ITMI20020178A1 - Uso di additivi fluorurati nell'etching o polishing di circuiti integrati - Google Patents

Uso di additivi fluorurati nell'etching o polishing di circuiti integrati

Info

Publication number
ITMI20020178A1
ITMI20020178A1 IT2002MI000178A ITMI20020178A ITMI20020178A1 IT MI20020178 A1 ITMI20020178 A1 IT MI20020178A1 IT 2002MI000178 A IT2002MI000178 A IT 2002MI000178A IT MI20020178 A ITMI20020178 A IT MI20020178A IT MI20020178 A1 ITMI20020178 A1 IT MI20020178A1
Authority
IT
Italy
Prior art keywords
polishing
etching
integrated circuits
fluorinated additives
fluorinated
Prior art date
Application number
IT2002MI000178A
Other languages
English (en)
Inventor
Alba Chittofrati
Mario Visca
Aprile Fiorenza D
Original Assignee
Ausimont Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ausimont Spa filed Critical Ausimont Spa
Priority to IT2002MI000178A priority Critical patent/ITMI20020178A1/it
Publication of ITMI20020178A0 publication Critical patent/ITMI20020178A0/it
Priority to JP2003015150A priority patent/JP2003234316A/ja
Priority to EP03001823A priority patent/EP1333477A3/en
Priority to US10/355,072 priority patent/US7306747B2/en
Publication of ITMI20020178A1 publication Critical patent/ITMI20020178A1/it
Priority to US11/655,873 priority patent/US20070135655A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/004Surface-active compounds containing F
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
IT2002MI000178A 2002-02-01 2002-02-01 Uso di additivi fluorurati nell'etching o polishing di circuiti integrati ITMI20020178A1 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT2002MI000178A ITMI20020178A1 (it) 2002-02-01 2002-02-01 Uso di additivi fluorurati nell'etching o polishing di circuiti integrati
JP2003015150A JP2003234316A (ja) 2002-02-01 2003-01-23 集積回路のエッチングまたはポリッシングにおけるフッ素化添加剤の使用
EP03001823A EP1333477A3 (en) 2002-02-01 2003-01-29 Use of fluorinated additives in the etching or polishing of integrated circuits
US10/355,072 US7306747B2 (en) 2002-02-01 2003-01-31 Use of fluorinated additives in the etching or polishing of integrated circuits
US11/655,873 US20070135655A1 (en) 2002-02-01 2007-01-22 Use of fluorinated additives in the etching or polishing of integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2002MI000178A ITMI20020178A1 (it) 2002-02-01 2002-02-01 Uso di additivi fluorurati nell'etching o polishing di circuiti integrati

Publications (2)

Publication Number Publication Date
ITMI20020178A0 ITMI20020178A0 (it) 2002-02-01
ITMI20020178A1 true ITMI20020178A1 (it) 2003-08-01

Family

ID=11449059

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2002MI000178A ITMI20020178A1 (it) 2002-02-01 2002-02-01 Uso di additivi fluorurati nell'etching o polishing di circuiti integrati

Country Status (4)

Country Link
US (2) US7306747B2 (it)
EP (1) EP1333477A3 (it)
JP (1) JP2003234316A (it)
IT (1) ITMI20020178A1 (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6858124B2 (en) 2002-12-16 2005-02-22 3M Innovative Properties Company Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
US7147767B2 (en) 2002-12-16 2006-12-12 3M Innovative Properties Company Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
JP4428995B2 (ja) 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物
US7977426B2 (en) * 2008-11-13 2011-07-12 E. I. Du Pont De Nemours And Company Fluoroalkyl ether sulfonate surfactants

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3810874A (en) * 1969-03-10 1974-05-14 Minnesota Mining & Mfg Polymers prepared from poly(perfluoro-alkylene oxide) compounds
US3917538A (en) * 1973-01-17 1975-11-04 Ferrofluidics Corp Ferrofluid compositions and process of making same
JPS6039176A (ja) * 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4517106A (en) * 1984-04-26 1985-05-14 Allied Corporation Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions
JPH0353083A (ja) * 1989-07-20 1991-03-07 Morita Kagaku Kogyo Kk 半導体素子の金属汚染を防止する方法
DE69418458T2 (de) * 1993-02-04 2000-01-27 Daikin Ind Ltd Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften
IT1271422B (it) * 1993-10-15 1997-05-28 Ausimont Spa Procedimento per la preparazione di copolimeri del tetrafluoroetilene con altri monomeri perfluorurati
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
JP3188843B2 (ja) * 1996-08-28 2001-07-16 ステラケミファ株式会社 微細加工表面処理剤及び微細加工表面処理方法
US5998521A (en) * 1996-11-04 1999-12-07 3M Innovative Properties Company Aqueous fluoropolymer compositions and method of preparing the same
US6174817B1 (en) * 1998-08-26 2001-01-16 Texas Instruments Incorporated Two step oxide removal for memory cells
US6268608B1 (en) * 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
US6294469B1 (en) * 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
DE10003567A1 (de) * 2000-01-27 2001-08-09 Henkel Kgaa Tensidkombination
US6184134B1 (en) * 2000-02-18 2001-02-06 Infineon Technologies North America Corp. Dry process for cleaning residues/polymers after metal etch
IT1318594B1 (it) * 2000-06-23 2003-08-27 Ausimont Spa Processo di polimerizzazione di monomeri solfonici.

Also Published As

Publication number Publication date
US7306747B2 (en) 2007-12-11
US20070135655A1 (en) 2007-06-14
EP1333477A3 (en) 2007-01-03
ITMI20020178A0 (it) 2002-02-01
US20030146404A1 (en) 2003-08-07
EP1333477A2 (en) 2003-08-06
JP2003234316A (ja) 2003-08-22

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