CN100572602C - 金属膜的蚀刻液组合物 - Google Patents
金属膜的蚀刻液组合物 Download PDFInfo
- Publication number
- CN100572602C CN100572602C CNB2004100983108A CN200410098310A CN100572602C CN 100572602 C CN100572602 C CN 100572602C CN B2004100983108 A CNB2004100983108 A CN B2004100983108A CN 200410098310 A CN200410098310 A CN 200410098310A CN 100572602 C CN100572602 C CN 100572602C
- Authority
- CN
- China
- Prior art keywords
- etching
- etchant
- acid
- nitric acid
- aluminium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012528 membrane Substances 0.000 title claims description 21
- 238000005530 etching Methods 0.000 claims abstract description 65
- 150000003839 salts Chemical class 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000004094 surface-active agent Substances 0.000 claims abstract description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 48
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 32
- 229910017604 nitric acid Inorganic materials 0.000 claims description 32
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 28
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 239000004411 aluminium Substances 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 229910001868 water Inorganic materials 0.000 claims description 17
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 14
- 229910000838 Al alloy Inorganic materials 0.000 claims description 13
- 239000013543 active substance Substances 0.000 claims description 11
- 150000002148 esters Chemical class 0.000 claims description 11
- 125000003342 alkenyl group Chemical group 0.000 claims description 9
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 8
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 8
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- 229960004418 trolamine Drugs 0.000 claims description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 4
- -1 phenyl ether sulfonic acids Chemical class 0.000 abstract description 4
- 150000008051 alkyl sulfates Chemical class 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 30
- 210000004379 membrane Anatomy 0.000 description 19
- 239000011259 mixed solution Substances 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008595 infiltration Effects 0.000 description 4
- 238000001764 infiltration Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- IRGKJPHTQIWQTD-UHFFFAOYSA-N 2,7-dibromopyrene-1,3,6,8-tetrone Chemical compound O=C1C(Br)C(=O)C2=CC=C3C(=O)C(Br)C(=O)C4=CC=C1C2=C43 IRGKJPHTQIWQTD-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 125000004103 aminoalkyl group Chemical group 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 210000000721 basilar membrane Anatomy 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004027 organic amino compounds Chemical class 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003404439A JP4428995B2 (ja) | 2003-12-03 | 2003-12-03 | 金属膜のエッチング液組成物 |
| JP404439/2003 | 2003-12-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1651608A CN1651608A (zh) | 2005-08-10 |
| CN100572602C true CN100572602C (zh) | 2009-12-23 |
Family
ID=34674849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100983108A Expired - Fee Related CN100572602C (zh) | 2003-12-03 | 2004-12-03 | 金属膜的蚀刻液组合物 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20050136672A1 (enExample) |
| JP (1) | JP4428995B2 (enExample) |
| KR (1) | KR101127564B1 (enExample) |
| CN (1) | CN100572602C (enExample) |
| SG (1) | SG112086A1 (enExample) |
| TW (1) | TWI374949B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4428995B2 (ja) * | 2003-12-03 | 2010-03-10 | 関東化学株式会社 | 金属膜のエッチング液組成物 |
| KR100688533B1 (ko) * | 2005-02-15 | 2007-03-02 | 삼성전자주식회사 | 공정산포,전압 및 온도에 덜민감한 저항-커패시터 발진회로 |
| US20080116170A1 (en) * | 2006-11-17 | 2008-05-22 | Sian Collins | Selective metal wet etch composition and process |
| JP5363713B2 (ja) | 2007-07-19 | 2013-12-11 | 三洋半導体製造株式会社 | エッチング液組成物 |
| US7790624B2 (en) * | 2008-07-16 | 2010-09-07 | Global Foundries Inc. | Methods for removing a metal-comprising material from a semiconductor substrate |
| JP2010163661A (ja) * | 2009-01-16 | 2010-07-29 | Sanyo Handotai Seizo Kk | エッチング液組成物 |
| CN101792907A (zh) * | 2010-04-01 | 2010-08-04 | 江阴市江化微电子材料有限公司 | 一种铝钼蚀刻液 |
| KR102091541B1 (ko) * | 2014-02-25 | 2020-03-20 | 동우 화인켐 주식회사 | 유기 발광 표시 장치의 제조 방법 |
| CN104118871B (zh) * | 2014-07-31 | 2017-02-15 | 无锡格菲电子薄膜科技有限公司 | 一种石墨烯生长衬底的复合刻蚀液及其刻蚀方法 |
| KR102456079B1 (ko) * | 2014-12-24 | 2022-11-21 | 삼성디스플레이 주식회사 | 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법 |
| CN107587135A (zh) * | 2016-07-08 | 2018-01-16 | 深圳新宙邦科技股份有限公司 | 一种钼铝钼蚀刻液 |
| JP6751326B2 (ja) * | 2016-09-16 | 2020-09-02 | キオクシア株式会社 | 基板処理装置および半導体装置の製造方法 |
| CN107286939A (zh) * | 2017-06-19 | 2017-10-24 | 江阴润玛电子材料股份有限公司 | 一种半导体芯片用镍银腐蚀液 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5832200B2 (ja) * | 1982-03-15 | 1983-07-11 | 株式会社 ネオス | 含フツ素界面活性剤およびその製法 |
| JPS6156284A (ja) | 1984-08-28 | 1986-03-20 | Asahi Glass Co Ltd | 金属のエツチング用組成物 |
| SU1308647A1 (ru) | 1985-07-10 | 1987-05-07 | Предприятие П/Я А-1785 | Состав защитной добавки " нтарь" дл эмульсионного травлени |
| JPH01301869A (ja) | 1988-05-27 | 1989-12-06 | Dai Ichi Kogyo Seiyaku Co Ltd | ニッチング促進添加剤 |
| JP2894717B2 (ja) | 1989-03-15 | 1999-05-24 | 日産化学工業株式会社 | 低表面張力硫酸組成物 |
| US4895617A (en) * | 1989-05-04 | 1990-01-23 | Olin Corporation | Etchant solution for photoresist-patterned metal layers |
| JP2994119B2 (ja) * | 1991-11-13 | 1999-12-27 | サンスター株式会社 | 起泡性洗浄剤 |
| JPH0641770A (ja) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | シリコンウエハ表面の処理方法 |
| JPH06122982A (ja) | 1992-10-13 | 1994-05-06 | Matsushita Electric Ind Co Ltd | アルミニウムを主成分とする金属薄膜のエッチング液組成物 |
| JP3355233B2 (ja) * | 1993-08-31 | 2002-12-09 | 株式会社ネオス | 含フッ素陰イオン界面活性剤 |
| JPH07176525A (ja) | 1993-12-21 | 1995-07-14 | Casio Comput Co Ltd | 低抵抗配線の形成方法 |
| US6309560B1 (en) * | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6630433B2 (en) * | 1999-07-19 | 2003-10-07 | Honeywell International Inc. | Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride |
| JP2001077098A (ja) | 1999-09-03 | 2001-03-23 | Toshiba Corp | エッチング液、及びこれを用いる薄膜パターンの製造方法 |
| JP2001284308A (ja) * | 2000-01-24 | 2001-10-12 | Mitsubishi Chemicals Corp | 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法 |
| US6136514A (en) * | 2000-01-31 | 2000-10-24 | Advanced Micro Devices, Inc. | Resist developer saving system using material to reduce surface tension and wet resist surface |
| CA2415544A1 (en) | 2000-07-11 | 2002-01-17 | Corixa Corporation | Compositions and methods for the therapy and diagnosis of lung cancer |
| US6525009B2 (en) * | 2000-12-07 | 2003-02-25 | International Business Machines Corporation | Polycarboxylates-based aqueous compositions for cleaning of screening apparatus |
| JP2003049285A (ja) | 2001-08-08 | 2003-02-21 | Mitsubishi Chemicals Corp | エッチング方法およびエッチング液の定量分析方法ならびにエッチング液からリン酸を回収する方法 |
| WO2003005115A1 (en) * | 2001-07-06 | 2003-01-16 | Samsung Electronics Co., Ltd. | An etchant for a wire, a method for manufacturing the wire and a method for manufacturing a thin film transistor array panel including the method |
| US6692546B2 (en) * | 2001-08-14 | 2004-02-17 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| JP2003127397A (ja) | 2001-10-26 | 2003-05-08 | Canon Inc | 回路基板の製造方法 |
| JPWO2003038883A1 (ja) * | 2001-10-31 | 2005-02-24 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| ITMI20020178A1 (it) | 2002-02-01 | 2003-08-01 | Ausimont Spa | Uso di additivi fluorurati nell'etching o polishing di circuiti integrati |
| JP2004156070A (ja) * | 2002-11-01 | 2004-06-03 | Kanto Chem Co Inc | 透明導電膜を含む積層膜のエッチング液組成物 |
| JP4478383B2 (ja) * | 2002-11-26 | 2010-06-09 | 関東化学株式会社 | 銀を主成分とする金属薄膜のエッチング液組成物 |
| JP3870292B2 (ja) * | 2002-12-10 | 2007-01-17 | 関東化学株式会社 | エッチング液組成物とそれを用いた反射板の製造方法 |
| JP4428995B2 (ja) | 2003-12-03 | 2010-03-10 | 関東化学株式会社 | 金属膜のエッチング液組成物 |
-
2003
- 2003-12-03 JP JP2003404439A patent/JP4428995B2/ja not_active Expired - Lifetime
-
2004
- 2004-11-23 TW TW093136040A patent/TWI374949B/zh not_active IP Right Cessation
- 2004-11-27 KR KR1020040098312A patent/KR101127564B1/ko not_active Expired - Fee Related
- 2004-12-01 SG SG200407134A patent/SG112086A1/en unknown
- 2004-12-02 US US11/001,737 patent/US20050136672A1/en not_active Abandoned
- 2004-12-03 CN CNB2004100983108A patent/CN100572602C/zh not_active Expired - Fee Related
-
2009
- 2009-01-12 US US12/352,020 patent/US8557711B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200519228A (en) | 2005-06-16 |
| US20050136672A1 (en) | 2005-06-23 |
| JP2005162893A (ja) | 2005-06-23 |
| KR101127564B1 (ko) | 2012-03-26 |
| SG112086A1 (en) | 2005-06-29 |
| JP4428995B2 (ja) | 2010-03-10 |
| CN1651608A (zh) | 2005-08-10 |
| KR20050053493A (ko) | 2005-06-08 |
| US8557711B2 (en) | 2013-10-15 |
| TWI374949B (en) | 2012-10-21 |
| US20090124091A1 (en) | 2009-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SANYO ELECTRIC CO., LTD. NIIGATA SANYO ELECTRONICS Free format text: FORMER OWNER: SANYO ELECTRIC CO., LTD. SANYO SEMICONDUCTOR MANUFACTURING CO., LTD. |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Address after: Tokyo, Japan Co-patentee after: Sanyo Electric Co.,Ltd. Patentee after: Kanto Kagaku Kabushiki Kaisha Co-patentee after: Sanyo Semiconductor Manufacturing Co.,Ltd. Address before: Tokyo, Japan Co-patentee before: Sanyo Electric Co.,Ltd. Patentee before: Kanto Kagaku Kabushiki Kaisha Co-patentee before: Xinxie Sanyo Electronics Co.,Ltd. |
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Effective date of registration: 20110118 Address after: Tokyo, Japan Co-patentee after: Sanyo Electric Co.,Ltd. Patentee after: Kanto Kagaku Kabushiki Kaisha Co-patentee after: Xinxie Sanyo Electronics Co.,Ltd. Address before: Tokyo, Japan Co-patentee before: Sanyo Electric Co.,Ltd. Patentee before: Kanto Kagaku Kabushiki Kaisha Co-patentee before: Sanyo Semiconductor Manufacturing Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091223 Termination date: 20151203 |
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| EXPY | Termination of patent right or utility model |