構，通過離子注入到N-型井區122和P-型井區126，配置器件11的特殊器件結構。應明確，儘管為了便於討論，只介紹了一個單獨的步驟，但是在步驟206中的n-型和p-型摻雜物注入發生在傳統的掩膜工藝、離子注入和高溫驅動的多個步驟中。如上所述，製備器件300的成熟的工藝和條件可以整體轉移到從步驟204開始進行。應明確，具有較低額定電壓的現有器件以及本發明具有較高額定電壓的新增的器件，都將在同一個基底材料上同時存在，而不會相互影響。
如第8A圖所示的工藝步驟，電壓較高的器件與電壓較低的器件集成在一個半導體晶片上。應明確，器件10或11可以是二極體、雙極電晶體、MOSFET或其他器件。還應明確，利用本發明所述工藝，任意器件組合都可以集成在一起，而不相互影響。第9圖表示器件11的實施例，作為一個高壓垂直NPN電晶體（VNPN）400，與現有電壓器件（圖中未示）集成在一起。除了器件400的主動區含有一個設置在高壓P-型井126中的重摻雜N+區130之外，其他都與器件11相同。重摻雜N+區130、P-型井126以及P-型井126下方的深掩埋N-型井134構成一個垂直NPN，重摻雜N+區130作為發射極、P-型井126作為基極，HVPW126下方的N區作為集電極。設置在HVPW P-型井126中的P+區128為基極提供接觸感測器，而設置在HVPW P-型井126外部的外延層16頂部的N-型井122為集電極提供接觸感測器。基極和集電極接觸感測器可以作為佈局中的環形。基極區P-型井126的底部和深掩埋重摻雜區(掩埋層136)（如果省去掩埋層136的話，就是N-型井134的底部）的頂部之間的間距51，控制NPN電晶體的垂直集成，從而限制高壓垂直NPN電晶體400的工作電壓。
第10圖表示器件11的一個實施例，作為一個高壓橫向PNP電晶體（LPNP）410，與現有的低壓器件（圖中未示）集成在一起。除了器件410的主動區配置成橫向PNP，包括P區127作為發射極，P環125作為集電極，包圍著中心發射極P區127，N環123作為基極接觸感測器（base contact pickup），包圍著集電極P環125和發射極P區127。基極區包括深N-型井134和深掩埋重摻雜區(掩埋層136)，圍在輕摻雜深N-型井134中。集電極P環125的底部和深掩埋重摻雜區(掩埋層136)的頂部（或者如果掩埋層136省去的話，就是N-型井134的底部）之間的間距51，控制PNP電晶體的垂直擊穿，從而限制高壓橫向PNP電晶體410的工作電壓。
第11圖表示器件11的一個可選實施例，作為一個高壓PN二極體420，與現有的低壓器件（圖中未示）集成在一起。除了高壓PN二極體420的主動區配置成一個PN二極體之外，包括P區162作為陽極，N區160作為含有一部分深N-型井134的陰極的接觸感測器（contact pickup for the cathode），其他都與器件11相同。陽極P區162的底部和深掩埋重摻雜區(掩埋層136)的頂部（或者如果掩埋層136省去的話，就是N-型井134的底部）之間的間距51，控制二極體的垂直擊穿，從而限制高壓PN二極體420的工作電壓。
第12圖表示器件11的一個可選實施例，作為一個高壓N-通道橫向DMOS（LDMOS），與現有的低壓器件（圖中未示）集成在一起。除了器件430的主動區配置成N-通道LDMOS，包括一個設置在P-型井156中的N+源極區157以及一個設置在N-型井154中的N+汲極接觸傳感區155之外，其他都與器件11相同。P-型井156作為本體，含有N-型井154和深N-型井134的N區作為汲極。場氧化物152形成在N-型井154上方，緊挨著汲極接觸傳感區155，絕緣柵極150設置在P-型井156和N-型井154上方，從重疊的一部分源極區157開始，延伸到重疊的一部分場氧化物152。P-型井156本體區的底部和深掩埋重摻雜區(掩埋層136)的頂部（或者如果掩埋層136省去的話，就是N-型井134的底部）之間的間距51，控制N-通道LDMOS的垂直擊穿，從而限制LDMOS 器件430的工作電壓。
如第13圖所示，除了P+源極區175設置在作為本體的N-型井174中，P+汲極接觸感測器177設置在作為汲極的P-型井176中之外，可以利用相同的方式製備P-通道LDMOS 器件440。P-型井176汲極區的底部和很深的掩埋重摻雜區(掩埋層136)的頂部（或者如果掩埋層136省去的話，就是N-型井134的底部）之間的間距51，控制P-通道LDMOS的垂直擊穿，從而限制LDMOS 器件440的工作電壓。
第14圖表示器件11的一個可選實施例，作為一個電壓很高的N-通道橫向DMOS（LDMOS），與現有的低壓器件（圖中未示）集成在一起。器件450中除去降低表面電場區（RESURF region）137在深N-型井134的頂部中作為很深的P-型井（Deep P-Well，簡稱DPW）之外，其他都與器件430相同。DPW區137在反向偏壓下耗盡，起到三重降低表面電場的功能，從而提高上述器件430的性能。利用高能注入機，從外延層16的頂面上離子注入，在製備P-型井156和N-型井154之前，形成表面電場區(DPW區)137。我們希望，浮動表面電場區137在P-型井156本體區附近。P-型井156本體區的底部和很深的掩埋重摻雜區(掩埋層136)的頂部（或者如果掩埋層136省去的話，就是N-型井134的底部）之間的間距51，控制N-通道LDMOS的垂直擊穿，從而限制LDMOS 器件450的工作電壓。
應明確，以上說明僅僅是本發明的一個示例，在不違背本發明意圖及範圍內的修正，都不應讓為是對本發明範圍的局限。因此，本發明的範圍應由所附的權利要求書及其全部範圍內的等效內容所限定。
10、11．．．器件
122、134．．．N-型井
126、148．．．P-型井
136．．．掩埋層
14．．．基底
16．．．外延層
20、120．．．器件結構
22、35．．．N-型井
26、48．．．P-型井
51．．．間距

Claims (19)

  1. 一種用於在半導體基底上製備高壓器件和低壓器件的方法，包括以下步驟：提供一個第一導電類型的半導體基底；在該基底的頂面上，生長一個第一導電類型的外延層，其中該外延層的摻雜濃度與該基底的摻雜濃度相同；在一低壓器件區和一高壓器件區中，分別製備一個第二導電類型的輕摻雜井，其中形成在該低壓器件區中的第二導電類型的輕摻雜井，其深度從該外延層的頂面開始到該外延層厚度的一半，形成在該高壓器件區中的第二導電類型的輕摻雜井，其深度從該外延層的頂面開始一直延伸到該半導體基底；在該高壓器件區域中的輕摻雜井的底部，製備與該第一導電類型相反的第二導電類型的深掩埋重摻雜區；以及從該輕摻雜井的頂面開始，製備複數個摻雜區，在該低壓器件區和該高壓器件區中，分別製備一低壓器件和一高壓器件。
  2. 如申請專利範圍第1項所述之用於在半導體基底上製備高壓器件和低壓器件的方法，更包括在該高壓器件區中的輕摻雜井的底部，製備與該第一導電類型相反的第二導電類型的深掩埋重摻雜區，還包括在該基底的頂面上生長一個第一導電類型的該外延層之前，在該高壓器件區中該半導體基底頂部，製備一個與該第一導電類型相反的第二導電類型的深掩埋重摻雜區。
  3. 如申請專利範圍第2項所述之用於在半導體基底上製備高壓器件和低壓器件的方法，其中製備該第二導電類型的深掩埋注入區更包括，注入第二導電類型的第一離子，以及第二導電類型的第二離子，該第一離子的擴散速度大於該第二離子的擴散速度。
  4. 如申請專利範圍第3項所述之用於在半導體基底上製備高壓器件和低壓器件的方法，其中製備該第二導電類型的深掩埋注入區更包括，一個或多個擴散手段用以擴散該第一離子，從而向上延伸，與形成在該外延層頂面上的輕摻雜深區合併在一起，構成一個很深的輕摻雜井。
  5. 如申請專利範圍第4項所述之用於在半導體基底上製備高壓器件和低壓器件的方法，其中更包括一個或多個熱擴散手段用以啟動並擴散該基底和該外延層之間交界面附近的周圍區域中的該第二離子，構成一個被深掩埋輕摻雜區包圍的深掩埋重摻雜區。
  6. 如申請專利範圍第5項所述之用於在半導體基底上製備高壓器件和低壓器件的方法，更包括在該低壓器件區和該高壓器件區中的輕摻雜井頂面上，形成多個摻雜區，以及在深掩埋重摻雜區上方，形成一個第一導電類型的摻雜井，距離深掩埋重摻雜區有一段底部距離，用於控制高壓器件的擊穿。
  7. 如申請專利範圍第1項所述之用於在半導體基底上製備高壓器件和低壓器件的方法，更包括在該高壓器件和該低壓器件的主動區(active area)周圍，製備絕緣區。
  8. 一種用於在半導體晶片上製備多個器件的方法，包括以下步驟：提供一個第一導電類型的基底；在一第一器件主動區中基底的頂部，注入與第一導電類型相反的第二導電類型的第一離子和第二離子，該第一離子擴散得比該第二離子更快；在該基底上方，生長一個第一導電類型的外延層；在第一器件和第二器件主動區中各製備一個第二導電類型的輕摻雜井，其深度從該外延層的頂面開始到該第一器件和該第二器件主動區中的該外延層厚度的一半；在第一主動區中進行一次或多次熱擴散手段用以使該第一離子擴散，向上延伸並且與形成在該外延層頂面上的輕摻雜井合併在一起，構成一個很深的輕摻雜井，使該第二離子擴散成一個被很深的該輕摻雜井包圍著的深掩埋重摻雜區；以及從包圍著深掩埋重摻雜區的很深的該輕摻雜井的頂面開始，製備一個第一導電類型的第一摻雜井。
  9. 如申請專利範圍第8項所述之用於在半導體晶片上製備多個器件的方法，更包括調節該第一導電類型的第一摻雜井的底部和第二導電類型的深掩埋重摻雜區之間的間距，以設置該第一器件的工作電壓。
  10. 如申請專利範圍第8項所述之用於在半導體晶片上製備多個器件的方法，更包括製備一個第一導電類型的掩埋摻雜區，設置在該第二導電類型的深掩埋重摻雜區上方，配置成一個降低表面電場層。
  11. 如申請專利範圍第8項所述之用於在半導體晶片上製備多個器件的方法，更包括製備絕緣區，包圍著該第一器件主動區，在該第二器件主動區中的輕摻雜井底部，製備第二導電類型的重摻雜掩埋注入區；以及在該第二器件主動區中的重摻雜掩埋注入區上方，輕摻雜井的頂面上，製備第一導電類型的第二摻雜井。
  12. 一種設置有第一器件和第二器件的半導體晶片，該半導體晶片包括：一個第一導電類型的基底；一個在該基底頂面上的第一導電類型的外延層，其中該外延層的摻雜濃度與該基底的摻雜濃度相同；一個第二導電類型的很深的輕摻雜井，形成於該外延層的頂面，延伸到該第一器件區域的基底的頂部；一個第二導電類型的輕摻雜井，形成於該外延層的頂面，深度為該第二器件區域的外延層厚度的一半；以及一個第一導電類型的第一摻雜井，形成在該第一器件區域中很深的輕摻雜井的頂部，以及一個第一導電類型的第二摻雜井，形成在該第二器件區域中的輕摻雜井的頂部，其中該第一器件的工作電壓高於該第二器件。
  13. 如申請專利範圍第12項所述之設置有第一器件和第二器件的半導體晶片，更包括一個與第一導電類型相反的第二導電類型的深掩埋重摻雜區，在基底和該外延層之間的交界面處，被第一器件區域中很深的輕摻雜井包圍著，其中第一導電類型的第一摻雜井的底部和第二導電類型很深的重摻雜植入區之間的距離，控制著該第一器件的工作電壓。
  14. 如申請專利範圍第12或13項所述之設置有第一器件和第二器件的半導體晶片，其中該第一器件是由一個NPN雙極電晶體構成的，該第一摻雜井配置成該NPN雙極電晶體的基極。
  15. 如申請專利範圍第12或13項所述之設置有第一器件和第二器件的半導體晶片，其中該第一器件是由一個PNP雙極電晶體構成的，該第一摻雜井作為該PNP雙極電晶體的集電極。
  16. 如申請專利範圍第12或13項所述之設置有第一器件和第二器件的半導體晶片，其中該第一器件是由一個PN二極體構成的，該第一摻雜井作為該PN二極體的陽極。
  17. 如申請專利範圍第12或13項所述之設置有第一器件和第二器件的半導體晶片，其中該第一器件是由一個N通道DMOS電晶體構成的，該第一摻雜井作為該DMOS電晶體的基極。
  18. 如申請專利範圍第17項所述之設置有第一器件和第二器件的半導體晶片，其中該N通道DMOS電晶體還包括一個第一導電類型的掩埋摻雜區，設置在該第二導電類型的深掩埋重摻雜區上方，作為一個降低表面電場層。
  19. 如申請專利範圍第12或13項所述之設置有第一器件和第二器件的半導體晶片，其中該第一器件是由一個P通道DMOS電晶體構成的，該第一摻雜井作為該DMOS電晶體的汲極。
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