JP2005162893A5 - - Google Patents
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- Publication number
- JP2005162893A5 JP2005162893A5 JP2003404439A JP2003404439A JP2005162893A5 JP 2005162893 A5 JP2005162893 A5 JP 2005162893A5 JP 2003404439 A JP2003404439 A JP 2003404439A JP 2003404439 A JP2003404439 A JP 2003404439A JP 2005162893 A5 JP2005162893 A5 JP 2005162893A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etching solution
- metal film
- resist
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 description 56
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- 230000000740 bleeding effect Effects 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 8
- 229910017604 nitric acid Inorganic materials 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- -1 alkyl sulfate ester Chemical class 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- 150000008051 alkyl sulfates Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IRGKJPHTQIWQTD-UHFFFAOYSA-N 2,7-dibromopyrene-1,3,6,8-tetrone Chemical compound O=C1C(Br)C(=O)C2=CC=C3C(=O)C(Br)C(=O)C4=CC=C1C2=C43 IRGKJPHTQIWQTD-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004027 organic amino compounds Chemical class 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003404439A JP4428995B2 (ja) | 2003-12-03 | 2003-12-03 | 金属膜のエッチング液組成物 |
| TW093136040A TWI374949B (en) | 2003-12-03 | 2004-11-23 | Etching solution composition for metal films |
| KR1020040098312A KR101127564B1 (ko) | 2003-12-03 | 2004-11-27 | 금속막의 에칭액 조성물 |
| SG200407134A SG112086A1 (en) | 2003-12-03 | 2004-12-01 | Etching solution composition for metal films |
| US11/001,737 US20050136672A1 (en) | 2003-12-03 | 2004-12-02 | Etching solution composition for metal films |
| CNB2004100983108A CN100572602C (zh) | 2003-12-03 | 2004-12-03 | 金属膜的蚀刻液组合物 |
| US12/352,020 US8557711B2 (en) | 2003-12-03 | 2009-01-12 | Etching solution composition for metal films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003404439A JP4428995B2 (ja) | 2003-12-03 | 2003-12-03 | 金属膜のエッチング液組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005162893A JP2005162893A (ja) | 2005-06-23 |
| JP2005162893A5 true JP2005162893A5 (enExample) | 2007-01-25 |
| JP4428995B2 JP4428995B2 (ja) | 2010-03-10 |
Family
ID=34674849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003404439A Expired - Lifetime JP4428995B2 (ja) | 2003-12-03 | 2003-12-03 | 金属膜のエッチング液組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20050136672A1 (enExample) |
| JP (1) | JP4428995B2 (enExample) |
| KR (1) | KR101127564B1 (enExample) |
| CN (1) | CN100572602C (enExample) |
| SG (1) | SG112086A1 (enExample) |
| TW (1) | TWI374949B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4428995B2 (ja) * | 2003-12-03 | 2010-03-10 | 関東化学株式会社 | 金属膜のエッチング液組成物 |
| KR100688533B1 (ko) * | 2005-02-15 | 2007-03-02 | 삼성전자주식회사 | 공정산포,전압 및 온도에 덜민감한 저항-커패시터 발진회로 |
| US20080116170A1 (en) * | 2006-11-17 | 2008-05-22 | Sian Collins | Selective metal wet etch composition and process |
| JP5363713B2 (ja) | 2007-07-19 | 2013-12-11 | 三洋半導体製造株式会社 | エッチング液組成物 |
| US7790624B2 (en) * | 2008-07-16 | 2010-09-07 | Global Foundries Inc. | Methods for removing a metal-comprising material from a semiconductor substrate |
| JP2010163661A (ja) * | 2009-01-16 | 2010-07-29 | Sanyo Handotai Seizo Kk | エッチング液組成物 |
| CN101792907A (zh) * | 2010-04-01 | 2010-08-04 | 江阴市江化微电子材料有限公司 | 一种铝钼蚀刻液 |
| KR102091541B1 (ko) * | 2014-02-25 | 2020-03-20 | 동우 화인켐 주식회사 | 유기 발광 표시 장치의 제조 방법 |
| CN104118871B (zh) * | 2014-07-31 | 2017-02-15 | 无锡格菲电子薄膜科技有限公司 | 一种石墨烯生长衬底的复合刻蚀液及其刻蚀方法 |
| KR102456079B1 (ko) * | 2014-12-24 | 2022-11-21 | 삼성디스플레이 주식회사 | 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법 |
| CN107587135A (zh) * | 2016-07-08 | 2018-01-16 | 深圳新宙邦科技股份有限公司 | 一种钼铝钼蚀刻液 |
| JP6751326B2 (ja) * | 2016-09-16 | 2020-09-02 | キオクシア株式会社 | 基板処理装置および半導体装置の製造方法 |
| CN107286939A (zh) * | 2017-06-19 | 2017-10-24 | 江阴润玛电子材料股份有限公司 | 一种半导体芯片用镍银腐蚀液 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5832200B2 (ja) * | 1982-03-15 | 1983-07-11 | 株式会社 ネオス | 含フツ素界面活性剤およびその製法 |
| JPS6156284A (ja) | 1984-08-28 | 1986-03-20 | Asahi Glass Co Ltd | 金属のエツチング用組成物 |
| SU1308647A1 (ru) | 1985-07-10 | 1987-05-07 | Предприятие П/Я А-1785 | Состав защитной добавки " нтарь" дл эмульсионного травлени |
| JPH01301869A (ja) | 1988-05-27 | 1989-12-06 | Dai Ichi Kogyo Seiyaku Co Ltd | ニッチング促進添加剤 |
| JP2894717B2 (ja) | 1989-03-15 | 1999-05-24 | 日産化学工業株式会社 | 低表面張力硫酸組成物 |
| US4895617A (en) * | 1989-05-04 | 1990-01-23 | Olin Corporation | Etchant solution for photoresist-patterned metal layers |
| JP2994119B2 (ja) * | 1991-11-13 | 1999-12-27 | サンスター株式会社 | 起泡性洗浄剤 |
| JPH0641770A (ja) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | シリコンウエハ表面の処理方法 |
| JPH06122982A (ja) | 1992-10-13 | 1994-05-06 | Matsushita Electric Ind Co Ltd | アルミニウムを主成分とする金属薄膜のエッチング液組成物 |
| JP3355233B2 (ja) * | 1993-08-31 | 2002-12-09 | 株式会社ネオス | 含フッ素陰イオン界面活性剤 |
| JPH07176525A (ja) | 1993-12-21 | 1995-07-14 | Casio Comput Co Ltd | 低抵抗配線の形成方法 |
| US6309560B1 (en) * | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6630433B2 (en) * | 1999-07-19 | 2003-10-07 | Honeywell International Inc. | Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride |
| JP2001077098A (ja) | 1999-09-03 | 2001-03-23 | Toshiba Corp | エッチング液、及びこれを用いる薄膜パターンの製造方法 |
| JP2001284308A (ja) * | 2000-01-24 | 2001-10-12 | Mitsubishi Chemicals Corp | 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法 |
| US6136514A (en) * | 2000-01-31 | 2000-10-24 | Advanced Micro Devices, Inc. | Resist developer saving system using material to reduce surface tension and wet resist surface |
| CA2415544A1 (en) | 2000-07-11 | 2002-01-17 | Corixa Corporation | Compositions and methods for the therapy and diagnosis of lung cancer |
| US6525009B2 (en) * | 2000-12-07 | 2003-02-25 | International Business Machines Corporation | Polycarboxylates-based aqueous compositions for cleaning of screening apparatus |
| JP2003049285A (ja) | 2001-08-08 | 2003-02-21 | Mitsubishi Chemicals Corp | エッチング方法およびエッチング液の定量分析方法ならびにエッチング液からリン酸を回収する方法 |
| WO2003005115A1 (en) * | 2001-07-06 | 2003-01-16 | Samsung Electronics Co., Ltd. | An etchant for a wire, a method for manufacturing the wire and a method for manufacturing a thin film transistor array panel including the method |
| US6692546B2 (en) * | 2001-08-14 | 2004-02-17 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| JP2003127397A (ja) | 2001-10-26 | 2003-05-08 | Canon Inc | 回路基板の製造方法 |
| JPWO2003038883A1 (ja) * | 2001-10-31 | 2005-02-24 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| ITMI20020178A1 (it) | 2002-02-01 | 2003-08-01 | Ausimont Spa | Uso di additivi fluorurati nell'etching o polishing di circuiti integrati |
| JP2004156070A (ja) * | 2002-11-01 | 2004-06-03 | Kanto Chem Co Inc | 透明導電膜を含む積層膜のエッチング液組成物 |
| JP4478383B2 (ja) * | 2002-11-26 | 2010-06-09 | 関東化学株式会社 | 銀を主成分とする金属薄膜のエッチング液組成物 |
| JP3870292B2 (ja) * | 2002-12-10 | 2007-01-17 | 関東化学株式会社 | エッチング液組成物とそれを用いた反射板の製造方法 |
| JP4428995B2 (ja) | 2003-12-03 | 2010-03-10 | 関東化学株式会社 | 金属膜のエッチング液組成物 |
-
2003
- 2003-12-03 JP JP2003404439A patent/JP4428995B2/ja not_active Expired - Lifetime
-
2004
- 2004-11-23 TW TW093136040A patent/TWI374949B/zh not_active IP Right Cessation
- 2004-11-27 KR KR1020040098312A patent/KR101127564B1/ko not_active Expired - Fee Related
- 2004-12-01 SG SG200407134A patent/SG112086A1/en unknown
- 2004-12-02 US US11/001,737 patent/US20050136672A1/en not_active Abandoned
- 2004-12-03 CN CNB2004100983108A patent/CN100572602C/zh not_active Expired - Fee Related
-
2009
- 2009-01-12 US US12/352,020 patent/US8557711B2/en not_active Expired - Fee Related
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