DE69418458T2 - Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften - Google Patents
Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaftenInfo
- Publication number
- DE69418458T2 DE69418458T2 DE69418458T DE69418458T DE69418458T2 DE 69418458 T2 DE69418458 T2 DE 69418458T2 DE 69418458 T DE69418458 T DE 69418458T DE 69418458 T DE69418458 T DE 69418458T DE 69418458 T2 DE69418458 T2 DE 69418458T2
- Authority
- DE
- Germany
- Prior art keywords
- wetness
- semiconductors
- connection
- excellent humidification
- properties
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4199993 | 1993-02-04 | ||
PCT/JP1994/000147 WO1994018696A1 (en) | 1993-02-04 | 1994-02-02 | Wet-etching composition for semiconductors excellent in wettability |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69418458D1 DE69418458D1 (de) | 1999-06-17 |
DE69418458T2 true DE69418458T2 (de) | 2000-01-27 |
Family
ID=12623911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69418458T Expired - Fee Related DE69418458T2 (de) | 1993-02-04 | 1994-02-02 | Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften |
Country Status (7)
Country | Link |
---|---|
US (1) | US5755989A (de) |
EP (1) | EP0691676B1 (de) |
JP (1) | JP3309392B2 (de) |
KR (1) | KR0170794B1 (de) |
DE (1) | DE69418458T2 (de) |
TW (1) | TW403777B (de) |
WO (1) | WO1994018696A1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3188843B2 (ja) * | 1996-08-28 | 2001-07-16 | ステラケミファ株式会社 | 微細加工表面処理剤及び微細加工表面処理方法 |
JP3408090B2 (ja) * | 1996-12-18 | 2003-05-19 | ステラケミファ株式会社 | エッチング剤 |
DE19805525C2 (de) * | 1998-02-11 | 2002-06-13 | Sez Semiconduct Equip Zubehoer | Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen |
US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
US6310018B1 (en) * | 2000-03-31 | 2001-10-30 | 3M Innovative Properties Company | Fluorinated solvent compositions containing hydrogen fluoride |
EP1187225B1 (de) * | 2000-09-08 | 2006-11-15 | Kanto Kagaku Kabushiki Kaisha | Ätzflüssigkeitszusammensetzung |
ITMI20020178A1 (it) * | 2002-02-01 | 2003-08-01 | Ausimont Spa | Uso di additivi fluorurati nell'etching o polishing di circuiti integrati |
US7169323B2 (en) * | 2002-11-08 | 2007-01-30 | 3M Innovative Properties Company | Fluorinated surfactants for buffered acid etch solutions |
US6890452B2 (en) * | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
JP4799843B2 (ja) * | 2003-10-17 | 2011-10-26 | 三星電子株式会社 | 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法 |
JP4776191B2 (ja) * | 2004-08-25 | 2011-09-21 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法 |
WO2007024556A2 (en) | 2005-08-19 | 2007-03-01 | Houghton Metal Finishing Company | Methods and compositions for acid treatment of a metal surface |
TWI591158B (zh) * | 2008-03-07 | 2017-07-11 | 恩特葛瑞斯股份有限公司 | 非選擇性氧化物蝕刻濕清潔組合物及使用方法 |
US8314011B2 (en) * | 2008-05-30 | 2012-11-20 | Alta Devices, Inc. | Epitaxial lift off stack having a non-uniform handle and methods thereof |
KR101507592B1 (ko) * | 2008-09-12 | 2015-04-06 | 주식회사 동진쎄미켐 | 유기발광다이오드표시장치의 식각액 조성물 |
CN102301456A (zh) * | 2008-12-17 | 2011-12-28 | 奥塔装置公司 | 基于带的外延剥离设备和方法 |
CN112608754B (zh) * | 2020-12-03 | 2021-12-28 | 湖北兴福电子材料有限公司 | 一种高选择性的蚀刻液 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1942544C3 (de) * | 1969-08-21 | 1978-03-30 | Gerhard Collardin Gmbh, 5000 Koeln | Verfahren zum Beizen von Magnesium und Magnesiumlegierungen ' |
JPS6039176A (ja) * | 1983-08-10 | 1985-02-28 | Daikin Ind Ltd | エッチング剤組成物 |
US4620934A (en) * | 1984-04-26 | 1986-11-04 | Allied Corporation | Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4 |
US4517106A (en) * | 1984-04-26 | 1985-05-14 | Allied Corporation | Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions |
JPS63283028A (ja) * | 1986-09-29 | 1988-11-18 | Hashimoto Kasei Kogyo Kk | 微細加工表面処理剤 |
JP2852355B2 (ja) * | 1989-06-26 | 1999-02-03 | ステラケミファ株式会社 | 微細加工表面処理剤 |
JPH0353083A (ja) * | 1989-07-20 | 1991-03-07 | Morita Kagaku Kogyo Kk | 半導体素子の金属汚染を防止する方法 |
-
1994
- 1994-02-02 DE DE69418458T patent/DE69418458T2/de not_active Expired - Fee Related
- 1994-02-02 US US08/495,598 patent/US5755989A/en not_active Expired - Fee Related
- 1994-02-02 KR KR1019950703139A patent/KR0170794B1/ko not_active IP Right Cessation
- 1994-02-02 WO PCT/JP1994/000147 patent/WO1994018696A1/ja active IP Right Grant
- 1994-02-02 EP EP94905829A patent/EP0691676B1/de not_active Expired - Lifetime
- 1994-02-02 JP JP51787294A patent/JP3309392B2/ja not_active Expired - Fee Related
- 1994-02-08 TW TW083101053A patent/TW403777B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3309392B2 (ja) | 2002-07-29 |
TW403777B (en) | 2000-09-01 |
WO1994018696A1 (en) | 1994-08-18 |
KR0170794B1 (ko) | 1999-03-30 |
DE69418458D1 (de) | 1999-06-17 |
US5755989A (en) | 1998-05-26 |
KR960700523A (ko) | 1996-01-20 |
EP0691676B1 (de) | 1999-05-12 |
EP0691676A4 (de) | 1997-05-28 |
EP0691676A1 (de) | 1996-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |