JP2005340741A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
【解決手段】 パッケージ基板5と、パッケージ基板5の主面上に搭載され、かつ信号を増幅するLNAと前記LNAから供給された信号の周波数を変換するRFVCOとベースバンドから供給された信号の周波数を変換するIFVCOとを備えた半導体チップと、パッケージ基板5の裏面に設けられた複数のボール電極とを有し、パッケージ基板5において、前記LNAにGND電位を供給する第1の共通GND配線5cと、前記RFVCOにGND電位を供給する第2の共通GND配線5dと、前記IFVCOにGND電位を供給する第3の共通GND配線5eとが設けられており、第1の共通GND配線5cと第2の共通GND配線5dと第3の共通GND配線5eとがそれぞれ分離されている。
【選択図】 図4
Description
図1は本発明の実施の形態1の半導体装置の構造の一例を示す斜視図、図2は図1に示す半導体装置の裏面の端子配列の一例を示す斜視図、図3は図1に示す半導体装置に搭載される半導体チップの回路ブロックの構成の一例とボンディング電極との接続状態の一例を示す平面図、図4は図1に示す半導体装置に組み込まれる配線基板の表層の配線層における共通GNDパターンの一例を示す平面図、図5は図4に示す配線基板の裏面の配線層における配線パターンの一例を示す裏面図、図6は図1に示す半導体装置の外部端子の配列の一例を示す裏面図、図7は図1に示す半導体装置が搭載された無線通信装置における回路構成の一例を示す回路ブロック図、図8は図1に示す半導体装置が実装される実装基板の配線パターンの一例を示す配線図、図9は図8に示す本実施の形態1の実装基板に対する比較例の実装基板の配線パターンを示す配線図、図10は図1に示す半導体装置を簡略化して実装基板へ実装した際の実装構造の一例を示す断面図である。
図11は本発明の実施の形態2の半導体装置に組み込まれる配線基板の表層の配線層における配線パターンの一例を示す平面図、図12は図11に示す配線パターンを用いた変形例の半導体装置の実装構造を示す断面図とプレーン状導体部の平面図、図13は図12に示す変形例の半導体装置における外部端子の配列を示す裏面図、図14は図12に示す変形例の半導体装置の電流リーク無しの状態の一例を示す回路図である。
1a 主面
1b 裏面
1c パッド(表面電極)
1d,1e,1f,1g LNA(第1の回路部)
1h RFフィルタ
1i MIXer
1j RFVCO(第2の回路部)
1k RFSynthsiser
1m PGA
1n ベースバンド
1p MIXer
1q TXVCO(第3の回路部)
1r PA
1s LPF
1t DC/VCXO
1u ControlLogic
1v IFSynthsiser
1w IFVCO
2 アンテナ
3 実装基板
3a 第1の基板側共通配線(第1の基板側共通導体部)
3b 第2の基板側共通配線(第2の基板側共通導体部)
3c 内部配線
3d スルーホール配線
3e 端子
4 高周波パワーモジュール(半導体装置)
5 パッケージ基板(配線基板)
5a 主面
5b 裏面
5c 第1の共通GND配線(第1の共通導体部)
5d 第2の共通GND配線(第2の共通導体部)
5e 第3の共通GND配線(第3の共通導体部)
5f 配線部
5g スルーホール配線
5h バンプランド
5i ボンディング電極
5j 裏面側配線部
5k 第4の共通GND配線(他の共通導体部)
5m プレーン状GND配線(プレーン状導体部)
6 ワイヤ
7 封止体
8 ボール電極(外部端子)
8a LNA用GNDボール電極
8b VCO用GNDボール電極
8c 共通GND用ボール電極
9 電源
10 ダイボンディング材
Claims (13)
- 主面とその反対側の裏面とを有した配線基板と、
前記配線基板の主面上に搭載されており、前記配線基板と電気的に接続され、さらに入力された信号を増幅する第1の回路部および前記第1の回路部から供給された信号の周波数を変換する第2の回路部を備えた半導体チップと、
前記配線基板の裏面に設けられた複数の外部端子とを有し、
前記配線基板において、前記第1の回路部と電気的に接続して前記第1の回路部にGND電位を供給する第1の共通導体部と、前記第2の回路部と電気的に接続して前記第2の回路部にGND電位を供給する第2の共通導体部とが設けられており、前記第1の共通導体部と前記第2の共通導体部とが分離されていることを特徴とする半導体装置。 - 主面とその反対側の裏面とを有した配線基板と、
前記配線基板の主面上に搭載されており、前記配線基板と電気的に接続され、さらに入力された信号を増幅する第1の回路部と、前記第1の回路部から供給された信号の周波数を変換する第2の回路部と、供給された信号の周波数を変換する第3の回路部とを備えた半導体チップと、
前記配線基板の裏面に設けられた複数の外部端子とを有し、
前記配線基板において、前記第1の回路部と電気的に接続して前記第1の回路部にGND電位を供給する第1の共通導体部と、前記第2の回路部と電気的に接続して前記第2の回路部にGND電位を供給する第2の共通導体部と、前記第3の回路部と電気的に接続して前記第3の回路部にGND電位を供給する第3の共通導体部とが設けられており、前記第1の共通導体部と前記第2の共通導体部と前記第3の共通導体部とがそれぞれ分離されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、前記半導体装置が実装される実装基板は、前記第1の回路部に電気的に接続する第1の基板側共通導体部と、前記第2の回路部に電気的に接続する第2の基板側共通導体部とを有しており、前記実装基板において、前記第1の基板側共通導体部と前記第2の基板側共通導体部とが、少なくとも前記半導体装置の下部に対応した領域の表層配線で分離されていることを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記半導体チップ内で、前記第1の回路部として、それぞれ異なった周波数の信号が入力される複数の低雑音増幅器が設けられており、前記配線基板の主面において、それぞれの前記低雑音増幅器に対応して設けられた複数の配線部のうち、隣接する配線部間それぞれに前記第1の共通導体部が配置されていることを特徴とする半導体装置。
- 請求項4記載の半導体装置において、前記それぞれの低雑音増幅器に対応して前記配線基板に設けられた複数の配線部それぞれが前記第1の共通導体部によって囲まれていることを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記外部端子の数は、前記配線基板の前記半導体チップの表面電極と電気的に接続されるボンディング電極の数より少ないことを特徴とする半導体装置。
- 請求項6記載の半導体装置において、前記半導体チップの前記表面電極の数は、前記配線基板の前記ボンディング電極の数より多いことを特徴とする半導体装置。
- 主面とその反対側の裏面とを有した配線基板と、
前記配線基板の主面上に搭載されており、前記配線基板と電気的に接続され、さらに入力された信号を増幅する第1の回路部および前記第1の回路部と分離された複数の他の回路部を備えた半導体チップと、
前記配線基板の裏面に設けられた複数の外部端子とを有し、
前記配線基板において、前記第1の回路部と電気的に接続して前記第1の回路部にGND電位を供給する第1の共通導体部と、前記複数の他の回路部と電気的に接続して前記複数の他の回路部それぞれにGND電位を供給する他の共通導体部とが分離して設けられており、前記他の共通導体部は、前記配線基板の主面に設けられたプレーン状導体部に接続されていることを特徴とする半導体装置。 - 請求項8記載の半導体装置において、前記プレーン状導体部と電気的に接続された複数の前記外部端子が、前記配線基板の裏面の前記プレーン状導体部に対応した箇所に設けられていることを特徴とする半導体装置。
- 請求項8記載の半導体装置において、前記半導体チップ内で、前記第1の回路部として、それぞれ異なった周波数の信号が入力される複数の低雑音増幅器が設けられており、前記配線基板の主面において、それぞれの前記低雑音増幅器に対応して設けられた複数の配線部のうち、隣接する配線部間それぞれに前記第1の共通導体部が配置されていることを特徴とする半導体装置。
- 第1の回路部と第2の回路部を有する半導体チップと、
基板上の複数のボンディング電極と接続する第1の共通導体部と、基板上の他の複数のボンディング電極と接続する第2の共通導体部とを有する配線基板と、
前記配線基板の裏面に設けられた複数の外部端子とを有し、
前記半導体チップの前記第1の回路部のGND用の表面電極と前記第1の共通導体部とが前記配線基板上で接続され、かつ前記半導体チップの前記第2の回路部のGND用の表面電極と前記第2の共通導体部とが前記配線基板上で接続されており、さらに前記第1および第2の共通導体部それぞれが、前記配線基板の裏面の外部端子に接続されていることを特徴とする半導体装置。 - 請求項11記載の半導体装置において、前記外部端子の数は、前記配線基板の前記ボンディング電極の数より少ないことを特徴とする半導体装置。
- 請求項12記載の半導体装置において、前記半導体チップにおける前記ボンディング電極と接続する表面電極の数は、前記ボンディング電極の数より多いことを特徴とする半導体装置。
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CN2005100734631A CN1705123B (zh) | 2004-05-31 | 2005-05-30 | 一种半导体器件 |
CN2010101354363A CN101789421B (zh) | 2004-05-31 | 2005-05-30 | 一种半导体器件 |
US12/559,941 US7982301B2 (en) | 2004-05-31 | 2009-09-15 | Semiconductor device |
US13/020,494 US8115295B2 (en) | 2004-05-31 | 2011-02-03 | Semiconductor device |
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US20100001393A1 (en) | 2010-01-07 |
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US7982301B2 (en) | 2011-07-19 |
US20050263881A1 (en) | 2005-12-01 |
US8471379B2 (en) | 2013-06-25 |
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US7608922B2 (en) | 2009-10-27 |
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