US20050136672A1 - Etching solution composition for metal films - Google Patents
Etching solution composition for metal films Download PDFInfo
- Publication number
- US20050136672A1 US20050136672A1 US11/001,737 US173704A US2005136672A1 US 20050136672 A1 US20050136672 A1 US 20050136672A1 US 173704 A US173704 A US 173704A US 2005136672 A1 US2005136672 A1 US 2005136672A1
- Authority
- US
- United States
- Prior art keywords
- etching
- etching solution
- solution composition
- acid
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005530 etching Methods 0.000 title claims abstract description 110
- 239000000203 mixture Substances 0.000 title claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 34
- 239000002184 metal Substances 0.000 title claims abstract description 34
- 150000003839 salts Chemical class 0.000 claims abstract description 16
- 239000004094 surface-active agent Substances 0.000 claims abstract description 14
- 150000008051 alkyl sulfates Chemical class 0.000 claims abstract description 13
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 9
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims abstract description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 45
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 29
- 229910017604 nitric acid Inorganic materials 0.000 claims description 29
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 229910001868 water Inorganic materials 0.000 claims description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims description 13
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 13
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- 239000007788 liquid Substances 0.000 description 11
- 230000003746 surface roughness Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- DEJFCQKCJXVXGI-UHFFFAOYSA-N O.CC(O)=O.O[N+]([O-])=O.OP(O)(O)=O Chemical compound O.CC(O)=O.O[N+]([O-])=O.OP(O)(O)=O DEJFCQKCJXVXGI-UHFFFAOYSA-N 0.000 description 2
- -1 Triethanolamine alkyl sulfate Chemical class 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- QBEGYEWDTSUVHH-UHFFFAOYSA-P diazanium;cerium(3+);pentanitrate Chemical compound [NH4+].[NH4+].[Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O QBEGYEWDTSUVHH-UHFFFAOYSA-P 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002169 ethanolamines Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004027 organic amino compounds Chemical class 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Definitions
- the present invention relates to an etching solution composition for metal films for use in the manufacturing processes of liquid crystal display devices and semiconductor devices.
- phosphoric acid based etching solutions are frequently used since they are stable and inexpensive, have little effect on an insulation film in the lower layer, and excel in the controllability of etching.
- aluminum or an aluminum alloy for example, is being used as the wiring material; typical multi-layer wiring is fabricated by forming an insulation layer on aluminum or aluminum alloy wiring by any suitable means, followed by further forming aluminum or aluminum alloy wiring in the upper layer thereon.
- the aluminum or aluminum alloy wiring in the lower layer needs to have a cross section of a tapered shape to improve the covering property of the insulation layer lying thereon.
- the control of the tapered shape of the wiring in the lower layer (the control of side etching) is important, and failing to obtain a tapered shape with a desired angle may lead to breaks of the wiring in the upper layer.
- a technique in which, in order to obtain a desired definite taper angle, for example, in the range of 30 to 50 degrees, the shape of the wiring is formed by a dry etching, thereafter a resist pattern is further formed to remove the resist in the end portion of the wiring, which is to be formed into a tapered shape, and the area adjacent thereto where there is no wiring, and thereafter aluminum film is etched using an etching solution consisting of phosphoric acid, nitric acid, acetic acid, and water (an optimal nitric acid composition is 11.36% to 12.78% by mass)(see, for example, patent document 4 listed below).
- this method which requires both of a dry etching process used for forming the wiring and a wet etching process used for forming the tapered shape of the end face of wiring, is cumbersome.
- etching solution exudation trace due to the exudation of the etching solution (hereinbelow referred to as “etching solution exudation trace”) will occur further inside the etching surface at the interface between the resist and a metal film.
- etching solution exudation trace the metal film surface will lose its smoothness by being etched, which will cause a problem since a desired shape can not be obtained.
- etching solution exudation trace there is no prior art disclosed on the method of preventing the “etching solution exudation trace”, and no technique has been developed for etching free from causing etching solution exudation trace when the nitric acid concentration is high.
- an etching solution which is principally composed of phosphoric acid, nitric acid, acetic acid, and water and further added with a trialkylamine oxide surfactant for the purpose of preventing the adsorption of hydrogen which is produced when the metal film is etched by nitric acid onto the metal film surface, since the adsorption of bubbles onto the metal film surface will inhibit etching thereby impairing the smoothness of the etching surface (see, for example, patent document 5 listed below).
- etching solution composition which contains at least one of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid, which are specific surfactants, and the salts thereof and have eventually completed the invention after conducting further studies.
- the present invention relates to an etching solution composition for etching a metal film, comprising one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid, and the salts thereof.
- the present invention further relates to the above described etching solution composition, wherein the salt of alkyl sulfate is the salt of alkyl sulfate and triethanolamine or monoethanolamine.
- the present invention further relates to the above described etching solution composition, wherein the concentration of the surfactant is 0.001% to 10% by mass.
- the present invention further relates to the above described etching solution composition, comprising phosphoric acid, nitric acid, acetic acid, and water.
- the present invention further relates to the above described etching solution composition, wherein the metal film is of aluminum or an aluminum alloy.
- the etching solution composition for etching metal films according to the present invention can suppress the etching rate of the metal film, particularly of aluminum or aluminum alloy by being added with a specific surfactant consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid and the salts thereof thereby making it possible to make the shape of the metal film after etching to be a desired definite tapered shape.
- the etching solution composition according to the present invention has a high concentration of nitric acid, it will not cause etching solution exudation trace.
- the etching surface of the metal film formed after etching is a smooth surface free from surface roughness.
- the surfactants used in the present invention adsorb to the metal film and the resist surfaces serving to protect the metal and the resist surfaces thereby enabling the control of the etching rate so that the shape of the metal film becomes a desired definite tapered shape with a small taper angle after etching, and the etching surface becomes smooth without causing etching solution exudation trace.
- the etching solution composition of the present invention has a high concentration of nitric acid, the number of cracks observed on the resist surface after etching is fewer compared with the case of conventional etching solutions and, thus, the resist degradation is suppressed.
- etching solution composition of the present invention containing such surfactants does not fall under the TSCA (Toxic Substances Control Act) and therefore offers a high level of safety.
- the etching solution composition of the present invention contains one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid and the salts thereof.
- salts with organic amino compounds are preferable in the viewpoint of the contamination of the semiconductor substrate.
- the salts of alkyl sulfate are preferably the triethanolamine or monoethanolamine salt of alkyl sulfate.
- the etching solution composition of the present invention which is to be used for the etching of metal films, is particularly suitable for aluminum or aluminum alloys.
- the alkyl group of alkyl sulfate and salts thereof used for the etching solution composition of the present invention may be a straight-chain or branched-chain alkyl group in which the number of carbon atoms is preferably 8 to 18, and more preferably 12 to 14.
- the alkenyl group of perflluoroalkenyl phenyl ether sulfonic acid and the salt thereof may be a straight-chain or branched-chain alkenyl group in which the number of carbon atoms is preferably 3 to 12, and more preferably 6.
- the concentration of the surfactant is preferably 0.001% to 10% by mass, and more preferably 0.01% to 2% by mass with respect to the entire etching solution composition.
- the principal components of the etching solution composition of the present invention are, when used for aluminum or aluminum alloy films, preferably phosphoric acid, nitric acid, acetic acid, and water.
- the concentration of each component may be determined within a range in which the etching rate of the aluminum or aluminum alloy film is at a sufficient level.
- the concentration of phosphoric acid is preferably 30.0% to 60.0% by mass, and more preferably 45.0% to 60.0% by mass; the concentration of nitric acid is preferably 10.0% to 40.0% by mass, and more preferably 15.0% to 30.0% by mass; and the concentration of acetic acid is preferably 1.0% to 20.0% by mass, and more preferably 2.0% to 15.0% by mass.
- phosphoric acid, nitric acid, acetic acid and water at a concentration within the above described ranges makes it possible to achieve a practical etching rate of not lower than 150 nm/min and therefore is preferable.
- Table 1 shows the examples of the present invention along with the comparison examples.
- a substrate in which a liner film and an aluminum film was formed on an Si substrate, was immersed for processing in the etching solution for a time period 1.2 times longer than the exact etching time calculated from the etching rate, and was washed with water and dried. Thereafter, the resist was stripped off and the taper angle of the tapered shape formed was measured by conducting electron microscopy observation.
- a substrate in which a liner film and an aluminum film was formed on an Si substrate, was immersed for processing in the etching solution for a time period 1.2 times longer than the exact etching time calculated from the etching rate, and was washed with water and dried. Thereafter, the resist was stripped off and the surface roughness and etching solution exudation trace of the etching surface of the aluminum film were evaluated by conducting electron microscopy observation.
- Each etching solution was used as a solution of 100% by mass by adding water to the phosphoric acid, nitric acid, acetic acid, and the surfactant shown in the Table.
- the etching solution composition of the present invention will make it possible to form the sectional shape of the metal film after etching into a desired definite tapered shape with a small angle in a well controlled manner, to prevent the surface roughness generated on the etching surface, and to prevent etching solution exudation trace.
- etching solution composition for a metal film makes it possible to etch a metal film into a desired definite tapered shape in a controllable manner, to make the etching surface to be a smooth surface without surface roughness, and to prevent the occurrence of etching solution exudation trace.
- it is possible to cope with the trend of densification and miniaturization of patterns in a field such as multi-layer wiring in which low resistance metal materials are required.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/352,020 US8557711B2 (en) | 2003-12-03 | 2009-01-12 | Etching solution composition for metal films |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003404439A JP4428995B2 (ja) | 2003-12-03 | 2003-12-03 | 金属膜のエッチング液組成物 |
| JP2003-404439 | 2003-12-03 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/352,020 Division US8557711B2 (en) | 2003-12-03 | 2009-01-12 | Etching solution composition for metal films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20050136672A1 true US20050136672A1 (en) | 2005-06-23 |
Family
ID=34674849
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/001,737 Abandoned US20050136672A1 (en) | 2003-12-03 | 2004-12-02 | Etching solution composition for metal films |
| US12/352,020 Expired - Fee Related US8557711B2 (en) | 2003-12-03 | 2009-01-12 | Etching solution composition for metal films |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/352,020 Expired - Fee Related US8557711B2 (en) | 2003-12-03 | 2009-01-12 | Etching solution composition for metal films |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20050136672A1 (enExample) |
| JP (1) | JP4428995B2 (enExample) |
| KR (1) | KR101127564B1 (enExample) |
| CN (1) | CN100572602C (enExample) |
| SG (1) | SG112086A1 (enExample) |
| TW (1) | TWI374949B (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060181359A1 (en) * | 2005-02-15 | 2006-08-17 | Samsung Electronics Co., Ltd. | Resistor-capacitor (RC) oscillator insensitive to process, voltage, and temperature variances |
| US20080116170A1 (en) * | 2006-11-17 | 2008-05-22 | Sian Collins | Selective metal wet etch composition and process |
| US20090124091A1 (en) * | 2003-12-03 | 2009-05-14 | Kanto Kagaku Kabushiki Kaisha | Etching solution composition for metal films |
| US20100015804A1 (en) * | 2008-07-16 | 2010-01-21 | Advanced Micro Devices, Inc. | Methods for removing a metal-comprising material from a semiconductor substrate |
| CN104118871A (zh) * | 2014-07-31 | 2014-10-29 | 无锡格菲电子薄膜科技有限公司 | 一种石墨烯生长衬底的复合刻蚀液及其刻蚀方法 |
| US10403524B2 (en) * | 2016-09-16 | 2019-09-03 | Toshiba Memory Corporation | Substrate processing device and method of manufacturing semiconductor device |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5363713B2 (ja) | 2007-07-19 | 2013-12-11 | 三洋半導体製造株式会社 | エッチング液組成物 |
| JP2010163661A (ja) * | 2009-01-16 | 2010-07-29 | Sanyo Handotai Seizo Kk | エッチング液組成物 |
| CN101792907A (zh) * | 2010-04-01 | 2010-08-04 | 江阴市江化微电子材料有限公司 | 一种铝钼蚀刻液 |
| KR102091541B1 (ko) * | 2014-02-25 | 2020-03-20 | 동우 화인켐 주식회사 | 유기 발광 표시 장치의 제조 방법 |
| KR102456079B1 (ko) * | 2014-12-24 | 2022-11-21 | 삼성디스플레이 주식회사 | 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법 |
| CN107587135A (zh) * | 2016-07-08 | 2018-01-16 | 深圳新宙邦科技股份有限公司 | 一种钼铝钼蚀刻液 |
| CN107286939A (zh) * | 2017-06-19 | 2017-10-24 | 江阴润玛电子材料股份有限公司 | 一种半导体芯片用镍银腐蚀液 |
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| JPWO2003038883A1 (ja) * | 2001-10-31 | 2005-02-24 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| ITMI20020178A1 (it) | 2002-02-01 | 2003-08-01 | Ausimont Spa | Uso di additivi fluorurati nell'etching o polishing di circuiti integrati |
| JP2004156070A (ja) * | 2002-11-01 | 2004-06-03 | Kanto Chem Co Inc | 透明導電膜を含む積層膜のエッチング液組成物 |
| JP4478383B2 (ja) * | 2002-11-26 | 2010-06-09 | 関東化学株式会社 | 銀を主成分とする金属薄膜のエッチング液組成物 |
| JP3870292B2 (ja) * | 2002-12-10 | 2007-01-17 | 関東化学株式会社 | エッチング液組成物とそれを用いた反射板の製造方法 |
| JP4428995B2 (ja) | 2003-12-03 | 2010-03-10 | 関東化学株式会社 | 金属膜のエッチング液組成物 |
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2003
- 2003-12-03 JP JP2003404439A patent/JP4428995B2/ja not_active Expired - Lifetime
-
2004
- 2004-11-23 TW TW093136040A patent/TWI374949B/zh not_active IP Right Cessation
- 2004-11-27 KR KR1020040098312A patent/KR101127564B1/ko not_active Expired - Fee Related
- 2004-12-01 SG SG200407134A patent/SG112086A1/en unknown
- 2004-12-02 US US11/001,737 patent/US20050136672A1/en not_active Abandoned
- 2004-12-03 CN CNB2004100983108A patent/CN100572602C/zh not_active Expired - Fee Related
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2009
- 2009-01-12 US US12/352,020 patent/US8557711B2/en not_active Expired - Fee Related
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090124091A1 (en) * | 2003-12-03 | 2009-05-14 | Kanto Kagaku Kabushiki Kaisha | Etching solution composition for metal films |
| US8557711B2 (en) | 2003-12-03 | 2013-10-15 | Kanto Kagaku Kabushiki Kaisha | Etching solution composition for metal films |
| US20060181359A1 (en) * | 2005-02-15 | 2006-08-17 | Samsung Electronics Co., Ltd. | Resistor-capacitor (RC) oscillator insensitive to process, voltage, and temperature variances |
| US20080116170A1 (en) * | 2006-11-17 | 2008-05-22 | Sian Collins | Selective metal wet etch composition and process |
| US20100015804A1 (en) * | 2008-07-16 | 2010-01-21 | Advanced Micro Devices, Inc. | Methods for removing a metal-comprising material from a semiconductor substrate |
| US7790624B2 (en) | 2008-07-16 | 2010-09-07 | Global Foundries Inc. | Methods for removing a metal-comprising material from a semiconductor substrate |
| CN104118871A (zh) * | 2014-07-31 | 2014-10-29 | 无锡格菲电子薄膜科技有限公司 | 一种石墨烯生长衬底的复合刻蚀液及其刻蚀方法 |
| US10403524B2 (en) * | 2016-09-16 | 2019-09-03 | Toshiba Memory Corporation | Substrate processing device and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200519228A (en) | 2005-06-16 |
| JP2005162893A (ja) | 2005-06-23 |
| KR101127564B1 (ko) | 2012-03-26 |
| CN100572602C (zh) | 2009-12-23 |
| SG112086A1 (en) | 2005-06-29 |
| JP4428995B2 (ja) | 2010-03-10 |
| CN1651608A (zh) | 2005-08-10 |
| KR20050053493A (ko) | 2005-06-08 |
| US8557711B2 (en) | 2013-10-15 |
| TWI374949B (en) | 2012-10-21 |
| US20090124091A1 (en) | 2009-05-14 |
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